Vishay IRF9Z20, SiHF9Z20 Data Sheet

www.vishay.com

TO-220AB

G

D

S

IRF9Z20, SiHF9Z20

Vishay Siliconix

Power MOSFET

PRODUCT SUMMARY

VDS (V) -50

R

()V

DS(on)

Q

max. (nC) 26

g

Q

(nC) 6.2

gs

Q

(nC) 8.6

gd

Configuration Single

= -10 V 0.28

GS

G

P-Channel MOSFET

FEATURES

• P-channel versatility

• Compact plastic package

•Fast switching

• Low drive current

• Ease of paralleling

• Excellent temperature stability

• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912

S

D

DESCRIPTION

The power MOSFET technology is the key to Vishay’s
advanced line of power MOSFET transistors. The efficient
geometry and unique processing of the power MOSFET
design achieve very low on-state resistance combined with
high transconductance and extreme device ruggedness.

The P-channel power MOSFETs are designed for
application which require the convenience of reverse
polarity operation. They retain all of the features of the more
common N-channel power MOSFETs such as voltage
control, very fast switching, ease of paralleling, and
excellent temperature stability.

P-channel power MOSFETs are intended for use in power
stages where complementary symmetry with N-channel
devices offers circuit simplification. They are also very useful
in drive stages because of the circuit versatility offered by
the reverse polarity connection. Applications include motor
control, audio amplifiers, switched mode converters, control
circuits and pulse amplifiers.

ORDERING INFORMATION

Package TO-220AB

Lead (Pb)-free IRF9Z20PbF

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

Gate-Source Voltage V

T

= 25 °C

Continuous Drain Current V

Pulsed Drain Current

Linear Derating Factor 0.32 W/°C

Inductive Current, Clamped L = 100 μH I

Unclamped Inductive Current (Avalanche current) I

Maximum Power Dissipation T

Operating Junction and Storage Temperature Range T

Soldering Recommendations (Peak temperature)

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 14).

= - 25 V, starting TJ = 25 °C, L =100 μH, Rg = 25 

b. V

DD

c. 0.063" (1.6 mm) from case.

S16-0015-Rev. C, 18-Jan-16

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

a

For technical questions, contact: [e-mail]

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

at - 10 V

GS

c

C

= 100 °C -6.1

C

= 25 °C P

C

for 10 s 300

1

DS

± 20

GS

I

D

IDM -39

LM

L

D

, T

J

stg

-50

-9.7

-39 A

-2.2 A

40 W

-55 to +150

Document Number: 90121

V

AT

°C

IRF9Z20, SiHF9Z20

D

S

G

S

D

G

www.vishay.com

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient R

Maximum Junction-to-Case (Drain) R

thJA

thCS

thJC

-80

1.0 -

-3.1

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

Gate-Source Threshold Voltage V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

Drain-Source On-State Resistance R

Forward Transconductance g

Dynamic

Input Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Gate-Drain Charge Q

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Internal Drain Inductance L

Internal Source Inductance L

DS

GS(th)

V

GSS

DSS

DS(on)

fs

iss

oss

rss

gs

gd

d(on)

r

d(off)

f

D

S

V

DS

VGS = -10 V ID = -5.6 A

- 320 -

-58-

g

V

-4.16.2

-5.78.6

R

g

switching times are essentially independent

-1218

-2538

Between lead,
6 mm (0.25") from
package and center of
die contact

VGS = 0 V, ID = -250 μA -50 - - V

VDS = VGS, ID = -250 μA -2.0 - -4.0 V

= ± 20 V - - ± 500 nA

GS

VDS = max. rating, VGS = 0 V - - -250

= max. rating x 0,8, VGS = 0 V, TJ =125°C - - -1000

b

VDS = 2 x VGS, IDS = -5.6 A

b

VGS = 0 V,

V

= -25 V,

DS

f = 1.0 MHz, see fig. 9

= -9.7 A, VDS = -0.8 max.

I

= -10 V

GS

= 18 , RD = 2.4, see fig. 16 (MOSFET

D

rating. see fig. 17

V

= -25 V, ID = -9.7 A,

DD

of operating temperature)

Vishay Siliconix

°C/WCase-to-Sink, Flat, Greased Surface R

μA

- 0.20 0.28 

2.3 3.5 - S

- 480 -

pFOutput Capacitance C

-1726

nC Gate-Source Charge Q

-8.212

-5786

-4.5-

-7.5-

ns

nH

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

Pulsed Diode Forward Current

a

Body Diode Voltage V

Body Diode Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

Forward Turn-On Time t

S

I

SM

SD

rr

rr

on

MOSFET symbol
showing the 
integral reverse
p - n junction diode

TJ = 25 °C, IS = - 9.7 A, VGS = 0 V

b

TJ = 25 °C, IF = - 9.7 A, dI/dt = 100 A/μs

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

---9.7

---39

---6.3V

56 110 280 ns

b

0.17 0.34 0.85 μC

A

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 14).
b. Pulse width  300 μs; duty cycle  2 %.

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

For technical questions, contact: [e-mail]

S16-0015-Rev. C, 18-Jan-16

2

Document Number: 90121

www.vishay.com

Negative I

D

, Drain Current (A)

Negative V

DS

,

Drain-to-Source Voltage (V)

5

90121_03

80 µs Pulse Test

- 4 V

V

GS

= - 10

- 6 V

- 5 V

- 7 V

- 8 V

15

12

0

3

6

9

1

0

4

32

5.0

4.0

3.0

2.0

0.0

1.0

0

4

20

1612

8

90121_06

TJ = 25 °C

TJ = 150 °C

80 µs Pulse Test
V

DS

< - 50 V

g

fs

,Transconductance (S)

Negative I

D

,

Drain Current (A)

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

IRF9Z20, SiHF9Z20

Vishay Siliconix

15

V

= - 10, - 8 V

GS

12

9

, Drain Current (A)

6

D

3

Negative I

0

0

90121_01

5

Negative VDS, Drain-to-Source Voltage (V)

Fig. 1 - Typical Output Characteristics

2

10

80 µs Pulse Test

5

= 2 x V

V

DS

2

GS

10

5

2

, Drain Current (A)

D

1

5

Negative I

90121_02

0.1

2

0

TJ = 150 °C

246

Negative V

Gate-to-Source Voltage (V)

,

GS

TJ = 25 °C

Fig. 2 - Typical Transfer Characteristics

80 µs Pulse Test

1510

3

- 7 V

- 6 V

- 5 V

- 4 V

10

5

2

2

10

5

2

10

5

, Drain Current (A)

D

2

1

5

Negative I

2

2520

0.1
110

90121_04

Operation in this area limited

by R

DS(on)

IRF9Z20, SiHF9Z20
IRF9Z22, SiHF9Z22

10 µs

100 µs

IRF9Z20, SiHF9Z20
IRF9Z22, SiHF9Z22

25

TC = 25 °C

= 150 °C

T

J

Single Pulse

25

1 ms

10 ms

DC

Negative VDS, Drain-to-Source Voltage (V)

2

10

Fig. 4 - Maximum Safe Operating Area

8

10

Fig. 5 - Typical Transconductance vs. Drain Current

S16-0015-Rev. C, 18-Jan-16

2

10

5

2

10

TJ = 150 °C

5

2

1

, Reverse Drain Current (A)

Fig. 3 - Typical Saturation Characteristics

DR

5

2

0.1

Negative I

90121_07

08642

Negative VSD, Source-to-Drain Voltage (V)

Fig. 6 - Typical Source-Drain Diode Forward Voltage

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

For technical questions, contact: [e-mail]

3

TJ = 25 °C

Document Number: 90121

10

www.vishay.com

90121_08

TJ, Junction Temperature (°C)

BV

DSS

, Drain-to-Source Breakdown

1.25

Voltage (Normalized)

1.15

0.75

0.85

0.95

1.05

- 60 - 40 - 20 0 20 40 60 80 100

120

140 160

ID = 1 mA

1000

800

600

400

0

200

110

C, Capacitance (pF)

Negative V

DS

,

Drain-to-Source Voltage (V)

C

iss

C

rss

C

oss

90121_10

V

GS

= 0 V, f = 1 MHz

C

iss

= Cgs + Cgd, Cds Shorted

C

rss

= C

gd

C

oss

= Cds + C

gs Cgd

/ (C

gs

+ Cgd)

≈ C

ds

+ C

gd

10

2

5252

QG, Total Gate Charge (nC)

Negative V

GS

, Gate-to-Source Voltage (V)

20

16

12

8

0

4

0

8

40

3224

16

V

SD

= - 40 V

For test circuit
see figure 17

90121_11

ID = - 9.7 A

90121_12

Negative ID, Drain Current (A)

R

DS(on)

, Drain-to-Source On Resistance

0.0

0.4

0.8

1.2

1.6

2.0

403216824

V

GS

= - 10 V

V

GS

= - 20 V

80 µs Pulse Test

0

150

Negative I

D

, Drain Current (A)

TC, Case Temperature (°C)

2

4

6

8

10

25

90121_13

1251007550

0

IRF9Z20, SiHF9Z20

IRF9Z22, SiHF9Z22

IRF9Z20, SiHF9Z20

Vishay Siliconix

Fig. 7 - Breakdown Voltage vs. Temperature

3.0

I

= - 9.7 A

D

= - 10 V

V

GS

2.4

1.8

1.2

(Normalized)

0.6

, Drain-to-Source On Resistance

DS(on)

0.0

R

- 60 - 40 - 20 0 20 40 60 80 100 120 140 160

90121_09

TJ, Junction Temperature (°C)

Fig. 8 - Normalized On-Resistance vs. Temperature

Fig. 10 - Typical Gate Charge vs. Gate-to-Source Voltage

Fig. 11 - Typical On-Resistance vs. Drain Current

Fig. 9 - Typical Capacitance vs. Drain-to-Source Voltage

S16-0015-Rev. C, 18-Jan-16

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Fig. 12 - Maximum Drain Current vs. Case Temperature

4

For technical questions, contact: [e-mail]

Document Number: 90121

IRF9Z20, SiHF9Z20

10

1

0.1

10

-2

10

-5

10

-4

10

-3

10

-2

0.1 1 10

P

DM

t

1

t

2

t1, Rectangular Pulse Duration (s)

Thermal Response (Z

thJC

)

Notes:

1. Duty Factor, D = t

1/t2

2. Peak Tj = PDM x Z

thJC

+ T

C

Single Pulse
(Thermal Response)

D = 0.5

0.2

0.05

0.02

0.01

90121_05

0.1

www.vishay.com

Fig. 13a - Unclamped Inductive Test Circuit Fig. 13b - Unclamped Inductive Load Test Waveforms

Vishay Siliconix

Fig. 14 - Maximum Effective Transient Thermal Impedance, Junction-to-Case vs. Pulse Duration

Fig. 15 - Switching Time Test Circuit Fig. 16 - Gate Charge Test Circuit

S16-0015-Rev. C, 18-Jan-16

For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

5

Document Number: 90121

www.vishay.com

90121_18

14 V

Time (H)

50

10

12

10

10

10

8

10

6

10

4

10

2

20 V

18 V

16 V

70 90

110

130

150

Temperature (°C)

IRF9Z20, SiHF9Z20

Vishay Siliconix

4

10

3

10

60 % UCL

1

0.1

90 % UCL

2

10

99 % UCL

-2

10

20 FIT’s

10

-3

10

Random Failure Rate (FIT)

150

-4

10

90121_19

1

50

70 90

110

130

Temperature (°C)

Fig. 17 - Typical Time to Accumulated 1 % Gate Failure Fig. 18 - Typical High Temperature Reverse Bias (HTRB)

Failure Rate

% Per 1000 Hours

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?90121

S16-0015-Rev. C, 18-Jan-16

.

6

Document Number: 90121

For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Legal Disclaimer Notice

www.vishay.com

Vishay

Disclaimer



ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.

Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.

Revision: 13-Jun-16

1

Document Number: 91000