Vishay IRF9Z24, SiHF9Z24 Data Sheet

TO-220AB

Available

RoHS*

COMPLIANT

Power MOSFET

IRF9Z24, SiHF9Z24

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) - 60

(Ω)V

DS(on)

(Max.) (nC) 19

(nC) 5.4

(nC) 11

Configuration Single

= - 10 V 0.28

FEATURES

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

• P-Channel

• 175 °C Operating Temperature

•Fast Switching

• Ease of Paralleling

• Simple Drive Requirements

• Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

P-Channel MOSFET

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.

ORDERING INFORMATION

Package TO-220AB

Lead (Pb)-free

SnPb

IRF9Z24PbF SiHF9Z24-E3 IRF9Z24 SiHF9Z24

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V Gate-Source Voltage V

= 25 °C

Continuous Drain Current V

Pulsed Drain Current

at - 10 V

= 100 °C - 7.7

± 20

IDM - 44 Linear Derating Factor 0.40 W/°C Single Pulse Avalanche Energy Repetitive Avalanche Current Repetitive Avalanche Energy Maximum Power Dissipation T Peak Diode Recovery dV/dt Operating Junction and Storage Temperature Range T

= 25 °C P

dV/dt - 4.5 V/ns

, T

stg

Soldering Recommendations (Peak Temperature) for 10 s 300

Mounting Torque 6-32 or M3 screw

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. V

= - 25 V, starting TJ = 25 °C, L = 2.3 mH, Rg = 25 Ω, IAS = - 11 A (see fig. 12).

c. I

≤ - 11 A, dI/dt ≤ 140 A/μs, VDD ≤ VDS, TJ ≤ 175 °C.

d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91090 www.vishay.com S11-0513-Rev. B, 21-Mar-11 1

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

This datasheet is subject to change without notice.

- 60

- 11

240 mJ

- 11 A

6.0 mJ 60 W

- 55 to + 175

10 lbf · in

1.1 N · m

www.vishay.com/doc?91000

°C

IRF9Z24, SiHF9Z24

Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient R

Maximum Junction-to-Case (Drain) R

thJA

thCS

thJC

-62

0.50 -

-2.5

°C/WCase-to-Sink, Flat, Greased Surface R

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

Temperature Coefficient ΔVDS/TJ Reference to 25 °C, ID = - 1 mA - - 0.056 - V/°C

Gate-Source Threshold Voltage V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

Drain-Source On-State Resistance R

Forward Transconductance g

GS(th)

GSS

DSS

VGS = - 10 V ID = - 6.6 A

DS(on)

Dynamic

Input Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Gate-Drain Charge Q

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Internal Drain Inductance L

Internal Source Inductance L

iss

- 360 -

oss

-65-

rss

--5.4

--11

d(on)

-15-

d(off)

-29-

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

Pulsed Diode Forward Current

Body Diode Voltage V

Body Diode Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

Forward Turn-On Time t

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %.

VGS = 0 V, ID = - 250 μA - 60 - - V

VDS = VGS, ID = - 250 μA - 2.0 -

= ± 20 V - - ± 100 nA

VDS = - 60 V, VGS = 0 V - - - 100

= - 48 V, VGS = 0 V, TJ = 150 °C - - - 500

VDS = - 25 V, ID = - 6.6 A

VGS = 0 V,

= - 25 V,

f = 1.0 MHz, see fig. 5

- - 0.28 Ω

1.4 - - S

- 570 -

--19

= - 11 A, VDS = - 48 V,

= - 10 V

see fig. 6 and 13

-13-

= - 30 V, ID = - 11 A,

= 18 Ω, RD = 2.5 Ω, see fig. 10

Between lead, 6 mm (0.25") from package and center of die contact

MOSFET symbol showing the integral reverse p - n junction diode

TJ = 25 °C, IS = - 11 A, VGS = 0 V

TJ = 25 °C, IF = - 11 A, dI/dt = 100 A/μs

-68-

-4.5-

-7.5-

--- 11

--- 44

--- 6.3V

- 100 200 ns

- 0.32 0.64 μC

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

- 4.0

μA

pFOutput Capacitance C

nC Gate-Source Charge Q

www.vishay.com Document Number: 91090 2 S11-0513-Rev. B, 21-Mar-11

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

This datasheet is subject to change without notice.

www.vishay.com/doc?91000

91090_01

20 µs Pulse Width T

= 25 °C

- 4.5 V

- VDS, Drain-to-Source Voltage (V)

- I

, Drain Current (A)

Bottom

To p

- 15 V

- 10 V

- 8.0 V

- 7.0 V

- 6.0 V

- 5.5 V

- 5.0 V

- 4.5 V

-1

- V

Drain-to-Source Voltage (V)

- I

, Drain Current (A)

Bottom

To p

- 15 V

- 10 V

- 8.0 V

- 7.0 V

- 6.0 V

- 5.5 V

- 5.0 V

- 4.5 V

20 µs Pulse Width T

= 175 °C

91090_02

- 4.5 V

= - 11 A

= - 10 V

3.0

0.5

1.0

1.5

2.0

2.5

Junction Temperature (°C)

DS(on)

, Drain-to-Source On Resistance

(Normalized)

91090_04

- 60 - 40- 20 0 20 40 6080100 120140 160

180

0.0

IRF9Z24, SiHF9Z24

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

91090_03

Fig. 1 - Typical Output Characteristics, TC = 25 °C

, Drain Current (A)

- I

Fig. 3 - Typical Transfer Characteristics

Vishay Siliconix

25 °C

5678 910

- V

Gate-to-Source Voltage (V)

175 °C

20 µs Pulse Width V

= - 25 V

Document Number: 91090 www.vishay.com S11-0513-Rev. B, 21-Mar-11 3

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

Fig. 2 - Typical Output Characteristics, T

This datasheet is subject to change without notice.

= 175 °C

Fig. 4 - Normalized On-Resistance vs. Temperature

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