Vishay IRFD9110, SiHFD9110 Data Sheet

IRFD9110, SiHFD9110

Vishay Siliconix

Power MOSFET

PRODUCT SUMMARY

VDS (V)	- 100
RDS(on) ( )	VGS = - 10 V	1.2
Qg (Max.) (nC)	8.7
Qgs (nC)	2.2
Qgd (nC)	4.1
Configuration	Single
	S
HVMDIP
	G
S	G
D	D
	P-Channel MOSFET

FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated	Available
• For Automatic Insertion	RoHS*
	COMPLIANT

•End Stackable

•P-Channel

•175 °C Operating Temperature

•Fast Switching

•Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinations on standard 0.1" pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 W.

ORDERING INFORMATION
Package				HVMDIP
Lead (Pb)-free				IRFD9110PbF
				SiHFD9110-E3
SnPb				IRFD9110
				SiHFD9110
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER						SYMBOL	LIMIT		UNIT
Drain-Source Voltage						VDS	- 100		V
Gate-Source Voltage						VGS	± 20
Continuous Drain Current		VGS at - 10 V		TA = 25 °C		ID	- 0.70
				TA = 100 °C			- 0.49		A
Pulsed Drain Currenta						IDM	- 5.6
Linear Derating Factor							0.0083		W/°C
Single Pulse Avalanche Energyb						EAS	140		mJ
Repetitive Avalanche Currenta						IAR	- 0.7		A
Repetitive Avalanche Energya						EAR	0.13		mJ
Maximum Power Dissipation		TA = 25 °C				PD	1.3		W
Peak Diode Recovery dV/dtc						dV/dt	- 5.5		V/ns
Operating Junction and Storage Temperature Range						TJ, Tstg	- 55 to + 175		°C
Soldering Recommendations (Peak Temperature)		for 10 s					300d
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = - 25 V, starting TJ = 25 °C, L = 52 mH, Rg = 25 , IAS = - 2.0 A (see fig. 12).
c. ISD - 4.0 A, dI/dt 75 A/μs, VDD VDS, TJ 175 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91138								www.vishay.com
S10-2464-Rev. C, 25-Oct-10								1

IRFD9110, SiHFD9110

Vishay Siliconix

	THERMAL RESISTANCE RATINGS
	PARAMETER	SYMBOL	TYP.		MAX.			UNIT
	Maximum Junction-to-Ambient	RthJA	-		120			°C/W
	SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
	PARAMETER	SYMBOL	TEST CONDITIONS			MIN.	TYP.	MAX.	UNIT
	Static
	Drain-Source Breakdown Voltage	VDS	VGS = 0 V, ID = - 250 μA			- 100	-	-	V
	VDS Temperature Coefficient	VDS/TJ	Reference to 25 °C, ID = - 1 mA			-	- 0.091	-	V/°C
	Gate-Source Threshold Voltage	VGS(th)	VDS = VGS, ID = - 250 μA			- 2.0	-	- 4.0	V
	Gate-Source Leakage	IGSS		VGS = ± 20 V		-	-	± 100	nA
	Zero Gate Voltage Drain Current	IDSS	VDS = - 100 V, VGS = 0 V			-	-	- 100	μA
			VDS = - 80 V, VGS = 0 V, TJ = 150 °C			-	-	- 500
	Drain-Source On-State Resistance	RDS(on)	VGS = - 10 V	ID = - 0.42 Ab		-	-	1.2
	Forward Transconductance	gfs	VDS = - 50 V, ID = - 0.42 A			0.60	-	-	S
	Dynamic
	Input Capacitance	Ciss		VGS = 0 V,		-	200	-
	Output Capacitance	Coss		VDS = - 25 V,		-	94	-	pF
	Reverse Transfer Capacitance	Crss	f = 1.0 MHz, see fig. 5			-	18	-
	Total Gate Charge	Qg		ID = - 4.0 A, VDS = - 80 V		-	-	8.7
	Gate-Source Charge	Qgs	VGS = - 10 V			-	-	2.2	nC
				see fig. 6 and 13b
	Gate-Drain Charge	Qgd				-	-	4.1
	Turn-On Delay Time	td(on)	VDD = - 50 V, ID = - 4.0 A			-	10	-
	Rise Time	tr				-	27	-
			Rg = 24 , RD = 11						ns
	Turn-Off Delay Time	td(off)				-	15	-
	Fall Time	tf		see fig. 10b		-	17	-
	Internal Drain Inductance	LD	Between lead,		D	-	4.0	-
			6 mm (0.25") from						nH
			package and center of
	Internal Source Inductance	LS			G	-	6.0	-
			die contact		S
	Drain-Source Body Diode Characteristics
	Continuous Source-Drain Diode Current	IS	MOSFET symbol		D	-	-	- 0.70
			showing the
									A
			integral reverse		G
	Pulsed Diode Forward Currenta	ISM				-	-	- 5.6
			p - n junction diode		S
	Body Diode Voltage	VSD	TJ = 25 °C, IS = - 0.7 A, VGS = 0 Vb			-	-	- 5.5	V
	Body Diode Reverse Recovery Time	trr	TJ = 25 °C, IF = - 4.0 A, dI/dt = 100 A/μsb			-	82	160	ns
	Body Diode Reverse Recovery Charge	Qrr				-	0.15	0.30	μC

Notes

a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b.Pulse width 300 μs; duty cycle 2 %.

www.vishay.com	Document Number: 91138
2	S10-2464-Rev. C, 25-Oct-10

IRFD9110, SiHFD9110

Vishay Siliconix

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

TA = 25 °C

Fig. 1 - Typical Output Characteristics, TA = 25 °C

Fig. 3 - Typical Transfer Characteristics

TA = 175 °C

Fig. 2 - Typical Output Characteristics, TA = 175 °C

Fig. 4 - Normalized On-Resistance vs. Temperature

Document Number: 91138	www.vishay.com
S10-2464-Rev. C, 25-Oct-10	3