Vishay IRFBC20, SiHFBC20 Data Sheet
N-Channel MOSFET
G
D
S
TO-220AB
G
D
S
Power MOSFET
IRFBC20, SiHFBC20
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) 600
R
(Ω)V
DS(on)
Q
(Max.) (nC) 18
g
Q
(nC) 3.0
gs
Q
(nC) 8.9
gd
Configuration Single
= 10 V 4.4
GS
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
•Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.
ORDERING INFORMATION
Package TO-220AB
Lead (Pb)-free
SnPb
IRFBC20PbF
SiHFBC20-E3
IRFBC20
SiHFBC20
Available
RoHS*
COMPLIANT
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate-Source Voltage V
= 25 °C
T
Continuous Drain Current V
Pulsed Drain Current
a
at 10 V
GS
C
= 100 °C 1.4
C
DS
± 20
GS
I
D
IDM 8.0
Linear Derating Factor 0.40 W/°C
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation T
Peak Diode Recovery dV/dt
b
a
a
= 25 °C P
C
c
Operating Junction and Storage Temperature Range T
E
AS
I
AR
E
AR
D
dV/dt 3.0 V/ns
, T
J
stg
Soldering Recommendations (Peak Temperature) for 10 s 300
Mounting Torque 6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
= 50 V, starting TJ = 25 °C, L = 31 mH, Rg = 25 Ω, IAS = 2.2 A (see fig. 12).
DD
c. I
≤ 2.2 A, dI/dt ≤ 40 A/μs, VDD ≤ VDS, TJ ≤ 150 °C.
SD
d. 1.6 mm from case.
600
2.2
84 mJ
2.2 A
5.0 mJ
50 W
- 55 to + 150
d
10 lbf · in
1.1 N · m
V
AT
°C
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91106 www.vishay.com
S11-0514-Rev. B, 21-Mar-11 1
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
This datasheet is subject to change without notice.
www.vishay.com/doc?91000
IRFBC20, SiHFBC20
Vishay Siliconix
THERMAL RESISTANCE
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient R
Maximum Junction-to-Case (Drain) R
thJA
thCS
thJC
-62
0.50 -
-2.5
°C/WCase-to-Sink, Flat, Greased Surface R
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
Temperature Coefficient
V
DS
Gate-Source Threshold Voltage V
Gate-Source Leakage I
Zero Gate Voltage Drain Current I
Drain-Source On-State Resistance R
Forward Transconductance g
DS
ΔV
DS/TJ
GS(th)
V
GSS
DSS
VGS = 10 V ID = 1.3 A
DS(on)
fs
Dynamic
Input Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Q
Gate-Drain Charge Q
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Internal Drain Inductance L
iss
-48-
oss
-8.6-
rss
g
--3.0
gs
--8.9
gd
d(on)
r
-30-
d(off)
-25-
f
D
Between lead,
6 mm (0.25") from
package and center of
Internal Source Inductance L
S
die contact
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
Pulsed Diode Forward Current
a
Body Diode Voltage V
Body Diode Reverse Recovery Time t
Body Diode Reverse Recovery Charge Q
Forward Turn-On Time t
S
I
SM
SD
rr
rr
on
MOSFET symbol
showing the
integral reverse
p - n junction diode
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %.
VGS = 0 V, ID = 250 μA 600 - - V
Reference to 25 °C, I
= 1 mA
D
-0.88-
VDS = VGS, ID = 250 μA 2.0 - 4.0 V
= ± 20 V - - ± 100 nA
GS
VDS = 600 V, VGS = 0 V - - 100
V
= 480V, VGS = 0 V, TJ = 125 °C - - 500
DS
VDS = 50 V, ID = 1.3 A
VGS = 0 V,
V
= 25 V,
DS
f = 1.0 MHz, see fig. 5
b
b
--4.4Ω
1.4 - - S
-350-
--18
= 2.0 A, VDS = 360 V
I
V
GS
= 10 V
D
see fig. 6 and 13
b
-10-
= 300 V, ID = 2.0 A
V
DD
R
= 18 Ω, RD= 150 Ω
g
see fig. 10
b
G
G
TJ = 25 °C, IS = 2.2 A, VGS = 0 V
TJ = 25 °C, IF = 2.0 A,
dI/dt = 100 A/μs
b
D
S
D
S
b
-23-
-4.5-
-7.5-
--2.2
--8.0
--2.0V
- 290 580 ns
- 0.67 1.3 μC
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
V/°C
μA
pFOutput Capacitance C
nC Gate-Source Charge Q
ns
nH
A
www.vishay.com Document Number: 91106
2 S11-0514-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFBC20, SiHFBC20
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Fig. 1 - Typical Output Characteristics, TC = 25 °C
Vishay Siliconix
Fig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Output Characteristics, T
Document Number: 91106 www.vishay.com
S11-0514-Rev. B, 21-Mar-11 3
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
= 150 °C
C
This datasheet is subject to change without notice.
Fig. 4 - Normalized On-Resistance vs. Temperature
www.vishay.com/doc?91000
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