Vishay IRFBF30S, SiHFBF30S Data Sheet

D2PAK (TO-263)
G
D
S
Power MOSFET
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) 900
R
()V
DS(on)
Q
(Max.) (nC) 78
g
Q
(nC) 10
gs
Q
(nC) 42
gd
Configuration Single
= 10 V 3.7
GS
D
FEATURES
Halogen-free According to IEC 61249-2-21 Definition
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
•Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation MOSFETs from Vishay provide the designer with the best combination of fast switching,
G
ruggedized device design, low on-resistance and cost-effectiveness.
2
PAK (TO-263) package is universially preferred for all
The D commercial-industrial applications at power dissipation
S
N-Channel MOSFET
levels to approximately 50 W. The low thermal resistance and low package cost of the D its wide acceptance throughout the industry.
ORDERING INFORMATION
Package D2PAK (TO-263) Lead (Pb)-free and Halogen-free SiHFBF30S-GE3
Lead (Pb)-free
IRFBF30SPbF SiHFBF30S-E3
2
PAK (TO-263) contribute to
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. V c. I d. 1.6 mm from case.
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate-Source Voltage V
T
= 25 °C
Continuous Drain Current V
Pulsed Drain Current
a
at 10 V
GS
C
T
= 100 °C 2.3
C
DS
± 20
GS
I
D
IDM 14
Linear Derating Factor 1.0 W/°C
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation T
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range T
b
a
a
= 25 °C P
c
C
E
AS
I
AR
E
AR
D
dV/dt 1.5 V/ns
, T
J
stg
Soldering Recommendations (Peak Temperature) for 10 s 300
= 50 V, starting TJ = 25 °C, L = 36 mH, Rg = 25 , IAS = 3.6 A (see fig. 12).
DD
3.6 A, dI/dt 70 A/μs, VDD 600, TJ 150 °C.
SD
900
3.6
250 mJ
3.6 A
13 mJ
125 W
- 55 to + 150
d
V
A
°C
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91389
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S11-1055-Rev. C, 30-May-11 1
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
This document is subject to change without notice.
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Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient R
a
Maximum Junction-to-Case (Drain) R
thJA
R
thJA
thJC
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
V
Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA - 1.1 - V/°C
DS
Gate-Source Threshold Voltage V
Gate-Source Leakage I
Zero Gate Voltage Drain Current I
Drain-Source On-State Resistance R
Forward Transconductance g
DS
GS(th)
V
GSS
DSS
VGS = 10 V ID = 2.2 A
DS(on)
fs
Dynamic
Input Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Q
Gate-Drain Charge Q
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Internal Drain Inductance L
iss
- 320 -
oss
- 200 -
rss
g
--10
gs
--42
gd
d(on)
r
-90-
d(off)
-30-
f
D
V
Between lead, 6 mm (0.25") from package and center of
Internal Source Inductance L
S
die contact
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
Pulsed Diode Forward Current
a
Body Diode Voltage V
Body Diode Reverse Recovery Time t
Body Diode Reverse Recovery Charge Q
Forward Turn-On Time t
S
I
SM
SD
rr
rr
on
MOSFET symbol showing the integral reverse p - n junction diode
TJ = 25 °C, IF = 3.6 A, dI/dt = 100 A/μs
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width  300 μs; duty cycle  2 %.
www.vishay.com Document Number: 91389 2 S11-1055-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
VGS = 0, ID = 250 μA 900 - - V
VDS = VGS, ID = 250 μA 2.0 - 4.0 V
VDS = 900 V, VGS = 0 V - - 100
V
= 720 V, VGS = 0 V, TJ = 125 °C - - 500
DS
VDS = 100 V, ID = 2.2 A
f = 1.0 MHz, see fig. 5
= 10 V
GS
V
= 450 V, ID = 3.6 A,
DD
R
= 12 , RD = 120 , see fig. 10
g
TJ = 25 °C, IS = 3.6 A, VGS = 0 V
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
-62
-40
°C/WMaximum Junction-to-Ambient (PCB Mount)
-1.0
= ± 20 V - - ± 100 nA
GS
VGS = 0 V,
V
= 25 V,
DS
b
b
--3.7
2.3 - - S
- 1200 -
--78
= 3.6 A, VDS = 360 V,
I
D
see fig. 6 and 13
b
-14-
-25-
b
D
G
S
D
G
S
b
-4.5-
-7.5-
--3.6
--14
--1.8V
- 430 650 ns
b
-1.42.C
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μA
pFOutput Capacitance C
nC Gate-Source Charge Q
ns
nH
A
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Vishay Siliconix
Fig. 1 - Typical Output Characteristics, TC = 25 °C
Fig. 2 -Typical Output Characteristics, T
= 150 °C
C
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91389 www.vishay.com S11-1055-Rev. C, 30-May-11 3
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
This document is subject to change without notice.
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Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 8 - Maximum Safe Operating Area
www.vishay.com Document Number: 91389 4 S11-1055-Rev. C, 30-May-11
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
This document is subject to change without notice.
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V
DS
90 %
10 %
V
GS
t
d(on)
t
r
t
d(off)
t
f
R
g
I
AS
0.01 Ω
t
p
D.U.T
L
V
DS
+
-
V
DD
A
10 V
Var y tp to obtain required I
AS
I
AS
V
DS
V
DD
V
DS
t
p
Vishay Siliconix
R
D.U.T.
D
+
V
-
DD
V
DS
V
GS
R
g
10 V
Pulse width 1 µs Duty factor 0.1 %
Fig. 10a - Switching Time Test Circuit
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig. 10b - Switching Time Waveforms
Document Number: 91389 www.vishay.com S11-1055-Rev. C, 30-May-11 5
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
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Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms
D.U.T.
3 mA
V
GS
V
DS
I
G
I
D
0.3 µF
0.2 µF
50 kΩ
12 V
Current regulator
Current sampling resistors
Same type as D.U.T.
+
-
Vishay Siliconix
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Q
10 V
V
Q
GS
G
G
Q
GD
Charge
Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit
www.vishay.com Document Number: 91389 6 S11-1055-Rev. C, 30-May-11
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THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
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P.W.
Period
dI/dt
Diode recovery
dV/dt
Ripple 5 %
Body diode forward drop
Re-applied voltage
Reverse recovery current
Body diode forward
current
V
GS
= 10 Va
I
SD
Driver gate drive
D.U.T. l
SD
waveform
D.U.T. V
DS
waveform
Inductor current
D =
P.W.
Period
+
-
+
+
+
-
-
-
Peak Diode Recovery dV/dt Test Circuit
V
DD
dV/dt controlled by R
g
Driver same type as D.U.T.
I
SD
controlled by duty factor “D”
D.U.T. - device under test
D.U.T.
Circuit layout considerations
Low stray inductance
Ground plane
Low leakage inductance
current transformer
R
g
Note
a. V
GS
= 5 V for logic level devices
V
DD
Vishay Siliconix
Fig. 9 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91389
Document Number: 91389 www.vishay.com S11-1055-Rev. C, 30-May-11 7
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
.
This document is subject to change without notice.
www.vishay.com/doc?91000
RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead
0.420
(10.668)
0.635 (16.129)
0.355
AN826
Vishay Siliconix
(9.017)
Return to Index
0.135
(3.429)
0.200
(5.080)
Recommended Minimum Pads
Dimensions in Inches/(mm)
0.050
(1.257)
0.145
(3.683)
Document Number: 73397 11-Apr-05
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1
Legal Disclaimer Notice
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Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
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Revision: 13-Jun-16
1
Document Number: 91000
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