Vishay IRFI9634G, SiHFI9634G Data Sheet

IRFI9634G, SiHFI9634G

Vishay Siliconix

Power MOSFET

PRODUCT SUMMARY

VDS (V)	- 250
RDS(on) (Ω)	VGS = - 10 V	1.0
Qg (Max.) (nC)	38
Qgs (nC)	8.0
Qgd (nC)	18
Configuration	Single
TO-220 FULLPAK		S
	G
	S	D
G D
	P-Channel MOSFET

FEATURES

• Advanced Process Technology

• Dynamic dV/dt Rating

• 150 °C Operating Temperature

•Fast Switching

•P-Channel

•Fully Avalanche Rated

•Lead (Pb)-free Available

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single screw fixing.

ORDERING INFORMATION
Package				TO-220 FULLPAK
Lead (Pb)-free				IRFI9634GPbF
				SiHFI9634G-E3
SnPb				IRFI9634G
				SiHFI9634G
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER						SYMBOL	LIMIT		UNIT
Drain-Source Voltage						VDS	- 250		V
Gate-Source Voltage						VGS	± 20
Continuous Drain Current		VGS at - 10 V		TC = 25 °C		ID	- 4.1
				TC = 100 °C			- 2.6		A
Pulsed Drain Currenta						IDM	- 16
Linear Derating Factor							0.28		W/°C
Single Pulse Avalanche Energyb						EAS	520		mJ
Repetitive Avalanche Currenta						IAR	- 4.1		A
Repetitive Avalanche Energya						EAR	3.5		mJ
Maximum Power Dissipation		TC = 25 °C				PD	35		W
Peak Diode Recovery dV/dtc						dV/dt	- 5.0		V/ns
Operating Junction and Storage Temperature Range						TJ, Tstg	- 55 to + 150		°C
Soldering Recommendations (Peak Temperature)		for 10 s					300d
Mounting Torque		6-32 or M3 screw					10		lbf · in
							1.1		N · m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting TJ = 25 °C, L = 62 mH, RG = 25 Ω, IAS = - 4.1 A (see fig. 12).
c. ISD ≤ - 4.1 A, dI/dt ≤ - 640 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91168								www.vishay.com
S09-0062-Rev. A, 02-Feb-09								1

IRFI9634G, SiHFI9634G

Vishay Siliconix

THERMAL RESISTANCE RATINGS

	PARAMETER	SYMBOL	TYP.	MAX.	UNIT
	Maximum Junction-to-Ambient	RthJA	-	65	°C/W
	Maximum Junction-to-Case (Drain)	RthJC	-	3.6

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = 250 µA

- 250

-

-

V

VDS Temperature Coefficient

VDS/TJ

Reference to 25 °C, ID = 1 mA

-

- 0.27

-

V/°C

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 µA

- 2.0

-

- 4.0

V

Gate-Source Leakage

IGSS

VGS = ± 20 V

-

-

± 100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = - 250 V, VGS = 0 V

-

-

- 25

µA

VDS = - 200 V, VGS = 0 V, TJ = 150 °C

-

-

- 250

Drain-Source On-State Resistance

RDS(on)

VGS = - 10 V

ID = - 2.5 Ab

-

-

1.0

Ω

Forward Transconductance

g

fs

V

DS

= - 50 V, I = - 4.1 Ab

2.2

-

-

S

D

Dynamic

Input Capacitance

Ciss

VGS = 0 V,

-

680

-

Output Capacitance

Coss

VDS = - 25 V,

-

170

-

pF

f = 1.0 MHz, see fig. 5

Reverse Transfer Capacitance

Crss

-

40

-

Drain to Sink Capacitance

C

f = 1.0 MHz

-

12

-

Total Gate Charge

Qg

ID = - 4.1 A, VDS = - 200 V,

-

-

38

Gate-Source Charge

Qgs

VGS = - 10 V

-

-

8.0

nC

see fig. 6 and 13b

Gate-Drain Charge

Qgd

-

-

18

Turn-On Delay Time

td(on)

-

12

-

Rise Time

tr

VDD = - 130 V, ID = - 4.1 A,

-

23

-

RG = 12 Ω, RD= 31 Ω,

ns

Turn-Off Delay Time

td(off)

-

34

-

see fig. 10b

Fall Time

tf

-

21

-

Internal Drain Inductance

LD

Between lead,

D

-

4.5

-

6 mm (0.25") from

nH

package and center of

G

Internal Source Inductance

LS

die contact

-

7.5

-

S

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

IS

MOSFET symbol

D

-

-

- 4.1

showing the

A

Pulsed Diode Forward Currenta

ISM

integral reverse

G

-

-

- 16

p - n junction diode

S

Body Diode Voltage

V

T

J

= 25 °C, I

= - 4.1 A, V

GS

= 0 Vb

-

-

- 6.5

V

SD

S

Body Diode Reverse Recovery Time

trr

T = 25 °C, I

= - 4.1 A, dI/dt = -100 A/µsb

-

190

290

ns

F

Body Diode Reverse Recovery Charge

Qrr

J

-

1.5

2.2

µC

Forward Turn-On Time

ton

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes

a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b.Pulse width ≤ 300 µs; duty cycle ≤ 2 %.

www.vishay.com	Document Number: 91168
2	S09-0062-Rev. A, 02-Feb-09

IRFI9634G, SiHFI9634G

Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

	Fig. 1 - Typical Output Characteristics, TC = 25 °C		Fig. 3 - Typical Transfer Characteristics

Fig. 2 - Typical Output Characteristics, T C= 150 °C

Fig. 4 - Normalized On-Resistance vs. Temperature

Document Number: 91168	www.vishay.com
S09-0062-Rev. A, 02-Feb-09	3