Vishay IRFD9010, SiHFD9010 Data Sheet
Power MOSFET
IRFD9010, SiHFD9010
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) - 50
R
(Ω)V
DS(on)
Q
(Max.) (nC) 11
g
Q
(nC) 3.8
gs
Q
(nC) 4.1
gd
Configuration Single
HVMDIP
S
G
D
= - 10 V 0.50
GS
G
P-Channel MOSFET
FEATURES
• For Automatic Insertion
• Compact, End Stackable
•Fast Switching
• Low Drive Current
• Easy Paralleled
• Excellent Temperature Stability
• P-Channel Versatility
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
The HVMDIP technology is the key to Vishay’s advanced
S
D
line of power MOSFET transistors. The efficient geometry
and unique processing of the HVMDIP design achieves
very low on-state resistance combined with high
transconductance and extreme device ruggedness.
The p-channel HVMDIPs are designed for application which
require the convenience of reverse polarity operation. They
retain all of the features of the more common n-channel
HVMDIPs such as voltage control, very fast switching, ease
of paralleling, and excellent temperature stability.
P-channels HVMDIPs are intended for use in power stages
where complementary symmetry with n-channel devices
offers circuit simplification. They are also very useful in drive
stages because of the circuit versatility offered by the
reverse polarity connection. Applications include motor
control, audio amplifiers, switched mode converters, control
circuits and pulse amplifiers.
ORDERING INFORMATION
Package HVMDIP
Lead (Pb)-free
SnPb
IRFD9010PbF
SiHFD9010-E3
IRFD9010
SiHFD9010
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate-Source Voltage V
T
= 25 °C
Continuous Drain Current V
Pulsed Drain Current
Linear Derating Factor 0.01 W/°C
Inductive Current, Clamped L = 100 µH see fig. 14 I
Inductive Current, Unclamped (Avalanche Current) see fig. 15 I
Maximum Power Dissipation T
Operating Junction and Storage Temperature Range T
Soldering Recommendations (Peak Temperature) for 10 s 300
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
= - 25 V, starting TJ = 25 °C, L = 52 mH, Rg = 25 Ω, IAS = - 2.0 A (see fig. 12).
DD
≤ - 4.0 A, dI/dt ≤ 75 A/μs, VDD ≤ VDS, TJ ≤ 175 °C.
c. I
SD
d. 1.6 mm from case.
a
at - 10 V
GS
C
= 100 °C - 0.68
C
= 25 °C P
C
DS
± 20
GS
I
D
IDM - 8.8
LM
L
D
, T
J
stg
- 50
- 1.1
- 8.8
- 1.5
1W
- 55 to + 150
d
V
AT
A
°C
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91405 www.vishay.com
S10-0998-Rev. A, 26-Apr-10 1
IRFD9010, SiHFD9010
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient R
thJA
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
V
Temperature Coefficient ΔVDS/TJ Reference to 25 °C, ID = - 1 mA - - 0.091 - V/°C
DS
Gate-Source Threshold Voltage V
Gate-Source Leakage I
Zero Gate Voltage Drain Current I
On-State Drain Current I
Drain-Source On-State Resistance R
Forward Transconductance g
Dynamic
Input Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Q
Gate-Drain Charge Q
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Internal Drain Inductance L
Internal Source Inductance L
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
Pulsed Diode Forward Current
a
Body Diode Voltage V
Body Diode Reverse Recovery Time t
Body Diode Reverse Recovery Charge Q
Forward Turn-On Time t
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %.
DS
GS(th)
V
GSS
DSS
V
D(on)
VGS = - 10 V ID = - 0.58 A
DS(on)
fs
iss
- 160 -
oss
-30-
rss
g
-2.53.8
gs
-2.74.1
gd
d(on)
r
-1320
d(off)
-3959
f
D
V
GS
V
GS
Between lead,
6 mm (0.25") from
package and center of
S
S
I
SM
SD
rr
rr
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
on
die contact
MOSFET symbol
showing the
integral reverse
p - n junction diode
TJ = 25 °C, IF = - 4.7 A, dI/dt = 100 A/μs
- 120 °C/W
VGS = 0 V, ID = - 250 μA - 50 - - V
VDS = VGS, ID = - 250 μA - 2.0 - - 4.0 V
= ± 20 V - - ± 500 nA
GS
VDS = - 50 V, VGS = 0 V - - - 250
= - 40 V, VGS = 0 V, TJ = 125 °C - - - 1000
DS
= 10 V VDS > I
D(on)
x R
max. - 1.1 - - A
DS(on)
b
- 0.35 0.50 Ω
VDS = - 20 V, ID = - 2.4 A 1.7 2.5 - S
VGS = 0 V,
V
= - 25 V,
DS
f = 1.0 MHz, see fig. 5
- 240 -
-7.211
= - 4.7 A, VDS = 0.8 V
I
= - 10 V
D
see fig. 6 and 13
b
-6.19.2
V
= - 25 V, ID = - 4.7 A
DD
R
= 24 Ω, RD = 5.6 Ω,
g
see fig. 10
b
G
G
TJ = 25 °C, IS = - 0.7 A, VGS = 0 V
D
S
D
S
b
-4771
-4.0-
-6.0-
--- 1.1A
--- 8.8
--- 5.5V
33 75 160 ns
b
0.090 0.22 0.52 μC
μA
pFOutput Capacitance C
nC Gate-Source Charge Q
ns
nH
www.vishay.com Document Number: 91405
2 S10-0998-Rev. A, 26-Apr-10
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
IRFD9010, SiHFD9010
Vishay Siliconix
, Drain Current (A)
D
- I
, Drain Current (A)
D
- I
10
- 10 V
8
6
4
2
0
80 μs Pulse Width
- VGS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
10
80 μs Pulse Width
8
6
4
2
0
- VGS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics
- 8 V
- 7 V
VGS = - 6 V
- 5 V
- 4 V
- 10 V
- 8 V
- 7 V
VGS = - 6 V
- 5 V
- 4 V
3.0
ID = - 4.7 V
2.4
1.8
1.2
(Normalized)
0.6
, Drain-to-Source on Resistance
DS(on)
0
2520151050
R
VGS = - 10 V
140120100806040200- 20- 40
160- 60
TJ, Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
500
400
300
200
Capacitance (pF)
100
0
543210
VGS = 0 V, f = 1 MHz
= Cgs + Cgd, Cds Shorted
C
iss
= C
C
rss
gd
C
= Cds + C
oss
gd
C
iss
C
oss
C
rss
100101
- VGS, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
, Drain Current (A)
D
- I
0.001
10
80 μs Pulse Width
0.1
0.01
VDS = 2 x V
1
TJ = 150 °C
GS
TJ = 25 °C
- VGS, Drain-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
1086430
20
ID = - 4.7 A
16
VDS = - 40 V
12
8
, Gate-to-Source Voltage (V)
4
GS
- V
0
For Test Circuit
See Figure 13
15129630
Qg, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Document Number: 91405 www.vishay.com
S10-0998-Rev. A, 26-Apr-10 3
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