Vishay IRFBF30S, SiHFBF30S Data Sheet

IRFBF30S, SiHFBF30S

Vishay Siliconix

Power MOSFET

PRODUCT SUMMARY

VDS (V)		900
RDS(on) ( )	VGS = 10 V		3.7
Qg (Max.) (nC)		78
Qgs (nC)		10
Qgd (nC)		42
Configuration		Single

D

FEATURES

•Halogen-free According to IEC 61249-2-21 Definition

•Dynamic dV/dt Rating

•Repetitive Avalanche Rated

•Fast Switching

•Ease of Paralleling

•Simple Drive Requirements

•Compliant to RoHS Directive 2002/95/EC

D2PAK (TO-263)

G

G D

S S

N-Channel MOSFET

DESCRIPTION

Third generation MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The D2PAK (TO-263) package is universially preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the D2PAK (TO-263) contribute to its wide acceptance throughout the industry.

ORDERING INFORMATION

	Package	D2PAK (TO-263)
	Lead (Pb)-free and Halogen-free	SiHFBF30S-GE3
	Lead (Pb)-free	IRFBF30SPbF
		SiHFBF30S-E3

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER				SYMBOL	LIMIT	UNIT
Drain-Source Voltage				VDS	900	V
Gate-Source Voltage				VGS	± 20
Continuous Drain Current		VGS at 10 V	TC = 25 °C	ID	3.6
			TC = 100 °C		2.3	A
Pulsed Drain Currenta				IDM	14
Linear Derating Factor					1.0	W/°C
Single Pulse Avalanche Energyb				EAS	250	mJ
Repetitive Avalanche Currenta				IAR	3.6	A
Repetitive Avalanche Energya				EAR	13	mJ
Maximum Power Dissipation		TC = 25 °C		PD	125	W
Peak Diode Recovery dV/dtc				dV/dt	1.5	V/ns
Operating Junction and Storage Temperature Range				TJ, Tstg	- 55 to + 150	°C
Soldering Recommendations (Peak Temperature)		for 10 s			300d

Notes

a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b.VDD = 50 V, starting TJ = 25 °C, L = 36 mH, Rg = 25 , IAS = 3.6 A (see fig. 12).

c.ISD 3.6 A, dI/dt 70 A/μs, VDD 600, TJ 150 °C.

d.1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91389	www.vishay.com
S11-1055-Rev. C, 30-May-11	1

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRFBF30S, SiHFBF30S

Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER	SYMBOL	TYP.	MAX.	UNIT
Maximum Junction-to-Ambient	RthJA	-	62
Maximum Junction-to-Ambient (PCB Mount)a	RthJA	-	40	°C/W
Maximum Junction-to-Case (Drain)	RthJC	-	1.0

Note

a. When mounted on 1" square PCB (FR-4 or G-10 material).

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER		SYMBOL	TEST CONDITIONS									MIN.	TYP.	MAX.	UNIT
Static
Drain-Source Breakdown Voltage		VDS	VGS = 0, ID = 250 μA									900	-	-	V
VDS Temperature Coefficient		VDS/TJ	Reference to 25 °C, ID = 1 mA									-	1.1	-	V/°C
Gate-Source Threshold Voltage		VGS(th)	VDS = VGS, ID = 250 μA									2.0	-	4.0	V
Gate-Source Leakage		IGSS		VGS = ± 20 V								-	-	± 100	nA
Zero Gate Voltage Drain Current		IDSS	VDS = 900 V, VGS = 0 V									-	-	100	μA
			VDS = 720 V, VGS = 0 V, TJ = 125 °C									-	-	500
Drain-Source On-State Resistance		RDS(on)	VGS = 10 V			ID = 2.2 Ab						-	-	3.7
Forward Transconductance		gfs	VDS = 100 V, ID = 2.2 Ab									2.3	-	-	S
Dynamic
Input Capacitance		Ciss			VGS = 0 V,							-	1200	-
Output Capacitance		Coss			VDS = 25 V,							-	320	-	pF
			f = 1.0 MHz, see fig. 5
Reverse Transfer Capacitance		Crss										-	200	-
Total Gate Charge		Qg			ID = 3.6 A, VDS = 360 V,							-	-	78
Gate-Source Charge		Qgs	VGS = 10 V									-	-	10	nC
					see fig. 6 and 13b
Gate-Drain Charge		Qgd										-	-	42
Turn-On Delay Time		td(on)										-	14	-
Rise Time		tr	VDD = 450 V, ID = 3.6 A,									-	25	-	ns
Turn-Off Delay Time		td(off)	Rg = 12 , RD = 120 , see fig. 10b									-	90	-
Fall Time		tf										-	30	-
Internal Drain Inductance		LD	Between lead,							D		-	4.5	-
			6 mm (0.25") from
			package and center of			G									nH
Internal Source Inductance		LS	die contact							S		-	7.5	-
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current		IS	MOSFET symbol								D	-	-	3.6
			showing the												A
Pulsed Diode Forward Currenta		ISM	integral reverse			G						-	-	14
			p - n junction diode								S
Body Diode Voltage		VSD	TJ = 25 °C, IS = 3.6 A, VGS = 0 Vb									-	-	1.8	V
Body Diode Reverse Recovery Time		trr	TJ = 25 °C, IF = 3.6 A, dI/dt = 100 A/μsb									-	430	650	ns
Body Diode Reverse Recovery Charge		Qrr										-	1.4	2.1	μC
Forward Turn-On Time		ton	Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes

a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b.Pulse width 300 μs; duty cycle 2 %.

www.vishay.com	Document Number: 91389
2	S11-1055-Rev. C, 30-May-11
	This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRFBF30S, SiHFBF30S

Vishay Siliconix

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Fig. 1 - Typical Output Characteristics, TC = 25 °C				Fig. 3 - Typical Transfer Characteristics

Fig. 2 -Typical Output Characteristics, TC = 150 °C

Fig. 4 - Normalized On-Resistance vs. Temperature

Document Number: 91389	www.vishay.com
S11-1055-Rev. C, 30-May-11	3

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000