Vishay IRFBC30S, SiHFBC30S, IRFBC30L, SiHFBC30L Data Sheet

IRFBC30S, SiHFBC30S, IRFBC30L, SiHFBC30L

Vishay Siliconix

Power MOSFET

PRODUCT SUMMARY

VDS (V)				600
RDS(on) ( )			VGS = 10 V	2.2
Qg (Max.) (nC)				31
Qgs (nC)				4.6
Qgd (nC)				17
Configuration				Single
				D
I2PAK (TO-262)		D2PAK (TO-263)
		G	G
	D S		D
G			S
				S
				N-Channel MOSFET

FEATURES

• Halogen-free According to IEC 61249-2-21 Definition

• Surface Mount (IRFBC30S, SiHFBC30S)

• Low-Profile Through-Hole (IRFBC30L, SiHFBC30L)

• Available in Tape and Reel (IRFBC30S, SiHFBC30S)

• Dynamic dV/dt Rating

•150 °C Operating Temperature

•Fast Switching

•Fully Avalanche Rated

•Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The D2PAK is a surface mount power package capable of the accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. The through-hole version (IRFBC30L, SiHFBC30L) is a available for low-profile applications.

ORDERING INFORMATION
Package	D2PAK (TO-263)				D2PAK (TO-263)			I2PAK (TO-262)
Lead (Pb)-free and Halogen-free	SiHFBC30S-GE3				SiHFBC30STRL-GE3a			SiHFBC30L-GE3
Lead (Pb)-free	IRFBC30SPbF				IRFBC30STRLPbFa			IRFBC30LPbF
	SiHFBC30S-E3				SiHFBC30STL-E3a			SiHFBC30L-E3
Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER						SYMBOL		LIMIT		UNIT
Drain-Source Voltage						VDS	600			V
Gate-Source Voltage						VGS	± 20
Continuous Drain Currente		VGS at 10 V		TC = 25 °C		ID	3.6
										A
				TC = 100 °C			2.3
Pulsed Drain Currenta, e						IDM	14
Linear Derating Factor							0.59			W/°C
Single Pulse Avalanche Energyb, e						EAS	290			mJ
Avalanche Currenta						IAR	3.6			A
Repetiitive Avalanche Energya						EAR	7.4			mJ
Maximum Power Dissipation			TA = 25 °C			PD	3.1			W
			TC = 25 °C				74
Peak Diode Recovery dV/dtc, e						dV/dt	3.0			V/ns
Operating Junction and Storage Temperature Range						TJ, Tstg	- 55 to + 150			°C
Soldering Recommendations (Peak Temperature)			for 10 s					300d

Notes

a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b.VDD = 50 V, starting TJ = 25 °C, L = 41 mH, Rg = 25 , IAS = 3.6 A (see fig. 12).

c.ISD 3.6 A, dI/dt 60 A/μs, VDD VDS, TJ 150 °C.

d.1.6 mm from case.

e.Uses IRFBC30, SiHFBC30 data and test conditions.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91111	www.vishay.com
S11-1053-Rev. C, 30-May-11	1

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRFBC30S, SiHFBC30S, IRFBC30L, SiHFBC30L

Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER	SYMBOL	TYP.	MAX.	UNIT
Maximum Junction-to-Ambient (PCB	RthJA	-	40
Mounted, steady-state)a				°C/W
Maximum Junction-to-Case (Drain)	RthJC	-	1.7

Note

a.When mounted on 1" square PCB (FR-4 or G-10 material).

For recommended footprint and soldering techniques refer to application note #AN-994.

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER		SYMBOL	TEST CONDITIONS								MIN.	TYP.	MAX.	UNIT
Static
Drain-Source Breakdown Voltage		VDS	VGS = 0, ID = 250 μA								600	-	-	V
VDS Temperature Coefficient		VDS/TJ	Reference to 25 °C, ID = 1 mAc								-	0.62	-	V/°C
Gate-Source Threshold Voltage		VGS(th)	VDS = VGS, ID = 250 μA								2.0	-	4.0	V
Gate-Source Leakage		IGSS		VGS = ± 20 V							-	-	± 100	nA
Zero Gate Voltage Drain Current		IDSS	VDS = 600 V, VGS = 0 V								-	-	100	μA
			VDS = 480 V, VGS = 0 V, TJ = 125 °C								-	-	500
Drain-Source On-State Resistance		RDS(on)	VGS = 10 V		ID = 2.2 Ab						-	-	2.2
Forward Transconductance		gfs	VDS = 50 V, ID = 2.2 Ac								2.5	-	-	S
Dynamic
Input Capacitance		Ciss			VGS = 0 V,						-	660	-
Output Capacitance		Coss			VDS = 25 V,						-	86	-	pF
			f = 1.0 MHz, see fig. 5c
Reverse Transfer Capacitance		Crss									-	19	-
Total Gate Charge		Qg			ID = 3.6 A, VDS = 360 V,						-	-	31
Gate-Source Charge		Qgs	VGS = 10 V								-	-	4.6	nC
					see fig. 6 and 13b, c
Gate-Drain Charge		Qgd									-	-	17
Turn-On Delay Time		td(on)									-	11	-
Rise Time		tr	VDD = 300 V, ID = 3.6 A,								-	13	-	ns
Turn-Off Delay Time		td(off)	Rg = 12 , RD = 82 , see fig. 10b, c								-	35	-
Fall Time		tf									-	14	-
Internal Source Inductance		LS	Between lead, and center of die contcat								-	7.5	-	nH
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current		IS	MOSFET symbol							D	-	-	3.6
			showing the											A
			integral reverse
					G
Pulsed Diode Forward Currenta		ISM	p - n junction diode							S	-	-	14
Body Diode Voltage		VSD	TJ = 25 °C, IS = 3.6 A, VGS = 0 Vb								-	-	1.6	V
Body Diode Reverse Recovery Time		trr	TJ = 25 °C, IF = 3.6 A, dI/dt = 100 A/μsb, c								-	370	810	ns
Body Diode Reverse Recovery Charge		Qrr									-	2.0	4.2	μC
Forward Turn-On Time		ton	Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes

a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b.Pulse width 300 μs; duty cycle 2 %.

c.Uses IRFBC30, SiHFBC30 data and test conditions.

www.vishay.com	Document Number: 91111
2	S11-1053-Rev. C, 30-May-11

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRFBC30S, SiHFBC30S, IRFBC30L, SiHFBC30L

Vishay Siliconix

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Fig. 1 - Typical Output Characteristics		Fig. 3 - Typical Transfer Characteristics

Fig. 2 - Typical Output Characteristics

Fig. 4 - Normalized On-Resistance vs. Temperature

Document Number: 91111	www.vishay.com
S11-1053-Rev. C, 30-May-11	3

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRFBC30S, SiHFBC30S, IRFBC30L, SiHFBC30L

Vishay Siliconix

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage		Fig. 7 - Typical Source-Drain Diode Forward Voltage

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

Fig. 8 - Maximum Safe Operating Area

www.vishay.com	Document Number: 91111
4	S11-1053-Rev. C, 30-May-11

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000