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IRFI740GPBF
Datasheet
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VISHAY IRFI740GPBF Datasheet

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S
D
G
TO-220 FULLPAK
IRFI740G, SiHFI740G
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) 400
R
()V
DS(on)
Q
max. (nC) 66
g
Q
(nC) 10
gs
Q
(nC) 33
gd
Configuration Single
= 10 V 0.55
GS
D
FEATURES
• Isolated package
• High voltage isolation = 2.5 kV f = 60 Hz)
• Sink to lead creepage distance = 4.8 mm
• Dynamic dV/dt rating
• Low thermal resistance
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
Note
*
Thi s datasheet pro vi des information about parts that are RoHS-compliant and / or parts that are non-RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details.
G
DESCRIPTION
Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching,
S
N-Channel MOSFET
ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. The isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single screw fixing.
ORDERING INFORMATION
Package TO-220 FULLPAK
Lead (Pb)-free
SnPb
IRFI740GPbF SiHFI740G-E3 IRFI740G SiHFI740G
(t = 60 s;
RMS
Available
Available
  
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. V c. I d. 1.6 mm from case.
S16-0763-Rev. C, 02-May-16
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate-Source Voltage V
T
= 25 °C
Continuous Drain Current V
Pulsed Drain Current
a
at 10 V
GS
C
= 100 °C 3.4
C
DS
± 20
GS
I
D
IDM 22
Linear Derating Factor 0.32 W/°C
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation T
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range T
Soldering Recommendations (Peak temperature)
b
a
a
= 25 °C P
c
d
C
for 10 s 300
E
AS
I
AR
E
AR
D
dV/dt 4.0 V/ns
, T
J
stg
Mounting Torque 6-32 or M3 screw
= 50 V, starting TJ = 25 °C, L = 23 mH, Rg = 25 , IAS = 5.4 A (see fig. 12).
DD
10 A, dI/dt 120 A/μs, VDD VDS, TJ 150 °C.
SD
1
For technical questions, contact: hvm@vishay.com
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
400
5.4
390 mJ
5.4 A
4.0 mJ
40 W
-55 to +150
10 lbf · in
1.1 N · m
Document Number: 91156
V
AT
°C
Page 2
IRFI740G, SiHFI740G
D
S
G
S
D
G
www.vishay.com
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient R
Maximum Junction-to-Case (Drain) R
thJA
thJC
-65
-3.1
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
V
Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA - 0.49 - V/°C
DS
Gate-Source Threshold Voltage V
Gate-Source Leakage I
Zero Gate Voltage Drain Current I
Drain-Source On-State Resistance R
Forward Transconductance g
DS
GS(th)
V
GSS
DSS
VGS = 10 V ID = 3.2 A
DS(on)
fs
Dynamic
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
iss
- 380 -
oss
- 140 -
rss
Drain to Sink Capacitance C f = 1.0 MHz - 12 -
Total Gate Charge Q
Gate-Drain Charge Q
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Internal Drain Inductance L
g
--10
gs
--33
gd
d(on)
r
-54-
d(off)
-24-
f
D
package and center of
Internal Source Inductance L
S
VGS = 0 V, ID = 250 μA 400 - - V
VDS = VGS, ID = 250 μA 2.0 - 4.0 V
= ± 20 V - - ± 100 nA
GS
VDS = 400 V, VGS = 0 V - - 25
= 320 V, VGS = 0 V, TJ = 125 °C - - 250
V
DS
VDS = 50 V, ID = 3.2 A
b
b
VGS = 0 V,
V
= 25 V,
DS
f = 1.0 MHz, see fig. 5
= 10 A, VDS = 320 V,
I
V
GS
= 10 V
V
R
D
see fig. 6 and 13
= 200 V, ID = 10 A,
DD
= 9.1 , RD= 20 ,
g
see fig. 10
b
b
Between lead,
6 mm (0.25") from
die contact
Vishay Siliconix
°C/W
μA
- - 0.55
3.6 - - S
- 1370 -
pF
--66
nC Gate-Source Charge Q
-14-
-25-
-4.5-
-7.5-
ns
nH
Gate Input Resistance R
g
f = 1 MHz, open drain 0.2 - 1.3
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
Pulsed Diode Forward Current
a
Body Diode Voltage V
Body Diode Reverse Recovery Time t
Body Diode Reverse Recovery Charge Q
Forward Turn-On Time t
S
I
SM
SD
rr
rr
on
MOSFET symbol
showing the
integral reverse
p - n junction diode
TJ = 25 °C, IS = 5.4 A, VGS = 0 V
b
TJ = 25 °C, IF = 10 A, dI/dt = 100 A/μs
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
--5.4
--22
--2.0V
- 330 730 ns
b
-2.86.6μC
A
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle  2 %.
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: hvm@vishay.com
S16-0763-Rev. C, 02-May-16
2
Document Number: 91156
Page 3
www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
IRFI740G, SiHFI740G
Vishay Siliconix
Fig. 1 - Typical Output Characteristics, TC = 25 °C
Fig. 2 - Typical Output Characteristics, T
= 150 °C
C
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
S16-0763-Rev. C, 02-May-16
For technical questions, contact: hvm@vishay.com
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
3
Document Number: 91156
Page 4
www.vishay.com
IRFI740G, SiHFI740G
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 8 - Maximum Safe Operating Area
S16-0763-Rev. C, 02-May-16
For technical questions, contact: hvm@vishay.com
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
4
Document Number: 91156
Page 5
www.vishay.com
Pulse width ≤ 1 µs Duty factor ≤ 0.1 %
R
D
V
GS
R
g
D.U.T.
10 V
+
-
V
DS
V
DD
V
DS
90 %
10 %
V
GS
t
d(on)
t
r
t
d(off)
t
f
R
g
I
AS
0.01 Ω
t
p
D.U.T
L
V
DS
+
-
V
DD
10 V
Vary t
p
to obtain
required I
AS
IRFI740G, SiHFI740G
Vishay Siliconix
Fig. 10a - Switching Time Test Circuit
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig. 10b - Switching Time Waveforms
V
DS
t
p
V
DD
Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms
S16-0763-Rev. C, 02-May-16
V
DS
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5
For technical questions, contact: hvm@vishay.com
I
AS
Document Number: 91156
Page 6
www.vishay.com
Q
GS
Q
GD
Q
G
V
G
Charge
V
GS
IRFI740G, SiHFI740G
Vishay Siliconix
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Current regulator
Same type as D.U.T.
50 kΩ
0.2 µF
12 V
V
GS
0.3 µF
D.U.T.
3 mA
I
G
Current sampling resistors
I
D
+
-
Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit
V
DS
S16-0763-Rev. C, 02-May-16
6
Document Number: 91156
For technical questions, contact: hvm@vishay.com
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Page 7
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P.W.
Period
dI/dt
Diode recovery
dV/dt
Ripple ≤ 5 %
Body diode forward drop
Re-applied voltage
Reverse recovery current
Body diode forward
current
VGS = 10 V a
V
DD
I
SD
Driver gate drive
D.U.T. I
SD
waveform
D.U.T. VDSwaveform
Inductor current
D =
P.W.
Period
+
-
+
+
+
-
-
-
Note
a. V
GS
= 5 V for logic level devices
Peak Diode Recovery dV/dt Test Circuit
V
DD
• dV/dt controlled by R
g
• Driver same type as D.U.T.
• I
SD
controlled by duty factor “D”
• D.U.T. - device under test
D.U.T.
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance current transformer
R
g
IRFI740G, SiHFI740G
Vishay Siliconix
Fig. 14 - For N-Channel
         
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91156
S16-0763-Rev. C, 02-May-16
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
.
7
For technical questions, contact: hvm@vishay.com
Document Number: 91156
Page 8
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
1
Document Number: 91000
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