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Document Number: 91176 www.vishay.com
S09-0517-Rev. B, 13-Apr-09 1
Power MOSFET
IRFIB7N50A, SiHFIB7N50A
Vishay Siliconix
FEATURES
• Low Gate Charge Q
g
Results in Simple Drive
Requirement
• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
• Fully Characterized Capacitance and
Avalanche Voltage and Current
• Effective C
oss
Specified
• Compliant to RoHS directive 2002/95/EC
APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
• High Speed Power Switching
• High Voltage Isolation = 2.5 kV
RMS
(t = 60 s, f = 60 Hz)
TYPICAL SMPS TOPOLOGIES
• Two Transistor Forward
• Half and Full Bridge Convertors
• Power Factor Correction Boost
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T
J
= 25 °C, L = 4.5 mH, R
G
= 25 Ω, I
AS
= 11 A (see fig. 12).
c. I
SD
≤ 11 A, dI/dt ≤ 140 A/µs, V
DD
≤ V
DS
, T
J
≤ 150 °C.
d. 1.6 mm from case.
e. Uses IRFB11N50A, SiHFB11N50A data and test conditions.
f. Drain current limited by maximum junction temperature.
PRODUCT SUMMARY
V
DS
(V) 500
R
DS(on)
(Ω)V
GS
= 10 V 0.52
Q
g
(Max.) (nC) 52
Q
gs
(nC) 13
Q
gd
(nC) 18
Configuration Single
N-Channel MOSFET
G
D
S
S
D
G
TO-220 FULLPAK
Available
RoHS*
COMPLIANT
ORDERING INFORMATION
Package TO-220 FULLPAK
Lead (Pb)-free
IRFIB7N50APbF
SiHFIB7N50A-E3
SnPb
IRFIB7N50A
SiHFIB7N50A
ABSOLUTE MAXIMUM RATINGS T
C
= 25 °C, unless otherwise noted
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
DS
500
V
Gate-Source Voltage V
GS
± 30
Continuous Drain Current
f
V
GS
at 10 V
T
C
= 25 °C
I
D
6.6
A
Continuous Drain Current T
C
= 100 °C 4.2
Pulsed Drain Current
a, e
I
DM
44
Linear Derating Factor 0.48 W/°C
Single Pulse Avalanche Energy
b, e
E
AS
275 mJ
Repetitive Avalanche Current
a, e
I
AR
11 A
Repetitive Avalanche Energy
a
E
AR
6.0 mJ
Maximum Power Dissipation T
C
= 25 °C P
D
60 W
Peak Diode Recovery dV/dt
c, e
dV/dt 6.9 V/ns
Operating Junction and Storage Temperature Range T
J
, T
stg
- 55 to + 150
°C
Soldering Recommendations (Peak Temperature) for 10 s 300
d
Mounting Torque 6-32 or M3 screw
10 lbf · in
1.1 N · m
* Pb containing terminations are not RoHS compliant, exemptions may apply
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www.vishay.com Document Number: 91176
2 S09-0517-Rev. B, 13-Apr-09
IRFIB7N50A, SiHFIB7N50A
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
c. C
oss
eff. is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 % to 80 % V
DS
.
d. Uses IRFB11N50A, SiHFB11N50A data and test conditions.
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient R
thJA
-65
°C/W
Maximum Junction-to-Case (Drain) R
thJC
-2.1
SPECIFICATIONS T
J
= 25 °C, unless otherwise noted
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
DS
V
GS
= 0 V, I
D
= 250 µA 500 - - V
V
DS
Temperature Coefficient ΔV
DS
/T
J
Reference to 25 °C, I
D
= 1 mA
d
- 610 - mV/°C
Gate-Source Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= 250 µA 2.0 - 4.0 V
Gate-Source Leakage I
GSS
V
GS
= ± 30 V - - ± 100 nA
Zero Gate Voltage Drain Current I
DSS
V
DS
= 500 V, V
GS
= 0 V - - 25
µA
V
DS
= 400 V, V
GS
= 0 V, T
J
= 125 °C - - 250
Drain-Source On-State Resistance R
DS(on)
V
GS
= 10 V I
D
= 4.0 A
b
- - 0.52 Ω
Forward Transconductance g
fs
V
DS
= 50 V, I
D
= 6.6 A
d
6.1 - - S
Dynamic
Input Capacitance C
iss
V
GS
= 0 V,
V
DS
= 25 V,
f = 1.0 MHz, see fig. 5
d
- 1423 -
pF
Output Capacitance C
oss
- 208 -
Reverse Transfer Capacitance C
rss
-8.1-
Output Capacitance C
oss
V
GS
= 0 V
V
DS
= 1.0 V, f = 1.0 MHz - 2000 -
V
DS
= 400 V, f = 1.0 MHz - 55 -
Effective Output Capacitance C
oss
eff. V
DS
= 0 V to 400 V
c, d
-97-
Total Gate Charge Q
g
V
GS
= 10 V
I
D
= 11 A, V
DS
= 400 V
see fig. 6 and 13
b, d
--52
nC Gate-Source Charge Q
gs
--13
Gate-Drain Charge Q
gd
--18
Turn-On Delay Time t
d(on)
V
DD
= 250 V, I
D
= 11 A
R
G
= 9.1 Ω, R
D
= 22 Ω,
see fig. 10
b, d
-14-
ns
Rise Time t
r
-35-
Turn-Off Delay Time t
d(off)
-32-
Fall Time t
f
-28-
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
S
MOSFET symbol
showing the
integral reverse
p - n junction diode
--6.6
A
Pulsed Diode Forward Current
a
I
SM
--44
Body Diode Voltage V
SD
T
J
= 25 °C, I
S
= 11 A, V
GS
= 0 V
b
--1.5V
Body Diode Reverse Recovery Time t
rr
T
J
= 25 °C, I
F
= 11 A, dI/dt = 100 A/µs
b, d
- 510 770 ns
Body Diode Reverse Recovery Charge Q
rr
-3.45.1µC
Forward Turn-On Time t
on
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
S
D
G
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Document Number: 91176 www.vishay.com
S09-0517-Rev. B, 13-Apr-09 3
IRFIB7N50A, SiHFIB7N50A
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
0.1
1
10
100
0.1 1 10 100
20µs PULSE WIDTH
T = 25 C
J
°
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
4.5V
1
10
100
1 10 100
20µs PULSE WIDTH
T = 150 C
J
°
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
4.5V
0.1
1
10
100
4.0 5.0 6.0 7.0 8.0 9.0
V = 100V
20µs PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J
°
T = 150 C
J
°
-60 -40 -20 0 20 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
3.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
10V
11A