Vishay IRFI9540G, SiHFI9540G Data Sheet

IRFI9540G, SiHFI9540G

Vishay Siliconix

Power MOSFET

PRODUCT SUMMARY

VDS (V)	- 100
RDS(on) (Ω)	VGS = - 10 V		0.20
Qg (Max.) (nC)	61
Qgs (nC)	14
Qgd (nC)	29
Configuration	Single

S

TO-220 FULLPAK

G

D

G D S P-Channel MOSFET

FEATURES

•Isolated Package

•High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz)

•Sink to Lead Creepage Dist. = 4.8 mm

•P-Channel

•175 °C Operating Temperature

•Dynamic dV/dt

•Low Thermal Resistance

•Lead (Pb)-free Available

DESCRIPTION

Available

RoHS*

COMPLIANT

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single screw fixing.

ORDERING INFORMATION
Package				TO-220 FULLPAK
Lead (Pb)-free				IRFI9540GPbF
				SiHFI9540G-E3
SnPb				IRFI9540G
				SiHFI9540G
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER						SYMBOL	LIMIT	UNIT
Drain-Source Voltage						VDS	- 100	V
Gate-Source Voltage						VGS	± 20
Continuous Drain Current		VGS at - 10 V		TC = 25 °C		ID	- 11
				TC = 100 °C			- 7.6	A
Pulsed Drain Currenta						IDM	- 44
Linear Derating Factor							0.32	W/°C
Single Pulse Avalanche Energyb						EAS	600	mJ
Repetitive Avalanche Currenta						IAR	- 11	A
Repetitive Avalanche Energya						EAR	4.8	mJ
Maximum Power Dissipation		TC = 25 °C				PD	48	W
Peak Diode Recovery dV/dtc						dV/dt	- 5.5	V/ns
Operating Junction and Storage Temperature Range						TJ, Tstg	- 55 to + 175	°C
Soldering Recommendations (Peak Temperature)		for 10 s					300d
Mounting Torque		6-32 or M3 screw					10	lbf · in
							1.1	N · m

Notes

a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b.VDD = - 25 V, starting TJ = 25 °C, L = 7.4 mH, RG = 25 Ω, IAS = - 11 A (see fig. 12).

c.ISD ≤ - 19 A, dI/dt ≤ 170 A/µs, VDD ≤ VDS, TJ ≤ 175 °C.

d.1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91164	www.vishay.com
S09-0011-Rev. A, 19-Jan-09	1

IRFI9540G, SiHFI9540G

Vishay Siliconix

THERMAL RESISTANCE RATINGS

	PARAMETER	SYMBOL	TYP.	MAX.	UNIT
	Maximum Junction-to-Ambient	RthJA	-	65	°C/W
	Maximum Junction-to-Case (Drain)	RthJC	-	3.1

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = - 250 µA

- 100

-

-

V

VDS Temperature Coefficient

VDS/TJ

Reference to 25 °C, ID = - 1 mA

-

- 0.087

-

V/°C

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = - 250 µA

- 2.0

-

- 4.0

V

Gate-Source Leakage

IGSS

VGS = ± 20 V

-

-

± 100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = - 100 V, VGS = 0 V

-

-

- 100

µA

VDS = - 80 V, VGS = 0 V, TJ = 150 °C

-

-

- 500

Drain-Source On-State Resistance

RDS(on)

VGS = - 10 V

ID = - 6.6 Ab

-

-

0.20

Ω

Forward Transconductance

g

fs

V

DS

= - 50 V, I = - 6.6 Ab

5.4

-

-

S

D

Dynamic

Input Capacitance

Ciss

VGS = 0 V,

-

1400

-

Output Capacitance

Coss

VDS = - 25 V,

-

590

-

pF

f = 1.0 MHz, see fig. 5

Reverse Transfer Capacitance

Crss

-

140

-

Drain to Sink Capacitance

C

f = 1 MHz

-

12

-

Total Gate Charge

Qg

ID = - 19 A, VDS = - 80 V,

-

-

61

Gate-Source Charge

Qgs

VGS = - 10 V

-

-

14

nC

see fig. 6 and 13b

Gate-Drain Charge

Qgd

-

-

29

Turn-On Delay Time

td(on)

-

24

-

Rise Time

tr

VDD = - 50 V, ID = - 19 A,

-

110

-

RG = 9.1 Ω, RD= 7.4 Ω,

ns

Turn-Off Delay Time

td(off)

-

51

-

see fig. 10b

Fall Time

tf

-

86

-

Internal Drain Inductance

LD

Between lead,

D

-

4.5

-

6 mm (0.25") from

nH

package and center of

G

Internal Source Inductance

LS

die contact

S

-

7.5

-

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

IS

MOSFET symbol

D

-

-

- 11

showing the

A

Pulsed Diode Forward Currenta

integral reverse

G

ISM

p - n junction diode

S

-

-

- 44

Body Diode Voltage

V

T

= 25 °C, I

S

= - 11 A, V

= 0 Vb

-

-

- 4.2

V

SD

J

GS

Body Diode Reverse Recovery Time

trr

TJ = 25 °C, IF = - 19 A, dI/dt = 100 A/µsb

-

130

260

ns

Body Diode Reverse Recovery Charge

Qrr

-

0.35

0.70

µC

Forward Turn-On Time

ton

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes

a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b.Pulse width ≤ 300 µs; duty cycle ≤ 2 %.

www.vishay.com	Document Number: 91164
2	S09-0011-Rev. A, 19-Jan-09

IRFI9540G, SiHFI9540G

Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Fig. 1 - Typical Output Characteristics, TC = 25 °C		Fig. 3 - Typical Transfer Characteristics

Fig. 2 - Typical Output Characteristics, TC = 175 °C

Fig. 4 - Normalized On-Resistance vs. Temperature

Document Number: 91164	www.vishay.com
S09-0011-Rev. A, 19-Jan-09	3