Vishay IRFB16N60L Data Sheet

SMPS MOSFET

S

D

G

Trr

Absolute Ma ximu m R atings

Continuous Drain Current, V

@ 10V

= 100°C

Continuous Drain Current, V

@ 10V

Pulsed Drain Current

c

Peak Diode Recovery dv/dt

e

11

V/ns

Diode Characteristics

Units

c

f

TJ = 125°C, di/dt = 100A/µs

f

TJ = 125°C, di/dt = 100A/µs

f

I

)

PD - 94631A

IRFB16N60L

Applications

HEXFET® Power MOSFET

• Zero Voltage Switching SMPS

V

• Telecom and Server Power Supplies

• Uninterruptible Power Supplies

DSSRDS(on)

600V

385m

• Motor Control applications

Features and Benefits

• SuperFast body diode eliminates the need for external diodes in ZVS applications.

• Lower Gate charge results in simpler drive requirements.

• Enhanced dv/dt capabilities offer improved ruggedness.

• Higher Gate voltage threshold offers improved noise immunity

Parameter Max. Units

ID @ TC = 25°C I

@ T

D

C

I

DM

P

@TC = 25°C

D

V

GS

dv/dt T

J

T

STG

GS GS

Power Dissipation 310 W Linear Derating Factor 2.5 W/°C

Gat e-to-So urc e Voltage ±30 V

Operating Junction and -55 to + 150 Storage Temperature Range °C

Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torque, 6-32 or M3 screw 1.1(10) N•m (lbf•in)

16 10 A 60

typ.

Ω 130ns 16A

.

TO-220AB

I

D

Symbol Parameter M in. Typ. Max.

I

S

I

SM

V

SD

t

rr

Q

rr

RRM

t

on

www.irf.com 1

Co nd itio ns

Continuous Source Current ––– ––– 16 MOSFET symbol (Body Diode) A showing the

Pu lsed Sourc e C urrent ––– ––– 60 in te g ra l re v e rs e (Body Diode) Diode Forward Voltage ––– ––– 1.5 V Reverse Recovery Time ––– 130 200 ns

Reverse Recovery Charge ––– 450 670 nC

Reverse Recovery Current ––– 5.8 8.7 A Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD



––– 240 360

––– 1080 1620

p-n junction diode.

= 25°C, IS = 16A, VGS = 0V

T

J

= 25°C, IF = 16A

T

J

= 25°C, IS = 16A, VGS = 0V

T

J

= 25°C

T

J

10/19/04

IRFB16N60L

V

/∆T

R

V

I

R

Q

t

C

eff.

C

eff. (ER)

EASSingl e Puls e Avalanche En ergy.

d

IARAvalanche Current

c

EARRepe titive Ava lanche Energy

c

R

Junction-to-Case

h

R

Junction-to-Ambient

h

Static @ TJ = 25°C (unless otherw ise specified)

Symbol Parameter Min. Typ. Max. Units

(BR)DSS

∆

DS(on) GS(th)

DSS

GSS

G

(BR)DSS

Drain-to-Source Breakdown V oltage 600 ––– ––– V Breakdo w n Voltage Temp. Coef ficient ––– 0.3 9 ––– V/°C

J

Static Dr ain-to-Source On-Resi stance ––– 3 85 460 Gate Threshold Voltage 3.0 ––– 5.0 V Drain-to- Source Leakage Current ––– ––– 50 µA

––– ––– 2.0 mA Gate-to-Sourc e Forward Leakage ––– ––– 100 nA Gate-to-Source Reverse Leakage ––– – –– -100 Internal Gate Resistance ––– 0.79 –––

VGS = 0V, ID = 250µA Re ferenc e to 25°C , I V

Ω

m

GS

V

DS

V

DS

V

DS

V

GS

V

GS

Ω

f = 1MHz, open drain

Dynamic @ TJ = 25°C (unless otherw ise specified)

Symbol Parameter Min. Typ. Max. Units

gfs Forwa rd Tr a nsconductance 8.3 ––– ––– S

g gs

gd d(on) r d(off) f

iss

oss

rss

oss

Total Gate Charge ––– ––– 100 Gate-to-Source Charge ––– ––– 30 nC Gate-to-Drain ("Miller") Charge ––– ––– 46 Turn-On Delay Time ––– 20 ––– Rise Time ––– 44 ––– ns Turn-Off Delay Time ––– 28 ––– Fall Time ––– 5.5 ––– Input Capacitance ––– 2720 ––– Output Capacitance ––– 260 ––– Rever se Transfer C apacitanc e ––– 20 ––– pF Effective Output Capaci t ance ––– 120 ––– Effective Output Capacitance ––– 100 –––

(Energy Related)

VDS = 50V, ID = 9.0A

= 16A

I

D

V

DS

V

GS

VDD = 300V ID = 16A R

G

V

GS

VGS = 0V V

DS

ƒ = 1.0MHz, See F i g. 5 V

GS

Avalanche Characteristics

Symbol Parameter Typ. Units

––– mJ



––– A ––– mJ

Thermal Resistan ce

Symbol Parameter Typ. Units

JC

θ

JA

θ

––– °C/W ––– 62

Conditions

= 1mA

D

= 10V, ID = 9.0A

f

= VGS, ID = 250µA = 600V, VGS = 0V = 480V, VGS = 0V, TJ = 125°C

= 30V = -30V

Conditions

= 480V

= 10V, See Fig . 7 & 15

Ω

= 1.8

= 10V, See Fig . 11a & 11b

= 25V

= 0V,VDS = 0V to 480V

Max.

310

16 31

Max.

0.4

f

g

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature. (See Fig. 12)

 Starting T

I

AS

 I

SD

TJ ≤ 150°C.

2 www.irf.com

= 25°C, L = 2.5mH, RG = 25Ω,

J

= 16A.(See Figure 14a)

≤ 16A, di/dt ≤ 650A/µs, V

DD

≤ V

(BR)DSS

 Pulse width ≤ 300µs; duty cycle ≤ 2%.  C

eff. is a fixed capacitance that gives the same charging time

oss

as C

while VDS is rising from 0 to 80% V

oss

C

eff.(ER) is a fixed capacitance that stores the same energy

oss

as C

while VDS is rising from 0 to 80% V

,

oss

 R

is measured at TJ approximately 90°C

θ

DSS

. .

IRFB16N60L

1000

TOP 15V

100

) A

(

t

n

e

r

10

r

u C e

c

r

u

o S

-

o

t

-

n

i

a

r D

,

D

I

BOTTOM 5.0V

1

0.1

0.01

VGS 12V

10V

9.0V

8.0V

7.0V

6.0V

5.0V

20µs PULSE WIDTH Tj = 25°C

0.001

0.1 1 10 100

VDS, Drain-to-Source Voltage (V)

1000

)

Α

100

(

t

n

e

r

u C

10

e

c

r

u

o S

-

1

o

t

-

n

i

a

r D

,

0.1

D

I

TJ = 25°C

TJ = 150°C

V

= 50V

DS

20µs PULSE WIDTH

0.01 4 6 8 10 12 14 16

VGS, Gate-to-Source Voltage ( V)

100

TOP 15V

) A

(

t

10

n

e

r

u C e

c

r

u

o S

-

o

t

-

n

i

a

r D

,

D

I

BOTTOM 5.0V

1

0.1

VGS 12V

10V

9.0V

8.0V

7.0V

6.0V

5.0V

20µs PULSE WIDTH Tj = 150°C

0.01

0.1 1 10 100

VDS, Drain-to-Source Voltage (V)

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

3.0

e

c

n

a

t

s

i

s

e R n O e

c

r

u

o S

-

o

t

-

n

i

a

r D

,

)

n

o

( S D

R

ID = 15A V

= 10V

GS

2.5

2.0

)

d

e

z

i

1.5

l

a m

r

o N

(

1.0

0.5

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ , Junction Temperature (°C)

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance

vs. Temperature

www.irf.com 3

IRFB16N60L

100000

10000

) F

p

(

e

1000

c

n

a

t

i

c

a

p

100

a C

, C

10

1

V

= 0V, f = 1 MHZ

GS

C

= C

iss rss oss

= C

gs

gd

ds

C

rss

C C

1 10 100 1000

VDS, Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance vs.

Drain-to-Source Voltage

12.0 ID= 15A

)

10.0

V

( e

g

a

t

l

8.0

o V

e

c

r

u

6.0

o S

-

o

t

-

e

t

4.0

a G

,

S G

2.0

V

0.0 0 10203040506070

Q

VDS= 480V VDS= 300V VDS= 120V

Total G ate Charge (nC)

G

+ Cgd, C

+ C

gd

iss

oss

SHORTED

ds

)

J

µ

( y

g

r

e

n E

100.00

) A

(

t

n

e

r

10.00

r

u C n

i

a

r D e

s

r

e

v

1.00

e R

,

D S

I

0.10

25

20

15

10

5

0

0 100 200 300 400 500 600 700

V

Drain-to-Source Voltage (V)

DS,

Fig 6. Typ. Output Capacitance

Stored Energy vs. V

TJ = 150°C

TJ = 25°C

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VSD, Source-to-Drain Voltage (V)

DS

V

GS

= 0V

Fig 7. Typical Gate Charge vs.

Gate-to-Source Voltage

Fig 8. Typical Source-Drain Diode

Forward Voltage

4 www.irf.com

IRFB16N60L

+

-

V 9

1 V

1000

OPERATION IN THIS AREA

) A

(

t

n

e

r

u C e

c

r

u

o S

-

o

t

-

n

i

a

r D ,

I

100

10

1

D

Tc = 25°C Tj = 150°C Single Pulse

LIMITED BY RDS(on)

100µsec

1msec

10msec

0.1 1 10 100 1000 10000

VDS, Drain-to-Source Voltage (V)

Fig 9. Maximum Safe Operating Area

18 16 14

) A

(

12

t

n

e

r

10

u C n

i

8

a

r D

6

,

D

I

4 2 0

25 50 75 100 125 150

TC , Case Temper ature (°C)

Fig 10. Maximum Drain Current vs.

Case Temperature

R

D.U.T.

D

V

DD

DS

0%

GS

t

d(on)tr

t

d(off)tf

Fig 11b. Switching Time Waveforms

V

DS

V

GS

R

G

10V

Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 %

Fig 11a. Switching Time Test Circuit

www.irf.com 5

IRFB16N60L

1

)

C

J

h

t

Z (

e

s

n

o

p

s

e R

l

a m

r

e

h T

0.001

0.1

0.01

D = 0.50

0.20

0.10

0.05

0.02

0.01 SINGLE PULSE

( THERMAL RESPONSE )

1E-006 1E-005 0.0001 0.001 0.01 0.1 1

Notes:

1. Duty factor D = t / t

2. Peak T = P x Z + T

J DM thJC C

1 2

P

DM

t

t1 , Rectangular Pulse Duration (sec)

Fig 12. Maximum Effective Transient Thermal Impedance, Junction-to-Case

1

t

2

5.0

) V

(

4.5

e

g

a

t

l

o

4.0

V d

l

o

h

s

3.5

e

r

h

t e

t

a

3.0

G

)

h

t

( S

2.5

G

V

2.0

-75 -50 -25 0 25 50 75 100 125 150 175

ID = 250µA

TJ , Temperature ( °C )

Fig 13. Threshold Voltage vs. Temperature

6 www.irf.com

IRFB16N60L

S

Current Regulator

I

A

V

600

)

J m

( y

500

g

r

e

n E

e

400

h

c

n

a

l

a

v

300

A e

s

l

u P

200

e

l

g

n

i S

100

,

S A

E

0

25 50 75 100 125 150

TOP 7.2A

BOTTOM16A

Starting TJ , Junction Temperature (°C)

Fig 14a. Maximum Avalanche Energy

vs. Drain Current

15V

V

DS

L

DRIVER

I

D

10A

t

V

(BR)DSS

p

R

G

20V

Fig 14b. Unclamped Inductive Test Circuit

12V

V

GS

Fig 15a. Gate Charge Test Circuit

D.U.T

I

AS

0.01

t

p

Same Type as D.U.T.

.2µF

Ω

50KΩ

.3µF

3mA

Current Sampling Resistors

+

V

DD

-

AS

Fig 14c. Unclamped Inductive Waveforms

Q

G

VGS V

Q

GS

D.U.T.

+

V

D

-

G

I

G

D

Q

GD

Charge

Fig 15b. Basic Gate Charge Waveform

www.irf.com 7

IRFB16N60L

R V

+

-

Peak Diode Recovery dv/dt Test Circuit

+





D.U.T

-

R

G

Driver Gate Drive

P.W.

+

Circuit Layout Considerations

• Low Stray Inductance



• Ground Plane

• Low Leakage Inductance Current Transformer

-

• dv/dt controlled by R

• Driver same type as D.U.T.

G

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

Period

D =



P.W.

Period

+

V

DD

VGS=10V

*

D.U.T. ISDWaveform

Reverse Recovery Current

e-Applied

oltage

D.U.T. VDSWaveform

Inductor Curent

* V

= 5V for Logic Level Devices

GS

Body Diode Forward

Current

di/dt

Diode Recovery

dv/dt

Body Diode Forward Drop

Ripple ≤ 5%

V

DD

I

SD

Fig 16. For N-Channel HEXFET® Power MOSFETs

8 www.irf.com

K

TO-220AB Package Outline

R

Dimensions are shown in millimeters (inches)

IRFB16N60L

10.54 (.415)

2.87 (.113)

2.62 (.103)

15.24 (.600)

14.84 (.584)

14.09 (.555)

13.47 (.530)

1.40 (.055)

3X

1.15 (.045)

2.54 (.100)

NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.

2X

10.29 (.405)

4

1 2 3

3.78 (.149)

3.54 (.139)

- A -

6.47 (.255)

6.10 (.240)

1.15 (.045) MIN

4.06 (.160)

3.55 (.140)

0.93 (.037)

3X

0.69 (.027)

0.36 (.014) M B A M

4.69 (.185)

4.20 (.165)

- B -

1.32 (.052)

1.22 (.048)

2.92 (.115)

2.64 (.104)

3X

LEAD ASSIGNMENTS

HEXFET

1 - GATE 2 - DRAIN

1- GATE

3 - SOURCE

2- DRAIN 3- SOURCE

4 - DRAIN

4- DRAIN

0.55 (.022)

0.46 (.018)

TO-220AB Part Marking Information

EXAMPLE:

THIS IS AN IRF1010 LOT CODE 1789 ASSEMBLED ON WW 19, 1997 IN THE ASS E MBLY LINE "C"

Note: "P" in assembly line position indicates "Lead-Free"

INTERNATIONAL

RECTIFIER

LOGO

ASSEMBLY LOT CODE

IGBTs, CoPAC 1- GATE

2- COLLECTOR 3- EMITTER 4- COLLECTOR

PART NUMBE

DATE CODE YE AR 7 = 1997 WEEK 19 LINE C

TO-220AB package is not recommended for Surface Mount Application.

Data and specifications subject to change without notice.

This product has been designed and qualified for the Automotive [Q101] market.

Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.10/04

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Vishay IRFB16N60L Data Sheet

Specifications and Main Features

Frequently Asked Questions

User Manual