VISHAY IRF 9540 VIS Datasheet

Power MOSFET

IRF9540, SiHF9540

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) - 100

(Ω)V

R

DS(on)

Q

(Max.) (nC) 61

g

Q

(nC) 14

gs

Q

(nC) 29

gd

Configuration Single

= - 10 V 0.20

GS

S

FEATURES

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

• P-Channel

• 175 °C Operating Temperature

• Fast Switching

• Ease of Paralleling

• Simple Drive Requirements

• Lead (Pb)-free Available

TO-220

DESCRIPTION

G

S

D

G

D

P-Channel MOSFET

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

ORDERING INFORMATION

Package TO-220

Lead (Pb)-free

SnPb

IRF9540PbF SiHF9540-E3 IRF9540 SiHF9540

Available

RoHS*

COMPLIANT

ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V Gate-Source Voltage V

T

= 25 °C

Continuous Drain Current V

Pulsed Drain Current

a

at - 10 V

GS

C

= 100 °C - 13

T

C

DS

± 20

GS

I

D

IDM - 72 Linear Derating Factor 1.0 W/°C Single Pulse Avalanche Energy Repetitive Avalanche Current Repetitive Avalanche Energy Maximum Power Dissipation T Peak Diode Recovery dV/dt

b

a

= 25 °C P

c

C

Operating Junction and Storage Temperature Range T

E

AS

I

AR

E

AR

D

dV/dt - 5.5 V/ns

, T

J

stg

Soldering Recommendations (Peak Temperature) for 10 s 300

Mounting Torque 6-32 or M3 screw

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. V

= - 25 V, starting TJ = 25 °C, L = 2.7 mH, RG = 25 Ω, IAS = - 19 A (see fig. 12).

DD

c. I

≤ - 19 A, dI/dt ≤ 200 A/µs, VDD ≤ VDS, TJ ≤ 175 °C.

SD

d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91078 www.vishay.com S09-0017-Rev. A, 19-Jan-09 1

- 100

- 19

640 mJ

- 19 A 15 mJ

150 W

- 55 to + 175

d

10 lbf · in

1.1 N · m

V

A

°C

IRF9540, SiHF9540

Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient R

Maximum Junction-to-Case (Drain) R

thJA

thCS

thJC

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

Temperature Coefficient ΔVDS/TJ Reference to 25 °C, ID = - 1 mA - - 0.087 -

V

DS

Gate-Source Threshold Voltage V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

Drain-Source On-State Resistance R

Forward Transconductance g

Dynamic

Input Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Gate-Drain Charge Q

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Internal Drain Inductance L

Internal Source Inductance L

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

Pulsed Diode Forward Current

a

Body Diode Voltage V

Body Diode Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

Forward Turn-On Time t

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.

DS

GS(th)

V

GSS

DSS

VGS = - 10 V ID = - 11 A

DS(on)

fs

iss

- 590 -

oss

- 140 -

rss

g

--14

gs

--29

gd

d(on)

r

-34-

d(off)

-57-

f

D

V

GS

R

Between lead, 6 mm (0.25") from package and center of

S

I

SM

SD

rr

on

die contact

MOSFET symbol showing the

integral reverse p - n junction diode

TJ = 25 °C, IS = - 19 A, VGS = 0 V

TJ = 25 °C, IF = - 19 A, dI/dt = 100 A/µs

-62

0.50 -

°C/WCase-to-Sink, Flat, Greased Surface R

-1.0

VGS = 0 V, ID = - 250 µA - 100 - -

VDS = VGS, ID = - 250 µA - 2.0 -

= ± 20 V - - ± 100

GS

- 4.0 V

VDS = - 100 V, VGS = 0 V - - - 100

= - 80 V, VGS = 0 V, TJ = 150 °C - - - 500

DS

VDS = - 50 V, ID = - 11 A

VGS = 0 V,

V

= - 25 V,

DS

f = 1.0 MHz, see fig. 5

b

- - 0.20

6.2 - -

- 1400 -

--61

= - 19 A, VDS = - 80 V,

I

= - 10 V

D

see fig. 6 and 13

b

-16-

V

= - 50 V, ID = - 19 A,

DD

= 9.1 Ω, RD = 2.4 Ω, see fig. 10

G

b

D

S

D

S

b

-73-

-4.5-

-7.5-

--- 19

--- 72

--- 5.0

- 130 260

b

- 0.35 0.70

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

V

V/°C

nA

µA

Ω

S

pFOutput Capacitance C

nC Gate-Source Charge Q

ns

nH

A

V

ns

µC

www.vishay.com Document Number: 91078 2 S09-0017-Rev. A, 19-Jan-09

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

2

10

1

10

, Drain Current (A)

D

- I

10

91078_01

Fig. 1 - Typical Output Characteristics, TC = 25 °C

V

To p

Bottom

GS

- 15 V

- 10 V

- 8.0 V

- 7.0 V

- 6.0 V

- 5.5 V

- 5.0 V

- 4.5 V

0

1

10

- VDS, Drain-to-Source Voltage (V)

- 4.5 V

20 µs Pulse Width

= 25 °C

T

C

91078_03

10

, Drain Current (A)

D

- I

IRF9540, SiHF9540

Vishay Siliconix

25 °C

175 °C

1

20 µs Pulse Width

= - 50 V

V

DS

4

5678

- V

Gate-to-Source Voltage (V)

,

GS

Fig. 3 - Typical Transfer Characteristics

10

9

V

GS

- 15 V

- 10 V

- 8.0 V

- 7.0 V

- 6.0 V

- 5.5 V

- 5.0 V

- 4.5 V

10

- V

Drain-to-Source Voltage (V)

,

DS

, Drain Current (A)

D

- I

91078_02

To p

Bottom

1

10

0

10

Fig. 2 - Typical Output Characteristics, T

- 4.5 V

20 µs Pulse Width T

= 175 °C

C

1

= 175 ° C

C

3.0 I

= - 19 A

D

V

= - 10 V

GS

2.5

2.0

1.5

(Normalized)

1.0

, Drain-to-Source On Resistance

0.5

DS(on)

0.0

R

- 60- 40 - 20 0 20 40 6080100 120140 160

T

Junction Temperature (°C)

91078_04

,

J

Fig. 4 - Normalized On-Resistance vs. Temperature

180

Document Number: 91078 www.vishay.com S09-0017-Rev. A, 19-Jan-09 3

IRF9540, SiHF9540

Vishay Siliconix

3000

2500

V

= 0 V, f = 1 MHz

GS

= Cgs + Cgd, Cds Shorted

C

iss

= C

C

rss

gd

C

= Cds + C

oss

gd

2000

C

1500

1000

Capacitance (pF)

500

0

10

91078_05

10

- V

Drain-to-Source Voltage (V)

,

DS

1

iss

C

oss

C

rss

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

20

ID = - 19 A

V

= - 80 V

16

12

V

DS

V

= - 20 V

= - 50 V

DS

8

, Gate-to-Source Voltage (V)

4

GS

- V

91078_06

0

10

3020

QG, Total Gate Charge (nC)

For test circuit see figure 13

40

600

50

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

1

, Reverse Drain Current (A)

SD

- I

91078_07

10

0

10

0.0

175 °C

1.0

25 °C

V

GS

4.03.02.0

- VSD, Source-to-Drain Voltage (V)

Fig. 7 - Typical Source-Drain Diode Forward Voltage

3

, Drain Current (A)

D

- I

91078_08

10

5

2

5

2

10

5

2

1

5

2

0.1

Operation in this area limited

by R

DS(on)

TC = 25 °C

= 175 °C

T

J

Single Pulse

25

1

25

10

25

10

- VDS, Drain-to-Source Voltage (V)

100 µs

1 ms

10 ms

2

Fig. 8 - Maximum Safe Operating Area

= 0 V

5

5.0

10

3

www.vishay.com Document Number: 91078 4 S09-0017-Rev. A, 19-Jan-09

IRF9540, SiHF9540

Vishay Siliconix

R

D.U.T.

D

-

+

V

DD

V

DS

V

GS

R

G

20

- 10 V

16

Pulse width ≤ 1 µs Duty factor ≤ 0.1 %

12

8

, Drain Current (A)

D

- I

4

0

150

1251007550

91078_09

25

TC, Case Temperature (°C)

Fig. 9 - Maximum Drain Current vs. Case Temperature

10

)

thJC

1

D = 0.5

0.2

0.1

0.05

Thermal Response (Z

91078_11

0.02

0.01

-2

10

-5

10

-4

10

Single Pulse (Thermal Response)

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

175

-3

10

-2

10

t1, Rectangular Pulse Duration (s)

Fig. 10a - Switching Time Test Circuit

V

GS

10 %

90 %

V

t

d(on)

r

DS

t

d(off)

t

f

Fig. 10b - Switching Time Waveforms

P

DM

t

1

t

1/t2

thJC

2

+ T

C

Notes:

1. Duty Factor, D = t

2. Peak Tj = PDM x Z

0.1 1 10

Vary tp to obtain required I

AS

R

G

- 10 V

V

L

DS

D.U.T

I

AS

t

p

0.01 Ω

-

V

+

DD

I

AS

V

DS

V

t

p

V

DD

DS

Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms

Document Number: 91078 www.vishay.com S09-0017-Rev. A, 19-Jan-09 5

IRF9540, SiHF9540

Vishay Siliconix

2000

1600

1200

800

, Single Pulse Energy (mJ)

400

AS

E

0

91078_12c

Fig. 12c - Maximum Avalanche Energy vs. Drain Current

Q

- 10 V

Q

GS

V

G

Q

GD

Charge

Fig. 13a - Basic Gate Charge Waveform

To p

Bottom

VDD = - 25 V

25 150

50

125

10075

Starting TJ, Junction Temperature (°C)

12 V

I

D

- 7.8 A

- 13 A

- 19 A

175

Current regulator

Same type as D.U.T.

50 kΩ

0.2 µF

V

GS

0.3 µF

D.U.T.

- 3 mA

I

G

Current sampling resistors

I

D

-

+

Fig. 13b - Gate Charge Test Circuit

V

DS

www.vishay.com Document Number: 91078 6 S09-0017-Rev. A, 19-Jan-09

IRF9540, SiHF9540

Peak Diode Recovery dV/dt Test Circuit

Vishay Siliconix

D.U.T.

+

Circuit layout considerations

• Low stray inductance

• Ground plane

• Low leakage inductance

-

current transformer

+

-

R

G

• dV/dt controlled by R

• ISD controlled by duty factor "D"

• D.U.T. - device under test

Compliment N-Channel of D.U.T. for driver

Driver gate drive

P.W.

Period

-

D =

G

P.W.

Period

+

V

DD

-

= - 10 V*

V

GS

waveform

SD

Body diode forward

current

waveform

DS

Ripple ≤ 5 %

= - 5 V for logic level and - 3 V drive devices

GS

Diode recovery

Body diode forward drop

dI/dt

dV/dt

V

DD

I

SD

Reverse recovery current

Re-applied voltage

D.U.T. I

D.U.T. V

Inductor current

* V

Fig. 14 - For P-Channel

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91078

.

Document Number: 91078 www.vishay.com S09-0017-Rev. A, 19-Jan-09 7

Legal Disclaimer Notice

Vishay

Disclaimer

All product specifications and data are subject to change without notice.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product.

Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.

Product names and markings noted herein may be trademarks of their respective owners.

Document Number: 91000 www.vishay.com Revision: 18-Jul-08 1