Vishay IRFIBE20G, SiHFIBE20G Data Sheet
Power MOSFET
IRFIBE20G, SiHFIBE20G
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) 800
R
(Ω)V
DS(on)
Q
(Max.) (nC) 38
g
Q
(nC) 5.0
gs
Q
(nC) 21
gd
Configuration Single
TO-220 FULLPAK
= 10 V 6.5
GS
D
FEATURES
• Isolated Package
• High Voltage Isolation = 2.5 kV
f = 60 Hz)
• Sink to Lead Creepage Distance = 4.8 mm
• Dynamic dV/dt Rating
• Low Thermal Resistance
• Lead (Pb)-free Available
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
G
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220 FULLPAK eliminates the need for additional
insulating hardware in commercial-industrial applications.
S
D
G
N-Channel MOSFET
S
The molding compound used provides a high isolation
capability and a low thermal resistance between the tab and
external heatsink. This isolation is equivalent to using a 100
micron mica barrier with standard TO-220 product. The
FULLPAK is mounted to a heatsink using a single clip or by
a single screw fixing.
ORDERING INFORMATION
Package TO-220 FULLPAK
Lead (Pb)-free
SnPb
IRFIBE20GPbF
SiHFIBE20G-E3
IRFIBE20G
SiHFIBE20G
(t = 60 s;
RMS
Available
RoHS*
COMPLIANT
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate-Source Voltage V
T
= 25 °C
Continuous Drain Current V
Pulsed Drain Current
a
at 10 V
GS
C
= 100 °C 0.86
T
C
DS
± 20
GS
I
D
IDM 5.6
Linear Derating Factor 0.24 W/°C
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation T
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range T
b
a
a
= 25 °C P
c
C
E
AS
I
AR
E
AR
D
dV/dt 2.0 V/ns
, T
J
stg
Soldering Recommendations (Peak Temperature) for 10 s 300
Mounting Torque 6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
= 50 V, starting TJ = 25 °C, L = 172 mH, RG = 25 Ω, IAS = 1.4 A (see fig. 12).
DD
c. I
≤ 1.8 A, dI/dt ≤ 80 A/µs, VDD ≤ 600, TJ ≤ 150 °C.
SD
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91183 www.vishay.com
S-81275-Rev. A, 16-Jun-08 1
800
1.4
180 mJ
1.4 A
3.0 mJ
30 W
- 55 to + 150
d
10 lbf · in
1.1 N · m
V
A
°C
IRFIBE20G, SiHFIBE20G
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient R
Maximum Junction-to-Case (Drain) R
thJA
thJC
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
Temperature Coefficient ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.98 - V/°C
V
DS
Gate-Source Threshold Voltage V
Gate-Source Leakage I
Zero Gate Voltage Drain Current I
Drain-Source On-State Resistance R
Forward Transconductance g
Dynamic
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Drain to Sink Capacitance C f = 1.0 MHz - 12 -
Total Gate Charge Q
Gate-Drain Charge Q
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Internal Drain Inductance L
Internal Source Inductance L
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
Pulsed Diode Forward Current
a
Body Diode Voltage V
Body Diode Reverse Recovery Time t
Body Diode Reverse Recovery Charge Q
Forward Turn-On Time t
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
DS
GS(th)
V
GSS
DSS
VGS = 10 V ID = 0.84 A
DS(on)
fs
iss
- 150 -
oss
-90-
rss
g
--5.0
gs
--21
gd
d(on)
r
-58-
d(off)
-27-
f
D
V
V
GS
Between lead,
6 mm (0.25") from
package and center of
S
S
I
SM
SD
rr
rr
on
die contact
MOSFET symbol
showing the
integral reverse
p - n junction diode
TJ = 25 °C, IF = 1.8 A, dI/dt = 100 A/µs
-65
-4.1
°C/W
VGS = 0 V, ID = 250 µA 800 - - V
VDS = VGS, ID = 250 µA 2.0 - 4.0 V
= ± 20 V - - ± 100 nA
GS
VDS = 800 V, VGS = 0 V - - 100
= 640 V, VGS = 0 V, TJ = 125 °C - - 500
DS
VDS = 10 V, ID = 0.84 A
VGS = 0 V,
V
= 25 V,
DS
f = 1.0 MHz, see fig. 5
b
b
--6.5Ω
1.0 - - S
- 530 -
--38
= 1.8 A, VDS = 400 V,
I
= 10 V
D
see fig. 6 and 13
b
-8.2-
V
= 400 V, ID = 1.8 A,
DD
R
= 18 Ω, RD= 230 Ω,
G
see fig. 10
b
G
G
TJ = 25 °C, IS = 1.4 A, VGS = 0 V
D
S
D
S
b
-17-
-4.5-
-7.5-
--1.4
--5.6
--1.4V
- 380 570 ns
b
- 0.94 1.4 µC
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
µA
pF
nC Gate-Source Charge Q
ns
nH
A
www.vishay.com Document Number: 91183
2 S-81275-Rev. A, 16-Jun-08
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
IRFIBE20G, SiHFIBE20G
Vishay Siliconix
Fig. 1 - Typical Output Characteristics, TC = 25 °C
Fig. 2 - Typical Output Characteristics, T
= 150 °C
C
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91183 www.vishay.com
S-81275-Rev. A, 16-Jun-08 3
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