IRFI9Z34G, SiHFI9Z34G
www.vishay.com |
Vishay Siliconix |
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Power MOSFET |
PRODUCT SUMMARY
VDS (V) |
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-60 |
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RDS(on) ( ) |
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VGS = -10 V |
0.14 |
Qg max. (nC) |
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34 |
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Qgs (nC) |
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9.9 |
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Qgd (nC) |
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16 |
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Configuration |
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Single |
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S |
TO-220 FULLPAK |
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G |
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D |
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G D S |
P-Channel MOSFET |
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FEATURES
• Isolated package
• High voltage isolation = 2.5 kVRMS (t = 60 s;
Available
f = 60 Hz)
• Sink to lead creepage distance = 4.8 mm
Available
•P-channel
•175 °C operating temperature
•Dynamic dV/dt rating
•Low thermal resistance
•Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
Note
*This datasheet provides information about parts that are RoHS-compliant and / or parts that are non-RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details.
DESCRIPTION
Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single screw fixing.
ORDERING INFORMATION
Package |
TO-220 FULLPAK |
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Lead (Pb)-free |
IRFI9Z34GPbF |
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SiHFI9Z34G-E3 |
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SnPb |
IRFI9Z34G |
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SiHFI9Z34G |
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ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER |
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SYMBOL |
LIMIT |
UNIT |
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Drain-Source Voltage |
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VDS |
-60 |
V |
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Gate-Source Voltage |
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VGS |
± 20 |
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Continuous Drain Current |
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VGS at -10 V |
TC = 25 °C |
ID |
-12 |
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TC = 100 °C |
-8.5 |
A |
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Pulsed Drain Current a |
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IDM |
-48 |
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Linear Derating Factor |
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0.28 |
W/°C |
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Single Pulse Avalanche Energy b |
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EAS |
370 |
mJ |
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Repetitive Avalanche Current a |
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IAR |
-12 |
A |
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Repetitive Avalanche Energy a |
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EAR |
4.2 |
mJ |
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Maximum Power Dissipation |
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TC = 25 °C |
PD |
42 |
W |
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Peak Diode Recovery dV/dt c |
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dV/dt |
-4.5 |
V/ns |
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Operating Junction and Storage Temperature Range |
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TJ, Tstg |
-55 to +175 |
°C |
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Soldering Recommendations (Peak temperature) d |
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for 10 s |
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300 |
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Mounting Torque |
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6-32 or M3 screw |
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10 |
lbf · in |
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1.1 |
N · m |
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Notes
a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b.VDD = -25 V, starting TJ = 25 °C, L = 3.0 mH, RG = 25 , IAS = -12 A (see fig. 12).
c.ISD -12 A, dI/dt 170 A/μs, VDD VDS, TJ 175 °C.
d.1.6 mm from case.
S16-0763-Rev. B, 02-May-16 |
1 |
Document Number: 91172 |
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For technical questions, contact: hvm@vishay.com |
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFI9Z34G, SiHFI9Z34G
www.vishay.com
THERMAL RESISTANCE RATINGS
Vishay Siliconix
PARAMETER |
SYMBOL |
TYP. |
MAX. |
UNIT |
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Maximum Junction-to-Ambient |
RthJA |
- |
65 |
°C/W |
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Maximum Junction-to-Case (Drain) |
RthJC |
- |
3.6 |
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SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER |
SYMBOL |
TEST CONDITIONS |
MIN. |
TYP. |
MAX. |
UNIT |
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Static |
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Drain-Source Breakdown Voltage |
VDS |
VGS = 0 V, ID = 250 μA |
-60 |
- |
- |
V |
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VDS Temperature Coefficient |
VDS/TJ |
Reference to 25 °C, ID = -1 mA |
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-0.060 |
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V/°C |
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Gate-Source Threshold Voltage |
VGS(th) |
VDS = VGS, ID = 250 μA |
-2.0 |
- |
-4.0 |
V |
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Gate-Source Leakage |
IGSS |
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VGS = ± 20 V |
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- |
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± 100 |
nA |
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Zero Gate Voltage Drain Current |
IDSS |
VDS = -60 V, VGS = 0 V |
- |
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-100 |
μA |
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VDS = -48 V, VGS = 0 V, TJ = 150 °C |
- |
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-500 |
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Drain-Source On-State Resistance |
RDS(on) |
VGS = -10 V |
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ID = -7.2 A b |
- |
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0.14 |
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Forward Transconductance |
gfs |
VDS = -25 V, ID = -7.2 A b |
5.4 |
- |
- |
S |
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Dynamic |
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Input Capacitance |
Ciss |
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VGS = 0 V, |
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- |
1100 |
- |
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Output Capacitance |
Coss |
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VDS = -25 V, |
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620 |
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pF |
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Reverse Transfer Capacitance |
Crss |
f = 1.0 MHz, see fig. 5 |
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100 |
- |
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Drain to Sink Capacitance |
C |
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f = 1.0 MHz |
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- |
12 |
- |
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Total Gate Charge |
Qg |
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ID = -18 A, VDS = -48 V, |
- |
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34 |
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Gate-Source Charge |
Qgs |
VGS = -10 V |
- |
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9.9 |
nC |
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see fig. 6 and 13 b |
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Gate-Drain Charge |
Qgd |
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- |
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16 |
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Turn-On Delay Time |
td(on) |
VDD = -30 V, ID = -18 A, |
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18 |
- |
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Rise Time |
tr |
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120 |
- |
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RG = 12 , RD= 1.5 , |
ns |
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Turn-Off Delay Time |
td(off) |
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20 |
- |
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see fig. 10 b |
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Fall Time |
tf |
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58 |
- |
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Internal Drain Inductance |
LD |
Between lead, |
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D |
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4.5 |
- |
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6 mm (0.25") from |
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nH |
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package and center of |
G |
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Internal Source Inductance |
LS |
die contact |
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- |
7.5 |
- |
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S |
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Gate Input Resistance |
Rg |
f = 1 MHz, open drain |
0.7 |
- |
3.9 |
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Drain-Source Body Diode Characteristics |
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Continuous Source-Drain Diode Current |
IS |
MOSFET symbol |
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D |
- |
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-12 |
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showing the |
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A |
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integral reverse |
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Pulsed Diode Forward Current a |
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G |
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I |
p -n junction diode |
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S |
- |
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-48 |
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SM |
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Body Diode Voltage |
VSD |
TJ = 25 °C, IS = -12 A, VGS = 0 |
V b |
- |
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-6.3 |
V |
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Body Diode Reverse Recovery Time |
trr |
TJ = 25 °C, IF = -18 A, dI/dt = 100 |
A/μs b |
- |
100 |
200 |
ns |
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Body Diode Reverse Recovery Charge |
Qrr |
- |
0.28 |
0.52 |
μC |
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Forward Turn-On Time |
ton |
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) |
Notes
a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b.Pulse width 300 μs; duty cycle 2 %.
S16-0763-Rev. B, 02-May-16 |
2 |
Document Number: 91172 |
|
For technical questions, contact: hvm@vishay.com |
|
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFI9Z34G, SiHFI9Z34G
www.vishay.com |
Vishay Siliconix |
|
|
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) |
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Fig. 1 - Typical Output Characteristics, TC= 25 °C |
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Fig. 3 - Typical Transfer Characteristics |
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Fig. 2 - Typical Output Characteristics, TC= 175 °C |
Fig. 4 - Normalized On-Resistance vs. Temperature |
S16-0763-Rev. B, 02-May-16 |
3 |
Document Number: 91172 |
|
For technical questions, contact: hvm@vishay.com |
|
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000