IRFI9Z14G, SiHFI9Z14G
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) |
- 60 |
|
|
RDS(on) (Ω) |
VGS = - 10 V |
|
0.50 |
Qg (Max.) (nC) |
12 |
|
|
Qgs (nC) |
3.8 |
|
|
Qgd (nC) |
5.1 |
|
|
Configuration |
Single |
|
|
|
|
|
|
|
|
|
S |
TO-220 FULLPAK
G
D
P-Channel MOSFET
G D S
FEATURES
•Isolated Package
•High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz)
•Sink to Lead Creepage Distance = 4.8 mm
•P-Channel
•175 °C Operating Temperature
•Dynamic dV/dt Rating
•Low Thermal Resistance
•Lead (Pb)-free Available
DESCRIPTION
Available
RoHS*
COMPLIANT
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single screw fixing.
ORDERING INFORMATION |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Package |
|
|
TO-220 FULLPAK |
|
|
|||
Lead (Pb)-free |
|
|
IRFI9Z14GPbF |
|
|
|||
|
|
SiHFI9Z14G-E3 |
|
|
||||
|
|
|
|
|
|
|||
SnPb |
|
|
IRFI9Z14G |
|
|
|
||
|
|
|
|
|
|
|
||
|
|
SiHFI9Z14G |
|
|
|
|||
|
|
|
|
|
|
|
||
|
|
|
|
|
|
|||
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted |
|
|
||||||
PARAMETER |
|
|
|
|
SYMBOL |
LIMIT |
UNIT |
|
|
|
|
|
|
|
|
|
|
Drain-Source Voltage |
|
|
|
|
VDS |
- 60 |
V |
|
Gate-Source Voltage |
|
|
|
|
VGS |
± 20 |
||
|
|
|
|
|
||||
Continuous Drain Current |
|
VGS at - 10 V |
|
TC = 25 °C |
|
ID |
- 5.3 |
|
|
|
TC = 100 °C |
|
- 3.8 |
A |
|||
|
|
|
|
|
|
|||
Pulsed Drain Currenta |
|
|
|
|
IDM |
- 21 |
|
|
Linear Derating Factor |
|
|
|
|
|
0.18 |
W/°C |
|
Single Pulse Avalanche Energyb |
|
|
|
|
EAS |
120 |
mJ |
|
Repetitive Avalanche Currenta |
|
|
|
|
IAR |
- 5.3 |
A |
|
Repetitive Avalanche Energya |
|
|
|
|
EAR |
2.7 |
mJ |
|
Maximum Power Dissipation |
|
TC = 25 °C |
|
PD |
27 |
W |
||
Peak Diode Recovery dV/dtc |
|
|
|
|
dV/dt |
- 4.5 |
V/ns |
|
Operating Junction and Storage Temperature Range |
|
|
|
|
TJ, Tstg |
- 55 to + 175 |
°C |
|
Soldering Recommendations (Peak Temperature) |
|
for 10 s |
|
|
300d |
|||
|
|
|
|
|||||
Mounting Torque |
|
6-32 or M3 screw |
|
|
10 |
lbf · in |
||
|
|
|
1.1 |
N · m |
||||
|
|
|
|
|
|
|
Notes
a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b.VDD = - 25 V, starting TJ = 25 °C, L = 5.0 mH, RG = 25 Ω, IAS = - 5.3 A (see fig. 12).
c.ISD ≤ - 6.7 A, dI/dt ≤ 90 A/µs, VDD ≤ VDS, TJ ≤ 175 °C.
d.1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91170 |
www.vishay.com |
S09-0062-Rev. A, 02-Feb-09 |
1 |
IRFI9Z14G, SiHFI9Z14G
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER |
SYMBOL |
TYP. |
MAX. |
UNIT |
|
|
|
|
|
|
|
Maximum Junction-to-Ambient |
RthJA |
- |
65 |
°C/W |
|
Maximum Junction-to-Case (Drain) |
RthJC |
- |
5.5 |
||
|
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER |
|
SYMBOL |
|
|
|
TEST CONDITIONS |
|
MIN. |
TYP. |
MAX. |
UNIT |
|||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Static |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Drain-Source Breakdown Voltage |
|
VDS |
|
|
VGS = 0 V, ID = - 250 µA |
- 60 |
- |
- |
V |
|||||||||
VDS Temperature Coefficient |
|
VDS/TJ |
|
Reference to 25 °C, ID = - 1 mA |
- |
- 0.060 |
- |
V/°C |
||||||||||
Gate-Source Threshold Voltage |
|
VGS(th) |
|
|
VDS = VGS, ID = - 250 µA |
- 2.0 |
- |
- 4.0 |
V |
|||||||||
Gate-Source Leakage |
|
IGSS |
|
|
|
|
|
VGS = ± 20 V |
|
|
- |
- |
± 100 |
nA |
||||
Zero Gate Voltage Drain Current |
|
IDSS |
|
|
VDS = - 60 V, VGS = 0 V |
- |
- |
- 100 |
µA |
|||||||||
|
VDS = - 48 VGS = 0 V, TJ = 150 °C |
- |
- |
- 500 |
||||||||||||||
|
|
|
|
|
||||||||||||||
Drain-Source On-State Resistance |
|
RDS(on) |
VGS = - 10 V |
|
|
ID = - 3.2 Ab |
- |
- |
0.50 |
Ω |
||||||||
Forward Transconductance |
|
g |
fs |
|
|
V |
DS |
= - 25 V, I |
|
= - 3.2 Ab |
1.6 |
- |
- |
S |
||||
|
|
|
|
|
|
|
|
D |
|
|
|
|
|
|
|
|||
Dynamic |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Input Capacitance |
|
Ciss |
|
|
|
|
|
|
VGS = 0 V, |
|
|
- |
270 |
- |
|
|||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|||
Output Capacitance |
|
Coss |
|
|
|
|
|
VDS = - 25 V, |
|
|
- |
170 |
- |
pF |
||||
|
|
|
|
|
|
|
f = 1.0 MHz, see fig. 5 |
|
|
|
|
|||||||
Reverse Transfer Capacitance |
|
Crss |
|
|
|
|
- |
31 |
- |
|||||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
||||||
Drain to Sink Capacitance |
|
C |
|
|
|
|
|
|
f = 1.0 MHz |
|
|
- |
12 |
- |
|
|||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Total Gate Charge |
|
Qg |
|
|
|
|
|
|
ID = - 6.7 A, VDS = - 48 V, |
- |
- |
12 |
|
|||||
Gate-Source Charge |
|
Qgs |
VGS = - 10 V |
|
- |
- |
3.8 |
nC |
||||||||||
|
|
see fig. 6 and 13b |
||||||||||||||||
Gate-Drain Charge |
|
Qgd |
|
|
|
|
|
|
|
|
|
|
|
- |
- |
5.1 |
|
|
Turn-On Delay Time |
|
td(on) |
|
|
|
|
|
|
|
|
|
|
|
- |
11 |
- |
|
|
Rise Time |
|
tr |
|
|
VDD = - 30 V, ID = - 6.7 A, |
- |
63 |
- |
|
|||||||||
|
|
|
|
|
|
|
RG = 24 Ω, RD= 4.0 Ω, |
|
|
|
ns |
|||||||
Turn-Off Delay Time |
|
td(off) |
|
|
|
- |
9.6 |
- |
||||||||||
|
|
|
|
|
|
|
see fig. 10b |
|
|
|
||||||||
Fall Time |
|
tf |
|
|
|
|
|
|
|
|
|
|
|
- |
31 |
- |
|
|
Internal Drain Inductance |
|
LD |
Between lead, |
|
|
|
D |
- |
4.5 |
- |
|
|||||||
|
6 mm (0.25") from |
|
|
|
|
|
||||||||||||
|
|
|
|
|
|
|
|
|
|
|
nH |
|||||||
|
|
|
|
package and center of |
|
|
G |
|
|
|
|
|||||||
|
|
|
|
|
|
|
|
|
|
|||||||||
Internal Source Inductance |
|
LS |
die contact |
|
|
|
|
|
|
|
- |
7.5 |
- |
|
||||
|
|
|
|
|
|
|
|
|
|
|
S |
|
||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Drain-Source Body Diode Characteristics |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Continuous Source-Drain Diode Current |
|
IS |
MOSFET symbol |
|
|
|
D |
- |
- |
- 5.3 |
|
|||||||
|
showing the |
|
|
|
|
|
|
|
||||||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
A |
|||||
Pulsed Diode Forward Currenta |
|
ISM |
integral reverse |
|
|
G |
|
- |
- |
- 21 |
||||||||
|
|
|
|
|
||||||||||||||
|
p - n junction diode |
|
|
|
S |
|
||||||||||||
Body Diode Voltage |
|
V |
|
T |
J |
= 25 °C, I = - 5.3 A, V |
GS |
= 0 Vb |
- |
- |
- 5 .5 |
V |
||||||
|
|
SD |
|
|
|
|
|
S |
|
|
|
|
|
|
|
|||
Body Diode Reverse Recovery Time |
|
trr |
T = 25 °C, I |
= - 6.7 A, dI/dt = 100 A/µsb |
- |
80 |
160 |
ns |
||||||||||
|
|
|
|
|
|
|
|
|||||||||||
Body Diode Reverse Recovery Charge |
|
Qrr |
J |
|
|
|
F |
|
|
|
|
|
|
- |
0.096 |
0.19 |
µC |
|
|
|
|
|
|
|
|
|
|
|
|
|
|||||||
Forward Turn-On Time |
|
ton |
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) |
Notes
a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b.Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
www.vishay.com |
Document Number: 91170 |
2 |
S09-0062-Rev. A, 02-Feb-09 |
IRFI9Z14G, SiHFI9Z14G
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Fig. 1 - Typical Output Characteristics, TC= 25 °C |
Fig. 3 - Typical Transfer Characteristics |
|
|||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Fig. 2 - Typical Output Characteristics, TC= 175 °C |
Fig. 4 - Normalized On-Resistance vs. Temperature |
Document Number: 91170 |
www.vishay.com |
S09-0062-Rev. A, 02-Feb-09 |
3 |