N-Channel MOSFET
G
D
S
TO-220AB
G
D
S
Power MOSFET
IRFBC30A, SiHFBC30A
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) 600
R
(Ω)V
DS(on)
Q
(Max.) (nC) 23
g
Q
(nC) 5.4
gs
Q
(nC) 11
gd
Configuration Single
= 10 V 2.2
GS
FEATURES
• Low Gate Charge Qg Results in Simple Drive
Requirement
• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
• Fully Characterized Capacitance and Avalanche Voltage
and Current
• Effective C
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptable Power Supply
• High Speed Power Switching
TYPICAL SMPS TOPOLOGY
• Single Transistor Flyback
ORDERING INFORMATION
Package TO-220AB
Lead (Pb)-free
SnPb
IRFBC30APbF
SiHFBC30A-E3
IRFBC30A
SiHFBC30A
Specified
oss
Available
RoHS*
COMPLIANT
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate-Source Voltage V
= 25 °C
T
Continuous Drain Current V
Pulsed Drain Current
a
at 10 V
GS
C
= 100 °C 2.3
C
DS
± 30
GS
I
D
IDM 14
Linear Derating Factor 0.69 W/°C
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation T
Peak Diode Recovery dV/dt
b
a
a
= 25 °C P
c
C
Operating Junction and Storage Temperature Range T
E
AS
I
AR
E
AR
D
dV/dt 7.0 V/ns
, T
J
stg
Soldering Recommendations (Peak Temperature) for 10 s 300
Mounting Torque 6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T
c. I
SD
= 25 °C, L = 41 mH, Rg = 25 Ω, IAS = 3.6 A (see fig. 12).
J
≤ 3.6 A, dI/dt ≤ 170 A/μs, VDD ≤ VDS, TJ ≤ 150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91108 www.vishay.com
S11-0515-Rev. B, 21-Mar-11 1
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
This datasheet is subject to change without notice.
600
3.6
290 mJ
3.6 A
7.4 mJ
74 W
- 55 to + 150
d
10 lbf · in
1.1 N · m
www.vishay.com/doc?91000
V
AT
°C
IRFBC30A, SiHFBC30A
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient R
Maximum Junction-to-Case (Drain) R
thJA
thCS
thJC
-62
0.50 -
-1.7
°C/WCase-to-Sink, Flat, Greased Surface R
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
V
Temperature Coefficient ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.67 - V/°C
DS
Gate-Source Threshold Voltage V
Gate-Source Leakage I
Zero Gate Voltage Drain Current I
Drain-Source On-State Resistance R
Forward Transconductance g
DS
GS(th)
V
GSS
DSS
VGS = 10 V ID = 2.2 A
DS(on)
fs
Dynamic
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Output Capacitance C
Effective Output Capacitance C
Total Gate Charge Q
Gate-Drain Charge Q
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
iss
-70-
oss
-3.5-
rss
oss
eff. V
oss
g
--5.4
gs
--11
gd
d(on)
r
-19-
d(off)
-12-
f
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
Pulsed Diode Forward Current
a
Body Diode Voltage V
Body Diode Reverse Recovery Time t
Body Diode Reverse Recovery Charge Q
Forward Turn-On Time t
S
I
SM
SD
rr
rr
on
MOSFET symbol
showing the
integral reverse
p - n junction diode
TJ = 25 °C, IF = 3.6 A, dI/dt = 100 A/μs
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %.
c. C
eff. is a fixed capacitance that gives the same charging time as C
oss
VGS = 0 V, ID = 250 μA 600 - - V
VDS = VGS, ID = 250 μA 2.0 - 4.5 V
= ± 30 V - - ± 100 nA
GS
VDS = 600 V, VGS = 0 V - - 25
V
= 480 V, VGS = 0 V, TJ = 125 °C - - 250
DS
VDS = 50 V, ID = 2.2 A
VGS = 0 V,
V
f = 1.0 MHz, see fig. 5
V
= 0 V
GS
b
b
= 25 V,
DS
V
= 1.0 V, f = 1.0 MHz - 730 -
DS
= 480 V, f = 1.0 MHz - 19 -
V
DS
= 0 V to 480 V
DS
c
--2.2Ω
2.1 - - S
- 510 -
-31-
--23
= 3.6 A, VDS = 480 V
I
V
GS
= 10 V
D
see fig. 6 and 13
b
-9.8-
V
= 300 V, ID = 3.6 A,
DD
R
= 12 Ω, RD = 82 Ω, see fig. 10
g
G
TJ = 25 °C, IS = 3.6 A, VGS = 0 V
b
D
S
b
-13-
--3.6
--14
--1.6V
- 400 600 ns
b
-1.11.7μC
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
while VDS is rising from 0 % to 80 % VDS.
oss
μA
pF
nC Gate-Source Charge Q
ns
A
www.vishay.com Document Number: 91108
2 S11-0515-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
0.01
0.1
1
10
100
0.1 1 10 100
20μs PULSE WIDTH
T = 25 C
J
°
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
4.5V
IRFBC30A, SiHFBC30A
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Fig. 1 - Typical Output Characteristics
Vishay Siliconix
100
10
°
T = 150 C
J
1
°
T = 25 C
0.1
D
I , Drain-to-Source Current (A)
0.01
4.0 5.0 6.0 7.0 8.0 9.0
Fig. 3 - Typical Transfer Characteristics
J
V = 50V
DS
20μs PULSE WIDTH
V , Gate-to-Source Voltage (V)
GS
10
1
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
4.5V
D
I , Drain-to-Source Current (A)
20µs PULSE WIDTH
0.1
0.1 1 10 100
V , Drain-to-Source Voltage (V)
DS
T = 150 C
°
J
Fig. 2 - Typical Output Characteristics
3.0
2.5
2.0
1.5
(Normalized)
1.0
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
3.6A
I =
D
V =
GS
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperatur e ( C)
J
°
Fig. 4 - Normalized On-Resistance vs. Temperature
10V
Document Number: 91108 www.vishay.com
S11-0515-Rev. B, 21-Mar-11 3
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
This datasheet is subject to change without notice.
www.vishay.com/doc?91000
IRFBC30A, SiHFBC30A
1 10 100 1000
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
10000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
Coss
Crss
Ciss
V
GS
= 0V, f = 1 MHZ
C
iss
= C
gs
+ Cgd, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
0 4 8 12 16 20 24
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
3.6A
V = 120V
DS
V = 300V
DS
V = 480V
DS
0.1
1
10
100
0.4 0.6 0.8 1.0 1.2
V ,Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J
°
T = 150 C
J
°
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
www.vishay.com Document Number: 91108
4 S11-0515-Rev. B, 21-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
100
10
1
D
I , Drain Current (A)I , Drain Current (A)
= 25 C
C
T T= 150 C
J
Single Pulse
0.1
10 100 1000 10000
Fig. 8 - Maximum Safe Operating Area
This datasheet is subject to change without notice.
OPERATION IN THIS AREA LIMITED
°
BY R
DS(on)
10us
100us
1ms
10ms
°
V , Drain-to-Source Voltage (V)
DS
www.vishay.com/doc?91000
25 50 75 100 125 150
0.0
1.0
2.0
3.0
4.0
T , Case Temperature ( C)
I , Drain Current (A)
°
C
D
V
DS
90 %
10 %
V
GS
t
d(on)
t
r
t
d(off)
t
f
0.01
0.1
1
10
0.00001 0. 0001 0.001 0.01 0.1 1
Notes:
1. Duty factor D = t / t
2. Peak T =P x Z + T
1 2
J DM thJC C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
A
R
G
I
AS
0.01 Ω
t
p
D.U.T
L
V
DS
+
-
V
DD
Driver
15 V
20 V
I
AS
V
DS
t
p
IRFBC30A, SiHFBC30A
Fig. 9 - Maximum Drain Current vs. Case Temperature
V
DS
V
GS
R
G
Vishay Siliconix
R
D
D.U.T.
+
V
-
DD
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Document Number: 91108 www.vishay.com
S11-0515-Rev. B, 21-Mar-11 5
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms
This datasheet is subject to change without notice.
www.vishay.com/doc?91000
IRFBC30A, SiHFBC30A
D.U.T.
3 mA
V
GS
V
DS
I
G
I
D
0.3 µF
0.2 µF
50 kΩ
12 V
Current regulator
Current sampling resistors
Same type as D.U.T.
+
-
Vishay Siliconix
700
600
TOP
BOTTOM
500
400
300
200
100
AS
E , Single Pulse Avalanche Energy (mJ)
0
25 50 75 100 125 150
Starting T , Junction Temperature( C)
J
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
I
D
1.6A
2.3A
3.6A
°
)
V
(
e
g
a
t
l
o
V
e
h
c
n
a
l
a
v
A
,
v
a
S
D
V
740
720
700
680
660
640
0.0 1.0 2.0 3.0 4.0
IAV, Avalanche Current ( A)
Fig. 12d - Typical Drain-to-Source Voltage vs.
Avalanche Current
Q
10 V
V
Q
GS
G
G
Q
GD
Charge
Fig. 13a - Basic Gate Charge Waveform
Fig. 13b - Gate Charge Test Circuit
www.vishay.com Document Number: 91108
6 S11-0515-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFBC30A, SiHFBC30A
+
-
R
g
D.U.T.
Peak Diode Recovery dV/dt Test Circuit
+
-
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
-
• dV/dt controlled by R
• Driver same type as D.U.T.
I
controlled by duty factor “D”
•
SD
• D.U.T. - device under test
g
+
Vishay Siliconix
+
V
DD
-
Reverse
recovery
current
Re-applied
voltage
Driver gate drive
P.W.
D.U.T. l
D.U.T. V
Inductor current
Note
a. V
waveform
SD
waveform
DS
Body diode forward drop
Ripple ≤ 5 %
= 5 V for logic level devices
GS
Period
Body diode forward
current
dI/dt
Diode recovery
dV/dt
Fig. 14 - For N-Channel
D =
P.W.
Period
V
GS
V
DD
I
SD
= 10 Va
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91108
.
Document Number: 91108 www.vishay.com
S11-0515-Rev. B, 21-Mar-11 7
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
www.vishay.com
M
*
3
2
1
L
L(1)
D
H(1)
Q
Ø P
A
F
J(1)
b(1)
e(1)
e
E
b
C
Package Information
Vishay Siliconix
TO-220-1
DIM.
A 4.24 4.65 0.167 0.183
b 0.69 1.02 0.027 0.040
b(1) 1.14 1.78 0.045 0.070
c 0.36 0.61 0.014 0.024
D 14.33 15.85 0.564 0.624
E 9.96 10.52 0.392 0.414
e 2.41 2.67 0.095 0.105
e(1) 4.88 5.28 0.192 0.208
F 1.14 1.40 0.045 0.055
H(1) 6.10 6.71 0.240 0.264
J(1) 2.41 2.92 0.095 0.115
L 13.36 14.40 0.526 0.567
L(1) 3.33 4.04 0.131 0.159
Ø P 3.53 3.94 0.139 0.155
Q 2.54 3.00 0.100 0.118
ECN: X15-0364-Rev. C, 14-Dec-15
DWG: 6031
Note
• M* = 0.052 inches to 0.064 inches (dimension including
protrusion), heatsink hole for HVM
MILLIMETERS INCHES
MIN. MAX. MIN. MAX.
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Revison: 14-Dec-15
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ASE Xi’an
For technical questions, contact: hvm@vishay.com
Package Picture
1
Document Number: 66542
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Disclaimer
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Revision: 13-Jun-16
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Document Number: 91000
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