Vishay IRF9Z24S, SiHF9Z24S, IRF9Z24L, SiHF9Z24L Data Sheet

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P-Channel MOSFET

D2PAK (TO-263)

I2PAK (TO-262)

IRF9Z24S, SiHF9Z24S, IRF9Z24L, SiHF9Z24L

Vishay Siliconix

Power MOSFET

PRODUCT SUMMARY

VDS (V) - 60

()V

DS(on)

(Max.) (nC) 19

(nC) 5.4

(nC) 11

Configuration Single

= - 10 V 0.28

FEATURES

• Halogen-free According to IEC 61249-2-21 Definition

• Advanced Process Technology

• Surface Mount (IRF9Z24S, SiHF9Z24S)

•

Low-Profile Through-Hole (IRF9Z24L, SiHF9Z24L)

• 175 °C Operating Temperature

•Fast Switching

• P-Channel

• Fully Avalanche Rated

• Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

PAK is a surface mount power package capable of

The D accommodating die size up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The

PAK is suitable for high current applications because of

D its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. The through-hole version (IR9Z24L, SiH9Z24L) is available for low-profile applications.

ORDERING INFORMATION

Package D2PAK (TO-263) D2PAK (TO-263) D2PAK (TO-263) I2PAK (TO-262) Lead (Pb)-free and Halogen-free SiHF9Z24S-GE3 SiHF9Z24STRL-GE3

Lead (Pb)-free

Note

a. See device orientation.

IRF9Z24SPbF IRF9Z24STRLPbF SiHF9Z24S-E3 SiHF9Z24STL-E3

SiHF9Z24STRR-GE3a

IRF9Z24STRRPbFa IRF9Z24LPbF

SiHF9Z24STR-E3

SiHF9Z24L-E3

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

a, e

= 25 °C

VGS at - 10 V

= 100 °C - 7.7

V V

IDM

Linear Derating Factor 0.40 W/°C Single Pulse Avalanche Energy Repetitive Avalanche Current Repetitive Avalanche Energy

b, e

Maximum Power Dissipation

Peak Diode Recovery dV/dt

c, e

Operating Junction and Storage Temperature Range

= 25 °C

= 25 °C 60 W

dV/dt - 4.5 V/ns

, T

stg

Soldering Recommendations (Peak Temperature) for 10 s 300

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

= - 25 V, starting TJ = 25 °C, L = 2.3 mH, Rg = 25 , IAS = - 11 A (see fig. 12).

b. V

 - 11 A, dI/dt  140 A/μs, VDD  VDS, TJ  175 °C.

c. I

d. 1.6 mm from case. e. Uses IRF9Z24, SiHF9Z24 data and test conditions.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91091 S11-1063-Rev. C, 30-May-11 1

www.vishay.com

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

- 60

± 20

- 11

- 44

240 mJ

- 11 A

6.0 mJ

3.7 W

- 55 to + 175

www.vishay.com/doc?91000

°C

IRF9Z24S, SiHF9Z24S, IRF9Z24L, SiHF9Z24L

Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL MIN. TYP. MAX. UNIT

Maximum Junction-to-Ambient (PCB Mount)

Maximum Junction-to-Case (Drain) R

Note

a. When mounted on 1" square PCB (FR-4 or G-10 material).

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

Temperature Coefficient VDS/TJ Reference to 25 °C, ID = - 1 mA

Gate-Source Threshold Voltage V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

Drain-Source On-State Resistance R

Forward Transconductance g

Dynamic

Input Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Gate-Drain Charge Q

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

Pulsed Diode Forward Current

Body Diode Voltage V

Drain-Source Body Diode Characteristics

Body Diode Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

Forward Turn-On Time t

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width  300 μs; duty cycle  2 %. c. Uses IRF9Z24, SiHF9Z24 data and test conditions.

thJA

thJC

GS(th)

GSS

--40 °C/W

--2.5

VGS = 0, ID = - 250 μA - 60 - - V

- - 0.056 - V/°C

VDS = VGS, ID = - 250 μA - 2.0 - - 4.0 V

= ± 20 V - - ± 100 nA

VDS = - 60 V, VGS = 0 V - - - 100

DSS

VGS = - 10 V ID = - 6.6 A

DS(on)

iss

- 360 -

oss

-65-

rss

--5.4

--11

d(on)

-15-

d(off)

-29-

= - 48 V, VGS = 0 V, TJ = 150 °C - - - 500

VDS = - 25 V, ID = - 6.6 A

VGS = 0 V,

= - 25 V,

f = 1.0 MHz, see fig. 5

- - 0.28 

1.4 - - S

- 570 -

--19

= - 11 A, VDS = - 48 V,

= - 10 V

see fig. 6 and 13

b, c

-13-

= - 30 V, ID = - 11 A,

= 18 , RD = 2.5 , see fig. 10

MOSFET symbol showing the integral reverse

p - n junction diode

TJ = 25 °C, IS = - 11 A, VGS = 0 V

TJ = 25 °C, IF = -11 A, dI/dt = 100 A/μs

b, c

-68-

--- 11

--- 44

--- 6.3V

- 100 200 ns

- 320 640 nC

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

μA

pFOutput Capacitance C

nC Gate-Source Charge Q

www.vishay.com Document Number: 91091 2 S11-1063-Rev. C, 30-May-11

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

91091_01

20 µs Pulse Width T

= 25 °C

- 4.5 V

- VDS, Drain-to-Source Voltage (V)

- I

, Drain Current (A)

Bottom

To p

- 15 V

- 10 V

- 8.0 V

- 7.0 V

- 6.0 V

- 5.5 V

- 5.0 V

- 4.5 V

-1

20 µs Pulse Width V

= - 25 V

- I

, Drain Current (A)

- V

Gate-to-Source Voltage (V)

5678 910

25 °C

175 °C

91091_03

= - 11 A

= - 10 V

3.0

0.5

1.0

1.5

2.0

2.5

Junction Temperature (°C)

DS(on)

, Drain-to-Source On Resistance

(Normalized)

91091_04

- 60 - 40- 20 0 20 40 6080100 120 140 160

180

0.0

IRF9Z24S, SiHF9Z24S, IRF9Z24L, SiHF9Z24L

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Vishay Siliconix

, Drain Current (A)

- I

91091_02

Document Number: 91091 www.vishay.com S11-1063-Rev. C, 30-May-11 3

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

Fig. 1 - Typical Output Characteristics

To p

- 15 V

- 10 V

- 8.0 V

- 7.0 V

- 6.0 V

- 5.5 V

- 5.0 V

Bottom

- 4.5 V

20 µs Pulse Width T

-1

- V

Drain-to-Source Voltage (V)

Fig. 2 - Typical Output Characteristics

- 4.5 V

= 175 °C

This document is subject to change without notice.

Fig. 3 - Typical Transfer Characteristics

Fig. 4 - Normalized On-Resistance vs. Temperature

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1250

1000

750

500

250

Capacitance (pF)

- V

Drain-to-Source Voltage (V)

iss

rss

oss

= 0 V, f = 1 MHz

iss

= Cgs + Cgd, Cds Shorted

rss

= C

oss

= Cds + C

91091_05

QG, Total Gate Charge (nC)

- V

, Gate-to-Source Voltage (V)

2015

= - 30 V

For test circuit see figure 13

= - 48 V

91091_06

ID = - 11 A

- VSD, Source-to-Drain Voltage (V)

- I

, Reverse Drain Current (A)

0.5

4.5

3.52.51.5

25 °C

175 °C

= 0 V

91091_07

-1

5.5

IRF9Z24S, SiHF9Z24S, IRF9Z24L, SiHF9Z24L

Vishay Siliconix

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

Fig. 7 - Typical Source-Drain Diode Forward Voltage

, Drain Current (A)

- I

0.1

91091_08

Operation in this area limited by R

0.1

- VDS, Drain-to-Source Voltage (V)

TC = 25 °C

= 175 °C

Single Pulse

10 µs

100 µs

1 ms

10 ms

DS(on)

Fig. 8 - Maximum Safe Operating Area

This document is subject to change without notice.

www.vishay.com/doc?91000

www.vishay.com Document Number: 91091 4 S11-1063-Rev. C, 30-May-11

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

- I

, Drain Current (A)

TC, Case Temperature (°C)

91091_09

15025

125

1007550

175

0.1

-2

-5

-4

-3

-2

0.1 1 10

t1, Rectangular Pulse Duration (s)

Thermal Response (Z

thJC

)

Notes:

1. Duty Factor, D = t

1/t2

2. Peak Tj = PDM x Z

thJC

+ T

Single Pulse (Thermal Response)

D = 0.50

0.2

0.05

0.02

0.01

91091_11

0.1

0.01 Ω

D.U.T.

- 10 V

Var y tp to obtain required I

IRF9Z24S, SiHF9Z24S, IRF9Z24L, SiHF9Z24L

Vishay Siliconix

D.U.T.

- 10 V

Pulse width ≤ 1 µs Duty factor ≤ 0.1 %

Fig. 10a - Switching Time Test Circuit

Fig. 9 - Maximum Drain Current vs. Case Temperature

d(on)

d(off)

10 %

90 %

Fig. 10b - Switching Time Waveforms

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms

Document Number: 91091 www.vishay.com S11-1063-Rev. C, 30-May-11 5

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

This document is subject to change without notice.

www.vishay.com/doc?91000

Charge

- 10 V

D.U.T.

- 3 mA

0.3 µF

0.2 µF

50 kΩ

12 V

Current regulator

Current sampling resistors

Same type as D.U.T.

IRF9Z24S, SiHF9Z24S, IRF9Z24L, SiHF9Z24L

Vishay Siliconix

800

600

400

200

, Single Pulse Energy (mJ)

91091_12c

VDD = - 25 V

25 150

Starting TJ, Junction Temperature (°C)

To p

Bottom

125

10075

- 4.5 A

- 7.8 A

- 11 A

175

Fig. 12c - Maximum Avalanche Energy vs. Drain Current

Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit

www.vishay.com Document Number: 91091 6 S11-1063-Rev. C, 30-May-11

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

IRF9Z24S, SiHF9Z24S, IRF9Z24L, SiHF9Z24L

Vishay Siliconix

Peak Diode Recovery dV/dt Test Circuit

D.U.T.

Note

• Compliment N-Channel of D.U.T. for driver

Driver gate drive

P.W.

Period

Circuit layout considerations

• Low stray inductance

• Ground plane

• Low leakage inductance

• dV/dt controlled by R

• I

controlled by duty factor “D”

• D.U.T. - device under test

current transformer

D =

Period

P.W.

= - 10 V

D.U.T. lSD waveform

Reverse recovery current

Re-applied voltage

D.U.T. V

Inductor current

Note

a. V

waveform

= - 5 V for logic level and - 3 V drive devices

Body diode forward

current

Body diode forward drop

Ripple ≤ 5 %

dI/dt

Diode recovery

dV/dt

Fig. 14 - For P-Channel

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91091

Document Number: 91091 www.vishay.com S11-1063-Rev. C, 30-May-11 7

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

TO-263AB (HIGH VOLTAGE)

(Datum A)

Package Information

Vishay Siliconix

Detail A

Gauge plane

0° to 8°

Detail “A” Rotated 90° CW scale 8:1

Seating plane

2 x e

Lead tip

2 x b2

2 x b

0.010 A B

Plating

(c)

Section B - B and C - C

± 0.004 B

b1, b3

(b, b2)

Scale: none

Base metal

View A - A

MILLIMETERS INCHES MILLIMETERS INCHES

DIM. MIN. MAX. MIN. MAX. DIM. MIN. MAX. MIN. MAX.

A 4.06 4.83 0.160 0.190 D1 6.86 - 0.270 -

A1 0.00 0.25 0.000 0.010 E 9.65 10.67 0.380 0.420

b 0.51 0.99 0.020 0.039 E1 6.22 - 0.245 -

b1 0.51 0.89 0.020 0.035 e 2.54 BSC 0.100 BSC

b2 1.14 1.78 0.045 0.070 H 14.61 15.88 0.575 0.625

b3 1.14 1.73 0.045 0.068 L 1.78 2.79 0.070 0.110

c 0.38 0.74 0.015 0.029 L1 - 1.65 - 0.066

c1 0.38 0.58 0.015 0.023 L2 - 1.78 - 0.070

c2 1.14 1.65 0.045 0.065 L3 0.25 BSC 0.010 BSC

D 8.38 9.65 0.330 0.380 L4 4.78 5.28 0.188 0.208

ECN: S-82110-Rev. A, 15-Sep-08 DWG: 5970

Notes

1. Dimensioning and tolerancing per ASME Y14.5M-1994.

2. Dimensions are shown in millimeters (inches).

3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body at datum A.

4. Thermal PAD contour optional within dimension E, L1, D1 and E1.

5. Dimension b1 and c1 apply to base metal only.

6. Datum A and B to be determined at datum plane H.

7. Outline conforms to JEDEC outline to TO-263AB.

Document Number: 91364 www.vishay.com Revision: 15-Sep-08 1

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Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product.

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability.

Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.

Material Category Policy

Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant.

Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.

Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards.

Revision: 02-Oct-12

Document Number: 91000

Vishay IRF9Z24S, SiHF9Z24S, IRF9Z24L, SiHF9Z24L Data Sheet

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