Vishay IRFD9210, SiHFD9210 Data Sheet

IRFD9210, SiHFD9210

Vishay Siliconix

Power MOSFET

PRODUCT SUMMARY

VDS (V)	- 200
RDS(on) ( )	VGS = - 10 V		3.0
Qg (Max.) (nC)	8.9
Qgs (nC)	2.1
Qgd (nC)	3.9
Configuration	Single
			S

HVMDIP

G

S

G

D D

P-Channel MOSFET

FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated	Available
• For Automatic Insertion	RoHS*
	COMPLIANT

•End Stackable

•P-Channel

•Fast Switching

•Ease of Paralleling

•Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

The Power MOSFETs technology is the key to Vishay advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design archieve very low on-state resistance combined with high transconductance and extreme device ruggedness.

The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinations on standard 0.1" pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 W.

ORDERING INFORMATION
Package				HVMDIP
Lead (Pb)-free				IRFD9210PbF
				SiHFD9210-E3
SnPb				IRFD9210
				SiHFD9210
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER						SYMBOL	LIMIT		UNIT
Drain-Source Voltage						VDS	- 200		V
Gate-Source Voltage						VGS	± 20
Continuous Drain Current		VGS at - 10 V		TA = 25 °C		ID	- 0.40
				TA = 100 °C			- 0.25		A
Pulsed Drain Currenta						IDM	- 3.2
Linear Derating Factor							0.0083		W/°C
Single Pulse Avalanche Energyb						EAS	210		mJ
Repetitive Avalanche Currenta						IAR	- 0.40		A
Repetitive Avalanche Energya						EAR	0.10		mJ
Maximum Power Dissipation		TA = 25 °C				PD	1.0		W
Peak Diode Recovery dV/dtc						dV/dt	- 5.0		V/ns
Operating Junction and Storage Temperature Range						TJ, Tstg	- 55 to + 150		°C
Soldering Recommendations (Peak Temperature)		for 10 s					300d
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = - 50 V, starting TJ = 25 °C, L = 123 mH, Rg = 25 , IAS = - 1.6 A (see fig. 12).
c. ISD - 2.3 A, dI/dt 70 A/µs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91140								www.vishay.com
S10-2464-Rev. C, 25-Oct-10								1

IRFD9210, SiHFD9210

Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER	SYMBOL	TYP.	MAX.	UNIT
Maximum Junction-to-Ambient	RthJA	-	120	°C/W

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = - 250 µA

- 200

-

-

V

VDS Temperature Coefficient

VDS/TJ

Reference to 25 °C, ID = - 1 mA

-

- 0.23

-

V/°C

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = - 250 µA

- 2.0

-

- 4.0

V

Gate-Source Leakage

IGSS

VGS = ± 20 V

-

-

± 100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = - 200 V, VGS = 0 V

-

-

- 100

µA

VDS = - 160 V, VGS = 0 V, TJ = 125 °C

-

-

- 500

Drain-Source On-State Resistance

R

DS(on)

V

= - 10 V

I

D

= - 0.24 Ab

-

-

3.0

GS

Forward Transconductance

gfs

VDS = - 50 V, ID = - 0.24 A

0.27

-

-

S

Dynamic

Input Capacitance

Ciss

VGS = 0 V,

-

170

-

Output Capacitance

Coss

VDS = - 25 V,

-

54

-

pF

Reverse Transfer Capacitance

Crss

f = 1.0 MHz, see fig. 5

-

16

-

Total Gate Charge

Qg

ID = - 1.3 A, VDS = - 160 V

-

-

8.9

Gate-Source Charge

Qgs

VGS = - 10 V

-

-

2.1

nC

see fig. 6 and 13b

Gate-Drain Charge

Qgd

-

-

3.9

Turn-On Delay Time

td(on)

VDD = - 100 V, ID = - 2.3 A

-

8.0

-

Rise Time

tr

-

12

-

Rg = 24 , RD = 41

ns

Turn-Off Delay Time

td(off)

-

11

-

Fall Time

tf

see fig. 10b

-

13

-

Internal Drain Inductance

LD

Between lead,

D

-

4.0

-

6 mm (0.25") from

nH

package and center of

G

Internal Source Inductance

LS

die contact

-

6.0

-

S

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

IS

MOSFET symbol

D

-

-

- 0.40

showing the

A

integral reverse

G

Pulsed Diode Forward Currenta

ISM

-

-

- 3.2

p - n junction diode

S

Body Diode Voltage

V

T

= 25 °C, I = - 0.40 A, V

= 0 Vb

-

-

- 5.8

V

SD

J

S

GS

Body Diode Reverse Recovery Time

trr

T

= 25 °C, I

= - 2.3 A, dI/dt = 100 A/µsb

-

110

220

ns

J

Body Diode Reverse Recovery Charge

Qrr

F

-

0.56

1.1

µC

Notes

a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b.Pulse width 300 µs; duty cycle 2 %.

www.vishay.com	Document Number: 91140
2	S10-2464-Rev. C, 25-Oct-10

IRFD9210, SiHFD9210

Vishay Siliconix

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

TA = 25 °C

Fig. 1 - Typical Output Characteristics, TA = 25 °C

Fig. 3 - Typical Transfer Characteristics

TA = 150 °C

Fig. 2 - Typical Output Characteristics, TA = 150 °C	Fig. 4 - Normalized On-Resistance vs. Temperature

Document Number: 91140	www.vishay.com
S10-2464-Rev. C, 25-Oct-10	3