Vishay IRFI840GLC, SiHFI840GLC Data Sheet

IRFI840GLC, SiHFI840GLC

Vishay Siliconix

Power MOSFET

PRODUCT SUMMARY

VDS (V)	500
RDS(on) (Ω)	VGS = 10 V	0.85
Qg (Max.) (nC)	39
Qgs (nC)	10
Qgd (nC)	19
Configuration	Single
TO-220 FULLPAK		D
	G
G D S		S

N-Channel MOSFET

FEATURES

• Ultra Low Gate Charge

• Reduced Gate Drive Requirement		Available
•	Enhanced 30 V VGS Rating	RoHS*
•	Isolated Package	COMPLIANT

•High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz)

•Sink to Lead Creepage Distance = 4.8 mm

•Repetitve Avalanche Rated

•Lead (Pb)-free Available

DESCRIPTION

This new series of low charge Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced Power MOSFET technology, the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. These device improvements combined with the proven ruggedness and reliability that are characteristic of MOSFETs offer the designer a new standard in power transistors for switching applications.

The TO-220 FULLPAK eliminates the need for additional insulating hardware. The molding compound used provides a high isolation capability and low thermal resistance between the tab and external heatsink.

ORDERING INFORMATION

	Package	TO-220 FULLPAK
	Lead (Pb)-free	IRFI840GLCPbF
		SiHFI840GLC-E3
	SnPb	IRFI840GLC
		SiHFI840GLC

ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted

PARAMETER				SYMBOL	LIMIT	UNIT
Drain-Source Voltage				VDS	500	V
Gate-Source Voltage				VGS	± 30
Continuous Drain Current		VGS at 10 V	TC = 25 °C	ID	4.5
			TC = 100 °C		2.9	A
Pulsed Drain Currenta				IDM	18
Linear Derating Factor					0.32	W/°C
Single Pulse Avalanche Energyb				EAS	300	mJ
Repetitive Avalanche Currenta				IAR	4.5	A
Repetitive Avalanche Energya				EAR	4.0	mJ
Maximum Power Dissipation		TC = 25 °C		PD	40	W
Peak Diode Recovery dV/dtc				dV/dt	3.5	V/ns
Operating Junction and Storage Temperature Range				TJ, Tstg	- 55 to + 150	°C
Soldering Recommendations (Peak Temperature)		for 10 s			300d
Mounting Torque		6-32 or M3 screw			10	lbf · in
					1.1	N · m

Notes

a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b.VDD = 50 V, starting TJ = 25 °C, L = 26 mH, RG = 25 Ω, IAS = 4.5 A (see fig. 12).

c.ISD ≤ 8.0 A, dI/dt ≤ 100 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.

d.1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91160	www.vishay.com
S-81292-Rev. A, 16-Jun-08	1

IRFI840GLC, SiHFI840GLC

Vishay Siliconix

THERMAL RESISTANCE RATINGS

	PARAMETER	SYMBOL	TYP.	MAX.	UNIT
	Maximum Junction-to-Ambient	RthJA	-	65	°C/W
	Maximum Junction-to-Case (Drain)	RthJC	-	3.1

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = 250 µA

500

-

-

V

VDS Temperature Coefficient

VDS/TJ

Reference to 25 °C, ID = 1 mA

-

0.63

-

V/°C

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 µA

2.0

-

4.0

V

Gate-Source Leakage

IGSS

VGS = ± 20 V

-

-

± 100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = 500 V, VGS = 0 V

-

-

25

µA

VDS = 400 V, VGS = 0 V, TJ = 125 °C

-

-

250

Drain-Source On-State Resistance

RDS(on)

VGS = 10 V

ID = 2.7 Ab

-

-

0.85

mΩ

Forward Transconductance

gfs

VDS = 50 V, ID = 4.8 Ab

4.0

-

-

S

Dynamic

Input Capacitance

Ciss

VGS = 0 V,

-

1100

-

Output Capacitance

Coss

VDS = 25 V,

-

170

-

pF

f = 1.0 MHz, see fig. 5

Reverse Transfer Capacitance

Crss

-

18

-

Drain to Sink Capacitance

C

f = 1.0 MHz

-

12

-

Total Gate Charge

Qg

-

-

39

ID = 8.0 A, VDS = 400 V

Gate-Source Charge

Qgs

VGS = 10 V

-

-

10

nC

see fig. 6 and 13b

Gate-Drain Charge

Qgd

-

-

19

Turn-On Delay Time

td(on)

-

12

-

Rise Time

tr

VDD

= 250 V, ID = 8.0 A,

-

25

-

RG = 9.1Ω, RrD= 30

Ω, VGS = 10 V,

ns

Turn-Off Delay Time

td(off)

-

27

-

see fig. 10b

Fall Time

tf

-

19

-

Internal Drain Inductance

LD

Between lead,

D

-

4.5

-

6 mm (0.25") from

nH

package and center of

G

Internal Source Inductance

LS

die contact

-

7.5

-

S

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

IS

MOSFET symbol

D

-

-

4.5

showing the

A

Pulsed Diode Forward Currenta

ISM

integral reverse

G

-

-

18

p - n junction diode

S

Body Diode Voltage

V

T

J

= 25 °C, I = 4.5 A, V

GS

= 0 Vb

-

-

2.0

V

SD

S

Body Diode Reverse Recovery Time

trr

T

= 25 °C, I = 8.0 A, dI/dt = 100 A/µsb

-

490

740

ns

J

Body Diode Reverse Recovery Charge

Qrr

F

-

3.0

4.5

µC

Forward Turn-On Time

ton

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes

a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b.Pulse width ≤ 300 µs; duty cycle ≤ 2 %.

www.vishay.com	Document Number: 91160
2	S-81292-Rev. A, 16-Jun-08

IRFI840GLC, SiHFI840GLC

Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Fig. 1 - Typical Output Characteristics, TC = 25 °C	Fig. 3 - Typical Transfer Characteristics

Fig. 2 - Typical Output Characteristics, TC = 150 °C	Fig. 4 - Normalized On-Resistance vs. Temperature

Document Number: 91160	www.vishay.com
S-81292-Rev. A, 16-Jun-08	3