Vishay IRFD210, SiHFD210 Data Sheet

IRFD210, SiHFD210

Vishay Siliconix

Power MOSFET

PRODUCT SUMMARY

VDS (V)		200
RDS(on) ( )	VGS = 10 V		1.5
Qg (Max.) (nC)		8.2
Qgs (nC)		1.8
Qgd (nC)		4.5
Configuration		Single

D

HVMDIP

G

S

G

D S

N-Channel MOSFET

FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated	Available
• For Automatic Insertion	RoHS*
	COMPLIANT

•End Stackable

•Fast Switching

•Ease of Paralleling

•Simple Drive Requirements

•Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinations on standard 0.1" pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 W.

ORDERING INFORMATION
Package				HVMDIP
Lead (Pb)-free				IRFD210PbF
				SiHFD210-E3
SnPb				IRFD210
				SiHFD210
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER						SYMBOL	LIMIT		UNIT
Drain-Source Voltage						VDS	200		V
Gate-Source Voltage						VGS	± 20
Continuous Drain Current		VGS at 10 V		TA = 25 °C		ID	0.60
				TA = 100 °C			0.38		A
Pulsed Drain Currenta						IDM	4.8
Linear Derating Factor							0.0083		W/°C
Single Pulse Avalanche Energyb						EAS	79		mJ
Repetitive Avalanche Currenta						IAR	0.60		A
Repetitive Avalanche Energya						EAR	0.10		mJ
Maximum Power Dissipation		TA = 25 °C				PD	1.0		W
Peak Diode Recovery dV/dtc						dV/dt	5.0		V/ns
Operating Junction and Storage Temperature Range						TJ, Tstg	- 55 to + 150		°C
Soldering Recommendations (Peak Temperature)		for 10 s					300d
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 °C, L = 82 mH, Rg = 25 , IAS = 1.2 A (see fig. 12).
c. ISD 3.3 A, dI/dt 70 A/μs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91129								www.vishay.com
S10-2462-Rev. C, 08-Nov-10								1

IRFD210, SiHFD210

Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER	SYMBOL	TYP.	MAX.	UNIT
Maximum Junction-to-Ambient	RthJA	-	120	°C/W

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER		SYMBOL	TEST CONDITIONS									MIN.	TYP.	MAX.	UNIT
Static
Drain-Source Breakdown Voltage		VDS	VGS = 0 V, ID = 250 μA									200	-	-	V
VDS Temperature Coefficient		VDS/TJ	Reference to 25 °C, ID = 1 mA									-	0.30	-	V/°C
Gate-Source Threshold Voltage		VGS(th)	VDS = VGS, ID = 250 μA									2.0	-	4.0	V
Gate-Source Leakage		IGSS			VGS = ± 20 V							-	-	± 100	nA
Zero Gate Voltage Drain Current		IDSS	VDS = 200 V, VGS = 0 V									-	-	25	μA
			VDS = 160 V, VGS = 0 V, TJ = 125 °C									-	-	250
Drain-Source On-State Resistance		RDS(on)	VGS = 10 V			ID = 0.36 Ab						-	-	1.5
Forward Transconductance		gfs	VDS = 50 V, ID = 0.36 Ab									0.10	-	-	S
Dynamic
Input Capacitance		Ciss			VGS = 0 V							-	140	-
Output Capacitance		Coss													pF
					VDS = 25 V							-	53	-
			f = 1.0 MHz, see fig. 5
Reverse Transfer Capacitance		Crss										-	15	-
Total Gate Charge		Qg										-	-	8.2
					ID = 3.3 A, VDS = 160 V
Gate-Source Charge		Qgs	VGS = 10 V									-	-	1.8	nC
					see fig. 6 and 13b
Gate-Drain Charge		Qgd										-	-	4.5
Turn-On Delay Time		td(on)										-	8.2	-
Rise Time		tr	VDD	= 100 V, ID = 3.3 A								-	17	-	ns
Turn-Off Delay Time		td(off)	Rg = 24 , RD = 30 , see fig. 10b									-	14	-
Fall Time		tf										-	8.9	-
Internal Drain Inductance		LD	Between lead,							D		-	4.0	-
			6 mm (0.25") from
			package and center of			G									nH
Internal Source Inductance		LS	die contact							S		-	6.0	-
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current		IS	MOSFET symbol								D	-	-	0.60
			showing the												A
			integral reverse			G
Pulsed Diode Forward Currenta		ISM	p - n junction diode								S	-	-	4.8
Body Diode Voltage		VSD	TJ = 25 °C, IS = 0.60 A, VGS = 0 Vb									-	-	2.0	V
Body Diode Reverse Recovery Time		trr	TJ = 25 °C, IF = 3.3 A, dI/dt = 100 A/μsb									-	150	310	ns
Body Diode Reverse Recovery Charge		Qrr										-	0.60	1.4	μC
Forward Turn-On Time		ton	Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes

a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)

b.Pulse width 300 μs; duty cycle 2 %

www.vishay.com	Document Number: 91129
2	S10-2462-Rev. C, 08-Nov-10

IRFD210, SiHFD210

Vishay Siliconix

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

TA = 25 °C

Fig. 1 - Typical Output Characteristics, TA = 25 °C

Fig. 3 - Typical Transfer Characteristics

TA = 150 °C

Fig. 2 - Typical Output Characteristics, TA = 150 °C

Fig. 4 - Normalized On-Resistance vs. Temperature

Document Number: 91129	www.vishay.com
S10-2462-Rev. C, 08-Nov-10	3