Vishay IRF9Z30, SiHF9Z30 Data Sheet

www.vishay.com

S

G

D

P-Channel MOSFET

TO-220AB

G

D

S

IRF9Z30, SiHF9Z30

Vishay Siliconix

Power MOSFET

PRODUCT SUMMARY

VDS (V) - 50

R

()V

DS(on)

Q

(Max.) (nC) 39

g

Q

(nC) 10

gs

Q

(nC) 15

gd

Configuration Single

= - 10 V 0.14

GS

FEATURES

• P-Channel Versatility

• Compact Plastic Package

• Fast Switching

• Low Drive Current

• Ease of Paralleling

• Excellent Temperature Stability

• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912

Note

* Lead (Pb)-containing terminations are not RoHS-compliant.

Exemptions may apply.

DESCRIPTION

The power MOSFET technology is the key to Vishay’s
advanced line of power MOSFET transistors. The efficient
geometry and unique processing of the power MOSFET
design achieve very low on-state resistance combined with
high transconductance and extreme device ruggedness.

The p-channel power MOSFET’s are designed for
application which require the convenience of reverse
polarity operation. They retain all of the features of the more
common n-channel Power MOSFET’s such as voltage
control, very fast switching, ease of paralleling, and
excellent temperature stability.

P-channel power MOSFETs are intended for use in power
stages where complementary symmetry with n-channel
devices offers circuit simplification. They are also very useful
in drive stages because of the circuit versatility offered by
the reverse polarity connection. Applications include motor
control, audio amplifiers, switched mode converters, control
circuits and pulse amplifiers.

ORDERING INFORMATION

Package TO-220AB

Lead (Pb)-free

SnPb

IRF9Z30PbF

SiHF9Z30-E3

IRF9Z30

SiHF9Z30

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

Gate-Source Voltage V

T

= 25 °C

Continuous Drain Current V

Pulsed Drain Current

Linear Derating Factor 0.59 W/°C

Inductive Current, Clamped L = 100 μH I

Unclamped Inductive Current (Avalanche Current) I

Maximum Power Dissipation T

Operating Junction and Storage Temperature Range T

Soldering Recommendations (Peak Temperature) for 10 s 300

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 14).
b. V

= - 25 V, starting TJ = 25 °C, L =100 μH, Rg = 25 

DD

c. 0.063" (1.6 mm) from case.

S12-3048-Rev. A, 24-Dec-12

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

a

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at - 10 V

GS

C

= 100 °C - 11

C

= 25 °C P

C

1

DS

± 20

GS

I

D

IDM - 60

LM

L

D

, T

J

stg

- 50

- 18

- 60 A

- 3.1 A

74 W

- 55 to + 150

c

Document Number: 91459

V

AT

°C

IRF9Z30, SiHF9Z30

S

D

G

www.vishay.com

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient R

Maximum Junction-to-Case (Drain) R

thJA

thJC

-80

-1.7

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

Gate-Source Threshold Voltage V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

Drain-Source On-State Resistance R

Forward Transconductance g

Dynamic

Input Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Gate-Drain Charge Q

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Drain-Source Body Diode Characteristics

DS

GS(th)

V

GSS

DSS

VGS = - 10 V ID = - 9.3 A

DS(on)

fs

iss

- 570 -

oss

- 140 -

rss

g

-6.910

gs

-9.715

gd

d(on)

r

-2132

d(off)

-6496

f

VGS = 0 V, ID = - 250 μA - 50 - -

VDS = VGS, ID = - 250 μA - 2.0 -

= ± 20 V - - ± 500

GS

VDS = max. rating, VGS = 0 V - - - 250

= max. rating x 0.8, VGS = 0 V,

V

DS

T

=125 °C

J

VDS = 2 x VGS, IDS = - 9 A

b

b

VGS = 0 V,

V

= - 25 V,

DS

f = 1.0 MHz, see fig. 9

= - 18 A, VDS = - 0.8

I

V

= - 10 V

GS

V

R

= 13 , RD = 1.3, see fig. 16

g

(MOSFET switching times are

D

max. rating. see fig. 17

= - 25 V, ID = - 18 A,

DD

essentially independent of operating

temperature)

Vishay Siliconix

°C/W

- 4.0 V

- - - 1000

- 0.093 0.14

3.1 4.7 -

- 900 -

-2639

-1218

- 110 170

V

nA

μA



S

pFOutput Capacitance C

nC Gate-Source Charge Q

ns

Continuous Source-Drain Diode Current I

Pulsed Diode Forward Current

a

Body Diode Voltage V

Body Diode Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

S

MOSFET symbol
showing the 
integral reverse

I

SM

SD

rr

rr

p - n junction diode

TJ = 25 °C, IS = - 18 A, VGS = 0 V

b

TJ = 25 °C, IF = - 18 A, dI/dt = 100 A/μs

--- 18

--- 60

--- 6.3

54 120 250

b

0.20 0.47 1.1

A

V

ns

μC

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 14).
b. Pulse width  300 μs; duty cycle  2 %.

S12-3048-Rev. A, 24-Dec-12

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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Document Number: 91459

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0 5 10 15 20 25

- 8 V

80 μs Pulse Test

- 7 V

VGS = - 5 V

25

20

15

10

5

0

- 4 V

- 5 V

- 10 V

- VDS, Drain-to-Source Voltage (V)

- I

D

, Drain Current (A)

10

2

10

1

0

- V

GS

,

Gate-to-Source Voltage (V)

- I

D

, Drain Current (A)

0.1

5

2

5

2

5

2

246

8

10

80 µs Pulse Test
V

DS

= 2 x V

GS

TJ = 25 °C

TJ = 150 °C

- V

DS

,

Drain-to-Source Voltage (V)

- I

D

, Drain Current (A)

- 10 V

- 8 V

- 7 V

VGS = - 5 V

- 5 V

- 4 V

80 μs Pulse Test

0

1

2

3

4

5

25

20

15

10

5

0

- VDS, Drain-to-Source Voltage (V)

- I

D

, Drain Current (A)

Operation in this Area Limited
by R

DS(on)

SiHF9Z30

SiHF9Z32

SiHF9Z30

SiHF9Z32

TC = 25 °C
T

J

= 150 °C

Single Pulse

10 μs

100 μs

1 μs

10 μs

DC

1

2

510

2

5

10

2

1

5

2

10

2

5

10

2

2

5

10

3

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

IRF9Z30, SiHF9Z30

Vishay Siliconix

Fig. 1 - Typical Output Characteristics

Fig. 2 - Typical Transfer Characteristics

Fig. 3 - Typical Saturation Characteristics

Fig. 4 - Maximum Safe Operating Area

S12-3048-Rev. A, 24-Dec-12

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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80 μs Pulse Test
V

DS

= 2 x V

GS

TJ = 25 ° C

TJ = 150 °C

04

8

12 20

10

8

6

4

2

0

15

- ID, Drain Current (A)

g

fs

, Transconductance (S)

- VSD, Source-to-Drain Voltage (V)

- I

SD

, Reverse Drain Current (A)

TJ = 25 °C

T

J

= 150 °C

0

2

4

68

10

10

2

5

2

10

5

2

1

5

2

0.1

IRF9Z30, SiHF9Z30

1.25

ID = 1 mA

1.15

1.05

0.95

Voltage (Normalized)

0.85

, Drain-to-Source Breakdown

DS

V

0.75

- 60 - 40 - 20 0 20 40 60 80 100

TJ, Junction Temperature (°C)

Vishay Siliconix

140 160

120

Fig. 5 - Typical Transconductance vs. Drain Current

Fig. 6 - Typical Source-Drain Diode Forward Voltage

Fig. 7 - Breakdown Voltage vs. Temperature

3.0

I

= - 18 A

D

= - 10 V

V

GS

2.4

1.8

1.2

(Normalized)

0.6

, Drain-to-Source On Resistance

DS(on)

0.0

R

- 60 - 40 - 20 0 20 40 60 80 100 120 140 160

TJ, Junction Temperature (°C)

Fig. 8 - Normalized On-Resistance vs. Temperature

S12-3048-Rev. A, 24-Dec-12

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Capacitance (pF)

- V

DS

,

Drain-to-Source Voltage (V)

C

iss

C

oss

C

rss

1

2

5

2

10

2

10

5

0

800

1200

1600

2000

400

V

GS

= 0 V, f = 1 MHz

C

iss

= Cgs + Cgd, Cds Shorted

C

rss

= C

gd

C

oss

= Cds + C

gd

80 μ

s Pulse Test

VGS = - 10 V

VGS = - 20 V

0

12 24 36 48

60

0.4

0.8

1.2

1.6

2.0

- I

D

, Drain Current (A)

R

DS(on)

, Drain to Source on Resistance

0.0

- I

D

, Drain Current (A)

TC, Case Temperature (°C)

25 1501251007550

SiHF9Z32

SiHF9Z30

0

4

8

12

16

20

IRF9Z30, SiHF9Z30

Vishay Siliconix

Fig. 9 - Typical Capacitance vs. Drain-to-Source Voltage

20

ID = - 18 A

16

12

, Gate-to-Source Voltage (V)

GS

- V

8

4

0

020

10

VDS = - 40 V

For test circuit
see gure 17

30 40 50

Qg, Total Gate Charge (nC)

Fig. 10 - Typical Gate Charge vs. Gate-to-Source Voltage

Fig. 11 - Typical On-Resistance vs. Drain Current

Fig. 12 - Maximum Drain Current vs. Case Temperature



S12-3048-Rev. A, 24-Dec-12

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Document Number: 91459

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Vary tp to obtain
required peak I

L

VDD = 0 5 8 V

DS

EC = 0 75 BV

DS

-

+

V

DD

L

E

C

DUT

I

L

VGS = - 10 V

t

p

0.05 Ω

V

DSS

10

1

0.1

10

-2

10

-5

10

-4

10

-3

10

-2

0.1 1 10

t1, Rectangular Pulse Duration (s)

Thermal Response (Z

thJC

)

0 = 0.5

0.2

0.1

0.05

0.02

0.01

Single Pulse
(Thermal Response)

P

DM

t

1

t

2

Notes:

1. Duty Factor, D = t

1/t2

2. Peak Tj = PDM x Z

thJC

+ T

C

-

+

R

D

D.U.T

R

G

PS

Vary I

P

to obtain

required peak I

L

VGS = - 10 V

t

p

12 V
battery

0.2 μF

50 kΩ

0.3 μF

Current
regulator

- V

DS

(Isolated

supply)

Same type

as D.U.T

D.U.T

D

G

S

I

D

I

G

Current
sampling
resistor

Current
sampling
resistor

+ V

DS

- 1.5 mA

IRF9Z30, SiHF9Z30

Vishay Siliconix

V

DD

I

L

t

p

V

DS

Fig. 13a - Unclamped Inductive Test Circuit

Fig. 14 - Maximum Effective Transient Thermal Impedance, Junction-to-Case vs. Pulse Duration

Fig. 13b - Unclamped Inductive Load Test Waveforms











Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91459

S12-3048-Rev. A, 24-Dec-12

Fig. 15 - Switching Time Test Circuit Fig. 16 - Gate Charge Test Circuit

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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

.

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Document Number: 91459

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M

*

3

2

1

L

L(1)

D

H(1)

Q

Ø P

A

F

J(1)

b(1)

e(1)

e

E

b

C

Package Information

Vishay Siliconix

TO-220-1

DIM.

A 4.24 4.65 0.167 0.183

b 0.69 1.02 0.027 0.040

b(1) 1.14 1.78 0.045 0.070

c 0.36 0.61 0.014 0.024

D 14.33 15.85 0.564 0.624

E 9.96 10.52 0.392 0.414

e 2.41 2.67 0.095 0.105

e(1) 4.88 5.28 0.192 0.208

F 1.14 1.40 0.045 0.055

H(1) 6.10 6.71 0.240 0.264

J(1) 2.41 2.92 0.095 0.115

L 13.36 14.40 0.526 0.567

L(1) 3.33 4.04 0.131 0.159

Ø P 3.53 3.94 0.139 0.155

Q 2.54 3.00 0.100 0.118

ECN: X15-0364-Rev. C, 14-Dec-15
DWG: 6031

Note

• M* = 0.052 inches to 0.064 inches (dimension including
protrusion), heatsink hole for HVM

MILLIMETERS INCHES

MIN. MAX. MIN. MAX.

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Revison: 14-Dec-15

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ASE Xi’an

For technical questions, contact: [e-mail]

Package Picture

1

Document Number: 66542

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

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Revision: 13-Jun-16

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Document Number: 91000