Vishay IRFI9620G, SiHFI9620G Data Sheet

Power MOSFET

IRFI9620G, SiHFI9620G

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) - 200

(Ω)V

R

DS(on)

Q

(Max.) (nC) 15

g

Q

(nC) 3.2

gs

Q

(nC) 8.4

gd

Configuration Single

= - 10 V 1.5

GS

FEATURES

• Isolated Package

• High Voltage Isolation = 2.5 kV
f = 60 Hz)

• Sink to Lead Creepage Dist. = 4.8 mm

• P-Channel

• Dynamic dV/dt

• Low Thermal Resistance

• Lead (Pb)-free Available

TO-220 FULLPAK

S

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,

G

ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220 FULLPAK eliminates the need for additional
insulating hardware in commercial-industrial applications.
The molding compound used provides a high isolation

S

D

G

D

P-Channel MOSFET

capability and a low thermal resistance between the tab and
external heatsink. This isolation is equivalent to using a 100
micron mica barrier with standard TO-220 product. The
FULLPAK is mounted to a heatsink using a single clip or by
a single screw fixing.

ORDERING INFORMATION

Package TO-220 FULLPAK

Lead (Pb)-free

SnPb

IRFI9620GPbF
SiHFI9620G-E3
IRFI9620G
SiHFI9620G

(t = 60 s;

RMS

Available

RoHS*

COMPLIANT

ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

Gate-Source Voltage V

= 25 °C

T

Continuous Drain Current V

Pulsed Drain Current

a

at - 10 V

GS

C

= 100 °C - 1.9

C

DS

± 20

GS

I

D

IDM - 12

Linear Derating Factor 0.24 W/°C

Single Pulse Avalanche Energy

Repetitive Avalanche Current

Repetitive Avalanche Energy

Maximum Power Dissipation T

Peak Diode Recovery dV/dt

Operating Junction and Storage Temperature Range T

b

a

a

= 25 °C P

c

C

E

AS

I

AR

E

AR

D

dV/dt - 5.0 V/ns

, T

J

stg

Soldering Recommendations (Peak Temperature) for 10 s 300

Mounting Torque 6-32 or M3 screw

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

= - 50 V, starting TJ = 25 °C, L = 13 mH, RG = 25 Ω, IAS = - 3.0 A (see fig. 12).

b. V

DD

≤ - 3.9 A, dI/dt ≤ 95 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.

c. I

SD

d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91166 www.vishay.com
S09-0011-Rev. A, 19-Jan-09 1

- 200

- 3.0

80 mJ

- 3.0 A

3.0 mJ

30 W

- 55 to + 150

d

10 lbf · in

1.1 N · m

V

AT

°C

IRFI9620G, SiHFI9620G

Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient R

Maximum Junction-to-Case (Drain) R

thJA

thJC

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

Temperature Coefficient ΔVDS/TJ Reference to 25 °C, ID = - 1 mA - - 0.22 - V/°C

V

DS

Gate-Source Threshold Voltage V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

Drain-Source On-State Resistance R

Forward Transconductance g

Dynamic

Input Capacitance C

Reverse Transfer Capacitance C

Drain to Sink Capacitance C f = 1 MHz - 12 -

Total Gate Charge Q

Gate-Drain Charge Q

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Internal Drain Inductance L

Internal Source Inductance L

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

Pulsed Diode Forward Current

a

Body Diode Voltage V

Body Diode Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

Forward Turn-On Time t

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.

DS

GS(th)

V

GSS

DSS

DS(on)

fs

iss

- 110 -

oss

-33-

rss

g

--3.2

gs

--8.4

gd

d(on)

r

-7.3-

d(off)

-19-

f

D

V

DS

VGS = - 10 V ID = - 1.8 A

V

GS

Between lead,
6 mm (0.25") from
package and center of

S

S

I

SM

SD

rr

rr

on

die contact

MOSFET symbol
showing the

integral reverse
p - n junction diode

TJ = 25 °C, IS = - 3.0 A, VGS = 0 V

TJ = 25 °C, IF = - 3.9 A, dI/dt = 100 A/µs

-65

-4.1

°C/W

VGS = 0 V, ID = - 250 µA - 200 - - V

VDS = VGS, ID = - 250 µA - 2.0 - - 4.0 V

= ± 20 V - - ± 100 nA

GS

VDS = - 200 V, VGS = 0 V - - - 100

= - 160 V, VGS = 0 V, TJ = 125 °C - - - 500

VDS = - 50 V, ID = - 1.8 A

VGS = 0 V,

V

= - 15 V,

DS

f = 1.0 MHz, see fig. 5

b

b

--1.5Ω

1.3 - - S

- 340 -

--15

= - 2.1 A, VDS = - 160 V,

I

= - 10 V

D

see fig. 6 and 13

b

-8.8-

V

= - 100 V, ID = - 3.9 A,

DD

R

= 18 Ω, RD= 24 Ω,

G

see fig. 10

b

D

G

S

D

G

S

b

-27-

-4.5-

-7.5-

--- 3.0

--- 12

--- 6.3V

- 150 300 ns

b

- 0.97 2.0 µC

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

µA

pFOutput Capacitance C

nC Gate-Source Charge Q

ns

nH

A

www.vishay.com Document Number: 91166
2 S09-0011-Rev. A, 19-Jan-09

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

IRFI9620G, SiHFI9620G

Vishay Siliconix

Fig. 1 - Typical Output Characteristics, TC = 25 °C

Fig. 2 - Typical Output Characteristics, T

= 150 °C

C

Fig. 3 - Typical Transfer Characteristics

Fig. 4 - Normalized On-Resistance vs. Temperature

Document Number: 91166 www.vishay.com
S09-0011-Rev. A, 19-Jan-09 3