Vishay IRFD9220, SiHFD9220 Data Sheet

www.vishay.com

S

G

D

P-Channel MOSFET

HVMDIP

D

S

G

IRFD9220, SiHFD9220

Vishay Siliconix

Power MOSFET

PRODUCT SUMMARY

VDS (V) - 200

R

()V

DS(on)

Q

(Max.) (nC) 15

g

(nC) 3.2

Q

gs

Q

(nC) 8.4

gd

Configuration Single

= - 10 V 1.5

GS

FEATURES

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

• For Automatic Insertion

Available

RoHS*

COMPLIANT

•End Stackable

•P-Channel

• Fast Switching

• Ease of Paralleling

• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912

Note

* Lead (Pb)-containing terminations are not RoHS-compliant.

Exemptions may apply.

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The 4 pin DIP package is a low cost machine-insertable
case style which can be stacked in multiple combinations on
standard 0.1" pin centers. The dual drain serves as a thermal
link to the mounting surface for power dissipation levels up
to 1 W.

ORDERING INFORMATION

Package HVMDIP

Lead (Pb)-free

SnPb

IRFD9220PbF
SiHFD9220-E3
IRFD9220
SiHFD9220

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

Gate-Source Voltage V

= 25 °C

T

Continuous Drain Current V

Pulsed Drain Current

a

at - 10 V

GS

A

= 100 °C - 0.36

A

DS

± 20

GS

I

D

IDM - 4.5

Linear Derating Factor 0.0083 W/°C

Single Pulse Avalanche Energy

Avalanche Current

a

Repetitive Avalanche Energy

Maximum Power Dissipation T

Peak Diode Recovery dV/dt

Operating Junction and Storage Temperature Range T

b

a

= 25 °C P

c

A

E

AS

I

AR

E

AR

D

dV/dt - 5.0 V/ns

, T

J

stg

Soldering Recommendations (Peak Temperature) for 10 s 300

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V

= - 50 V, starting TJ = 25 °C, L = 17.8 mH, Rg = 25 , IAS = - 3 A (see fig. 12).

DD

c. I

 - 3.9 A, dI/dt  95 A/μs, VDD  VDS, TJ  150 °C.

SD

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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

- 200

- 0.56

80 mJ

- 0.56 A

0.10 mJ

1.0 W

- 55 to + 150

d

Document Number: 91141

V

AT

°C

IRFD9220, SiHFD9220

D

S

G

S

D

G

www.vishay.com

d. 1.6 mm from case.

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient R

thJA

- 120 °C/W

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

V

Temperature Coefficient VDS/TJ Reference to 25 °C, ID = - 1 mA - - 0.22 - V/°C

DS

Gate-Source Threshold Voltage V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

Drain-Source On-State Resistance R

Forward Transconductance g

DS

GS(th)

V

GSS

DSS

VGS = - 10 V ID = - 0.34 A

DS(on)

fs

Dynamic

Input Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Gate-Drain Charge Q

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Internal Drain Inductance L

Internal Source Inductance L

iss

- 110 -

oss

-33-

rss

g

--3.2

gs

--8.4

gd

d(on)

r

-7.3-

d(off)

-19-

f

D

S

VGS = 0 V, ID = - 250 μA - 200 - - V

VDS = VGS, ID = - 250 μA - 2.0 - - 4.0 V

= ± 20 V - - ± 100 nA

GS

VDS = - 200 V, VGS = 0 V - - - 100

V

= - 160 V, VGS = 0 V, TJ = 125 °C - - - 500

DS

b

VDS = - 50 V, ID = - 0.35 A

b

VGS = 0 V,

V

= - 25 V,

DS

f = 1.0 MHz, see fig. 5

= - 2.1 A, VDS = - 160 V,

I

= - 10 V

V

GS

V

R

= 18 , RD = 24 , see fig. 10

g

D

see fig. 6 and 13

= - 100 V, ID = - 3.9 A,

DD

b

b

Between lead,
6 mm (0.25") from
package and center of
die contact

Vishay Siliconix

--1.5

0.55 - - S

- 340 -

--15

-8.8-

-27-

-4.0-

-6.0-

μA

pFOutput Capacitance C

nC Gate-Source Charge Q

ns

nH

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

Pulsed Diode Forward Current

a

Body Diode Voltage V

Body Diode Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

S

MOSFET symbol
showing the

integral reverse

I

SM

SD

rr

rr

p - n junction diode

TJ = 25 °C, IS = - 0.56 A, VGS = 0 V

b

TJ = 25 °C, IF = - 3.9 A, dI/dt = 100 A/μs

--- 0.56

--- 4.5

--- 6.3V

- 150 300 ns

b

- 0.97 2.0 μC

A

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. Pulse width  300 μs; duty cycle  2 %.

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

For technical questions, contact: [e-mail]

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Document Number: 91141

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20 μs PULSE WIDTH
T

A

= 25 °C

20 μs PULSE WIDTH
T

A

= 150 °C

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

IRFD9220, SiHFD9220

Vishay Siliconix

Fig. 1 - Typical Output Characteristics, TA = 25 °C

Fig. 2 - Typical Output Characteristics, T

= 150 °C

A

Fig. 3 - Typical Transfer Characteristics

Fig. 4 - Normalized On-Resistance vs. Temperature

S12-0617-Rev. D, 26-Mar-12

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www.vishay.com

TA = 25 °C
T

J

= 150 °C

SINGLE PULSE

IRFD9220, SiHFD9220

Vishay Siliconix

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

Fig. 7 - Typical Source-Drain Diode Forward Voltage

Fig. 8 - Maximum Safe Operating Area

S12-0617-Rev. D, 26-Mar-12

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, Drain Current (A)

Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %

R

D

V

GS

R

g

D.U.T.

- 10 V

+

-

V

DS

V

DD

V

GS

10 %

90 %

V

DS

t

d(on)

t

r

t

d(off)

t

f

Thermal Response (Z

thJA

)

t1, Rectangular Pulse Duration (s)t1, Rectangular Pulse Duration (s)

D

I

www.vishay.com

TA, Ambient Temperature (°C)

IRFD9220, SiHFD9220

Vishay Siliconix

Fig. 10 - Switching Time Test Circuit

Fig. 9 - Maximum Drain Current vs. Ambient Temperature

Fig. 12 - Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

Fig. 11 - Switching Time Waveforms

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Document Number: 91141

IRFD9220, SiHFD9220

R

g

I

AS

0.01 W

t

p

D.U.T.

L

V

DS

+

-

V

DD

- 10 V

Vary tp to obtain
required I

AS

I

AS

V

DS

V

DD

V

DS

t

p

www.vishay.com

Fig. 13 - Unclamped Inductive Test Circuit Fig. 14 - Unclamped Inductive Waveforms

Vishay Siliconix

Fig. 15 - Maximum Avalanche Energy vs. Drain Current

Current regulator

Same type as D.U.T.

Q

- 10 V

Q

GS

V

G

G

Q

GD

Charge

12 V

V

GS

50 kΩ

0.2 µF

0.3 µF

- 3 mA

I

G

Current sampling resistors

D.U.T.

I

D

Fig. 16 - Basic Gate Charge Waveform Fig. 17 - Gate Charge Test Circuit

S12-0617-Rev. D, 26-Mar-12

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Document Number: 91141

-

V

+

DS

www.vishay.com

P.W.

Period

dI/dt

Diode recovery

dV/dt

Body diode forward drop

Body diode forward

current

Driver gate drive

Inductor current

D =

P.W.

Period

+

-

-

-

-

+

+

+

Peak Diode Recovery dV/dt Test Circuit

• dV/dt controlled by R

g

• D.U.T. - device under test

D.U.T.

Circuit layout considerations

• Low stray inductance

• Ground plane

• Low leakage inductance

current transformer

R

g

• Compliment N-Channel of D.U.T. for driver

V

DD

• I

SD

controlled by duty factor “D”

Note

Note

a. V

GS

= - 5 V for logic level and - 3 V drive devices

V

GS

= - 10 V

a

D.U.T. lSD waveform

D.U.T. V

DS

waveform

V

DD

Re-applied
voltage

Ripple ≤ 5 %

I

SD

Reverse
recovery
current

IRFD9220, SiHFD9220

Vishay Siliconix

Fig. 18 - For P-Channel

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91141

S12-0617-Rev. D, 26-Mar-12

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.

7

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Document Number: 91141

HVM DIP (High voltage)

Package Information

Vishay Siliconix

0.248 [6.29]

0.240 [6.10]

0.043 [1.09]

0.035 [0.89]

0.094 [2.38]

0.086 [2.18]

0.017 [0.43]

0.013 [0.33]

0° to 15°
2 x

E min.

E max.

0.133 [3.37]

0.125 [3.18]

0.045 [1.14]

2 x

0.035 [0.89]

A

0.100 [2.54] typ.

L

0.197 [5.00]

0.189 [4.80]

0.160 [4.06]

0.140 [3.56]

0.024 [0.60]

0.020 [0.51]

0.180 [4.57]

0.160 [4.06]

4 x

INCHES MILLIMETERS

DIM. MIN. MAX. MIN. MAX.

A 0.310 0.330 7.87 8.38

E 0.300 0.425 7.62 10.79

L 0.270 0.290 6.86 7.36

ECN: X10-0386-Rev. B, 06-Sep-10
DWG: 5974

Note

1. Package length does not include mold flash, protrusions or gate burrs. Package width does not include interlead flash or protrusions.

Document Number: 91361 www.vishay.com
Revision: 06-Sep-10 1

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Revision: 13-Jun-16

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Document Number: 91000