Vishay IRFI720G, SiHFI720G Data Sheet
www.vishay.com
S
D
G
TO-220 FULLPAK
IRFI720G, SiHFI720G
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) 400
R
(Ω)V
DS(on)
Q
(Max.) (nC) 20
g
Q
(nC) 3.3
gs
Q
(nC) 11
gd
Configuration Single
= 10 V 1.8
GS
G
N-Channel MOSFET
FEATURES
• Isolated package
• High voltage isolation = 2.5 kV
f = 60 Hz)
(t = 60 s;
RMS
• Sink to lead creepage distance = 4.8 mm
Available
Available
• Dynamic dV/dt rating
• Low thermal resistance
• Material categorization: for definitions of compliance
D
please see www.vishay.com/doc?99912
Note
*
Thi s datasheet pro vi des information about parts that are
RoHS-compliant and/or parts that are non-RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information/tables in this datasheet for details.
DESCRIPTION
Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
S
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220 FULLPAK eliminates the need for additional
insulating hardware in commercial-industrial applications.
The molding compound used provides a high isolation
capability and a low thermal resistance between the tab and
external heatsink. This isolation is equivalent to using a 100
micron mica barrier with standard TO-220 product. The
FULLPAK is mounted to a heatsink using a single clip or by
a single screw fixing.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 °C, L = 38 mH, RG = 25 Ω, IAS = 2.6 A (see fig. 12).
c. I
d. 1.6 mm from case.
S14-2355-Rev. B, 08-Dec-14
ORDERING INFORMATION
Package TO-220 FULLPAK
Lead (Pb)-free
SnPb
IRFI720GPbF
SiHFI720G-E3
IRFI720G
SiHFI720G
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate-Source Voltage V
= 25 °C
T
Continuous Drain Current V
Pulsed Drain Current
a
at 10 V
GS
C
= 100 °C 1.7
C
DS
± 20
GS
I
D
IDM 10
Linear Derating Factor 0.24 W/°C
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation T
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range T
Soldering Recommendations (Peak Temperature)
b
a
a
= 25 °C P
c
d
C
for 10 s 300
E
AS
I
AR
E
AR
D
dV/dt 4.0 V/ns
, T
J
stg
Mounting Torque 6-32 or M3 screw
≤ 3.3 A, dI/dt ≤ 65 A/μs, VDD ≤ VDS, TJ ≤ 150 °C.
SD
1
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
400
2.6
150 mJ
2.6 A
3.0 mJ
30 W
-55 to +150
10 lbf · in
1.1 N · m
Document Number: 91152
V
AT
°C
IRFI720G, SiHFI720G
D
S
G
S
D
G
www.vishay.com
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient R
Maximum Junction-to-Case (Drain) R
thJA
thJC
-65
-4.1
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
V
Temperature Coefficient ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.51 - V/°C
DS
Gate-Source Threshold Voltage V
Gate-Source Leakage I
Zero Gate Voltage Drain Current I
Drain-Source On-State Resistance R
Forward Transconductance g
DS
GS(th)
V
GSS
DSS
VGS = 10 V ID = 1.6 A
DS(on)
fs
Dynamic
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
iss
- 120 -
oss
-47-
rss
Drain to Sink Capacitance C f = 1.0 MHz - 12 -
Total Gate Charge Q
Gate-Drain Charge Q
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Internal Drain Inductance L
g
--3.3
gs
--11
gd
d(on)
r
-30-
d(off)
-13-
f
D
Between lead,
6 mm (0.25") from
package and center of
Internal Source Inductance L
S
die contact
VGS = 0 V, ID = 250 μA 400 - - V
VDS = VGS, ID = 250 μA 2.0 - 4.0 V
= ± 20 V - - ± 100 nA
GS
VDS = 400 V, VGS = 0 V - - 25
= 320 V, VGS = 0 V, TJ = 125 °C - - 250
V
DS
VDS = 50 V, ID = 1.6 A
b
b
VGS = 0 V,
V
= 25 V,
DS
f = 1.0 MHz, see fig. 5
= 3.3 A, VDS = 320 V,
I
V
GS
= 10 V
V
D
see fig. 6 and 13
= 200 V, ID = 3.3 A,
DD
R
= 18 Ω, RD= 56 Ω,
G
see fig. 10
b
b
Vishay Siliconix
°C/W
μA
--1.8Ω
1.5 - - S
- 410 -
pF
--20
nC Gate-Source Charge Q
-10-
-14-
-4.5-
-7.5-
ns
nH
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
Pulsed Diode Forward Current
a
Body Diode Voltage V
Body Diode Reverse Recovery Time t
Body Diode Reverse Recovery Charge Q
Forward Turn-On Time t
S
I
SM
SD
rr
rr
on
MOSFET symbol
showing the
integral reverse
p - n junction diode
TJ = 25 °C, IS = 2.6 A, VGS = 0 V
b
TJ = 25 °C, IF = 3.3 A, dI/dt = 100 A/μs
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
--2.6
--10
--1.6V
- 300 600 ns
b
-1.53.0μC
A
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %.
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: hvm@vishay.com
S14-2355-Rev. B, 08-Dec-14
2
Document Number: 91152
www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
IRFI720G, SiHFI720G
Vishay Siliconix
Fig. 1 - Typical Output Characteristics, TC = 25 °C
10
1
0.1
, Drain-to-Source Current (A)
D
I
0.01
45678910
TJ= 25 °C
TJ= 150 °C
VDS= 26.2V
VGS, Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Output Characteristics, T
S14-2355-Rev. B, 08-Dec-14
= 150 °C
C
3
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91152
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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