IRFI840G, SiHFI840G
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) |
500 |
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RDS(on) (Ω) |
VGS = 10 V |
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0.85 |
Qg (Max.) (nC) |
67 |
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Qgs (nC) |
10 |
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Qgd (nC) |
34 |
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Configuration |
Single |
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D
TO-220 FULLPAK
G
S
G D S
N-Channel MOSFET
FEATURES
•Isolated Package
•High Voltage Isolation = 2.5 kVRMS (t = 60 s, f = 60 Hz)
•Sink to Lead Creepage Distance = 4.8 mm
•Dynamic dV/dt Rating
•Low Thermal Resistance
•Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. The isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single screw fixing.
ORDERING INFORMATION
Package |
TO-220 FULLPAK |
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Lead (Pb)-free |
IRFI840GPbF |
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SiHFI840G-E3 |
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SnPb |
IRFI840G |
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SiHFI840G |
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ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER |
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SYMBOL |
LIMIT |
UNIT |
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Drain-Source Voltage |
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VDS |
500 |
V |
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Gate-Source Voltage |
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VGS |
± 20 |
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Continuous Drain Current |
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VGS at 10 V |
TC = 25 °C |
ID |
4.6 |
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TC = 100 °C |
2.9 |
A |
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Pulsed Drain Currenta |
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IDM |
18 |
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Linear Derating Factor |
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0.32 |
W/°C |
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Single Pulse Avalanche Energyb |
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EAS |
370 |
mJ |
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Repetitive Avalanche Currenta |
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IAR |
4.6 |
A |
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Repetitive Avalanche Energya |
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EAR |
4.0 |
mJ |
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Maximum Power Dissipation |
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TC = 25 °C |
PD |
40 |
W |
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Peak Diode Recovery dV/dtc |
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dV/dt |
3.5 |
V/ns |
Operating Junction and Storage Temperature Range |
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TJ, Tstg |
- 55 to + 150 |
°C |
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Soldering Recommendations (Peak Temperature) |
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for 10 s |
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300d |
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Mounting Torque |
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6-32 or M3 screw |
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10 |
lbf · in |
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1.1 |
N · m |
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Notes
a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b.VDD = 50 V, starting TJ = 25 °C, L = 31 mH, RG = 25 Ω, IAS = 4.6 A (see fig. 12).
c.ISD ≤ 8.0 A, dI/dt ≤ 100 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.
d.1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91161 |
www.vishay.com |
S09-0011-Rev. A, 19-Jan-09 |
1 |
IRFI840G, SiHFI840G
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER |
SYMBOL |
TYP. |
MAX. |
UNIT |
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Maximum Junction-to-Ambient |
RthJA |
- |
65 |
°C/W |
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Maximum Junction-to-Case (Drain) |
RthJC |
- |
3.1 |
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SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER |
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SYMBOL |
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TEST CONDITIONS |
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MIN. |
TYP. |
MAX. |
UNIT |
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Static |
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Drain-Source Breakdown Voltage |
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VDS |
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VGS = 0 V, ID = 250 µA |
500 |
- |
- |
V |
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VDS Temperature Coefficient |
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VDS/TJ |
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Reference to 25 °C, ID = 1 mA |
- |
0.78 |
- |
V/°C |
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Gate-Source Threshold Voltage |
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VGS(th) |
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VDS = VGS, ID = 250 µA |
2.0 |
- |
4.0 |
V |
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Gate-Source Leakage |
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IGSS |
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VGS = ± 20 V |
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- |
- |
± 100 |
nA |
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Zero Gate Voltage Drain Current |
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IDSS |
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VDS = 500 V, VGS = 0 V |
- |
- |
25 |
µA |
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VDS = 400 V, VGS = 0 V, TJ = 125 °C |
- |
- |
250 |
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Drain-Source On-State Resistance |
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RDS(on) |
VGS = 10 V |
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ID = 2.8 Ab |
- |
- |
0.85 |
Ω |
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Forward Transconductance |
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gfs |
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VDS = 50 V, ID = 2.8 Ab |
3.7 |
- |
- |
S |
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Dynamic |
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Input Capacitance |
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Ciss |
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VGS = 0 V, |
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- |
1300 |
- |
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Output Capacitance |
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Coss |
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VDS = 25 V, |
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- |
200 |
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pF |
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f = 1.0 MHz, see fig. 5 |
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Reverse Transfer Capacitance |
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Crss |
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- |
39 |
- |
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Drain to Sink Capacitance |
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C |
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f = 1.0 MHz |
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- |
12 |
- |
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Total Gate Charge |
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Qg |
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- |
- |
67 |
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ID = 8.0 A, VDS = 400 V, |
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Gate-Source Charge |
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Qgs |
VGS = 10 V |
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- |
- |
10 |
nC |
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see fig. 6 and 13b |
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Gate-Drain Charge |
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Qgd |
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- |
- |
34 |
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Turn-On Delay Time |
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td(on) |
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- |
14 |
- |
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Rise Time |
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tr |
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VDD = 250 V, ID = 8.0 A, |
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22 |
- |
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RG = 9.1Ω, RD= 31 Ω, |
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ns |
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Turn-Off Delay Time |
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td(off) |
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- |
55 |
- |
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see fig. 10b |
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Fall Time |
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tf |
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- |
21 |
- |
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Internal Drain Inductance |
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LD |
Between lead, |
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D |
- |
4.5 |
- |
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6 mm (0.25") from |
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nH |
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package and center of |
G |
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Internal Source Inductance |
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LS |
die contact |
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- |
7.5 |
- |
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S |
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Drain-Source Body Diode Characteristics |
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Continuous Source-Drain Diode Current |
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IS |
MOSFET symbol |
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D |
- |
- |
4.6 |
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showing the |
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A |
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integral reverse |
G |
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Pulsed Diode Forward Currenta |
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ISM |
p - n junction diode |
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- |
- |
18 |
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S |
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Body Diode Voltage |
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V |
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T |
J |
= 25 °C, I = 4.6 A, V |
GS |
= 0 Vb |
- |
- |
2.0 |
V |
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SD |
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S |
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Body Diode Reverse Recovery Time |
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trr |
T |
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= 25 °C, I |
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= 8.0 A, dI/dt = 100 A/µsb |
- |
340 |
680 |
ns |
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J |
F |
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Body Diode Reverse Recovery Charge |
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Qrr |
- |
1.8 |
2.6 |
µC |
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Forward Turn-On Time |
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ton |
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Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) |
Notes
a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b.Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
www.vishay.com |
Document Number: 91161 |
2 |
S09-0011-Rev. A, 19-Jan-09 |
IRFI840G, SiHFI840G
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Fig. 1 - Typical Output Characteristics, TC = 25 °C |
Fig. 3 - Typical Transfer Characteristics |
Fig. 2 - Typical Output Characteristics, TC= 150 °C |
Fig. 4 - Normalized On-Resistance vs. Temperature |
Document Number: 91161 |
www.vishay.com |
S09-0011-Rev. A, 19-Jan-09 |
3 |