IRFIBE20G, SiHFIBE20G
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) |
800 |
|
RDS(on) (Ω) |
VGS = 10 V |
6.5 |
Qg (Max.) (nC) |
38 |
|
Qgs (nC) |
5.0 |
|
Qgd (nC) |
21 |
|
Configuration |
Single |
|
TO-220 FULLPAK |
|
D |
|
|
|
|
G |
|
|
|
S |
G D S |
N-Channel MOSFET |
FEATURES
•Isolated Package
•High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz)
•Sink to Lead Creepage Distance = 4.8 mm
•Dynamic dV/dt Rating
•Low Thermal Resistance
•Lead (Pb)-free Available
DESCRIPTION
Available
RoHS*
COMPLIANT
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single screw fixing.
ORDERING INFORMATION
Package |
TO-220 FULLPAK |
|
Lead (Pb)-free |
IRFIBE20GPbF |
|
SiHFIBE20G-E3 |
||
|
||
SnPb |
IRFIBE20G |
|
|
||
SiHFIBE20G |
||
|
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER |
|
|
SYMBOL |
LIMIT |
UNIT |
|
|
|
|
|
|
|
|
Drain-Source Voltage |
|
|
VDS |
800 |
V |
|
Gate-Source Voltage |
|
|
VGS |
± 20 |
||
|
|
|
||||
Continuous Drain Current |
|
VGS at 10 V |
TC = 25 °C |
ID |
1.4 |
|
|
TC = 100 °C |
0.86 |
A |
|||
|
|
|
|
|||
Pulsed Drain Currenta |
|
|
IDM |
5.6 |
|
|
Linear Derating Factor |
|
|
|
0.24 |
W/°C |
|
|
|
|
|
|
|
|
Single Pulse Avalanche Energyb |
|
|
EAS |
180 |
mJ |
|
Repetitive Avalanche Currenta |
|
|
IAR |
1.4 |
A |
|
Repetitive Avalanche Energya |
|
|
EAR |
3.0 |
mJ |
|
Maximum Power Dissipation |
|
TC = 25 °C |
PD |
30 |
W |
|
Peak Diode Recovery dV/dtc |
|
|
dV/dt |
2.0 |
V/ns |
|
Operating Junction and Storage Temperature Range |
|
|
TJ, Tstg |
- 55 to + 150 |
°C |
|
Soldering Recommendations (Peak Temperature) |
|
for 10 s |
|
300d |
||
|
|
|
||||
Mounting Torque |
|
6-32 or M3 screw |
|
10 |
lbf · in |
|
|
|
|
|
|||
|
|
1.1 |
N · m |
|||
|
|
|
|
|
||
|
|
|
|
|
|
|
Notes
a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b.VDD = 50 V, starting TJ = 25 °C, L = 172 mH, RG = 25 Ω, IAS = 1.4 A (see fig. 12).
c.ISD ≤ 1.8 A, dI/dt ≤ 80 A/µs, VDD ≤ 600, TJ ≤ 150 °C.
d.1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91183 |
www.vishay.com |
S-81275-Rev. A, 16-Jun-08 |
1 |
IRFIBE20G, SiHFIBE20G
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER |
SYMBOL |
TYP. |
MAX. |
UNIT |
|
|
|
|
|
|
|
Maximum Junction-to-Ambient |
RthJA |
- |
65 |
°C/W |
|
Maximum Junction-to-Case (Drain) |
RthJC |
- |
4.1 |
||
|
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER |
|
SYMBOL |
|
|
|
|
|
TEST CONDITIONS |
|
MIN. |
TYP. |
MAX. |
UNIT |
||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Static |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Drain-Source Breakdown Voltage |
|
VDS |
|
|
|
|
VGS = 0 V, ID = 250 µA |
800 |
- |
- |
V |
||||||
VDS Temperature Coefficient |
|
VDS/TJ |
|
|
|
Reference to 25 °C, ID = 1 mA |
- |
0.98 |
- |
V/°C |
|||||||
Gate-Source Threshold Voltage |
|
VGS(th) |
|
|
|
|
VDS = VGS, ID = 250 µA |
2.0 |
- |
4.0 |
V |
||||||
Gate-Source Leakage |
|
IGSS |
|
|
|
|
|
|
VGS = ± 20 V |
|
|
- |
- |
± 100 |
nA |
||
Zero Gate Voltage Drain Current |
|
IDSS |
|
|
|
|
VDS = 800 V, VGS = 0 V |
- |
- |
100 |
µA |
||||||
|
|
VDS = 640 V, VGS = 0 V, TJ = 125 °C |
- |
- |
500 |
||||||||||||
|
|
|
|
|
|
||||||||||||
Drain-Source On-State Resistance |
|
RDS(on) |
VGS = 10 V |
|
ID = 0.84 Ab |
- |
- |
6.5 |
Ω |
||||||||
Forward Transconductance |
|
g |
fs |
|
|
|
|
V |
DS |
= 10 V, I = 0.84 Ab |
1.0 |
- |
- |
S |
|||
|
|
|
|
|
|
|
|
|
D |
|
|
|
|
|
|
||
Dynamic |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Input Capacitance |
|
Ciss |
|
|
|
|
|
|
|
VGS = 0 V, |
|
|
- |
530 |
- |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Output Capacitance |
|
Coss |
|
|
|
|
|
|
|
VDS = 25 V, |
|
|
- |
150 |
- |
pF |
|
|
|
|
|
|
|
|
|
f = 1.0 MHz, see fig. 5 |
|
|
|
||||||
Reverse Transfer Capacitance |
|
Crss |
|
|
|
|
- |
90 |
- |
||||||||
|
|
|
|
|
|
|
|
|
|
|
|
||||||
Drain to Sink Capacitance |
|
C |
|
|
|
|
|
|
|
f = 1.0 MHz |
|
|
- |
12 |
- |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Total Gate Charge |
|
Qg |
|
|
|
|
|
|
|
ID = 1.8 A, VDS = 400 V, |
- |
- |
38 |
|
|||
Gate-Source Charge |
|
Qgs |
VGS = 10 V |
|
- |
- |
5.0 |
nC |
|||||||||
|
|
see fig. 6 and 13b |
|||||||||||||||
Gate-Drain Charge |
|
Qgd |
|
|
|
|
|
|
|
|
|
|
- |
- |
21 |
|
|
Turn-On Delay Time |
|
td(on) |
|
|
|
|
|
|
|
|
|
|
- |
8.2 |
- |
|
|
Rise Time |
|
tr |
|
|
|
|
VDD = 400 V, ID = 1.8 A, |
- |
17 |
- |
|
||||||
|
|
|
|
|
|
|
|
RG = 18 Ω, RD= 230 Ω, |
|
|
|
ns |
|||||
Turn-Off Delay Time |
|
td(off) |
|
|
|
|
- |
58 |
- |
||||||||
|
|
|
|
|
|
|
|
see fig. 10b |
|
|
|
||||||
Fall Time |
|
tf |
|
|
|
|
|
|
|
|
|
|
- |
27 |
- |
|
|
Internal Drain Inductance |
|
LD |
Between lead, |
|
D |
- |
4.5 |
- |
|
||||||||
|
6 mm (0.25") from |
|
|
|
|||||||||||||
|
|
|
|
|
|
|
|
|
nH |
||||||||
|
|
|
|
package and center of |
G |
|
|
|
|
||||||||
|
|
|
|
|
|
|
|
||||||||||
Internal Source Inductance |
|
LS |
die contact |
|
|
|
|
- |
7.5 |
- |
|
||||||
|
|
|
|
|
|
|
|
|
|
S |
|
||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Drain-Source Body Diode Characteristics |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Continuous Source-Drain Diode Current |
|
IS |
MOSFET symbol |
|
D |
- |
- |
1.4 |
|
||||||||
|
|
|
|
showing the |
|
|
|
|
|
|
|
||||||
|
|
|
|
|
|
|
|
|
|
|
A |
||||||
Pulsed Diode Forward Currenta |
|
ISM |
integral reverse |
G |
|
- |
- |
5.6 |
|||||||||
|
|
|
|||||||||||||||
|
p - n junction diode |
|
S |
|
|||||||||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|||
Body Diode Voltage |
|
V |
|
|
|
T |
J |
= 25 °C, I = 1.4 A, V |
GS |
= 0 Vb |
- |
- |
1.4 |
V |
|||
|
|
SD |
|
|
|
|
|
|
S |
|
|
|
|
|
|||
Body Diode Reverse Recovery Time |
|
trr |
T |
|
= 25 °C, I = 1.8 A, dI/dt = 100 A/µsb |
- |
380 |
570 |
ns |
||||||||
|
|
|
|
J |
|
|
|
|
|||||||||
|
|
|
|
|
|
|
|
||||||||||
Body Diode Reverse Recovery Charge |
|
Qrr |
|
|
|
|
|
F |
|
|
- |
0.94 |
1.4 |
µC |
|||
|
|
|
|
|
|
|
|
|
|
|
|||||||
Forward Turn-On Time |
|
ton |
|
|
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) |
Notes
a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b.Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
www.vishay.com |
Document Number: 91183 |
2 |
S-81275-Rev. A, 16-Jun-08 |
IRFIBE20G, SiHFIBE20G
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Fig. 1 - Typical Output Characteristics, TC = 25 °C |
|
Fig. 3 - Typical Transfer Characteristics |
|
|
|
|
|
|
|||
|
|
|
|
|
|
|
|
|
|
|
|
Fig. 2 - Typical Output Characteristics, TC = 150 °C |
Fig. 4 - Normalized On-Resistance vs. Temperature |
Document Number: 91183 |
www.vishay.com |
S-81275-Rev. A, 16-Jun-08 |
3 |