Vishay IRF9Z30, SiHF9Z30 Data Sheet

IRF9Z30, SiHF9Z30

www.vishay.com	Vishay Siliconix
	Power MOSFET

PRODUCT SUMMARY

VDS (V)

- 50

RDS(on) ( )

VGS = - 10 V

0.14

Qg (Max.) (nC)

39

Qgs (nC)

10

Qgd (nC)

15

Configuration

Single

S

TO-220AB

G

S

D

G

D

P-Channel MOSFET

FEATURES

• P-Channel Versatility

• Compact Plastic Package

• Fast Switching

• Low Drive Current

•Ease of Paralleling

•Excellent Temperature Stability

•Material categorization: For definitions of compliance please see www.vishay.com/doc?99912

Note

*Lead (Pb)-containing terminations are not RoHS-compliant. Exemptions may apply.

DESCRIPTION

The power MOSFET technology is the key to Vishay’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of the power MOSFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness.

The p-channel power MOSFET’s are designed for application which require the convenience of reverse polarity operation. They retain all of the features of the more common n-channel Power MOSFET’s such as voltage control, very fast switching, ease of paralleling, and excellent temperature stability.

P-channel power MOSFETs are intended for use in power stages where complementary symmetry with n-channel devices offers circuit simplification. They are also very useful in drive stages because of the circuit versatility offered by the reverse polarity connection. Applications include motor control, audio amplifiers, switched mode converters, control circuits and pulse amplifiers.

ORDERING INFORMATION

	Package	TO-220AB
	Lead (Pb)-free	IRF9Z30PbF
		SiHF9Z30-E3
	SnPb	IRF9Z30
		SiHF9Z30

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER				SYMBOL	LIMIT	UNIT
Drain-Source Voltage				VDS	- 50	V
Gate-Source Voltage				VGS	± 20
Continuous Drain Current		VGS at - 10 V	TC = 25 °C	ID	- 18
			TC = 100 °C		- 11	A
Pulsed Drain Currenta				IDM	- 60
Linear Derating Factor					0.59	W/°C
Inductive Current, Clamped		L = 100 μH		ILM	- 60	A
Unclamped Inductive Current (Avalanche Current)				IL	- 3.1	A
Maximum Power Dissipation		TC = 25 °C		PD	74	W
Operating Junction and Storage Temperature Range				TJ, Tstg	- 55 to + 150	°C
Soldering Recommendations (Peak Temperature)		for 10 s			300c

Notes

a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 14).

b.VDD = - 25 V, starting TJ = 25 °C, L =100 μH, Rg = 25

c.0.063" (1.6 mm) from case.

S12-3048-Rev. A, 24-Dec-12	1	Document Number: 91459
	For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF9Z30, SiHF9Z30

	www.vishay.com				Vishay Siliconix
	THERMAL RESISTANCE RATINGS
	PARAMETER	SYMBOL	TYP.	MAX.	UNIT
	Maximum Junction-to-Ambient	RthJA	-	80	°C/W
	Maximum Junction-to-Case (Drain)	RthJC	-	1.7

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = - 250 μA

- 50

-

-

V

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = - 250 μA

- 2.0

-

- 4.0

V

Gate-Source Leakage

IGSS

VGS = ± 20 V

-

-

± 500

nA

VDS = max. rating, VGS = 0 V

-

-

- 250

Zero Gate Voltage Drain Current

IDSS

μA

VDS = max. rating x 0.8, VGS = 0 V,

-

-

- 1000

TJ =125 °C

Drain-Source On-State Resistance

RDS(on)

VGS = - 10 V

ID = - 9.3 Ab

-

0.093

0.14

Forward Transconductance

g

fs

V = 2 x V

GS

, I

= - 9 Ab

3.1

4.7

-

S

DS

DS

Dynamic

Input Capacitance

Ciss

VGS = 0 V,

-

900

-

Output Capacitance

Coss

pF

VDS = - 25 V,

-

570

-

f = 1.0 MHz, see fig. 9

Reverse Transfer Capacitance

Crss

-

140

-

Total Gate Charge

Qg

ID = - 18 A, VDS = - 0.8

-

26

39

Gate-Source Charge

Qgs

VGS = - 10 V

-

6.9

10

nC

max. rating. see fig. 17

Gate-Drain Charge

Qgd

-

9.7

15

Turn-On Delay Time

td(on)

VDD = - 25 V, ID = - 18 A,

-

12

18

Rise Time

tr

Rg = 13 , RD = 1.3 , see fig. 16

-

110

170

(MOSFET switching times are

ns

Turn-Off Delay Time

td(off)

-

21

32

essentially independent of operating

Fall Time

tf

temperature)

-

64

96

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current		IS	MOSFET symbol		D	-	-	- 18
			showing the					A
			integral reverse	G
Pulsed Diode Forward Current	a	ISM				-	-	- 60
			p - n junction diode		S

	Body Diode Voltage	V	T = 25 °C, I	S	= - 18 A, V	GS	= 0 Vb	-	-	- 6.3	V
		SD	J
	Body Diode Reverse Recovery Time	trr	TJ = 25 °C, IF = - 18 A, dI/dt = 100 A/μsb					54	120	250	ns
	Body Diode Reverse Recovery Charge	Qrr						0.20	0.47	1.1	μC

Notes

a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 14).

b.Pulse width 300 μs; duty cycle 2 %.

S12-3048-Rev. A, 24-Dec-12	2	Document Number: 91459
	For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF9Z30, SiHF9Z30

www.vishay.com	Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

<![if ! IE]>

<![endif]>- ID, Drain Current (A)

25

- 10 V

80 μs Pulse Test

20

- 8 V

15

- 7 V

10

	VGS = - 5 V
5
	- 5 V
0	- 4 V

0 5 10 15 20 25

	25
	80 μs Pulse Test
<![if ! IE]> <![endif]>(A)	20				- 10 V
<![if ! IE]> <![endif]>Current	15				- 8 V
<![if ! IE]> <![endif]>, Drain	10				- 7 V
<![if ! IE]> <![endif]>D
<![if ! IE]> <![endif]>- I	5				VGS = - 5 V
					- 5 V
	0				- 4 V
				3	4
	0	1	2			5

- VDS, Drain-to-Source Voltage (V)	- VDS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics	Fig. 3 - Typical Saturation Characteristics

<![if ! IE]>

<![endif]>- ID, Drain Current (A)

102
		80 µs Pulse Test
5		V	DS		= 2 x V		GS
2
10
5
2
1
5
2				T	J = 150 °C							TJ = 25 °C
0.1
0					2					4		6			8			10

- VGS, Gate-to-Source Voltage (V)

103

5		Operation in this Area Limited
		by RDS(on)

<![if ! IE]> <![endif]>(A)	2
<![if ! IE]> <![endif]>Current	102	SiHF9Z30
						10 μs
	5	SiHF9Z32				100 μs
<![if ! IE]> <![endif]>, Drain	2	SiHF9Z30
	10	SiHF9Z32					1 μs
<![if ! IE]> <![endif]>D
<![if ! IE]> <![endif]>- I	5					10 μs
		TC = 25 °C
	2
		TJ = 150 °C					DC
	1	Single Pulse
	1	2	5	10	2	5	102

- VDS, Drain-to-Source Voltage (V)

Fig. 2 - Typical Transfer Characteristics

Fig. 4 - Maximum Safe Operating Area

S12-3048-Rev. A, 24-Dec-12	3	Document Number: 91459
	For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000