Vishay IRFB16N60L Data Sheet
SMPS MOSFET
S
D
G
Trr
Absolute Ma ximu m R atings
Continuous Drain Current, V
@ 10V
= 100°C
Continuous Drain Current, V
@ 10V
Pulsed Drain Current
c
Peak Diode Recovery dv/dt
e
11
V/ns
Diode Characteristics
Units
c
f
TJ = 125°C, di/dt = 100A/µs
f
f
TJ = 125°C, di/dt = 100A/µs
f
I
)
PD - 94631A
IRFB16N60L
Applications
HEXFET® Power MOSFET
• Zero Voltage Switching SMPS
V
• Telecom and Server Power Supplies
• Uninterruptible Power Supplies
DSSRDS(on)
600V
385m
• Motor Control applications
Features and Benefits
• SuperFast body diode eliminates the need for external
diodes in ZVS applications.
• Lower Gate charge results in simpler drive requirements.
• Enhanced dv/dt capabilities offer improved ruggedness.
• Higher Gate voltage threshold offers improved noise immunity
Parameter Max. Units
ID @ TC = 25°C
I
@ T
D
C
I
DM
P
@TC = 25°C
D
V
GS
dv/dt
T
J
T
STG
GS
GS
Power Dissipation 310 W
Linear Derating Factor 2.5 W/°C
Gat e-to-So urc e Voltage ±30 V
Operating Junction and -55 to + 150
Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 screw 1.1(10) N•m (lbf•in)
16
10 A
60
typ.
typ.
Ω 130ns 16A
.
TO-220AB
I
D
Symbol Parameter M in. Typ. Max.
I
S
I
SM
V
SD
t
rr
Q
rr
RRM
t
on
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Co nd itio ns
Continuous Source Current ––– ––– 16 MOSFET symbol
(Body Diode) A showing the
Pu lsed Sourc e C urrent ––– ––– 60 in te g ra l re v e rs e
(Body Diode)
Diode Forward Voltage ––– ––– 1.5 V
Reverse Recovery Time ––– 130 200 ns
Reverse Recovery Charge ––– 450 670 nC
Reverse Recovery Current ––– 5.8 8.7 A
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD
––– 240 360
––– 1080 1620
p-n junction diode.
= 25°C, IS = 16A, VGS = 0V
T
J
= 25°C, IF = 16A
T
J
= 25°C, IS = 16A, VGS = 0V
T
J
= 25°C
T
J
10/19/04
IRFB16N60L
V
V
/∆T
R
V
I
I
R
Q
Q
Q
t
t
t
t
C
C
C
C
eff.
C
eff. (ER)
EASSingl e Puls e Avalanche En ergy.
d
IARAvalanche Current
c
EARRepe titive Ava lanche Energy
c
R
Junction-to-Case
h
R
Junction-to-Ambient
h
Static @ TJ = 25°C (unless otherw ise specified)
Symbol Parameter Min. Typ. Max. Units
(BR)DSS
∆
DS(on)
GS(th)
DSS
GSS
G
(BR)DSS
Drain-to-Source Breakdown V oltage 600 ––– ––– V
Breakdo w n Voltage Temp. Coef ficient ––– 0.3 9 ––– V/°C
J
Static Dr ain-to-Source On-Resi stance ––– 3 85 460
Gate Threshold Voltage 3.0 ––– 5.0 V
Drain-to- Source Leakage Current ––– ––– 50 µA
––– ––– 2.0 mA
Gate-to-Sourc e Forward Leakage ––– ––– 100 nA
Gate-to-Source Reverse Leakage ––– – –– -100
Internal Gate Resistance ––– 0.79 –––
VGS = 0V, ID = 250µA
Re ferenc e to 25°C , I
V
Ω
m
GS
V
DS
V
DS
V
DS
V
GS
V
GS
Ω
f = 1MHz, open drain
Dynamic @ TJ = 25°C (unless otherw ise specified)
Symbol Parameter Min. Typ. Max. Units
gfs Forwa rd Tr a nsconductance 8.3 ––– ––– S
g
gs
gd
d(on)
r
d(off)
f
iss
oss
rss
oss
oss
Total Gate Charge ––– ––– 100
Gate-to-Source Charge ––– ––– 30 nC
Gate-to-Drain ("Miller") Charge ––– ––– 46
Turn-On Delay Time ––– 20 –––
Rise Time ––– 44 ––– ns
Turn-Off Delay Time ––– 28 –––
Fall Time ––– 5.5 –––
Input Capacitance ––– 2720 –––
Output Capacitance ––– 260 –––
Rever se Transfer C apacitanc e ––– 20 ––– pF
Effective Output Capaci t ance ––– 120 –––
Effective Output Capacitance ––– 100 –––
(Energy Related)
VDS = 50V, ID = 9.0A
= 16A
I
D
V
DS
V
GS
VDD = 300V
ID = 16A
R
G
V
GS
VGS = 0V
V
DS
ƒ = 1.0MHz, See F i g. 5
V
GS
Avalanche Characteristics
Symbol Parameter Typ. Units
––– mJ
––– A
––– mJ
Thermal Resistan ce
Symbol Parameter Typ. Units
JC
θ
JA
θ
––– °C/W
––– 62
Conditions
= 1mA
D
= 10V, ID = 9.0A
f
= VGS, ID = 250µA
= 600V, VGS = 0V
= 480V, VGS = 0V, TJ = 125°C
= 30V
= -30V
Conditions
= 480V
= 10V, See Fig . 7 & 15
Ω
= 1.8
= 10V, See Fig . 11a & 11b
= 25V
= 0V,VDS = 0V to 480V
Max.
310
16
31
Max.
0.4
f
f
g
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See Fig. 12)
Starting T
I
AS
I
SD
TJ ≤ 150°C.
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= 25°C, L = 2.5mH, RG = 25Ω,
J
= 16A.(See Figure 14a)
≤ 16A, di/dt ≤ 650A/µs, V
DD
≤ V
(BR)DSS
Pulse width ≤ 300µs; duty cycle ≤ 2%.
C
eff. is a fixed capacitance that gives the same charging time
oss
as C
while VDS is rising from 0 to 80% V
oss
C
eff.(ER) is a fixed capacitance that stores the same energy
oss
as C
while VDS is rising from 0 to 80% V
,
oss
R
is measured at TJ approximately 90°C
θ
DSS
DSS
.
.
IRFB16N60L
1000
TOP 15V
100
)
A
(
t
n
e
r
10
r
u
C
e
c
r
u
o
S
-
o
t
-
n
i
a
r
D
,
D
I
BOTTOM 5.0V
1
0.1
0.01
VGS
12V
10V
9.0V
8.0V
7.0V
6.0V
5.0V
20µs PULSE WIDTH
Tj = 25°C
0.001
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
1000
)
Α
100
(
t
n
e
r
r
u
C
10
e
c
r
u
o
S
-
1
o
t
-
n
i
a
r
D
,
0.1
D
I
TJ = 25°C
TJ = 150°C
V
= 50V
DS
20µs PULSE WIDTH
0.01
4 6 8 10 12 14 16
VGS, Gate-to-Source Voltage ( V)
100
TOP 15V
)
A
(
t
10
n
e
r
r
u
C
e
c
r
u
o
S
-
o
t
-
n
i
a
r
D
,
D
I
BOTTOM 5.0V
1
0.1
VGS
12V
10V
9.0V
8.0V
7.0V
6.0V
5.0V
20µs PULSE WIDTH
Tj = 150°C
0.01
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
3.0
e
c
n
a
t
s
i
s
e
R
n
O
e
c
r
u
o
S
-
o
t
-
n
i
a
r
D
,
)
n
o
(
S
D
R
ID = 15A
V
= 10V
GS
2.5
2.0
)
d
e
z
i
1.5
l
a
m
r
o
N
(
1.0
0.5
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
vs. Temperature
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