IRFBC30A, SiHFBC30A
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) |
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600 |
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RDS(on) (Ω) |
VGS = 10 V |
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2.2 |
Qg (Max.) (nC) |
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23 |
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Qgs (nC) |
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5.4 |
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Qgd (nC) |
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11 |
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Configuration |
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Single |
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FEATURES
• Low Gate Charge Qg Results in Simple Drive |
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Requirement |
Available |
• Improved Gate, Avalanche and Dynamic dV/dt |
RoHS* |
Ruggedness |
COMPLIANT |
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•Fully Characterized Capacitance and Avalanche Voltage and Current
•Effective Coss Specified
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• Compliant to RoHS Directive 2002/95/EC |
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TO-220AB |
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APPLICATIONS |
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• Switch Mode Power Supply (SMPS) |
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• Uninterruptable Power Supply |
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• High Speed Power Switching |
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TYPICAL SMPS TOPOLOGY |
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• Single Transistor Flyback |
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N-Channel MOSFET |
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ORDERING INFORMATION |
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Package |
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TO-220AB |
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Lead (Pb)-free |
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IRFBC30APbF |
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SiHFBC30A-E3 |
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SnPb |
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IRFBC30A |
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SiHFBC30A |
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ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) |
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PARAMETER |
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SYMBOL |
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LIMIT |
UNIT |
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Drain-Source Voltage |
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VDS |
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600 |
V |
Gate-Source Voltage |
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VGS |
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± 30 |
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Continuous Drain Current |
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VGS at 10 V |
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TC = 25 °C |
ID |
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3.6 |
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TC = 100 °C |
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2.3 |
A |
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Pulsed Drain Currenta |
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IDM |
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14 |
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Linear Derating Factor |
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0.69 |
W/°C |
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Single Pulse Avalanche Energyb |
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EAS |
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290 |
mJ |
Repetitive Avalanche Currenta |
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IAR |
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3.6 |
A |
Repetitive Avalanche Energya |
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EAR |
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7.4 |
mJ |
Maximum Power Dissipation |
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TC = 25 °C |
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PD |
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74 |
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Peak Diode Recovery dV/dtc |
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dV/dt |
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7.0 |
V/ns |
Operating Junction and Storage Temperature Range |
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TJ, Tstg |
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- 55 to + 150 |
°C |
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Soldering Recommendations (Peak Temperature) |
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for 10 s |
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300d |
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Mounting Torque |
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6-32 or M3 screw |
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10 |
lbf · in |
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1.1 |
N · m |
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Notes
a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b.Starting TJ = 25 °C, L = 41 mH, Rg = 25 Ω, IAS = 3.6 A (see fig. 12).
c.ISD ≤ 3.6 A, dI/dt ≤ 170 A/μs, VDD ≤ VDS, TJ ≤ 150 °C.
d.1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91108 |
www.vishay.com |
S11-0515-Rev. B, 21-Mar-11 |
1 |
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFBC30A, SiHFBC30A
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER |
SYMBOL |
TYP. |
MAX. |
UNIT |
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Maximum Junction-to-Ambient |
RthJA |
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62 |
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Case-to-Sink, Flat, Greased Surface |
RthCS |
0.50 |
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°C/W |
Maximum Junction-to-Case (Drain) |
RthJC |
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1.7 |
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SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER |
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SYMBOL |
TEST CONDITIONS |
MIN. |
TYP. |
MAX. |
UNIT |
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Static |
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Drain-Source Breakdown Voltage |
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VDS |
VGS = 0 V, ID = 250 μA |
600 |
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V |
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VDS Temperature Coefficient |
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VDS/TJ |
Reference to 25 °C, ID = 1 mA |
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0.67 |
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V/°C |
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Gate-Source Threshold Voltage |
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VGS(th) |
VDS = VGS, ID = 250 μA |
2.0 |
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4.5 |
V |
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Gate-Source Leakage |
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IGSS |
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VGS = ± 30 V |
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± 100 |
nA |
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Zero Gate Voltage Drain Current |
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IDSS |
VDS = 600 V, VGS = 0 V |
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25 |
μA |
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VDS = 480 V, VGS = 0 V, TJ = 125 °C |
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250 |
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Drain-Source On-State Resistance |
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RDS(on) |
VGS = 10 V |
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ID = 2.2 Ab |
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2.2 |
Ω |
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Forward Transconductance |
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gfs |
VDS = 50 V, ID = 2.2 Ab |
2.1 |
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Dynamic |
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Input Capacitance |
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Ciss |
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VGS = 0 V, |
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510 |
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Output Capacitance |
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Coss |
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VDS = 25 V, |
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70 |
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f = 1.0 MHz, see fig. 5 |
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Reverse Transfer Capacitance |
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Crss |
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3.5 |
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pF |
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Output Capacitance |
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Coss |
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VDS = 1.0 V, f = 1.0 MHz |
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VGS = 0 V |
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VDS = 480 V, f = 1.0 MHz |
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Effective Output Capacitance |
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Coss eff. |
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VDS = 0 V to 480 Vc |
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Total Gate Charge |
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Qg |
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23 |
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ID = 3.6 A, VDS = 480 V |
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Gate-Source Charge |
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Qgs |
VGS = 10 V |
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5.4 |
nC |
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Gate-Drain Charge |
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Qgd |
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Turn-On Delay Time |
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td(on) |
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9.8 |
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Rise Time |
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tr |
VDD |
= 300 V, ID = 3.6 A, |
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Turn-Off Delay Time |
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td(off) |
Rg = 12 Ω, RD = 82 |
Ω, see fig. 10b |
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Fall Time |
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tf |
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12 |
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Drain-Source Body Diode Characteristics |
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Continuous Source-Drain Diode Current |
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IS |
MOSFET symbol |
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3.6 |
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showing the |
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integral reverse |
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Pulsed Diode Forward Currenta |
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ISM |
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p - n junction diode |
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Body Diode Voltage |
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VSD |
TJ = 25 °C, IS = 3.6 A, VGS = 0 Vb |
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1.6 |
V |
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Body Diode Reverse Recovery Time |
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trr |
TJ = 25 °C, IF = 3.6 A, dI/dt = 100 A/μsb |
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400 |
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Body Diode Reverse Recovery Charge |
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Qrr |
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1.1 |
1.7 |
μC |
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Forward Turn-On Time |
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Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) |
Notes
a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b.Pulse width ≤ 300 μs; duty cycle ≤ 2 %.
c.Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDS.
www.vishay.com |
Document Number: 91108 |
2 |
S11-0515-Rev. B, 21-Mar-11 |
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFBC30A, SiHFBC30A
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
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100 |
VGS |
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TOP |
15V |
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<![if ! IE]> <![endif]>(A) |
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10V |
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8.0V |
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7.0V |
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<![if ! IE]> <![endif]>Current |
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6.0V |
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10 |
5.5V |
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5.0V |
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BOTTOM 4.5V |
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<![if ! IE]> <![endif]>Drain-to-Source |
1 |
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0.1 |
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<![if ! IE]> <![endif]>, |
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<![if ! IE]> <![endif]>D |
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<![if ! IE]> <![endif]>I |
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4.5V |
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20μs PULSE WIDTH |
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0.01 |
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TJ= 25 °C |
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10 |
100 |
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0.1 |
VDS , Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
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10 |
VGS |
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15V |
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<![if ! IE]> <![endif]>(A) |
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10V |
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8.0V |
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7.0V |
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<![if ! IE]> <![endif]>Current |
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6.0V |
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5.5V |
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5.0V |
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BOTTOM 4.5V |
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<![if ! IE]> <![endif]>Drain-to-Source |
1 |
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4.5V |
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20µs PULSE WIDTH |
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TJ= 150 °C |
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0.1 |
1 |
10 |
100 |
VDS , Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics
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<![if ! IE]> <![endif]>(A) |
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<![if ! IE]> <![endif]>Current |
10 |
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T = 150°C |
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<![if ! IE]> <![endif]>Drain-to-Source |
J |
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J |
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0.1 |
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<![if ! IE]> <![endif]>D |
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VDS= 50V |
20μs PULSE WIDTH 0.01
4.0 5.0 6.0 7.0 8.0 9.0
VGS, Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
<![if ! IE]> <![endif]>Resistance |
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3.0 |
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= 3.6A |
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2.5 |
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<![if ! IE]> <![endif]>Drain-to-Source On |
<![if ! IE]> <![endif]>(Normalized) |
2.0 |
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1.0 |
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<![if ! IE]> <![endif]>, |
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<![if ! IE]> <![endif]>DS(on) |
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0.5 |
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VGS=10V |
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<![if ! IE]> <![endif]>R |
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0.0 |
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-40 -20 |
0 |
20 |
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60 |
80 |
100 120 140 160 |
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-60 |
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T |
, Junction Temperature ( °C) |
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J |
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Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91108 |
www.vishay.com |
S11-0515-Rev. B, 21-Mar-11 |
3 |
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000