Vishay IRFI840G, SiHFI840G Data Sheet

IRFI840G, SiHFI840G

Vishay Siliconix

Power MOSFET

PRODUCT SUMMARY

VDS (V)	500
RDS(on) (Ω)	VGS = 10 V		0.85
Qg (Max.) (nC)	67
Qgs (nC)	10
Qgd (nC)	34
Configuration	Single

D

TO-220 FULLPAK

G

S

G D S

N-Channel MOSFET

FEATURES

•Isolated Package

•High Voltage Isolation = 2.5 kVRMS (t = 60 s, f = 60 Hz)

•Sink to Lead Creepage Distance = 4.8 mm

•Dynamic dV/dt Rating

•Low Thermal Resistance

•Lead (Pb)-free Available

Available

RoHS*

COMPLIANT

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. The isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single screw fixing.

ORDERING INFORMATION

	Package	TO-220 FULLPAK
	Lead (Pb)-free	IRFI840GPbF
		SiHFI840G-E3
	SnPb	IRFI840G
		SiHFI840G

ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted

PARAMETER				SYMBOL	LIMIT	UNIT
Drain-Source Voltage				VDS	500	V
Gate-Source Voltage				VGS	± 20
Continuous Drain Current		VGS at 10 V	TC = 25 °C	ID	4.6
			TC = 100 °C		2.9	A
Pulsed Drain Currenta				IDM	18
Linear Derating Factor					0.32	W/°C
Single Pulse Avalanche Energyb				EAS	370	mJ
Repetitive Avalanche Currenta				IAR	4.6	A
Repetitive Avalanche Energya				EAR	4.0	mJ
Maximum Power Dissipation		TC = 25 °C		PD	40	W
Peak Diode Recovery dV/dtc				dV/dt	3.5	V/ns
Operating Junction and Storage Temperature Range				TJ, Tstg	- 55 to + 150	°C
Soldering Recommendations (Peak Temperature)		for 10 s			300d
Mounting Torque		6-32 or M3 screw			10	lbf · in
					1.1	N · m

Notes

a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b.VDD = 50 V, starting TJ = 25 °C, L = 31 mH, RG = 25 Ω, IAS = 4.6 A (see fig. 12).

c.ISD ≤ 8.0 A, dI/dt ≤ 100 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.

d.1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91161	www.vishay.com
S09-0011-Rev. A, 19-Jan-09	1

IRFI840G, SiHFI840G

Vishay Siliconix

THERMAL RESISTANCE RATINGS

	PARAMETER	SYMBOL	TYP.	MAX.	UNIT
	Maximum Junction-to-Ambient	RthJA	-	65	°C/W
	Maximum Junction-to-Case (Drain)	RthJC	-	3.1

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = 250 µA

500

-

-

V

VDS Temperature Coefficient

VDS/TJ

Reference to 25 °C, ID = 1 mA

-

0.78

-

V/°C

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 µA

2.0

-

4.0

V

Gate-Source Leakage

IGSS

VGS = ± 20 V

-

-

± 100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = 500 V, VGS = 0 V

-

-

25

µA

VDS = 400 V, VGS = 0 V, TJ = 125 °C

-

-

250

Drain-Source On-State Resistance

RDS(on)

VGS = 10 V

ID = 2.8 Ab

-

-

0.85

Ω

Forward Transconductance

gfs

VDS = 50 V, ID = 2.8 Ab

3.7

-

-

S

Dynamic

Input Capacitance

Ciss

VGS = 0 V,

-

1300

-

Output Capacitance

Coss

VDS = 25 V,

-

200

-

pF

f = 1.0 MHz, see fig. 5

Reverse Transfer Capacitance

Crss

-

39

-

Drain to Sink Capacitance

C

f = 1.0 MHz

-

12

-

Total Gate Charge

Qg

-

-

67

ID = 8.0 A, VDS = 400 V,

Gate-Source Charge

Qgs

VGS = 10 V

-

-

10

nC

see fig. 6 and 13b

Gate-Drain Charge

Qgd

-

-

34

Turn-On Delay Time

td(on)

-

14

-

Rise Time

tr

VDD = 250 V, ID = 8.0 A,

-

22

-

RG = 9.1Ω, RD= 31 Ω,

ns

Turn-Off Delay Time

td(off)

-

55

-

see fig. 10b

Fall Time

tf

-

21

-

Internal Drain Inductance

LD

Between lead,

D

-

4.5

-

6 mm (0.25") from

nH

package and center of

G

Internal Source Inductance

LS

die contact

-

7.5

-

S

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

IS

MOSFET symbol

D

-

-

4.6

showing the

A

integral reverse

G

Pulsed Diode Forward Currenta

ISM

p - n junction diode

-

-

18

S

Body Diode Voltage

V

T

J

= 25 °C, I = 4.6 A, V

GS

= 0 Vb

-

-

2.0

V

SD

S

Body Diode Reverse Recovery Time

trr

T

= 25 °C, I

= 8.0 A, dI/dt = 100 A/µsb

-

340

680

ns

J

F

Body Diode Reverse Recovery Charge

Qrr

-

1.8

2.6

µC

Forward Turn-On Time

ton

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes

a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b.Pulse width ≤ 300 µs; duty cycle ≤ 2 %.

www.vishay.com	Document Number: 91161
2	S09-0011-Rev. A, 19-Jan-09

IRFI840G, SiHFI840G

Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Fig. 1 - Typical Output Characteristics, TC = 25 °C

Fig. 3 - Typical Transfer Characteristics

Fig. 2 - Typical Output Characteristics, TC= 150 °C

Fig. 4 - Normalized On-Resistance vs. Temperature

Document Number: 91161	www.vishay.com
S09-0011-Rev. A, 19-Jan-09	3