Vishay IRF9620, SiHF9620 Data Sheet

S

G

D

P-Channel MOSFET

TO-220AB

G

D

S

Power MOSFET

IRF9620, SiHF9620

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) - 200

R

()V

DS(on)

Q

(Max.) (nC) 22

g

Q

(nC) 12

gs

Q

(nC) 10

gd

Configuration Single

= - 10 V 1.5

GS

FEATURES

• Dynamic dV/dt Rating

• P-Channel

•Fast Switching

• Ease of Paralleling

• Simple Drive Requirements

• Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.

ORDERING INFORMATION

Package TO-220AB

Lead (Pb)-free

SnPb

IRF9620PbF
SiHF9620-E3
IRF9620
SiHF9620

Available

RoHS*

COMPLIANT

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

Gate-Source Voltage V

= 25 °C

T

Continuous Drain Current V

Pulsed Drain Current

Linear Derating Factor 0.32 W/°C

Maximum Power Dissipation T

Peak Diode Recovery dV/dt

Operating Junction and Storage Temperature Range T

Soldering Recommendations (Peak Temperature) for 10 s 300

Mounting Torque 6-32 or M3 screw

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. I

 - 3.5 A, dI/dt  95 A/μs, VDD  VDS, TJ  150 °C.

SD

c. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91082 www.vishay.com
S11-0512-Rev. B, 21-Mar-11 1

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

a

b

This datasheet is subject to change without notice.

at - 10 V

GS

C

= 100 °C - 2.0

C

= 25 °C P

C

DS

± 20

GS

I

D

IDM - 14

D

dV/dt - 5.0 V/ns

, T

J

stg

- 200

- 3.5

40 W

- 55 to + 150

c

10 lbf · in

1.1 N · m

www.vishay.com/doc?91000

V

AT

°C

IRF9620, SiHF9620

Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient R

Maximum Junction-to-Case (Drain) R

thJA

thCS

thJC

-62

0.50 -

-3.1

°C/WCase-to-Sink, Flat, Greased Surface R

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

Temperature Coefficient VDS/TJ Reference to 25 °C, ID = - 1 mA - - 0.22 -

V

DS

Gate-Source Threshold Voltage V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

Drain-Source On-State Resistance R

Forward Transconductance g

DS

GS(th)

V

GSS

DSS

VGS = - 10 V ID = - 1.5 A

DS(on)

fs

Dynamic

Input Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Gate-Drain Charge Q

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Internal Drain Inductance L

Internal Source Inductance L

iss

- 100 -

oss

-30-

rss

g

--12

gs

--10

gd

d(on)

r

-20-

d(off)

-15-

f

D

S

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

Pulsed Diode Forward Current

a

Body Diode Voltage V

Body Diode Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

Forward Turn-On Time t

S

I

SM

SD

rr

rr

on

TJ = 25 °C, IF = - 3.5 A, dI/dt = 100 A/μs

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.

VGS = 0 V, ID = - 250 μA - 200 - -

VDS = VGS, ID = - 250 μA - 2.0 - - 4.0 V

= ± 20 V - - ± 100 nA

GS

VDS = - 200 V, VGS = 0 V - - - 100

V

= - 160 V, VGS = 0 V, TJ = 125 °C - - - 500

DS

VDS = - 50 V, ID = - 1.5 A

VGS = 0 V,

V

= - 25 V,

DS

f = 1.0 MHz, see fig. 5

b

b

--1.5

1.0 - - S

- 350 -

--22

= - 4.0 A, VDS = - 160 V,

I

V

GS

= - 10 V

D

see fig. 11 and 18

b

-15-

V

= - 100 V, ID = - 1.5 A,

DD

R

= 50 , RD = 67, see fig. 17

g

Between lead,
6 mm (0.25") from
package and center of
die contact

MOSFET symbol
showing the
integral reverse
p - n junction diode

TJ = 25 °C, IS = - 3.5 A, VGS = 0 V

b

D

G

S

D

G

S

b

-25-

-4.5-

-7.5-

--- 3.5

--- 14

--- 7.0

- 300 450 ns

b

-1.92.9μC

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

V

V/°C

μA



pFOutput Capacitance C

nC Gate-Source Charge Q

ns

nH

A

V

www.vishay.com Document Number: 91082
2 S11-0512-Rev. B, 21-Mar-11

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

91082_01

80 µs Pulse Test

VDS, Drain-to-Source Voltage (V)

I

D

, Drain Current (A)

- 10

- 5

V

GS

= - 10, - 9, - 8, - 7 V

- 4 V

- 6 V

- 5 V

- 4

0

- 1

- 2

- 3

0

- 50- 40

- 30- 20

91082_02

VGS, Gate-to-Source Voltage (V)

I

D

, Drain Current (A)

- 2

- 5

- 4

0

- 1

- 2

- 3

0

- 10- 8

- 6- 4

80 µs Pulse Test
V

DS

> I

D(on)

x R

DS(on)

max.

T

J

= - 55 °C

T

J

= 25 °C

T

J

= 125 °C

91082_03

VDS, Drain-to-Source Voltage (V)

I

D

, Drain Current (A)

- 1

- 5

- 4

0

- 1

- 2

- 3

0

- 5- 4

- 3- 2

80 µs Pulse Test

V

GS

= - 10, - 9, - 8, - 7 V

- 4 V

- 6 V

- 5 V

100 µs

1 ms

10 ms

Operation in this area limited

by R

DS(on)

Negative VDS, Drain-to-Source Voltage (V)

Negative I

D

, Drain Current (A)

TC = 25 °C
T

J

= 150 °C

Single Pulse

10

2

2

5

0.1

1

2

5

10

2

5

25

110

25

10

2

10

3

25

91082_04

2.0

1.0

0.1

10

-5

10

-4

10

-3

10

-2

0.1 1.0 10

P

DM

t

1

t

2

t

, Square Wave Pulse Duration (s)

Z

thJC

(t)/R

thJC

, Normalized Effective Transien

Notes:

1. Duty Factor, D = t

1/t2

2. Per Unit Base = R

thJC

= 3.12 °C/W

3. T

JM

- TC = PDM Z

thJC

(t)

Single Pulse (Transient
Thermal Impedence)

0.2

0.05

0.02

0.01

91082_05

0.1

D = 0.5

0.5

0.2

0.05

0.02

0.01

25 25 25 25 25 25

Thermal Impedence (Per Unit)

IRF9620, SiHF9620

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Fig. 1 - Typical Output Characteristics

Vishay Siliconix

Fig. 3 - Typical Saturation Characteristics

Fig. 2 - Typical Transfer Characteristics

Document Number: 91082 www.vishay.com
S11-0512-Rev. B, 21-Mar-11 3

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

Fig. 5 - Maximum Effective Transient Thermal Impedance, Junction-to-Case vs. Pulse Duration

This datasheet is subject to change without notice.

Fig. 4 - Maximum Safe Operating Area

www.vishay.com/doc?91000

IRF9620, SiHF9620

4.0

g

fs

,Transconductance (S)

I

D

,

Drain Current (A)

- 1 - 2 - 3 - 4 - 5

0

TJ = 25 °C

TJ = - 55 °C

91082_06

TJ = 125 °C

80 µs Pulse Test
V

DS

> I

D(on)

x R

DS(on)

max.

3.2

2.4

1.6

0.8

0.0

TJ = 25 °C

TJ = 150 °C

- 20

VSD, Source-to-Drain Voltage (V)

I

DR

, Reverse Drain Current (A)

- 2.0

- 6.8

- 5.6- 4.4- 3.2

91082_07

- 0.1

- 0.2

- 1.0

- 2

- 5

- 10

- 8.0

- 0.5

QG, Total Gate Charge (nC)

Negative V

GS

, Gate-to-Source Voltage (V)

20

16

12

8

0

4

04 16128

V

DS

= - 40 V

V

DS

= - 60 V

For test circuit
see figure 18

V

DS

= - 100 V

91082_11

ID = - 3.5 A

20

Vishay Siliconix

Fig. 6 - Typical Transconductance vs. Drain Current

2.5

I

= - 1.0 A

D

= - 10 V

V

GS

2.0

1.5

1.0

(Normalized)

0.5

, Drain-to-Source On Resistance

DS(on)

0.0

R

- 40

91082_09

TJ, Junction Temperature (°C)

Fig. 9 - Normalized On-Resistance vs. Temperature

500

12080400

160

www.vishay.com Document Number: 91082
4 S11-0512-Rev. B, 21-Mar-11

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

Fig. 7 - Typical Source-Drain Diode Forward Voltage

1.25

1.15

1.05

0.95

Voltage (Normalized)

0.85

0.75

- 40

TJ, Junction Temperature (°C)

80400

120

, Drain-to-Source Breakdown

DSS

BV

91082_08

Fig. 8 - Breakdown Voltage vs. Temperature

This datasheet is subject to change without notice.

160

C

400

300

200

C, Capacitance (pF)

100

iss

V

= 0 V, f = 1 MHz

GS

= Cgs + Cgd, Cds Shorted

C

C

oss

C

rss

iss

C

rss

C

oss

= C

gd

= Cds +

≈ Cgs + C

, C

C

gs

Cgs + C

gd

gd

gd

0

- 10

0 - 50- 40- 30- 20

91082_10

VDS, Drain-to-Source Voltage (V)

Fig. 10 - Typical Capacitance vs. Drain-to-Source Voltage

Fig. 11 - Typical Gate Charge vs. Gate-to-Source Voltage

www.vishay.com/doc?91000

91082_12

ID, Drain Current (A)

R

DS(on)

, Drain-to-Source

R

DS(on)

measured with current
pulse of 2.0 µs duration. Initial
T

J

= 25 °C. (Heating effect of

2.0 µs pulse is minimal.)

0

1

2

3

4

5

0 - 20- 16- 8- 4 - 12

On Resistance (Ω)

V

GS

= - 10 V

V

GS

= - 20 V

150

Negative I

D

, Drain Current (A)

TC, Case Temperature (°C)

0.0

1.5

2.0

2.5

3.0

3.5

25

91082_13

1251007550

1.0

0.5

TC, Case Temperature (°C)

P

D

, Power Dissipation (W)

40

35

20

0

5

0 20 100806040

91082_14

140

120

30

25

15

10

V

DD

V

DS

t

p

E

C

I

L

IRF9620, SiHF9620

Fig. 12 - Typical On-Resistance vs. Drain Current

VGS = - 10 V

Vishay Siliconix

Var y tp to obtain
required I

L

t

p

D.U.T.

I

L

VDD = 0.5 V

Fig. 15 - Clamped Inductive Test Circuit

Fig. 16 - Clamped Inductive Waveforms

DS

V

DS

EC = 0.75 V

L

V

DD

E

C

0.05 Ω

-

+

DS

R

D.U.T.

D

-

+

V

DD

V

DS

V

GS

R

G

- 10 V

Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %

Fig. 13 - Maximum Drain Current vs. Case Temperature

Fig. 17a - Switching Time Test Circuit

t

t

d(on)

V

GS

r

t

d(off)

t

f

10 %

Fig. 14 - Power vs. Temperature Derating Curve

90 %

V

DS

Fig. 17b - Switching Time Waveforms

Document Number: 91082 www.vishay.com
S11-0512-Rev. B, 21-Mar-11 5

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

This datasheet is subject to change without notice.

www.vishay.com/doc?91000

IRF9620, SiHF9620

Q

GS

Q

GD

Q

G

V

G

Charge

- 15 V

Vishay Siliconix

Fig. 18a - Basic Gate Charge Waveform Fig. 18b - Gate Charge Test Circuit

+

D.U.T.

Current regulator

Same type as D.U.T.

12 V

V

GS

Peak Diode Recovery dV/dt Test Circuit

+

Circuit layout considerations

• Low stray inductance

• Ground plane

• Low leakage inductance

-

current transformer

50 kΩ

0.2 µF

0.3 µF

- 3 mA

I

G

Current sampling resistors

D.U.T.

I

D

-

V

+

DS

+

dI/dt

D =

-

I

V

V

SD

GS

DD

+

V

-

= - 10 V

DD

a

g

P.W.

Period

-

R

g

Note

• Compliment N-Channel of D.U.T. for driver

Driver gate drive

P.W.

D.U.T. lSD waveform

Reverse
recovery
current

Re-applied
voltage

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon

waveform

D.U.T. V

DS

Inductor current

Note

a. V

= - 5 V for logic level and - 3 V drive devices

GS

• dV/dt controlled by R

• I

controlled by duty factor “D”

SD

• D.U.T. - device under test

Period

Body diode forward

current

Diode recovery

dV/dt

Body diode forward drop

Ripple ≤ 5 %

Fig. 19 - For P-Channel

Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91082

www.vishay.com Document Number: 91082
6 S11-0512-Rev. B, 21-Mar-11

.

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

www.vishay.com

M

*

3

2

1

L

L(1)

D

H(1)

Q

Ø P

A

F

J(1)

b(1)

e(1)

e

E

b

C

Package Information

Vishay Siliconix

TO-220-1

DIM.

A 4.24 4.65 0.167 0.183

b 0.69 1.02 0.027 0.040

b(1) 1.14 1.78 0.045 0.070

c 0.36 0.61 0.014 0.024

D 14.33 15.85 0.564 0.624

E 9.96 10.52 0.392 0.414

e 2.41 2.67 0.095 0.105

e(1) 4.88 5.28 0.192 0.208

F 1.14 1.40 0.045 0.055

H(1) 6.10 6.71 0.240 0.264

J(1) 2.41 2.92 0.095 0.115

L 13.36 14.40 0.526 0.567

L(1) 3.33 4.04 0.131 0.159

Ø P 3.53 3.94 0.139 0.155

Q 2.54 3.00 0.100 0.118

ECN: X15-0364-Rev. C, 14-Dec-15
DWG: 6031

Note

• M* = 0.052 inches to 0.064 inches (dimension including
protrusion), heatsink hole for HVM

MILLIMETERS INCHES

MIN. MAX. MIN. MAX.

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Revison: 14-Dec-15

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ASE Xi’an

For technical questions, contact: [e-mail]

Package Picture

1

Document Number: 66542

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

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Revision: 13-Jun-16

1

Document Number: 91000