Vishay IRFIBC40GLC, SiHFIBC40GLC Data Sheet

IRFIBC40GLC, SiHFIBC40GLC

www.vishay.com	Vishay Siliconix
	Power MOSFET

PRODUCT SUMMARY

VDS (V)		600
RDS(on) ( )		VGS = 10 V	1.2
Qg max. (nC)		39
Qgs (nC)		10
Qgd (nC)		19
Configuration		Single
			D
TO-220 FULLPAK
		G
			S
G D	S	N-Channel MOSFET

FEATURES

• Isolated package

• High voltage isolation = 2.5 kVRMS (t = 60 s;	Available
f = 60 Hz)
• Sink to lead creepage distance = 4.8 mm	Available

•Dynamic dV/dt rating

•Low thermal resistance

•Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

Note

*This datasheet provides information about parts that are RoHS-compliant and / or parts that are non-RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details.

DESCRIPTION

Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single screw fixing.

ORDERING INFORMATION

	Package	TO-220 FULLPAK
	Lead (Pb)-free	IRFIBC40GLCPbF
		SiHFIBC40GLC-E3
	SnPb	IRFIBC40GLC
		SiHFIBC40GLC

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER				SYMBOL	LIMIT	UNIT
Drain-Source Voltage				VDS	600	V
Gate-Source Voltage				VGS	± 20
Continuous Drain Current		VGS at 10 V	TC = 25 °C	ID	3.5
			TC = 100 °C		2.2	A
Pulsed Drain Current a				IDM	14
Linear Derating Factor					0.32	W/°C
Single Pulse Avalanche Energy b				EAS	320	mJ
Repetitive Avalanche Current a				IAR	3.5	A
Repetitive Avalanche Energy a				EAR	4.0	mJ
Maximum Power Dissipation		TC = 25 °C		PD	40	W
Peak Diode Recovery dV/dt c				dV/dt	3.0	V/ns
Operating Junction and Storage Temperature Range				TJ, Tstg	-55 to +150	°C
Soldering Recommendations (Peak temperature) d		for 10 s			300
Mounting Torque		6-32 or M3 screw			10	lbf · in
					1.1	N · m

Notes

a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b.VDD = 50 V, starting TJ = 25 °C, L = 12 μH, RG = 25 , IAS = 3.5 A (see fig. 12).

c.ISD 6.2 A, dI/dt 80 A/μs, VDD VDS, TJ 150 °C.

d.1.6 mm from case.

S16-0763-Rev. B, 02-May-16	1	Document Number: 91181
	For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRFIBC40GLC, SiHFIBC40GLC

www.vishay.com

THERMAL RESISTANCE RATINGS

Vishay Siliconix

	PARAMETER	SYMBOL	TYP.	MAX.	UNIT
	Maximum Junction-to-Ambient	RthJA	-	65	°C/W
	Maximum Junction-to-Case (Drain)	RthJC	-	3.1

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER		SYMBOL	TEST CONDITIONS									MIN.	TYP.	MAX.	UNIT
Static
Drain-Source Breakdown Voltage		VDS	VGS = 0 V, ID = 250 μA									600	-	-	V
VDS Temperature Coefficient		VDS/TJ	Reference to 25 °C, ID = 1 mA									-	0.70	-	V/°C
Gate-Source Threshold Voltage		VGS(th)	VDS = VGS, ID = 250 μA									2.0	-	4.0	V
Gate-Source Leakage		IGSS		VGS = ± 20 V								-	-	± 100	nA
Zero Gate Voltage Drain Current		IDSS	VDS = 600 V, VGS = 0 V									-	-	25	μA
			VDS = 480 VGS = 0 V, TJ = 125 °C									-	-	250
Drain-Source On-State Resistance		RDS(on)	VGS = 10 V			ID = 2.1 A b						-	-	1.2
Forward Transconductance		gfs	VDS = 100 V, ID = 3.7 A b									3.7	-	-	S
Dynamic
Input Capacitance		Ciss			VGS = 0 V,							-	1100	-
Output Capacitance		Coss			VDS = 25 V,							-	140	-	pF
			f = 1.0 MHz, see fig. 5
Reverse Transfer Capacitance		Crss										-	15	-
Drain to Sink Capacitance		C			f = 1.0 MHz							-	12	-
Total Gate Charge		Qg			ID = 6.2 A, VDS = 360 V,							-	-	39
Gate-Source Charge		Qgs	VGS = 10 V									-	-	10	nC
					see fig. 6 and 13 b
Gate-Drain Charge		Qgd										-	-	19
Turn-On Delay Time		td(on)	VDD = 300 V, ID = 6.2 A,									-	12	-
Rise Time		tr										-	20	-
			RG = 9.1 , RD= 47 ,												ns
Turn-Off Delay Time		td(off)										-	27	-
					see fig. 10b
Fall Time		tf										-	17	-
Internal Drain Inductance		LD	Between lead,							D		-	4.5	-
			6 mm (0.25") from
			package and center of			G									nH
Internal Source Inductance		LS	die contact							S		-	7.5	-
Gate Input Resistance		Rg	f = 1 MHz, open drain									0.6	-	3.9
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current		IS	MOSFET symbol								D	-	-	3.5
			showing the												A
			integral reverse			G
Pulsed Diode Forward Current a		I										-	-	14
			p - n junction diode
		SM									S
Body Diode Voltage		VSD	TJ = 25 °C, IS = 3.5 A, VGS = 0 V b									-	-	1.5	V
Body Diode Reverse Recovery Time		trr	TJ = 25 °C, IF = 6.2 A, dI/dt = 100 A/μs b									-	440	660	ns
Body Diode Reverse Recovery Charge		Qrr										-	2.1	3.2	μC
Forward Turn-On Time		ton	Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes

a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b.Pulse width 300 μs; duty cycle 2 %.

S16-0763-Rev. B, 02-May-16	2	Document Number: 91181
	For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRFIBC40GLC, SiHFIBC40GLC

www.vishay.com	Vishay Siliconix

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

				Fig. 3 - Typical Transfer Characteristics
Fig. 1 - Typical Output Characteristics, TC= 25 °C

Fig. 2 - Typical Output Characteristics, TC= 150 °C

Fig. 4 - Normalized On-Resistance vs. Temperature

S16-0763-Rev. B, 02-May-16	3	Document Number: 91181
	For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000