IRFI9634G, SiHFI9634G
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) |
- 250 |
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RDS(on) (Ω) |
VGS = - 10 V |
1.0 |
Qg (Max.) (nC) |
38 |
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Qgs (nC) |
8.0 |
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Qgd (nC) |
18 |
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Configuration |
Single |
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TO-220 FULLPAK |
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S |
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G |
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D |
G D |
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P-Channel MOSFET |
FEATURES
• Advanced Process Technology
• Dynamic dV/dt Rating
• 150 °C Operating Temperature
•Fast Switching
•P-Channel
•Fully Avalanche Rated
•Lead (Pb)-free Available
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single screw fixing.
ORDERING INFORMATION |
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Package |
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TO-220 FULLPAK |
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Lead (Pb)-free |
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IRFI9634GPbF |
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SiHFI9634G-E3 |
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SnPb |
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IRFI9634G |
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SiHFI9634G |
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ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted |
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PARAMETER |
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SYMBOL |
LIMIT |
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UNIT |
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Drain-Source Voltage |
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VDS |
- 250 |
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V |
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Gate-Source Voltage |
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VGS |
± 20 |
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Continuous Drain Current |
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VGS at - 10 V |
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TC = 25 °C |
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ID |
- 4.1 |
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TC = 100 °C |
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- 2.6 |
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A |
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Pulsed Drain Currenta |
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IDM |
- 16 |
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Linear Derating Factor |
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0.28 |
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W/°C |
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Single Pulse Avalanche Energyb |
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EAS |
520 |
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mJ |
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Repetitive Avalanche Currenta |
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IAR |
- 4.1 |
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A |
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Repetitive Avalanche Energya |
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EAR |
3.5 |
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mJ |
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Maximum Power Dissipation |
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TC = 25 °C |
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PD |
35 |
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W |
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Peak Diode Recovery dV/dtc |
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dV/dt |
- 5.0 |
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V/ns |
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Operating Junction and Storage Temperature Range |
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TJ, Tstg |
- 55 to + 150 |
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°C |
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Soldering Recommendations (Peak Temperature) |
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for 10 s |
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300d |
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Mounting Torque |
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6-32 or M3 screw |
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10 |
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lbf · in |
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1.1 |
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N · m |
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Notes |
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a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). |
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b. Starting TJ = 25 °C, L = 62 mH, RG = 25 Ω, IAS = - 4.1 A (see fig. 12). |
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c. ISD ≤ - 4.1 A, dI/dt ≤ - 640 A/µs, VDD ≤ VDS, TJ ≤ 150 °C. |
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d. 1.6 mm from case. |
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* Pb containing terminations are not RoHS compliant, exemptions may apply |
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Document Number: 91168 |
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www.vishay.com |
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S09-0062-Rev. A, 02-Feb-09 |
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1 |
IRFI9634G, SiHFI9634G
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER |
SYMBOL |
TYP. |
MAX. |
UNIT |
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Maximum Junction-to-Ambient |
RthJA |
- |
65 |
°C/W |
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Maximum Junction-to-Case (Drain) |
RthJC |
- |
3.6 |
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SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER |
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SYMBOL |
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TEST CONDITIONS |
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MIN. |
TYP. |
MAX. |
UNIT |
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Static |
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Drain-Source Breakdown Voltage |
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VDS |
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VGS = 0 V, ID = 250 µA |
- 250 |
- |
- |
V |
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VDS Temperature Coefficient |
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VDS/TJ |
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Reference to 25 °C, ID = 1 mA |
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- 0.27 |
- |
V/°C |
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Gate-Source Threshold Voltage |
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VGS(th) |
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VDS = VGS, ID = 250 µA |
- 2.0 |
- |
- 4.0 |
V |
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Gate-Source Leakage |
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IGSS |
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VGS = ± 20 V |
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- |
- |
± 100 |
nA |
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Zero Gate Voltage Drain Current |
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IDSS |
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VDS = - 250 V, VGS = 0 V |
- |
- |
- 25 |
µA |
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VDS = - 200 V, VGS = 0 V, TJ = 150 °C |
- |
- |
- 250 |
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Drain-Source On-State Resistance |
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RDS(on) |
VGS = - 10 V |
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ID = - 2.5 Ab |
- |
- |
1.0 |
Ω |
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Forward Transconductance |
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g |
fs |
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V |
DS |
= - 50 V, I = - 4.1 Ab |
2.2 |
- |
- |
S |
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D |
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Dynamic |
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Input Capacitance |
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Ciss |
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VGS = 0 V, |
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- |
680 |
- |
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Output Capacitance |
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Coss |
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VDS = - 25 V, |
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- |
170 |
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pF |
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f = 1.0 MHz, see fig. 5 |
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Reverse Transfer Capacitance |
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Crss |
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- |
40 |
- |
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Drain to Sink Capacitance |
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C |
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f = 1.0 MHz |
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12 |
- |
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Total Gate Charge |
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Qg |
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ID = - 4.1 A, VDS = - 200 V, |
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38 |
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Gate-Source Charge |
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Qgs |
VGS = - 10 V |
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- |
- |
8.0 |
nC |
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see fig. 6 and 13b |
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Gate-Drain Charge |
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Qgd |
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- |
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18 |
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Turn-On Delay Time |
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td(on) |
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12 |
- |
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Rise Time |
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tr |
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VDD = - 130 V, ID = - 4.1 A, |
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23 |
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RG = 12 Ω, RD= 31 Ω, |
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ns |
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Turn-Off Delay Time |
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td(off) |
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34 |
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see fig. 10b |
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Fall Time |
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tf |
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21 |
- |
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Internal Drain Inductance |
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LD |
Between lead, |
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D |
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4.5 |
- |
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6 mm (0.25") from |
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nH |
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package and center of |
G |
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Internal Source Inductance |
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LS |
die contact |
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7.5 |
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Drain-Source Body Diode Characteristics |
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Continuous Source-Drain Diode Current |
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IS |
MOSFET symbol |
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D |
- |
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- 4.1 |
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showing the |
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A |
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Pulsed Diode Forward Currenta |
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ISM |
integral reverse |
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G |
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- |
- |
- 16 |
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p - n junction diode |
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S |
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Body Diode Voltage |
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V |
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T |
J |
= 25 °C, I |
= - 4.1 A, V |
GS |
= 0 Vb |
- |
- |
- 6.5 |
V |
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SD |
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S |
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Body Diode Reverse Recovery Time |
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trr |
T = 25 °C, I |
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= - 4.1 A, dI/dt = -100 A/µsb |
- |
190 |
290 |
ns |
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F |
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Body Diode Reverse Recovery Charge |
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Qrr |
J |
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1.5 |
2.2 |
µC |
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Forward Turn-On Time |
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ton |
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) |
Notes
a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b.Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
www.vishay.com |
Document Number: 91168 |
2 |
S09-0062-Rev. A, 02-Feb-09 |
IRFI9634G, SiHFI9634G
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
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Fig. 1 - Typical Output Characteristics, TC = 25 °C |
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Fig. 3 - Typical Transfer Characteristics |
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Fig. 2 - Typical Output Characteristics, T C= 150 °C |
Fig. 4 - Normalized On-Resistance vs. Temperature |
Document Number: 91168 |
www.vishay.com |
S09-0062-Rev. A, 02-Feb-09 |
3 |