Vishay IRFI720G, SiHFI720G Data Sheet

IRFI720G, SiHFI720G

www.vishay.com	Vishay Siliconix
	Power MOSFET

PRODUCT SUMMARY

VDS (V)		400
RDS(on) (Ω)	VGS = 10 V	1.8
Qg (Max.) (nC)		20
Qgs (nC)		3.3
Qgd (nC)		11
Configuration		Single
TO-220 FULLPAK		D
	G
	S	S
G D
	N-Channel MOSFET

FEATURES

• Isolated package

• High voltage isolation = 2.5 kVRMS (t = 60 s;	Available
f = 60 Hz)
• Sink to lead creepage distance = 4.8 mm	Available

•Dynamic dV/dt rating

•Low thermal resistance

•Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

Note

*This datasheet provides information about parts that are RoHS-compliant and/or parts that are non-RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information/tables in this datasheet for details.

DESCRIPTION

Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single screw fixing.

ORDERING INFORMATION

	Package	TO-220 FULLPAK
	Lead (Pb)-free	IRFI720GPbF
		SiHFI720G-E3
	SnPb	IRFI720G
		SiHFI720G

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER				SYMBOL	LIMIT	UNIT
Drain-Source Voltage				VDS	400	V
Gate-Source Voltage				VGS	± 20
Continuous Drain Current		VGS at 10 V	TC = 25 °C	ID	2.6
			TC = 100 °C		1.7	A
Pulsed Drain Current a				IDM	10
Linear Derating Factor					0.24	W/°C
Single Pulse Avalanche Energy b				EAS	150	mJ
Repetitive Avalanche Current a				IAR	2.6	A
Repetitive Avalanche Energy a				EAR	3.0	mJ
Maximum Power Dissipation		TC = 25 °C		PD	30	W
Peak Diode Recovery dV/dt c				dV/dt	4.0	V/ns
Operating Junction and Storage Temperature Range				TJ, Tstg	-55 to +150	°C
Soldering Recommendations (Peak Temperature) d		for 10 s			300
Mounting Torque		6-32 or M3 screw			10	lbf · in
					1.1	N · m

Notes

a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b.VDD = 50 V, starting TJ = 25 °C, L = 38 mH, RG = 25 Ω, IAS = 2.6 A (see fig. 12).

c.ISD ≤ 3.3 A, dI/dt ≤ 65 A/μs, VDD ≤ VDS, TJ ≤ 150 °C.

d.1.6 mm from case.

S14-2355-Rev. B, 08-Dec-14	1	Document Number: 91152
	For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRFI720G, SiHFI720G

www.vishay.com

THERMAL RESISTANCE RATINGS

Vishay Siliconix

	PARAMETER	SYMBOL	TYP.	MAX.	UNIT
	Maximum Junction-to-Ambient	RthJA	-	65	°C/W
	Maximum Junction-to-Case (Drain)	RthJC	-	4.1

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER		SYMBOL	TEST CONDITIONS									MIN.	TYP.	MAX.	UNIT
Static
Drain-Source Breakdown Voltage		VDS	VGS = 0 V, ID = 250 μA									400	-	-	V
VDS Temperature Coefficient		VDS/TJ	Reference to 25 °C, ID = 1 mA									-	0.51	-	V/°C
Gate-Source Threshold Voltage		VGS(th)	VDS = VGS, ID = 250 μA									2.0	-	4.0	V
Gate-Source Leakage		IGSS		VGS = ± 20 V								-	-	± 100	nA
Zero Gate Voltage Drain Current		IDSS	VDS = 400 V, VGS = 0 V									-	-	25	μA
			VDS = 320 V, VGS = 0 V, TJ = 125 °C									-	-	250
Drain-Source On-State Resistance		RDS(on)	VGS = 10 V			ID = 1.6 A b						-	-	1.8	Ω
Forward Transconductance		gfs	VDS = 50 V, ID = 1.6 A b									1.5	-	-	S
Dynamic
Input Capacitance		Ciss			VGS = 0 V,							-	410	-
Output Capacitance		Coss			VDS = 25 V,							-	120	-	pF
			f = 1.0 MHz, see fig. 5
Reverse Transfer Capacitance		Crss										-	47	-
Drain to Sink Capacitance		C			f = 1.0 MHz							-	12	-
Total Gate Charge		Qg			ID = 3.3 A, VDS = 320 V,							-	-	20
Gate-Source Charge		Qgs	VGS = 10 V									-	-	3.3	nC
					see fig. 6 and 13 b
Gate-Drain Charge		Qgd										-	-	11
Turn-On Delay Time		td(on)	VDD = 200 V, ID = 3.3 A,									-	10	-
Rise Time		tr										-	14	-
			RG = 18 Ω, RD= 56 Ω,												ns
Turn-Off Delay Time		td(off)										-	30	-
					see fig. 10 b
Fall Time		tf										-	13	-
Internal Drain Inductance		LD	Between lead,							D		-	4.5	-
			6 mm (0.25") from
			package and center of			G									nH
Internal Source Inductance		LS	die contact							S		-	7.5	-
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current		IS	MOSFET symbol								D	-	-	2.6
			showing the												A
Pulsed Diode Forward Currenta		I	integral reverse			G						-	-	10
			p - n junction diode
		SM									S
Body Diode Voltage		VSD	TJ = 25 °C, IS = 2.6 A, VGS = 0 V b									-	-	1.6	V
Body Diode Reverse Recovery Time		trr	TJ = 25 °C, IF = 3.3 A, dI/dt = 100 A/μs b									-	300	600	ns
Body Diode Reverse Recovery Charge		Qrr										-	1.5	3.0	μC
Forward Turn-On Time		ton	Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes

a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b.Pulse width ≤ 300 μs; duty cycle ≤ 2 %.

S14-2355-Rev. B, 08-Dec-14	2	Document Number: 91152
	For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

www.vishay.com

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

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Fig. 1 - Typical Output Characteristics, TC = 25 °C

IRFI720G, SiHFI720G

Vishay Siliconix

10

TJ = 25 °C

TJ = 150 °C

1

0.1

VDS = 26.2V

0.01

4

5

6

7

8

9

10

VGS, Gate-to-Source Voltage (V)

Fig. 3 - Typical Transfer Characteristics

Fig. 2 - Typical Output Characteristics, TC = 150 °C		Fig. 4 - Normalized On-Resistance vs. Temperature

S14-2355-Rev. B, 08-Dec-14	3	Document Number: 91152
	For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000