Vishay IRFD420, SiHFD420 Data Sheet

Power MOSFET

N-Channel MOSFET

G

D

S

HVMDIP

D

S

G

Available

RoHS*

COMPLIANT

IRFD420, SiHFD420

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) 500

()V

R

DS(on)

Q

(Max.) (nC) 24

g

Q

(nC) 3.3

gs

Q

(nC) 13

gd

Configuration Single

= 10 V 3.0

GS

FEATURES

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

• For Automatic Insertion

•End Stackable

•Fast Switching

• Ease of Paralleling

• Simple Drive Requirements

• Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The 4 pin DIP package is a low cost machine-insertable
case style which can be stacked in multiple combinations on
standard 0.1 inch pin centers. The dual drain serves as a
thermal link to the mounting surface for power dissipation
levels up to 1 W.

ORDERING INFORMATION

Package HVMDIP

Lead (Pb)-free

SnPb

IRFD420PbF
SiHFD420-E3
IRFD420
SiHFD420

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

Gate-Source Voltage V

T

= 25 °C

Continuous Drain Current V

Pulsed Drain Current

a

at 10 V

GS

A

= 100 °C 0.23

A

DS

± 20

GS

I

D

IDM 3.0

Linear Derating Factor 0.0083 W/°C

Single Pulse Avalanche Energy

Repetitive Avalanche Current

Repetitive Avalanche Energy

Maximum Power Dissipation T

Peak Diode Recovery dV/dt

Operating Junction and Storage Temperature Range T

b

a

a

= 25 °C P

c

A

E

AS

I

AR

E

AR

D

dV/dt 3.5 V/ns

, T

J

stg

Soldering Recommendations (Peak Temperature) for 10 s 300

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature.

= 50 V, starting TJ = 25 °C, L = 40 mH, Rg = 25 , IAS = 1.5 A.

b. V

DD

c. I

 4.4 A, dI/dt  90 A/μs, VDD  VDS, TJ  150 °C.

SD

d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91135 www.vishay.com
S10-2463-Rev. C, 08-Nov-10 1

500

0.37

51 mJ

0.37 A

0.10 mJ

1.0 W

- 55 to + 150

d

V

AT

°C

IRFD420, SiHFD420

Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient R

thJA

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

V

Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA - 0.59 - V/°C

DS

Gate-Source Threshold Voltage V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

Drain-Source On-State Resistance R

Forward Transconductance g

Dynamic

Input Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Gate-Drain Charge Q

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Internal Drain Inductance L

Internal Source Inductance L

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

Pulsed Diode Forward Current

a

Body Diode Voltage V

Body Diode Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

Forward Turn-On Time t

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.

DS

GS(th)

V

GSS

DSS

VGS = 10 V ID = 0.22 A

DS(on)

fs

iss

-92-

oss

-37-

rss

g

--3.3

gs

--13

gd

d(on)

r

-33-

d(off)

-16-

f

D

V

V

GS

Between lead,
6 mm (0.25") from
package and center of

S

S

die contact

MOSFET symbol
showing the

integral reverse

I

SM

SD

rr

rr

on

p - n junction diode

TJ = 25 °C, IS = 0.37 A, VGS = 0 V

TJ = 25 °C, IF = 2.1 A, dI/dt = 100 A/μs

- 120 °C/W

VGS = 0 V, ID = 250 μA 500 - - V

VDS = VGS, ID = 250 μA 2.0 - 4.0 V

= ± 20 V - - ± 100 nA

GS

VDS = 500 V, VGS = 0 V - - 25

= 400 V, VGS = 0 V, TJ = 125 °C - - 250

DS

VDS = 50 V, ID = 1.3 A

VGS = 0 V,

V

= 25 V,

DS

f = 1.0 MHz

b

b

--3.0

1.5 - - S

- 360 -

--24

= 10 V ID = 2.1 A, VDS = 400 V

b

-8.0-

V

= 250 V, ID = 2.1 A,

DD

R

= 18 , RD = 120 

g

b

D

G

S

D

G

S

b

-8.6-

-4.0-

-6.0-

- - 0.37

--5.0

--1.6V

- 260 520 ns

b

- 0.70 1.4 μC

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

μA

pFOutput Capacitance C

nC Gate-Source Charge Q

ns

nH

A

www.vishay.com Document Number: 91135
2 S10-2463-Rev. C, 08-Nov-10

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

TA = 25 °C

TA = 150 °C

IRFD420, SiHFD420

Vishay Siliconix

Fig. 1 - Typical Output Characteristics, TA = 25 °C

Fig. 2 - Typical Output Characteristics, T

= 150 °C

A

Fig. 3 - Typical Transfer Characteristics

Fig. 4 - Normalized On-Resistance vs. Temperature

Document Number: 91135 www.vishay.com
S10-2463-Rev. C, 08-Nov-10 3