Power MOSFET
N-Channel MOSFET
G
D
S
HVMDIP
D
S
G
Available
RoHS*
COMPLIANT
IRFD123, SiHFD123
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) 100
R
()V
DS(on)
Q
(Max.) (nC) 16
g
Q
(nC) 4.4
gs
Q
(nC) 7.7
gd
Configuration Single
= 10 V 0.27
GS
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• For Automatic Insertion
•End Stackable
• 175 °C Operating Temperature
•Fast Switching
• Ease of Paralleling
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The 4 pin DIP package is a low cost machine-insertable
case style which can be stacked in multiple combinations on
standard 0.1" pin centers. The dual drain serves as a thermal
link to the mounting surface for power dissipation levels up
to 1 W.
ORDERING INFORMATION
Package HVMDIP
Lead (Pb)-free
SnPb
IRFD123PbF
SiHFD123-E3
IRFD123
SiHFD123
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate-Source Voltage V
T
= 25 °C
Continuous Drain Current V
Pulsed Drain Current
a
at 10 V
GS
A
= 100 °C 0.94
A
DS
± 20
GS
I
D
IDM 10
Linear Derating Factor 0.0083 W/°C
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation T
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range T
b
a
a
= 25 °C P
c
A
E
AS
I
AR
E
AR
D
dV/dt 5.5 V/ns
, T
J
stg
Soldering Recommendations (Peak Temperature) for 10 s 300
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
= 25 V, starting TJ = 25 °C, L = 22 mH, Rg = 25 , IAS = 2.6 A (see fig. 12).
DD
c. I
9.2 A, dI/dt 110 A/μs, VDD VDS, TJ 175 °C.
SD
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 90161 www.vishay.com
S10-2466-Rev. C, 25-Oct-10 1
100
1.3
100 mJ
1.3 A
0.13 mJ
1.3 W
- 55 to + 175
d
V
AT
°C
IRFD123, SiHFD123
S
D
G
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient R
thJA
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
V
Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA - 0.13 - V/°C
DS
Gate-Source Threshold Voltage V
Gate-Source Leakage I
Zero Gate Voltage Drain Current I
Drain-Source On-State Resistance R
Forward Transconductance g
Dynamic
Input Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Q
Gate-Drain Charge Q
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Internal Drain Inductance L
Internal Source Inductance L
Drain-Source Body Diode Characteristics
DS
GS(th)
V
GSS
DSS
VGS = 10 V ID = 0.78 A
DS(on)
fs
iss
- 150 -
oss
-34-
rss
g
--4.4
gs
--7.7
gd
d(on)
r
-18-
d(off)
-17-
f
D
V
GS
R
Between lead,
6 mm (0.25") from
package and center of
S
die contact
- 120 °C/W
VGS = 0 V, ID = 250 μA 100 - - V
VDS = VGS, ID = 250 μA 2.0 - 4.0 V
= ± 20 V - - ± 100 nA
GS
VDS = 100 V, VGS = 0 V - - 25
V
= 80 V, VGS = 0 V, TJ = 150 °C - - 250
DS
VDS = 50 V, ID = 0.78 A
VGS = 0 V
V
= 25 V
DS
f = 1.0 MHz, see fig. 5
b
b
- - 0.27
0.80 - - S
- 360 -
--16
= 9.2 A, VDS = 80 V
I
= 10 V
D
see fig. 6 and 13
b
-6.8-
V
= 50 V, ID = 9.2 A
DD
= 18 , RD = 5.2 , see fig. 10
g
G
b
D
S
-27-
-4.0-
-6.0-
μA
pFOutput Capacitance C
nC Gate-Source Charge Q
ns
nH
Continuous Source-Drain Diode Current I
Pulsed Diode Forward Current
a
Body Diode Voltage V
Body Diode Reverse Recovery Time t
Body Diode Reverse Recovery Charge Q
Forward Turn-On Time t
S
MOSFET symbol
showing the
integral reverse
I
SM
SD
rr
rr
on
p - n junction diode
TJ = 25 °C, IS = 1.3 A, VGS = 0 V
b
TJ = 25 °C, IF = 9.2 A, dI/dt = 100 A/μs
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
--1.3
--10
--2.5V
- 130 260 ns
b
- 0.65 1.3 μC
A
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
www.vishay.com Document Number: 90161
2 S10-2466-Rev. C, 25-Oct-10
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
TA = 25 °C
TA = 175 °C
IRFD123, SiHFD123
Vishay Siliconix
Fig. 1 - Typical Output Characteristics, TA = 25 °C
Fig. 2 - Typical Output Characteristics, T
= 175 °C
A
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 90161 www.vishay.com
S10-2466-Rev. C, 25-Oct-10 3
IRFD123, SiHFD123
TA = 25 °C
T
J
= 175 °C
SINGLE PULSE
TA = 25 °C
T
J
= 175 °C
SINGLE PULSE
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 8 - Maximum Safe Operating Area
www.vishay.com Document Number: 90161
4 S10-2466-Rev. C, 25-Oct-10
IRFD123, SiHFD123
TA, Ambient Temperature (°C)
I
D
, Drain Current (A)
V
DS
90 %
10 %
V
GS
t
d(on)
t
r
t
d(off)
t
f
Thermal Response (Z
thJA
)
t1, Rectangular Pulse Duration (s)t1, Rectangular Pulse Duration (s)
Vishay Siliconix
R
D.U.T.
D
+
-
V
DS
V
GS
R
g
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
Fig. 10a - Switching Time Test Circuit
V
DD
Fig. 9 - Maximum Drain Current vs. Ambient Temperature
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig. 10b - Switching Time Waveforms
Document Number: 90161 www.vishay.com
S10-2466-Rev. C, 25-Oct-10 5
IRFD123, SiHFD123
D.U.T.
3 mA
V
GS
V
DS
I
G
I
D
0.3 µF
0.2 µF
50 kΩ
12 V
Current regulator
Current sampling resistors
Same type as D.U.T.
+
-
Vishay Siliconix
V
Var y tp to obtain
required I
AS
DS
t
p
R
g
D.U.T.
I
AS
+
V
DD
-
V
DS
10 V
L
t
p
0.01 Ω
I
AS
Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms
V
DS
V
DD
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Q
G
Q
GD
Charge
10 V
Q
GS
V
G
Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit
www.vishay.com Document Number: 90161
6 S10-2466-Rev. C, 25-Oct-10
P.W.
Period
dI/dt
Diode recovery
dV/dt
Ripple ≤ 5 %
Body diode forward drop
Re-applied
voltage
Reverse
recovery
current
Body diode forward
current
V
GS
= 10 Va
I
SD
Driver gate drive
D.U.T. l
SD
waveform
D.U.T. V
DS
waveform
Inductor current
D =
P.W.
Period
+
-
+
+
+
-
-
-
Peak Diode Recovery dV/dt Test Circuit
V
DD
• dV/dt controlled by R
g
• Driver same type as D.U.T.
•
I
SD
controlled by duty factor “D”
• D.U.T. - device under test
D.U.T.
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
R
g
Note
a. V
GS
= 5 V for logic level devices
V
DD
IRFD123, SiHFD123
Vishay Siliconix
Fig. 14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?90161
Document Number: 90161 www.vishay.com
S10-2466-Rev. C, 25-Oct-10 7
.
HVM DIP (High voltage)
Package Information
Vishay Siliconix
0.248 [6.29]
0.240 [6.10]
0.043 [1.09]
0.035 [0.89]
0.094 [2.38]
0.086 [2.18]
0.017 [0.43]
0.013 [0.33]
0° to 15°
2 x
E min.
E max.
0.133 [3.37]
0.125 [3.18]
0.045 [1.14]
2 x
0.035 [0.89]
A
0.100 [2.54] typ.
L
0.197 [5.00]
0.189 [4.80]
0.160 [4.06]
0.140 [3.56]
0.024 [0.60]
0.020 [0.51]
0.180 [4.57]
0.160 [4.06]
4 x
INCHES MILLIMETERS
DIM. MIN. MAX. MIN. MAX.
A 0.310 0.330 7.87 8.38
E 0.300 0.425 7.62 10.79
L 0.270 0.290 6.86 7.36
ECN: X10-0386-Rev. B, 06-Sep-10
DWG: 5974
Note
1. Package length does not include mold flash, protrusions or gate burrs. Package width does not include interlead flash or protrusions.
Document Number: 91361 www.vishay.com
Revision: 06-Sep-10 1
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Revision: 13-Jun-16
1
Document Number: 91000
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