Vishay IRF9Z30, SiHF9Z30 Data Sheet

www.vishay.com

P-Channel MOSFET

TO-220AB

IRF9Z30, SiHF9Z30

Vishay Siliconix

Power MOSFET

PRODUCT SUMMARY

VDS (V) - 50

()V

DS(on)

(Max.) (nC) 39

(nC) 10

(nC) 15

Configuration Single

= - 10 V 0.14

FEATURES

• P-Channel Versatility

• Compact Plastic Package

• Fast Switching

• Low Drive Current

• Ease of Paralleling

• Excellent Temperature Stability

• Material categorization: For definitions of compliance please see www.vishay.com/doc?99912

Note

* Lead (Pb)-containing terminations are not RoHS-compliant.

Exemptions may apply.

DESCRIPTION

The power MOSFET technology is the key to Vishay’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of the power MOSFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness.

The p-channel power MOSFET’s are designed for application which require the convenience of reverse polarity operation. They retain all of the features of the more common n-channel Power MOSFET’s such as voltage control, very fast switching, ease of paralleling, and excellent temperature stability.

P-channel power MOSFETs are intended for use in power stages where complementary symmetry with n-channel devices offers circuit simplification. They are also very useful in drive stages because of the circuit versatility offered by the reverse polarity connection. Applications include motor control, audio amplifiers, switched mode converters, control circuits and pulse amplifiers.

ORDERING INFORMATION

Package TO-220AB

Lead (Pb)-free

SnPb

IRF9Z30PbF

SiHF9Z30-E3

IRF9Z30

SiHF9Z30

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

Gate-Source Voltage V

= 25 °C

Continuous Drain Current V

Pulsed Drain Current

Linear Derating Factor 0.59 W/°C

Inductive Current, Clamped L = 100 μH I

Unclamped Inductive Current (Avalanche Current) I

Maximum Power Dissipation T

Operating Junction and Storage Temperature Range T

Soldering Recommendations (Peak Temperature) for 10 s 300

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 14). b. V

= - 25 V, starting TJ = 25 °C, L =100 μH, Rg = 25 

c. 0.063" (1.6 mm) from case.

S12-3048-Rev. A, 24-Dec-12

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

For technical questions, contact: hvm@vishay.com

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

at - 10 V

= 100 °C - 11

= 25 °C P

± 20

IDM - 60

, T

stg

- 50

- 18

- 60 A

- 3.1 A

74 W

- 55 to + 150

Document Number: 91459

°C

IRF9Z30, SiHF9Z30

www.vishay.com

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient R

Maximum Junction-to-Case (Drain) R

thJA

thJC

-80

-1.7

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

Gate-Source Threshold Voltage V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

Drain-Source On-State Resistance R

Forward Transconductance g

Dynamic

Input Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Gate-Drain Charge Q

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Drain-Source Body Diode Characteristics

GS(th)

GSS

DSS

VGS = - 10 V ID = - 9.3 A

DS(on)

iss

- 570 -

oss

- 140 -

rss

-6.910

-9.715

d(on)

-2132

d(off)

-6496

VGS = 0 V, ID = - 250 μA - 50 - -

VDS = VGS, ID = - 250 μA - 2.0 -

= ± 20 V - - ± 500

VDS = max. rating, VGS = 0 V - - - 250

= max. rating x 0.8, VGS = 0 V,

=125 °C

VDS = 2 x VGS, IDS = - 9 A

VGS = 0 V,

= - 25 V,

f = 1.0 MHz, see fig. 9

= - 18 A, VDS = - 0.8

= - 10 V

= 13 , RD = 1.3, see fig. 16

(MOSFET switching times are

max. rating. see fig. 17

= - 25 V, ID = - 18 A,

essentially independent of operating

temperature)

Vishay Siliconix

°C/W

- 4.0 V

- - - 1000

- 0.093 0.14

3.1 4.7 -

- 900 -

-2639

-1218

- 110 170

μA



pFOutput Capacitance C

nC Gate-Source Charge Q

Continuous Source-Drain Diode Current I

Pulsed Diode Forward Current

Body Diode Voltage V

Body Diode Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

MOSFET symbol showing the  integral reverse

p - n junction diode

TJ = 25 °C, IS = - 18 A, VGS = 0 V

TJ = 25 °C, IF = - 18 A, dI/dt = 100 A/μs

--- 18

--- 60

--- 6.3

54 120 250

0.20 0.47 1.1

μC

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 14). b. Pulse width  300 μs; duty cycle  2 %.

S12-3048-Rev. A, 24-Dec-12

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

For technical questions, contact: hvm@vishay.com

Document Number: 91459

www.vishay.com

0 5 10 15 20 25

- 8 V

80 μs Pulse Test

- 7 V

VGS = - 5 V

- 4 V

- 5 V

- 10 V

- VDS, Drain-to-Source Voltage (V)

- I

, Drain Current (A)

- V

Gate-to-Source Voltage (V)

- I

, Drain Current (A)

0.1

246

80 µs Pulse Test V

= 2 x V

TJ = 25 °C

TJ = 150 °C

- V

Drain-to-Source Voltage (V)

- I

, Drain Current (A)

- 10 V

- 8 V

- 7 V

VGS = - 5 V

- 5 V

- 4 V

80 μs Pulse Test

- VDS, Drain-to-Source Voltage (V)

- I

, Drain Current (A)

Operation in this Area Limited by R

DS(on)

SiHF9Z30

SiHF9Z32

SiHF9Z30

SiHF9Z32

TC = 25 °C T

= 150 °C

Single Pulse

10 μs

100 μs

1 μs

10 μs

510

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

IRF9Z30, SiHF9Z30

Vishay Siliconix

Fig. 1 - Typical Output Characteristics

Fig. 2 - Typical Transfer Characteristics

Fig. 3 - Typical Saturation Characteristics

Fig. 4 - Maximum Safe Operating Area

S12-3048-Rev. A, 24-Dec-12

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

For technical questions, contact: hvm@vishay.com

Document Number: 91459

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