Vishay IRFI9Z34G, SiHFI9Z34G Data Sheet

IRFI9Z34G, SiHFI9Z34G

www.vishay.com	Vishay Siliconix
	Power MOSFET

PRODUCT SUMMARY

VDS (V)		-60
RDS(on) ( )		VGS = -10 V	0.14
Qg max. (nC)		34
Qgs (nC)		9.9
Qgd (nC)		16
Configuration		Single
			S
TO-220 FULLPAK
		G
			D
	G D S	P-Channel MOSFET

FEATURES

• Isolated package

• High voltage isolation = 2.5 kVRMS (t = 60 s;

Available

f = 60 Hz)

• Sink to lead creepage distance = 4.8 mm

Available

•P-channel

•175 °C operating temperature

•Dynamic dV/dt rating

•Low thermal resistance

•Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

Note

*This datasheet provides information about parts that are RoHS-compliant and / or parts that are non-RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details.

DESCRIPTION

Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single screw fixing.

ORDERING INFORMATION

	Package	TO-220 FULLPAK
	Lead (Pb)-free	IRFI9Z34GPbF
		SiHFI9Z34G-E3
	SnPb	IRFI9Z34G
		SiHFI9Z34G

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER				SYMBOL	LIMIT	UNIT
Drain-Source Voltage				VDS	-60	V
Gate-Source Voltage				VGS	± 20
Continuous Drain Current		VGS at -10 V	TC = 25 °C	ID	-12
			TC = 100 °C		-8.5	A
Pulsed Drain Current a				IDM	-48
Linear Derating Factor					0.28	W/°C
Single Pulse Avalanche Energy b				EAS	370	mJ
Repetitive Avalanche Current a				IAR	-12	A
Repetitive Avalanche Energy a				EAR	4.2	mJ
Maximum Power Dissipation		TC = 25 °C		PD	42	W
Peak Diode Recovery dV/dt c				dV/dt	-4.5	V/ns
Operating Junction and Storage Temperature Range				TJ, Tstg	-55 to +175	°C
Soldering Recommendations (Peak temperature) d		for 10 s			300
Mounting Torque		6-32 or M3 screw			10	lbf · in
					1.1	N · m

Notes

a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b.VDD = -25 V, starting TJ = 25 °C, L = 3.0 mH, RG = 25 , IAS = -12 A (see fig. 12).

c.ISD -12 A, dI/dt 170 A/μs, VDD VDS, TJ 175 °C.

d.1.6 mm from case.

S16-0763-Rev. B, 02-May-16	1	Document Number: 91172
	For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRFI9Z34G, SiHFI9Z34G

www.vishay.com

THERMAL RESISTANCE RATINGS

Vishay Siliconix

	PARAMETER	SYMBOL	TYP.	MAX.	UNIT
	Maximum Junction-to-Ambient	RthJA	-	65	°C/W
	Maximum Junction-to-Case (Drain)	RthJC	-	3.6

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

	PARAMETER	SYMBOL	TEST CONDITIONS				MIN.	TYP.	MAX.	UNIT
	Static
	Drain-Source Breakdown Voltage	VDS	VGS = 0 V, ID = 250 μA				-60	-	-	V
	VDS Temperature Coefficient	VDS/TJ	Reference to 25 °C, ID = -1 mA				-	-0.060	-	V/°C
	Gate-Source Threshold Voltage	VGS(th)	VDS = VGS, ID = 250 μA				-2.0	-	-4.0	V
	Gate-Source Leakage	IGSS		VGS = ± 20 V			-	-	± 100	nA
	Zero Gate Voltage Drain Current	IDSS	VDS = -60 V, VGS = 0 V				-	-	-100	μA
			VDS = -48 V, VGS = 0 V, TJ = 150 °C				-	-	-500
	Drain-Source On-State Resistance	RDS(on)	VGS = -10 V		ID = -7.2 A b		-	-	0.14
	Forward Transconductance	gfs	VDS = -25 V, ID = -7.2 A b				5.4	-	-	S
	Dynamic
	Input Capacitance	Ciss		VGS = 0 V,			-	1100	-
	Output Capacitance	Coss		VDS = -25 V,			-	620	-	pF
	Reverse Transfer Capacitance	Crss	f = 1.0 MHz, see fig. 5				-	100	-
	Drain to Sink Capacitance	C		f = 1.0 MHz			-	12	-
	Total Gate Charge	Qg		ID = -18 A, VDS = -48 V,			-	-	34
	Gate-Source Charge	Qgs	VGS = -10 V				-	-	9.9	nC
					see fig. 6 and 13 b
	Gate-Drain Charge	Qgd					-	-	16
	Turn-On Delay Time	td(on)	VDD = -30 V, ID = -18 A,				-	18	-
	Rise Time	tr					-	120	-
			RG = 12 , RD= 1.5 ,							ns
	Turn-Off Delay Time	td(off)					-	20	-
				see fig. 10 b
	Fall Time	tf					-	58	-
	Internal Drain Inductance	LD	Between lead,			D	-	4.5	-
			6 mm (0.25") from
										nH
			package and center of			G
	Internal Source Inductance	LS	die contact				-	7.5	-
						S
	Gate Input Resistance	Rg	f = 1 MHz, open drain				0.7	-	3.9
	Drain-Source Body Diode Characteristics
	Continuous Source-Drain Diode Current	IS	MOSFET symbol			D	-	-	-12
			showing the
										A
			integral reverse
	Pulsed Diode Forward Current a					G
		I	p -n junction diode			S	-	-	-48
		SM

	Body Diode Voltage	VSD	TJ = 25 °C, IS = -12 A, VGS = 0	V b	-	-	-6.3	V
	Body Diode Reverse Recovery Time	trr	TJ = 25 °C, IF = -18 A, dI/dt = 100	A/μs b	-	100	200	ns
	Body Diode Reverse Recovery Charge	Qrr			-	0.28	0.52	μC
	Forward Turn-On Time	ton	Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes

a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b.Pulse width 300 μs; duty cycle 2 %.

S16-0763-Rev. B, 02-May-16	2	Document Number: 91172
	For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRFI9Z34G, SiHFI9Z34G

www.vishay.com	Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

	Fig. 1 - Typical Output Characteristics, TC= 25 °C		Fig. 3 - Typical Transfer Characteristics

Fig. 2 - Typical Output Characteristics, TC= 175 °C

Fig. 4 - Normalized On-Resistance vs. Temperature

S16-0763-Rev. B, 02-May-16	3	Document Number: 91172
	For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000