Vishay IRFD320, SiHFD320 Data Sheet
www.vishay.com
HVMDIP
D
S
G
IRFD320, SiHFD320
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) 400
R
(Ω)V
DS(on)
Q
(Max.) (nC) 20
g
Q
(nC) 3.3
gs
Q
(nC) 11
gd
Configuration Single
= 10 V 1.8
GS
D
FEATURES
• Dynamic dV/dt rating
• Repetitive avalanche rated
• For automatic insertion
• End stackable
•Fast switching
• Ease of paralleling
• Simple drive requirements
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
G
S
N-Channel MOSFET
Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The 4 pin DIP package is a low cost machine-insertiable
case style which can be stacked in multiple combinations on
standard 0.1" pin centers. The dual drain servers as a
thermal link to the mounting surface for power dissipation
levels up to 1 W.
ORDERING INFORMATION
Package HVMDIP
Lead (Pb)-free
SnPb
IRFD320PbF
SiHFD320-E3
IRFD320
SiHFD320
RoHS
COMPLIANT
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate-Source Voltage V
T
= 25 °C
Continuous Drain Current V
Pulsed Drain Current
a
at 10 V
GS
A
= 100 °C 0.31
A
DS
± 20
GS
I
D
IDM 3.9
Linear Derating Factor 0.0083 W/°C
Single Pulse Avalanche Energy
Avalanche Current
a
Repetitive Avalanche Energy
Maximum Power Dissipation T
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range T
Soldering Recommendations (Peak Temperature)
b
a
= 25 °C P
c
d
A
for 10 s 300
E
AS
I
AR
E
AR
D
dV/dt 4.0 V/ns
, T
J
stg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
= 50 V, starting TJ = 25 °C, L = 21 mH, Rg = 25 Ω, IAS = 2.0 A (see fig. 12).
DD
c. I
≤ 2.0 A, dI/dt ≤ 40 A/μs, VDD ≤ VDS, TJ ≤ 150 °C.
SD
d. 1.6 mm from case.
S14-2355-Rev. D, 08-Dec-14
1
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
400
0.49
48 mJ
0.49 A
0.10 mJ
1.0 W
-55 to +150
Document Number: 91134
V
AT
°C
IRFD320, SiHFD320
D
S
G
S
D
G
www.vishay.com
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient R
thJA
- 120 °C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
V
Temperature Coefficient ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.51 - V/°C
DS
Gate-Source Threshold Voltage V
Gate-Source Leakage I
Zero Gate Voltage Drain Current I
Drain-Source On-State Resistance R
Forward Transconductance g
DS
GS(th)
V
GSS
DSS
VGS = 10 V ID = 0.21 A
DS(on)
fs
Dynamic
Input Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Q
Gate-Drain Charge Q
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Internal Drain Inductance L
iss
- 120 -
oss
-47-
rss
g
--3.3
gs
--11
gd
d(on)
r
-30-
d(off)
-13-
f
D
V
Between lead,
6 mm (0.25") from
package and center of
Internal Source Inductance L
S
die contact
VGS = 0 V, ID = 250 μA 400 - - V
VDS = VGS, ID = 250 μA 2.0 - 4.0 V
= ± 20 V - - ± 100 nA
GS
VDS = 400 V, VGS = 0 V - - 25
V
= 320 V, VGS = 0 V, TJ = 125 °C - - 250
DS
b
VDS = 50 V, ID = 1.2 A 1.7 - - S
VGS = 0 V,
V
= 25 V,
DS
f = 1.0 MHz, see fig. 5
= 2.0 A, VDS = 320 V,
I
= 10 V
GS
V
R
= 18 Ω, RD = 56 Ω, see fig. 10
g
D
see fig. 6 and 13
= 200 V, ID = 3.3 A,
DD
b
b
Vishay Siliconix
μA
--1.8Ω
- 410 -
pFOutput Capacitance C
--20
nC Gate-Source Charge Q
-10-
-14-
-4.0-
-6.0-
ns
nH
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
Pulsed Diode Forward Current
a
Body Diode Voltage V
Body Diode Reverse Recovery Time t
Body Diode Reverse Recovery Charge Q
Forward Turn-On Time t
S
MOSFET symbol
showing the
integral reverse
I
SM
SD
rr
rr
on
p - n junction diode
TJ = 25 °C, IS = 0.49 A, VGS = 0 V
b
TJ = 25 °C, IF = 3.3 A, dI/dt = 100 A/μs
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
- - 0.49
--3.9
--1.6V
- 270 600 ns
b
-1.43.0μC
A
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %.
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: hvm@vishay.com
S14-2355-Rev. D, 08-Dec-14
2
Document Number: 91134
www.vishay.com
TA = 25 °C
TA = 150 °C
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
IRFD320, SiHFD320
Vishay Siliconix
Fig. 1 - Typical Output Characteristics, TA = 25 °C
10
1
0.1
, Drain-to-Source Current (A)
D
I
0.01
45678910
TJ= 25 °C
TJ= 150 °C
VDS= 26.2V
VGS, Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Output Characteristics, T
S14-2355-Rev. D, 08-Dec-14
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
= 150 °C
A
Fig. 4 - Normalized On-Resistance vs. Temperature
3
For technical questions, contact: hvm@vishay.com
Document Number: 91134
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