Vishay IRFD020, SiHFD020 Data Sheet

N-Channel MOSFET

G

D

S

HVMDIP

D

S

G

Available

RoHS*

COMPLIANT

Power MOSFET

IRFD020, SiHFD020

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) 50

R

()V

DS(on)

Q

(Max.) (nC) 24

g

Q

(nC) 7.1

gs

Q

(nC) 7.1

gd

Configuration Single

= 10 V 0.10

GS

FEATURES

• For Automatic Insertion

• Compact, End Stackable

•Fast Switching

• Ease of Paralleling

• Excellent Temperature Stability

• Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

The HVMDIP technology is the key to Vishay’s advanced
line of power MOSFET transistors. The efficient geometry
and unique processing of the HVMDIP design achieves
very low on-state resistance combined with high
transconductance and extreme device ruggedness.
HVMDIPs feature all of the established advantages of
MOSFETs such as voltage control, very fast switching, ease
of paralleling, and temperature stability of the electrical
parameters.
The HVMDIP 4 pin, dual-in-line package brings the
advantages of HVMDIPs to high volume applications where
automatic PC board insertion is desireable, such as circuit
boards for computers, printers, telecommunications
equipment, and consumer products. Their compatibility with
automatic insertion equipment, low-profile and end
stackable features represent the stat-of-the-art in power
device packaging.

ORDERING INFORMATION

Package HVMDIP

Lead (Pb)-free

SnPb

IRFD020PbF
SiHFD020-E3
IRFD020
SiHFD020

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage

Gate-Source Voltage V

Continuous Drain Current V

Pulsed Drain Current

Linear Derating Factor 0.0080 W/°C

Inductive Current, Clamped L = 100 μH I

Unclamped Inductive Current (Avalanche Current)

Maximum Power Dissipation T

Operating Junction and Storage Temperature Range T

Soldering Recommendations (Peak Temperature) for 10 s 300

Notes

a. T

= 25 °C to 150 °C

J

b. Repetitive rating; pulse width limited by maximum junction temperature.
c. V

= 25 V, starting TJ = 25 °C, L = 100 μH, Rg = 25 

DD

d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91465 www.vishay.com
S11-0915-Rev. A, 16-May-11 1

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

a

T

= 25 °C

at 10 V

GS

b

c

This document is subject to change without notice.

C

= 100 °C 1.5

C

= 25 °C P

C

V

DS

± 20

GS

I

D

IDM 19

LM

I

L

D

, T

J

stg

- 55 to + 150

50

2.4

19

2.2

1.0 W

d

www.vishay.com/doc?91000

V

AT

A

°C

IRFD020, SiHFD020

Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient R

thJA

SPECIFICATIONS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

Gate-Source Threshold Voltage V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

On-State Drain Current

Drain-Source On-State Resistance

Forward Transconductance

b

b

R

b

Dynamic

Input Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Gate-Drain Charge Q

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Internal Drain Inductance L

Internal Source Inductance L

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

Pulsed Diode Forward Current

Body Diode Voltage

a

c

Body Diode Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

Forward Turn-On Time t

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.
c. V

= 25 V, starting TJ = 25 °C, L = 100 μH, Rg = 25 

DD

DS

GS(th)

V

GSS

DSS

I

V

D(on)

VGS = 10 V ID = 1.4 A - 0.080 0.10 

DS(on)

g

fs

iss

- 260 -

oss

-44-

rss

g

-4.77.1

gs

-4.77.1

gd

d(on)

r

-1624

d(off)

-2639

f

D

= max. rating x 0.8, VGS = 0 V, TC = 125

V

DS

GS

V

GS

Between lead,
6 mm (0.25") from
package and center of

S

S

die contact

MOSFET symbol
showing the

integral reverse

I

SM

V

SD

rr

rr

on

p - n junction diode

TJ = 25 °C, IF = 15 A, dI/dt = 100 A/μs

- 120 °C/W

VGS = 0 V, ID = 250 μA 50 - - V

VDS = VGS, ID = 250 μA 2.0 - 4.0 V

= ± 20 V - - ± 500 nA

GS

VDS = max. rating, VGS = 0 V - - 250

- - 1000

= 10 V VDS > I

D(on)

x R

max. 2.4 - - A

DS(on)

VDS = 20 V, ID = 7.5 A 4.9 7.3 - S

VGS = 0 V,

V

= 25 V,

DS

f = 1.0 MHz

- 400 -

-1624

= 15 A,

I

= 10 V

D

V

= max. rating x 0.8

DS

-8.713

V

= 25 V, ID = 15 A,

DD

R

= 18 , RD = 1.7 

g

D

G

S

D

G

S

-5583

-4.0-

-6.0-

--2.4

--19

TC = 25 °C, IS = 2.4 A, VGS = 0 V - - 1.4 V

57 130 310 ns

0.17 0.34 0.85 μC

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

μA

pFOutput Capacitance C

nC Gate-Source Charge Q

ns

nH

A

www.vishay.com Document Number: 91465
2 S11-0915-Rev. A, 16-May-11

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

IRFD020, SiHFD020

Vishay Siliconix

Fig. 1 - Typical Output Characteristics

Fig. 2 - Typical Output Characteristics

Fig. 3 - Typical Transfer Characteristics

Fig. 4 - Normalized On-Resistance vs. Temperature

Document Number: 91465 www.vishay.com
S11-0915-Rev. A, 16-May-11 3

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

This document is subject to change without notice.

www.vishay.com/doc?91000

IRFD020, SiHFD020

Vishay Siliconix

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

Fig. 7 - Typical Source-Drain Diode Forward Voltage

Fig. 8 - Maximum Safe Operating Area

www.vishay.com Document Number: 91465
4 S11-0915-Rev. A, 16-May-11

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

This document is subject to change without notice.

www.vishay.com/doc?91000

IRFD020, SiHFD020

Vishay Siliconix

Fig. 9 - Maximum Drain Current vs. Ambient Temperature

Fig. 10 - Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

Fig. 11 - Typical Transconductance vs. Drain Current Fig. 12 - Breakdown Voltage vs. Temperature

Document Number: 91465 www.vishay.com
S11-0915-Rev. A, 16-May-11 5

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

This document is subject to change without notice.

www.vishay.com/doc?91000

IRFD020, SiHFD020

Vishay Siliconix

Fig. 15a - Unclamped Inductive Load Test Waveforms

Fig. 13 - Typical on-Resistance vs. Drain Current

Fig. 14a - Clamped Inductive Test Circuit

Fig. 14b - Clamped Inductive Waveforms

Fig. 16 - Switching Time Test Circuit

Fig. 17 - Gate Charge Test Circuit

Fig. 15a - Unclamped Inductive Test Circuit

www.vishay.com Document Number: 91465
6 S11-0915-Rev. A, 16-May-11

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

This document is subject to change without notice.

www.vishay.com/doc?91000

IRFD020, SiHFD020

Vishay Siliconix

Fig. 18 - Typical Time to Accumulated 1 % Gate Failure Fig. 19 - Typical High Temperature Reverse Bias (HTRB) Failure

Rate

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91465

Document Number: 91465 www.vishay.com
S11-0915-Rev. A, 16-May-11 7

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

.

This document is subject to change without notice.

www.vishay.com/doc?91000

HVM DIP (High voltage)

Package Information

Vishay Siliconix

0.248 [6.29]

0.240 [6.10]

0.043 [1.09]

0.035 [0.89]

0.094 [2.38]

0.086 [2.18]

0.017 [0.43]

0.013 [0.33]

0° to 15°
2 x

E min.

E max.

0.133 [3.37]

0.125 [3.18]

0.045 [1.14]

2 x

0.035 [0.89]

A

0.100 [2.54] typ.

L

0.197 [5.00]

0.189 [4.80]

0.160 [4.06]

0.140 [3.56]

0.024 [0.60]

0.020 [0.51]

0.180 [4.57]

0.160 [4.06]

4 x

INCHES MILLIMETERS

DIM. MIN. MAX. MIN. MAX.

A 0.310 0.330 7.87 8.38

E 0.300 0.425 7.62 10.79

L 0.270 0.290 6.86 7.36

ECN: X10-0386-Rev. B, 06-Sep-10
DWG: 5974

Note

1. Package length does not include mold flash, protrusions or gate burrs. Package width does not include interlead flash or protrusions.

Document Number: 91361 www.vishay.com
Revision: 06-Sep-10 1

Legal Disclaimer Notice

www.vishay.com

Vishay

Disclaimer



ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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including but not limited to the warranty expressed therein.

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Revision: 13-Jun-16

1

Document Number: 91000