Vishay IRFI9610G, SiHFI9610G Data Sheet

IRFI9610G, SiHFI9610G

Vishay Siliconix

Power MOSFET

PRODUCT SUMMARY

VDS (V)	- 200
RDS(on) (Ω)	VGS = - 10 V		3.0
Qg (Max.) (nC)	13
Qgs (nC)	3.2
Qgd (nC)	7.3
Configuration	Single

S

TO-220 FULLPAK

G

D

G D S

P-Channel MOSFET

FEATURES

•Isolated Package

•High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz)

•Sink to Lead Creepage Distance = 4.8 mm

•P-Channel

•Dynamic dV/dt Rating

•Low Thermal Resistance

•Lead (Pb)-free Available

DESCRIPTION

Available

RoHS*

COMPLIANT

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single screw fixing.

ORDERING INFORMATION

	Package	TO-220 FULLPAK
	Lead (Pb)-free	IRFI9640GPbF
		SiHFI9640G-E3
	SnPb	IRFI9640G
		SiHFI9640G

ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted

PARAMETER				SYMBOL	LIMIT	UNIT
Drain-Source Voltage				VDS	- 200	V
Gate-Source Voltage				VGS	± 20
Continuous Drain Current		VGS at - 10 V	TC = 25 °C	ID	- 2.0
			TC = 100 °C		- 1.3	A
Pulsed Drain Currenta				IDM	- 8.0
Linear Derating Factor					0.22	W/°C
Single Pulse Avalanche Energyb				EAS	100	mJ
Repetitive Avalanche Currenta				IAR	- 2.0	A
Repetitive Avalanche Energya				EAR	2.7	mJ
Maximum Power Dissipation		TC = 25 °C		PD	27	W
Peak Diode Recovery dV/dtc				dV/dt	- 11	V/ns
Operating Junction and Storage Temperature Range				TJ, Tstg	- 55 to + 150	°C
Soldering Recommendations (Peak Temperature)		for 10 s			300d
Mounting Torque		6-32 or M3 screw			10	lbf · in
					1.1	N · m

Notes

a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b.Starting TJ = 25 °C, L = 51 mH, RG = 25 Ω, IAS = - 2.0 A (see fig. 12).

c.ISD ≤ - 2.0 A, dI/dt ≤ - 250 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.

d.1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91165	www.vishay.com
S09-0011-Rev. A, 19-Jan-09	1

IRFI9610G, SiHFI9610G

Vishay Siliconix

THERMAL RESISTANCE RATINGS

	PARAMETER	SYMBOL	TYP.	MAX.	UNIT
	Maximum Junction-to-Ambient	RthJA	-	65	°C/W
	Maximum Junction-to-Case (Drain)	RthJC	-	4.6

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = - 250 µA

- 200

-

-

V

VDS Temperature Coefficient

VDS/TJ

Reference to 25 °C, ID = - 1 mA

-

- 0.22

-

V/°C

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = - 250 µA

- 2.0

-

- 4.0

V

Gate-Source Leakage

IGSS

VGS = ± 20 V

-

-

± 100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = - 200 V, VGS = 0 V

-

-

- 100

µA

VDS = - 160 V, VGS = 0 V, TJ = 125 °C

-

-

- 500

Drain-Source On-State Resistance

RDS(on)

VGS = - 10 V

ID = - 1.2 Ab

-

-

3.0

Ω

Forward Transconductance

g

fs

V

DS

= - 50 V, I = - 1.2 Ab

0.7

-

-

S

D

Dynamic

Input Capacitance

Ciss

VGS = 0 V,

-

180

-

Output Capacitance

Coss

VDS = - 25 V,

-

66

-

pF

f = 1.0 MHz, see fig. 5

Reverse Transfer Capacitance

Crss

-

12

-

Total Gate Charge

Qg

ID = - 2.0 A, VDS = - 160 V,

-

-

13

Gate-Source Charge

Qgs

VGS = - 10 V

-

-

3.2

nC

see fig. 6 and 13b

Gate-Drain Charge

Qgd

-

-

7.3

Turn-On Delay Time

td(on)

-

12

-

Rise Time

tr

VDD = - 100 V, ID = - 2.0 A,

-

17

-

RG = 24 Ω, VGS = - 10 V,

ns

Turn-Off Delay Time

td(off)

-

19

-

see fig. 10b

Fall Time

tf

-

15

-

Internal Drain Inductance

LD

Between lead,

D

-

4.5

-

6 mm (0.25") from

nH

package and center of

G

Internal Source Inductance

LS

die contact

S

-

7.5

-

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

IS

MOSFET symbol

D

-

-

- 2.0

showing the

A

Pulsed Diode Forward Currenta

integral reverse

G

ISM

p - n junction diode

S

-

-

- 8.0

Body Diode Voltage

V

T

J

= 25 °C, I = - 2.0 A, V

GS

= 0 Vb

-

-

- 5.8

V

SD

S

Body Diode Reverse Recovery Time

trr

T = 25 °C, I = - 2.0 A, dI/dt = 100 A/µsb

-

130

200

ns

Body Diode Reverse Recovery Charge

Qrr

J

F

-

700

1050

µC

Forward Turn-On Time

ton

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes

a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b.Pulse width ≤ 300 µs; duty cycle ≤ 2 %.

www.vishay.com	Document Number: 91165
2	S09-0011-Rev. A, 19-Jan-09

IRFI9610G, SiHFI9610G

Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

	10	VGS
	TOP	-15V
		-10V
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		-7.0V
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		-5.5V
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	1	-5.0V
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	BOTTOM -4.5V
<![if ! IE]> <![endif]>uecr			-4.5V
<![if ! IE]> <![endif]>oS-
<![if ! IE]> <![endif]>ot-ni	0.1
<![if ! IE]> <![endif]>Dar
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<![if ! IE]> <![endif]>D
<![if ! IE]> <![endif]>I-			20µs PULSE WIDTH
	0.01		Tj = 25°C
	0.1	1	10	100

		-VDS, Drain-to-Source Voltage (V)
	Fig. 1 - Typical Output Characteristics, TC = 25 °C
	10	VGS
	TOP	-15V
		-10V
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		-7.0V
		-6.0V
<![if ! IE]> <![endif]>n		-5.5V
<![if ! IE]> <![endif]>err
	1	-5.0V
<![if ! IE]> <![endif]>uC
	BOTTOM -4.5V
<![if ! IE]> <![endif]>ecur			-4.5V
<![if ! IE]> <![endif]>oS-
<![if ! IE]> <![endif]>ont-i	0.1
<![if ! IE]> <![endif]>Dar
<![if ! IE]> <![endif]>,
<![if ! IE]> <![endif]>D
<![if ! IE]> <![endif]>I-			20µs PULSE WIDTH
	0.01		Tj = 150°C
	0.1	1	10	100

-VDS, Drain-to-Source Voltage (V)

Fig. 2 - Typical Output Characteristics, TC = 150 °C

10
<![if ! IE]> <![endif]>Α()				TJ = 25°C
<![if ! IE]> <![endif]>nt					TJ	= 150°C
<![if ! IE]> <![endif]>err
<![if ! IE]> <![endif]>uC
<![if ! IE]> <![endif]>ecur
1
<![if ! IE]> <![endif]>oS-
<![if ! IE]> <![endif]>ot-
<![if ! IE]> <![endif]>Dnair
<![if ! IE]> <![endif]>,
<![if ! IE]> <![endif]>D
<![if ! IE]> <![endif]>I-				VDS = -50V
0				20µs PULSE WIDTH
4.0	5.0	6.0	7.0	8.0	9.0	10.0	11.0

-VGS, Gate-to-Source Voltage (V)

Fig. 3 - Typical Transfer Characteristics

	2.5
<![if ! IE]> <![endif]>ec	ID = -2.0A
<![if ! IE]> <![endif]>nat	VGS = -10V
<![if ! IE]> <![endif]>ssi	2.0
<![if ! IE]> <![endif]>eR
<![if ! IE]> <![endif]>On
<![if ! IE]> <![endif]>eucr oSont- Dair	1.5
	<![if ! IE]> <![endif]>dezla)i mroN (
<![if ! IE]> <![endif]>,	1.0
<![if ! IE]> <![endif]>)no D(S
<![if ! IE]> <![endif]>R	0.5
	-60	-40 -20	0	20	40	60	80	100 120 140 160

TJ , Junction Temperature (°C)

Fig. 4 - Normalized On-Resistance vs. Temperature

Document Number: 91165	www.vishay.com
S09-0011-Rev. A, 19-Jan-09	3