Vishay IRFD9220, SiHFD9220 Data Sheet

IRFD9220, SiHFD9220

www.vishay.com	Vishay Siliconix
	Power MOSFET

PRODUCT SUMMARY

VDS (V)	- 200
RDS(on) ( )	VGS = - 10 V	1.5
Qg (Max.) (nC)	15
Qgs (nC)	3.2
Qgd (nC)	8.4
Configuration	Single
		S
HVMDIP
	G
S	G
D		D

P-Channel MOSFET

FEATURES

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated	Available

	• For Automatic Insertion	RoHS*
		COMPLIANT

•End Stackable

•P-Channel

•Fast Switching

•Ease of Paralleling

•Material categorization: For definitions of compliance please see www.vishay.com/doc?99912

Note

*Lead (Pb)-containing terminations are not RoHS-compliant. Exemptions may apply.

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinations on standard 0.1" pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 W.

ORDERING INFORMATION

	Package	HVMDIP
	Lead (Pb)-free	IRFD9220PbF
		SiHFD9220-E3
	SnPb	IRFD9220
		SiHFD9220

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

PARAMETER				SYMBOL	LIMIT	UNIT
Drain-Source Voltage				VDS	- 200	V
Gate-Source Voltage				VGS	± 20
Continuous Drain Current		VGS at - 10 V	TA = 25 °C	ID	- 0.56
			TA = 100 °C		- 0.36	A
Pulsed Drain Currenta				IDM	- 4.5
Linear Derating Factor					0.0083	W/°C
Single Pulse Avalanche Energyb				EAS	80	mJ
Avalanche Currenta				IAR	- 0.56	A
Repetitive Avalanche Energya				EAR	0.10	mJ
Maximum Power Dissipation		TA = 25 °C		PD	1.0	W
Peak Diode Recovery dV/dtc				dV/dt	- 5.0	V/ns
Operating Junction and Storage Temperature Range				TJ, Tstg	- 55 to + 150	°C
Soldering Recommendations (Peak Temperature)		for 10 s			300d

Notes

a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b.VDD = - 50 V, starting TJ = 25 °C, L = 17.8 mH, Rg = 25 , IAS = - 3 A (see fig. 12).

c.ISD - 3.9 A, dI/dt 95 A/μs, VDD VDS, TJ 150 °C.

S12-0617-Rev. D, 26-Mar-12	1	Document Number: 91141
	For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

www.vishay.com

d. 1.6 mm from case.

IRFD9220, SiHFD9220

Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER	SYMBOL	TYP.	MAX.	UNIT
Maximum Junction-to-Ambient	RthJA	-	120	°C/W

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

	PARAMETER	SYMBOL	TEST CONDITIONS			MIN.	TYP.	MAX.	UNIT
	Static
	Drain-Source Breakdown Voltage	VDS	VGS = 0 V, ID = - 250 μA			- 200	-	-	V
	VDS Temperature Coefficient	VDS/TJ	Reference to 25 °C, ID = - 1 mA			-	- 0.22	-	V/°C
	Gate-Source Threshold Voltage	VGS(th)	VDS = VGS, ID = - 250 μA			- 2.0	-	- 4.0	V
	Gate-Source Leakage	IGSS		VGS = ± 20 V		-	-	± 100	nA
	Zero Gate Voltage Drain Current	IDSS	VDS = - 200 V, VGS = 0 V			-	-	- 100	μA
			VDS = - 160 V, VGS = 0 V, TJ = 125 °C			-	-	- 500
	Drain-Source On-State Resistance	RDS(on)	VGS = - 10 V	ID = - 0.34 Ab		-	-	1.5
	Forward Transconductance	gfs	VDS = - 50 V, ID = - 0.35 Ab			0.55	-	-	S
	Dynamic
	Input Capacitance	Ciss		VGS = 0 V,		-	340	-
		Coss
	Output Capacitance			VDS = - 25 V,		-	110	-	pF
	Reverse Transfer Capacitance	Crss	f = 1.0 MHz, see fig. 5			-	33	-
	Total Gate Charge	Qg		ID = - 2.1 A, VDS = - 160 V,		-	-	15
	Gate-Source Charge	Qgs	VGS = - 10 V			-	-	3.2	nC
				see fig. 6 and 13b
	Gate-Drain Charge	Qgd				-	-	8.4
	Turn-On Delay Time	td(on)				-	8.8	-
	Rise Time	tr	VDD = - 100 V, ID = - 3.9 A,			-	27	-	ns
	Turn-Off Delay Time	td(off)	Rg = 18 , RD = 24 , see fig. 10b			-	7.3	-
	Fall Time	tf				-	19	-
	Internal Drain Inductance	LD	Between lead,		D	-	4.0	-
			6 mm (0.25") from
									nH
			package and center of		G
	Internal Source Inductance	LS	die contact			-	6.0	-
					S
	Drain-Source Body Diode Characteristics
	Continuous Source-Drain Diode Current	IS	MOSFET symbol		D	-	-	- 0.56
			showing the						A
			integral reverse		G
	Pulsed Diode Forward Currenta	ISM	p - n junction diode		S	-	-	- 4.5

	Body Diode Voltage	VSD	TJ = 25 °C, IS = - 0.56 A, VGS = 0 Vb	-	-	- 6.3	V
	Body Diode Reverse Recovery Time	trr	TJ = 25 °C, IF = - 3.9 A, dI/dt = 100 A/μsb	-	150	300	ns
	Body Diode Reverse Recovery Charge	Qrr		-	0.97	2.0	μC

Notes

a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b.Pulse width 300 μs; duty cycle 2 %.

S12-0617-Rev. D, 26-Mar-12	2	Document Number: 91141
	For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRFD9220, SiHFD9220

www.vishay.com	Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

20 μs PULSE WIDTH TA = 25 °C

Fig. 1 - Typical Output Characteristics, TA = 25 °C

Fig. 3 - Typical Transfer Characteristics

20 μs PULSE WIDTH TA = 150 °C

Fig. 2 - Typical Output Characteristics, TA = 150 °C

Fig. 4 - Normalized On-Resistance vs. Temperature

S12-0617-Rev. D, 26-Mar-12	3	Document Number: 91141
	For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000