Vishay IRF9Z24S, SiHF9Z24S, IRF9Z24L, SiHF9Z24L Data Sheet

S
G
D
P-Channel MOSFET
D2PAK (TO-263)
G
D
S
I2PAK (TO-262)
G
D
S
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) - 60
()V
R
DS(on)
Q
(Max.) (nC) 19
g
Q
(nC) 5.4
gs
Q
(nC) 11
gd
Configuration Single
= - 10 V 0.28
GS
FEATURES
Halogen-free According to IEC 61249-2-21 Definition
• Advanced Process Technology
• Surface Mount (IRF9Z24S, SiHF9Z24S)
Low-Profile Through-Hole (IRF9Z24L, SiHF9Z24L)
• 175 °C Operating Temperature
•Fast Switching
• P-Channel
• Fully Avalanche Rated
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
2
PAK is a surface mount power package capable of
The D accommodating die size up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The
2
PAK is suitable for high current applications because of
D its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. The through-hole version (IR9Z24L, SiH9Z24L) is available for low-profile applications.
ORDERING INFORMATION
Package D2PAK (TO-263) D2PAK (TO-263) D2PAK (TO-263) I2PAK (TO-262) Lead (Pb)-free and Halogen-free SiHF9Z24S-GE3 SiHF9Z24STRL-GE3
Lead (Pb)-free
Note
a. See device orientation.
IRF9Z24SPbF IRF9Z24STRLPbF SiHF9Z24S-E3 SiHF9Z24STL-E3
a
SiHF9Z24STRR-GE3a
a
IRF9Z24STRRPbFa IRF9Z24LPbF
a
SiHF9Z24STR-E3
a
-
SiHF9Z24L-E3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
a, e
T
= 25 °C
e
VGS at - 10 V
C
= 100 °C - 7.7
T
C
V V
I
IDM
DS
GS
D
Linear Derating Factor 0.40 W/°C Single Pulse Avalanche Energy Repetitive Avalanche Current Repetitive Avalanche Energy
b, e
a
a
Maximum Power Dissipation
Peak Diode Recovery dV/dt
c, e
Operating Junction and Storage Temperature Range
= 25 °C
T
A
= 25 °C 60 W
T
C
E
AS
I
AR
E
AR
P
D
dV/dt - 4.5 V/ns
, T
T
J
stg
Soldering Recommendations (Peak Temperature) for 10 s 300
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
= - 25 V, starting TJ = 25 °C, L = 2.3 mH, Rg = 25 , IAS = - 11 A (see fig. 12).
b. V
DD
- 11 A, dI/dt 140 A/μs, VDD VDS, TJ 175 °C.
c. I
SD
d. 1.6 mm from case. e. Uses IRF9Z24, SiHF9Z24 data and test conditions.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91091 S11-1063-Rev. C, 30-May-11 1
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
- 60
± 20
- 11
- 44
240 mJ
- 11 A
6.0 mJ
3.7 W
- 55 to + 175
d
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V
A
°C
IRF9Z24S, SiHF9Z24S, IRF9Z24L, SiHF9Z24L
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL MIN. TYP. MAX. UNIT
Maximum Junction-to-Ambient (PCB Mount)
a
Maximum Junction-to-Case (Drain) R
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
V
Temperature Coefficient VDS/TJ Reference to 25 °C, ID = - 1 mA
DS
Gate-Source Threshold Voltage V
Gate-Source Leakage I
Zero Gate Voltage Drain Current I
Drain-Source On-State Resistance R
Forward Transconductance g
Dynamic
Input Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Q
Gate-Drain Charge Q
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
Pulsed Diode Forward Current
Body Diode Voltage V
Drain-Source Body Diode Characteristics
Body Diode Reverse Recovery Time t
Body Diode Reverse Recovery Charge Q
Forward Turn-On Time t
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width  300 μs; duty cycle  2 %. c. Uses IRF9Z24, SiHF9Z24 data and test conditions.
a
R
thJA
thJC
DS
GS(th)
V
GSS
--40 °C/W
--2.5
VGS = 0, ID = - 250 μA - 60 - - V
c
- - 0.056 - V/°C
VDS = VGS, ID = - 250 μA - 2.0 - - 4.0 V
= ± 20 V - - ± 100 nA
GS
VDS = - 60 V, VGS = 0 V - - - 100
DSS
VGS = - 10 V ID = - 6.6 A
DS(on)
fs
iss
- 360 -
oss
-65-
rss
g
--5.4
gs
--11
gd
d(on)
r
-15-
d(off)
-29-
f
S
I
SM
SD
rr
rr
on
V
= - 48 V, VGS = 0 V, TJ = 150 °C - - - 500
DS
VDS = - 25 V, ID = - 6.6 A
VGS = 0 V,
V
= - 25 V,
DS
f = 1.0 MHz, see fig. 5
b
c
- - 0.28
1.4 - - S
- 570 -
c
--19
= - 11 A, VDS = - 48 V,
I
V
GS
= - 10 V
D
see fig. 6 and 13
b, c
-13-
= - 30 V, ID = - 11 A,
V
DD
R
= 18 , RD = 2.5 , see fig. 10
g
MOSFET symbol showing the integral reverse
G
p - n junction diode
TJ = 25 °C, IS = - 11 A, VGS = 0 V
TJ = 25 °C, IF = -11 A, dI/dt = 100 A/μs
b
D
S
b
b, c
-68-
--- 11
--- 44
--- 6.3V
- 100 200 ns
- 320 640 nC
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
μA
pFOutput Capacitance C
nC Gate-Source Charge Q
ns
A
www.vishay.com Document Number: 91091 2 S11-1063-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
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91091_01
20 µs Pulse Width T
C
= 25 °C
- 4.5 V
- VDS, Drain-to-Source Voltage (V)
- I
D
, Drain Current (A)
10
0
10
1
10
1
10
0
Bottom
To p
V
GS
- 15 V
- 10 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
- 4.5 V
10
-1
20 µs Pulse Width V
DS
= - 25 V
10
1
10
0
- I
D
, Drain Current (A)
- V
GS
,
Gate-to-Source Voltage (V)
5678 910
4
25 °C
175 °C
91091_03
I
D
= - 11 A
V
GS
= - 10 V
3.0
0.5
1.0
1.5
2.0
2.5
T
J
,
Junction Temperature (°C)
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
91091_04
- 60 - 40- 20 0 20 40 6080100 120 140 160
180
0.0
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Vishay Siliconix
, Drain Current (A)
D
- I
91091_02
Document Number: 91091 www.vishay.com S11-1063-Rev. C, 30-May-11 3
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Fig. 1 - Typical Output Characteristics
V
To p
GS
- 15 V
- 10 V
1
10
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
Bottom
- 4.5 V
0
10
20 µs Pulse Width T
-1
10
- V
,
DS
0
10
Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics
- 4.5 V
= 175 °C
C
1
10
This document is subject to change without notice.
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
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1250
1000
750
500
0
250
10
0
10
1
Capacitance (pF)
- V
DS
,
Drain-to-Source Voltage (V)
C
iss
C
rss
C
oss
V
GS
= 0 V, f = 1 MHz
C
iss
= Cgs + Cgd, Cds Shorted
C
rss
= C
gd
C
oss
= Cds + C
gd
91091_05
QG, Total Gate Charge (nC)
- V
GS
, Gate-to-Source Voltage (V)
20
16
12
8
0
4
0
5
25
2015
10
V
DS
= - 30 V
For test circuit see figure 13
V
DS
= - 48 V
91091_06
ID = - 11 A
10
1
10
0
- VSD, Source-to-Drain Voltage (V)
- I
SD
, Reverse Drain Current (A)
0.5
4.5
3.52.51.5
25 °C
175 °C
V
GS
= 0 V
91091_07
10
-1
5.5
IRF9Z24S, SiHF9Z24S, IRF9Z24L, SiHF9Z24L
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
2
10
, Drain Current (A)
D
- I
0.1
91091_08
Operation in this area limited by R
5
2
10
5
2
1
5
2
0.1
25
1
25
- VDS, Drain-to-Source Voltage (V)
TC = 25 °C
= 175 °C
T
J
Single Pulse
10
10 µs
100 µs
1 ms
10 ms
25
10
DS(on)
25
2
Fig. 8 - Maximum Safe Operating Area
3
10
This document is subject to change without notice.
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www.vishay.com Document Number: 91091 4 S11-1063-Rev. C, 30-May-11
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
- I
D
, Drain Current (A)
TC, Case Temperature (°C)
0
3
6
9
12
15
91091_09
15025
125
1007550
175
10
1
0.1
10
-2
10
-5
10
-4
10
-3
10
-2
0.1 1 10
P
DM
t
1
t
2
t1, Rectangular Pulse Duration (s)
Thermal Response (Z
thJC
)
Notes:
1. Duty Factor, D = t
1/t2
2. Peak Tj = PDM x Z
thJC
+ T
C
Single Pulse (Thermal Response)
D = 0.50
0.2
0.05
0.02
0.01
91091_11
0.1
R
g
I
AS
0.01 Ω
t
p
D.U.T.
L
V
DS
+
­V
DD
- 10 V
Var y tp to obtain required I
AS
I
AS
V
DS
V
DD
V
DS
t
p
Vishay Siliconix
R
D.U.T.
D
-
+
V
DD
V
DS
V
GS
R
g
- 10 V
Pulse width 1 µs Duty factor 0.1 %
Fig. 10a - Switching Time Test Circuit
Fig. 9 - Maximum Drain Current vs. Case Temperature
t
t
d(on)
V
GS
r
t
d(off)
t
f
10 %
90 %
V
DS
Fig. 10b - Switching Time Waveforms
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms
Document Number: 91091 www.vishay.com S11-1063-Rev. C, 30-May-11 5
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
This document is subject to change without notice.
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Q
GS
Q
GD
Q
G
V
G
Charge
- 10 V
D.U.T.
- 3 mA
V
GS
V
DS
I
G
I
D
0.3 µF
0.2 µF
50 kΩ
12 V
Current regulator
Current sampling resistors
Same type as D.U.T.
+
-
IRF9Z24S, SiHF9Z24S, IRF9Z24L, SiHF9Z24L
Vishay Siliconix
800
600
400
200
, Single Pulse Energy (mJ)
AS
E
91091_12c
VDD = - 25 V
0
25 150
50
Starting TJ, Junction Temperature (°C)
To p
Bottom
125
10075
I
D
- 4.5 A
- 7.8 A
- 11 A
175
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit
www.vishay.com Document Number: 91091 6 S11-1063-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
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Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
D.U.T.
+
-
R
g
Note
Compliment N-Channel of D.U.T. for driver
Driver gate drive
P.W.
+
-
Period
Circuit layout considerations
Low stray inductance
Ground plane
Low leakage inductance
dV/dt controlled by R
I
controlled by duty factor “D”
SD
D.U.T. - device under test
current transformer
-
g
D =
Period
P.W.
+
V
= - 10 V
GS
+
V
DD
-
a
D.U.T. lSD waveform
Reverse recovery current
Re-applied voltage
D.U.T. V
Inductor current
Note
a. V
waveform
DS
= - 5 V for logic level and - 3 V drive devices
GS
Body diode forward
current
Body diode forward drop
Ripple 5 %
dI/dt
Diode recovery
dV/dt
V
DD
I
SD
Fig. 14 - For P-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91091
.
Document Number: 91091 www.vishay.com S11-1063-Rev. C, 30-May-11 7
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THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
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TO-263AB (HIGH VOLTAGE)
(Datum A)
34
E
L1
4
D
L2
4
C
1
B
B
C
3
2
B
B
Package Information
Vishay Siliconix
A
A
5
H
Detail A
B
A
c2
Gauge plane
0° to
L
L3
L4
Detail “A” Rotated 90° CW scale 8:1
H
B
Seating plane
A1
2 x e
Lead tip
2 x b2
2 x b
0.010 A B
MM
Plating
(c)
Section B - B and C - C
c
± 0.004 B
5
b1, b3
(b, b2)
Scale: none
M
Base metal
c1
A
E
D1
4
5
E1
View A - A
4
MILLIMETERS INCHES MILLIMETERS INCHES
DIM. MIN. MAX. MIN. MAX. DIM. MIN. MAX. MIN. MAX.
A 4.06 4.83 0.160 0.190 D1 6.86 - 0.270 -
A1 0.00 0.25 0.000 0.010 E 9.65 10.67 0.380 0.420
b 0.51 0.99 0.020 0.039 E1 6.22 - 0.245 -
b1 0.51 0.89 0.020 0.035 e 2.54 BSC 0.100 BSC
b2 1.14 1.78 0.045 0.070 H 14.61 15.88 0.575 0.625
b3 1.14 1.73 0.045 0.068 L 1.78 2.79 0.070 0.110
c 0.38 0.74 0.015 0.029 L1 - 1.65 - 0.066
c1 0.38 0.58 0.015 0.023 L2 - 1.78 - 0.070
c2 1.14 1.65 0.045 0.065 L3 0.25 BSC 0.010 BSC
D 8.38 9.65 0.330 0.380 L4 4.78 5.28 0.188 0.208
ECN: S-82110-Rev. A, 15-Sep-08 DWG: 5970
Notes
1. Dimensioning and tolerancing per ASME Y14.5M-1994.
2. Dimensions are shown in millimeters (inches).
3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body at datum A.
4. Thermal PAD contour optional within dimension E, L1, D1 and E1.
5. Dimension b1 and c1 apply to base metal only.
6. Datum A and B to be determined at datum plane H.
7. Outline conforms to JEDEC outline to TO-263AB.
Document Number: 91364 www.vishay.com Revision: 15-Sep-08 1
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards.
Revision: 02-Oct-12
1
Document Number: 91000
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