Vishay IRFD9024, SiHFD9024 Data Sheet
Power MOSFET
HVMDIP
D
S
G
Available
RoHS*
COMPLIANT
IRFD9024, SiHFD9024
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) - 60
()V
R
DS(on)
Q
(Max.) (nC) 19
g
Q
(nC) 5.4
gs
Q
(nC) 11
gd
Configuration Single
= - 10 V 0.28
GS
S
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• For Automatic Insertion
•End Stackable
• P-Channel
•Fast Switching
• 175 °C Operating Temperature
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
G
D
P-Channel MOSFET
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The 4 pin DIP package is a low cost machine-insertable
case style which can be stacked in multiple combinations on
standard 0.1" pin centers. The dual drain servers as a
thermal link to the mounting surface for power dissipation
levels up to 1 W.
ORDERING INFORMATION
Package HVMDIP
Lead (Pb)-free
SnPb
IRFD9024PbF
SiHFD9024-E3
IRFD9024
SiHFD9024
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate-Source Voltage V
T
= 25 °C
Continuous Drain Current V
Pulsed Drain Current
a
at - 10 V
GS
A
= 100 °C - 1.1
A
DS
± 20
GS
I
D
IDM - 13
Linear Derating Factor 0.0083 W/°C
Single Pulse Avalanche Energy
Avalanche Current
a
Repetitive Avalanche Energy
Maximum Power Dissipation T
Peak Diode Recovery dV/dt
b
a
= 25 °C P
c
A
Operating Junction and Storage Temperature Range T
E
AS
I
AR
E
AR
D
dV/dt - 4.5 V/ns
, T
J
stg
Soldering Recommendations (Peak Temperature) for 10 s 300
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
= - 25 V, starting TJ = 25 °C, L = 15 mH, Rg = 25 , IAS = - 3.2 A (see fig. 12).
DD
- 11 A, dI/dt 140 A/μs, VDD VDS, TJ 175 °C.
c. I
SD
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91137 www.vishay.com
S10-2463-Rev. C, 08-Nov-10 1
- 60
- 1.6
140 mJ
- 1.6 A
0.13 mJ
1.3 W
- 55 to + 175
d
V
AT
°C
IRFD9024, SiHFD9024
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient R
thJA
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
V
Temperature Coefficient VDS/TJ Reference to 25 °C, ID = - 1 mA - - 0.056 - V/°C
DS
Gate-Source Threshold Voltage V
Gate-Source Leakage I
Zero Gate Voltage Drain Current I
Drain-Source On-State Resistance R
Forward Transconductance g
Dynamic
Input Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Q
Gate-Drain Charge Q
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Internal Drain Inductance L
Internal Source Inductance L
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
Pulsed Diode Forward Current
a
Body Diode Voltage V
Body Diode Reverse Recovery Time t
Body Diode Reverse Recovery Charge Q
Forward Turn-On Time t
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
b. Pulse width 300 μs; duty cycle 2 %
DS
GS(th)
V
GSS
DSS
VGS = - 10 V ID = - 0.96 A
DS(on)
fs
iss
- 360 -
oss
-65-
rss
g
--5.4
gs
--11
gd
d(on)
r
-15-
d(off)
-29-
f
D
V
V
GS
R
Between lead,
6 mm (0.25") from
package and center of
S
S
die contact
MOSFET symbol
showing the
integral reverse
I
SM
SD
rr
rr
on
p - n junction diode
TJ = 25 °C, IS = - 1.6 A, VGS = 0 V
TJ = 25 °C, IF = - 11 A, dI/dt = 100 A/μs
- 120 °C/W
VGS = 0 V, ID = - 250 μA - 60 - - V
VDS = VGS, ID = - 250 μA - 2.0 - - 4.0 V
= ± 20 V - - ± 100 nA
GS
VDS = - 60 V, VGS = 0 V - - - 100
= - 48 V, VGS = 0 V, TJ = 150 °C - - - 500
DS
VDS = - 25 V, ID = - 0.96 A
VGS = 0 V
V
= - 25 V
DS
f = 1.0 MHz, see fig. 5
b
b
- - 0.28
1.3 - - S
- 570 -
--19
= - 11 A, VDS = - 48 V
I
= - 10 V
D
see fig. 6 and 13
b
-13-
V
= - 30 V, ID = - 11 A
DD
= 18 , RD = 2.5 , see fig. 10
g
G
G
b
D
S
D
S
b
-68-
-4.0-
-6.0-
--- 1.6
--- 13
--- 6.3V
- 100 200 ns
b
- 0.32 0.64 μC
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
μA
pFOutput Capacitance C
nC Gate-Source Charge Q
ns
nH
A
www.vishay.com Document Number: 91137
2 S10-2463-Rev. C, 08-Nov-10
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
TA = 25 °C
IRFD9024, SiHFD9024
Vishay Siliconix
Fig. 1 - Typical Output Characteristics, TA = 25 °C
TA = 175 °C
Fig. 2 - Typical Output Characteristics, T
= 175 °C
A
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91137 www.vishay.com
S10-2463-Rev. C, 08-Nov-10 3
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