Vishay IRFBC30A, SiHFBC30A Data Sheet

IRFBC30A, SiHFBC30A

Vishay Siliconix

Power MOSFET

PRODUCT SUMMARY

VDS (V)		600
RDS(on) (Ω)	VGS = 10 V		2.2
Qg (Max.) (nC)		23
Qgs (nC)		5.4
Qgd (nC)		11
Configuration		Single

FEATURES

• Low Gate Charge Qg Results in Simple Drive
Requirement	Available
• Improved Gate, Avalanche and Dynamic dV/dt	RoHS*
Ruggedness	COMPLIANT

•Fully Characterized Capacitance and Avalanche Voltage and Current

•Effective Coss Specified

D

• Compliant to RoHS Directive 2002/95/EC

TO-220AB

APPLICATIONS

• Switch Mode Power Supply (SMPS)

G

• Uninterruptable Power Supply

• High Speed Power Switching

S

D

TYPICAL SMPS TOPOLOGY

G

S

• Single Transistor Flyback

N-Channel MOSFET

ORDERING INFORMATION

Package

TO-220AB

Lead (Pb)-free

IRFBC30APbF

SiHFBC30A-E3

SnPb

IRFBC30A

SiHFBC30A

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

VDS

600

V

Gate-Source Voltage

VGS

± 30

Continuous Drain Current

VGS at 10 V

TC = 25 °C

ID

3.6

TC = 100 °C

2.3

A

Pulsed Drain Currenta

IDM

14

Linear Derating Factor

0.69

W/°C

Single Pulse Avalanche Energyb

EAS

290

mJ

Repetitive Avalanche Currenta

IAR

3.6

A

Repetitive Avalanche Energya

EAR

7.4

mJ

Maximum Power Dissipation

TC = 25 °C

PD

74

W

Peak Diode Recovery dV/dtc

dV/dt

7.0

V/ns

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to + 150

°C

Soldering Recommendations (Peak Temperature)

for 10 s

300d

Mounting Torque

6-32 or M3 screw

10

lbf · in

1.1

N · m

Notes

a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b.Starting TJ = 25 °C, L = 41 mH, Rg = 25 Ω, IAS = 3.6 A (see fig. 12).

c.ISD ≤ 3.6 A, dI/dt ≤ 170 A/μs, VDD ≤ VDS, TJ ≤ 150 °C.

d.1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91108	www.vishay.com
S11-0515-Rev. B, 21-Mar-11	1

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRFBC30A, SiHFBC30A

Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER	SYMBOL	TYP.	MAX.	UNIT
Maximum Junction-to-Ambient	RthJA	-	62
Case-to-Sink, Flat, Greased Surface	RthCS	0.50	-	°C/W
Maximum Junction-to-Case (Drain)	RthJC	-	1.7

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER		SYMBOL	TEST CONDITIONS										MIN.	TYP.	MAX.	UNIT
Static
Drain-Source Breakdown Voltage		VDS	VGS = 0 V, ID = 250 μA										600	-	-	V
VDS Temperature Coefficient		VDS/TJ	Reference to 25 °C, ID = 1 mA										-	0.67	-	V/°C
Gate-Source Threshold Voltage		VGS(th)	VDS = VGS, ID = 250 μA										2.0	-	4.5	V
Gate-Source Leakage		IGSS		VGS = ± 30 V									-	-	± 100	nA
Zero Gate Voltage Drain Current		IDSS	VDS = 600 V, VGS = 0 V										-	-	25	μA
			VDS = 480 V, VGS = 0 V, TJ = 125 °C										-	-	250
Drain-Source On-State Resistance		RDS(on)	VGS = 10 V			ID = 2.2 Ab							-	-	2.2	Ω
Forward Transconductance		gfs	VDS = 50 V, ID = 2.2 Ab										2.1	-	-	S
Dynamic
Input Capacitance		Ciss		VGS = 0 V,									-	510	-
Output Capacitance		Coss
				VDS = 25 V,									-	70	-
			f = 1.0 MHz, see fig. 5
Reverse Transfer Capacitance		Crss											-	3.5	-	pF
Output Capacitance		Coss			VDS = 1.0 V, f = 1.0 MHz								-	730	-
			VGS = 0 V		VDS = 480 V, f = 1.0 MHz								-	19	-
Effective Output Capacitance		Coss eff.			VDS = 0 V to 480 Vc								-	31	-
Total Gate Charge		Qg											-	-	23
					ID = 3.6 A, VDS = 480 V
Gate-Source Charge		Qgs	VGS = 10 V										-	-	5.4	nC
					see fig. 6 and 13b
Gate-Drain Charge		Qgd											-	-	11
Turn-On Delay Time		td(on)											-	9.8	-
Rise Time		tr	VDD	= 300 V, ID = 3.6 A,									-	13	-	ns
Turn-Off Delay Time		td(off)	Rg = 12 Ω, RD = 82			Ω, see fig. 10b							-	19	-
Fall Time		tf											-	12	-
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current		IS	MOSFET symbol									D	-	-	3.6
			showing the													A
			integral reverse			G
Pulsed Diode Forward Currenta		ISM											-	-	14
			p - n junction diode									S
Body Diode Voltage		VSD	TJ = 25 °C, IS = 3.6 A, VGS = 0 Vb										-	-	1.6	V
Body Diode Reverse Recovery Time		trr	TJ = 25 °C, IF = 3.6 A, dI/dt = 100 A/μsb										-	400	600	ns
Body Diode Reverse Recovery Charge		Qrr											-	1.1	1.7	μC
Forward Turn-On Time		ton	Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes

a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b.Pulse width ≤ 300 μs; duty cycle ≤ 2 %.

c.Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDS.

www.vishay.com	Document Number: 91108
2	S11-0515-Rev. B, 21-Mar-11

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRFBC30A, SiHFBC30A

Vishay Siliconix

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

	100	VGS
	TOP	15V
<![if ! IE]> <![endif]>(A)		10V
		8.0V
		7.0V
<![if ! IE]> <![endif]>Current		6.0V
	10	5.5V
		5.0V
	BOTTOM 4.5V
<![if ! IE]> <![endif]>Drain-to-Source	1
	0.1
<![if ! IE]> <![endif]>,
<![if ! IE]> <![endif]>D
<![if ! IE]> <![endif]>I			4.5V
			20μs PULSE WIDTH
	0.01		TJ= 25 °C
		1	10	100
	0.1

VDS , Drain-to-Source Voltage (V)

Fig. 1 - Typical Output Characteristics

	10	VGS
	TOP	15V
<![if ! IE]> <![endif]>(A)		10V
		8.0V
		7.0V
<![if ! IE]> <![endif]>Current		6.0V
		5.5V
		5.0V
	BOTTOM 4.5V
<![if ! IE]> <![endif]>Drain-to-Source	1
			4.5V
<![if ! IE]> <![endif]>,
<![if ! IE]> <![endif]>D
<![if ! IE]> <![endif]>I
			20µs PULSE WIDTH
	0.1		TJ= 150 °C
	0.1	1	10	100

VDS , Drain-to-Source Voltage (V)

Fig. 2 - Typical Output Characteristics

		100
	<![if ! IE]> <![endif]>(A)
	<![if ! IE]> <![endif]>Current	10
		T = 150°C
	<![if ! IE]> <![endif]>Drain-to-Source	J
		1
		T = 25°C
		J
		0.1
	<![if ! IE]> <![endif]>,
	<![if ! IE]> <![endif]>D
	<![if ! IE]> <![endif]>I
		VDS= 50V

20μs PULSE WIDTH 0.01

4.0 5.0 6.0 7.0 8.0 9.0

VGS, Gate-to-Source Voltage (V)

Fig. 3 - Typical Transfer Characteristics

<![if ! IE]> <![endif]>Resistance		3.0	I	D	= 3.6A
		2.5
<![if ! IE]> <![endif]>Drain-to-Source On	<![if ! IE]> <![endif]>(Normalized)	2.0
		1.5
		1.0
<![if ! IE]> <![endif]>,
<![if ! IE]> <![endif]>DS(on)		0.5
											VGS=10V
<![if ! IE]> <![endif]>R		0.0
					-40 -20	0	20	40	60	80	100 120 140 160
		-60
					T	, Junction Temperature ( °C)
					J

Fig. 4 - Normalized On-Resistance vs. Temperature

Document Number: 91108	www.vishay.com
S11-0515-Rev. B, 21-Mar-11	3

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000