IRFI840GLC, SiHFI840GLC
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) |
500 |
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RDS(on) (Ω) |
VGS = 10 V |
0.85 |
Qg (Max.) (nC) |
39 |
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Qgs (nC) |
10 |
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Qgd (nC) |
19 |
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Configuration |
Single |
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TO-220 FULLPAK |
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D |
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G |
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G D S |
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S |
N-Channel MOSFET
FEATURES
• Ultra Low Gate Charge
• Reduced Gate Drive Requirement |
Available |
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• |
Enhanced 30 V VGS Rating |
RoHS* |
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Isolated Package |
COMPLIANT |
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•High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz)
•Sink to Lead Creepage Distance = 4.8 mm
•Repetitve Avalanche Rated
•Lead (Pb)-free Available
DESCRIPTION
This new series of low charge Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced Power MOSFET technology, the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. These device improvements combined with the proven ruggedness and reliability that are characteristic of MOSFETs offer the designer a new standard in power transistors for switching applications.
The TO-220 FULLPAK eliminates the need for additional insulating hardware. The molding compound used provides a high isolation capability and low thermal resistance between the tab and external heatsink.
ORDERING INFORMATION
Package |
TO-220 FULLPAK |
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Lead (Pb)-free |
IRFI840GLCPbF |
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SiHFI840GLC-E3 |
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SnPb |
IRFI840GLC |
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SiHFI840GLC |
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ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER |
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SYMBOL |
LIMIT |
UNIT |
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Drain-Source Voltage |
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VDS |
500 |
V |
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Gate-Source Voltage |
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VGS |
± 30 |
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Continuous Drain Current |
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VGS at 10 V |
TC = 25 °C |
ID |
4.5 |
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TC = 100 °C |
2.9 |
A |
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Pulsed Drain Currenta |
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IDM |
18 |
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Linear Derating Factor |
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0.32 |
W/°C |
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Single Pulse Avalanche Energyb |
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EAS |
300 |
mJ |
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Repetitive Avalanche Currenta |
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IAR |
4.5 |
A |
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Repetitive Avalanche Energya |
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EAR |
4.0 |
mJ |
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Maximum Power Dissipation |
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TC = 25 °C |
PD |
40 |
W |
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Peak Diode Recovery dV/dtc |
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dV/dt |
3.5 |
V/ns |
Operating Junction and Storage Temperature Range |
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TJ, Tstg |
- 55 to + 150 |
°C |
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Soldering Recommendations (Peak Temperature) |
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for 10 s |
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300d |
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Mounting Torque |
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6-32 or M3 screw |
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10 |
lbf · in |
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1.1 |
N · m |
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Notes
a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b.VDD = 50 V, starting TJ = 25 °C, L = 26 mH, RG = 25 Ω, IAS = 4.5 A (see fig. 12).
c.ISD ≤ 8.0 A, dI/dt ≤ 100 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.
d.1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91160 |
www.vishay.com |
S-81292-Rev. A, 16-Jun-08 |
1 |
IRFI840GLC, SiHFI840GLC
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER |
SYMBOL |
TYP. |
MAX. |
UNIT |
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Maximum Junction-to-Ambient |
RthJA |
- |
65 |
°C/W |
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Maximum Junction-to-Case (Drain) |
RthJC |
- |
3.1 |
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SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER |
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SYMBOL |
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TEST CONDITIONS |
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MIN. |
TYP. |
MAX. |
UNIT |
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Static |
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Drain-Source Breakdown Voltage |
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VDS |
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VGS = 0 V, ID = 250 µA |
500 |
- |
- |
V |
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VDS Temperature Coefficient |
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VDS/TJ |
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Reference to 25 °C, ID = 1 mA |
- |
0.63 |
- |
V/°C |
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Gate-Source Threshold Voltage |
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VGS(th) |
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VDS = VGS, ID = 250 µA |
2.0 |
- |
4.0 |
V |
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Gate-Source Leakage |
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IGSS |
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VGS = ± 20 V |
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- |
- |
± 100 |
nA |
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Zero Gate Voltage Drain Current |
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IDSS |
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VDS = 500 V, VGS = 0 V |
- |
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25 |
µA |
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VDS = 400 V, VGS = 0 V, TJ = 125 °C |
- |
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250 |
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Drain-Source On-State Resistance |
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RDS(on) |
VGS = 10 V |
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ID = 2.7 Ab |
- |
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0.85 |
mΩ |
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Forward Transconductance |
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gfs |
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VDS = 50 V, ID = 4.8 Ab |
4.0 |
- |
- |
S |
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Dynamic |
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Input Capacitance |
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Ciss |
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VGS = 0 V, |
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- |
1100 |
- |
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Output Capacitance |
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Coss |
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VDS = 25 V, |
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170 |
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pF |
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f = 1.0 MHz, see fig. 5 |
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Reverse Transfer Capacitance |
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Crss |
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- |
18 |
- |
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Drain to Sink Capacitance |
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C |
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f = 1.0 MHz |
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- |
12 |
- |
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Total Gate Charge |
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Qg |
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- |
- |
39 |
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ID = 8.0 A, VDS = 400 V |
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Gate-Source Charge |
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Qgs |
VGS = 10 V |
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- |
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10 |
nC |
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see fig. 6 and 13b |
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Gate-Drain Charge |
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Qgd |
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- |
- |
19 |
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Turn-On Delay Time |
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td(on) |
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12 |
- |
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Rise Time |
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tr |
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VDD |
= 250 V, ID = 8.0 A, |
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25 |
- |
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RG = 9.1Ω, RrD= 30 |
Ω, VGS = 10 V, |
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ns |
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Turn-Off Delay Time |
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td(off) |
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- |
27 |
- |
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see fig. 10b |
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Fall Time |
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tf |
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19 |
- |
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Internal Drain Inductance |
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LD |
Between lead, |
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D |
- |
4.5 |
- |
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6 mm (0.25") from |
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nH |
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package and center of |
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G |
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Internal Source Inductance |
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LS |
die contact |
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- |
7.5 |
- |
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S |
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Drain-Source Body Diode Characteristics |
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Continuous Source-Drain Diode Current |
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IS |
MOSFET symbol |
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D |
- |
- |
4.5 |
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showing the |
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A |
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Pulsed Diode Forward Currenta |
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ISM |
integral reverse |
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G |
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- |
- |
18 |
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p - n junction diode |
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S |
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Body Diode Voltage |
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V |
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T |
J |
= 25 °C, I = 4.5 A, V |
GS |
= 0 Vb |
- |
- |
2.0 |
V |
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SD |
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S |
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Body Diode Reverse Recovery Time |
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trr |
T |
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= 25 °C, I = 8.0 A, dI/dt = 100 A/µsb |
- |
490 |
740 |
ns |
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J |
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Body Diode Reverse Recovery Charge |
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Qrr |
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F |
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- |
3.0 |
4.5 |
µC |
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Forward Turn-On Time |
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ton |
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Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) |
Notes
a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b.Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
www.vishay.com |
Document Number: 91160 |
2 |
S-81292-Rev. A, 16-Jun-08 |
IRFI840GLC, SiHFI840GLC
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Fig. 1 - Typical Output Characteristics, TC = 25 °C |
Fig. 3 - Typical Transfer Characteristics |
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Fig. 2 - Typical Output Characteristics, TC = 150 °C |
Fig. 4 - Normalized On-Resistance vs. Temperature |
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Document Number: 91160 |
www.vishay.com |
S-81292-Rev. A, 16-Jun-08 |
3 |