Vishay IRFD420, SiHFD420 Data Sheet

IRFD420, SiHFD420

Vishay Siliconix

Power MOSFET

PRODUCT SUMMARY

VDS (V)		500
RDS(on) ( )	VGS = 10 V		3.0
Qg (Max.) (nC)		24
Qgs (nC)		3.3
Qgd (nC)		13
Configuration		Single

D

HVMDIP

G

S

G

D S

N-Channel MOSFET

FEATURES

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated	Available
• For Automatic Insertion	RoHS*
• End Stackable	COMPLIANT
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinations on standard 0.1 inch pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 W.

ORDERING INFORMATION

	Package	HVMDIP
	Lead (Pb)-free	IRFD420PbF
		SiHFD420-E3
	SnPb	IRFD420
		SiHFD420

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

PARAMETER				SYMBOL	LIMIT	UNIT
Drain-Source Voltage				VDS	500	V
Gate-Source Voltage				VGS	± 20
Continuous Drain Current		VGS at 10 V	TA = 25 °C	ID	0.37
			TA = 100 °C		0.23	A
Pulsed Drain Currenta				IDM	3.0
Linear Derating Factor					0.0083	W/°C
Single Pulse Avalanche Energyb				EAS	51	mJ
Repetitive Avalanche Currenta				IAR	0.37	A
Repetitive Avalanche Energya				EAR	0.10	mJ
Maximum Power Dissipation		TA = 25 °C		PD	1.0	W
Peak Diode Recovery dV/dtc				dV/dt	3.5	V/ns
Operating Junction and Storage Temperature Range				TJ, Tstg	- 55 to + 150	°C
Soldering Recommendations (Peak Temperature)		for 10 s			300d

Notes

a.Repetitive rating; pulse width limited by maximum junction temperature.

b.VDD = 50 V, starting TJ = 25 °C, L = 40 mH, Rg = 25 , IAS = 1.5 A.

c.ISD 4.4 A, dI/dt 90 A/μs, VDD VDS, TJ 150 °C.

d.1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91135	www.vishay.com
S10-2463-Rev. C, 08-Nov-10	1

IRFD420, SiHFD420

Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER	SYMBOL	TYP.	MAX.	UNIT
Maximum Junction-to-Ambient	RthJA	-	120	°C/W

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER		SYMBOL	TEST CONDITIONS									MIN.	TYP.	MAX.	UNIT
Static
Drain-Source Breakdown Voltage		VDS	VGS = 0 V, ID = 250 μA									500	-	-	V
VDS Temperature Coefficient		VDS/TJ	Reference to 25 °C, ID = 1 mA									-	0.59	-	V/°C
Gate-Source Threshold Voltage		VGS(th)	VDS = VGS, ID = 250 μA									2.0	-	4.0	V
Gate-Source Leakage		IGSS		VGS = ± 20 V								-	-	± 100	nA
Zero Gate Voltage Drain Current		IDSS	VDS = 500 V, VGS = 0 V									-	-	25	μA
			VDS = 400 V, VGS = 0 V, TJ = 125 °C									-	-	250
Drain-Source On-State Resistance		RDS(on)	VGS = 10 V		ID = 0.22 Ab							-	-	3.0
Forward Transconductance		gfs	VDS = 50 V, ID = 1.3 Ab									1.5	-	-	S
Dynamic
Input Capacitance		Ciss			VGS = 0 V,							-	360	-
Output Capacitance		Coss													pF
					VDS = 25 V,							-	92	-
					f = 1.0 MHz
Reverse Transfer Capacitance		Crss										-	37	-
Total Gate Charge		Qg										-	-	24
Gate-Source Charge		Qgs	VGS = 10 V		ID = 2.1 A, VDS = 400 Vb							-	-	3.3	nC
Gate-Drain Charge		Qgd										-	-	13
Turn-On Delay Time		td(on)										-	8.0	-
Rise Time		tr	VDD = 250 V, ID = 2.1 A,									-	8.6	-	ns
Turn-Off Delay Time		td(off)	Rg = 18 , RD = 120 b									-	33	-
Fall Time		tf										-	16	-
Internal Drain Inductance		LD	Between lead,							D		-	4.0	-
			6 mm (0.25") from
			package and center of			G									nH
Internal Source Inductance		LS	die contact							S		-	6.0	-
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current		IS	MOSFET symbol								D	-	-	0.37
			showing the												A
			integral reverse			G
Pulsed Diode Forward Currenta		ISM	p - n junction diode								S	-	-	5.0
Body Diode Voltage		VSD	TJ = 25 °C, IS = 0.37 A, VGS = 0 Vb									-	-	1.6	V
Body Diode Reverse Recovery Time		trr	TJ = 25 °C, IF = 2.1 A, dI/dt = 100 A/μsb									-	260	520	ns
Body Diode Reverse Recovery Charge		Qrr										-	0.70	1.4	μC
Forward Turn-On Time		ton	Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes

a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b.Pulse width 300 μs; duty cycle 2 %.

www.vishay.com	Document Number: 91135
2	S10-2463-Rev. C, 08-Nov-10

IRFD420, SiHFD420

Vishay Siliconix

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

TA = 25 °C

Fig. 1 - Typical Output Characteristics, TA = 25 °C

Fig. 3 - Typical Transfer Characteristics

TA = 150 °C

Fig. 2 - Typical Output Characteristics, TA = 150 °C

Fig. 4 - Normalized On-Resistance vs. Temperature

Document Number: 91135	www.vishay.com
S10-2463-Rev. C, 08-Nov-10	3