VISHAY IRF 9540 VIS Datasheet

Power MOSFET

IRF9540, SiHF9540

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) - 100

(Ω)V

R

DS(on)

Q

(Max.) (nC) 61

g

Q

(nC) 14

gs

Q

(nC) 29

gd

Configuration Single

= - 10 V 0.20

GS

S

FEATURES

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

• P-Channel

• 175 °C Operating Temperature

• Fast Switching

• Ease of Paralleling

• Simple Drive Requirements

• Lead (Pb)-free Available

TO-220

DESCRIPTION

G

S

D

G

D

P-Channel MOSFET

Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.

ORDERING INFORMATION

Package TO-220

Lead (Pb)-free

SnPb

IRF9540PbF
SiHF9540-E3
IRF9540
SiHF9540

Available

RoHS*

COMPLIANT

ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V
Gate-Source Voltage V

T

= 25 °C

Continuous Drain Current V

Pulsed Drain Current

a

at - 10 V

GS

C

= 100 °C - 13

T

C

DS

± 20

GS

I

D

IDM - 72
Linear Derating Factor 1.0 W/°C
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation T
Peak Diode Recovery dV/dt

b

a

a

= 25 °C P

c

C

Operating Junction and Storage Temperature Range T

E

AS

I

AR

E

AR

D

dV/dt - 5.5 V/ns

, T

J

stg

Soldering Recommendations (Peak Temperature) for 10 s 300

Mounting Torque 6-32 or M3 screw

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V

= - 25 V, starting TJ = 25 °C, L = 2.7 mH, RG = 25 Ω, IAS = - 19 A (see fig. 12).

DD

c. I

≤ - 19 A, dI/dt ≤ 200 A/µs, VDD ≤ VDS, TJ ≤ 175 °C.

SD

d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91078 www.vishay.com
S09-0017-Rev. A, 19-Jan-09 1

- 100

- 19

640 mJ

- 19 A
15 mJ

150 W

- 55 to + 175

d

10 lbf · in

1.1 N · m

V

A

°C

IRF9540, SiHF9540

Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient R

Maximum Junction-to-Case (Drain) R

thJA

thCS

thJC

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

Temperature Coefficient ΔVDS/TJ Reference to 25 °C, ID = - 1 mA - - 0.087 -

V

DS

Gate-Source Threshold Voltage V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

Drain-Source On-State Resistance R

Forward Transconductance g

Dynamic

Input Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Gate-Drain Charge Q

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Internal Drain Inductance L

Internal Source Inductance L

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

Pulsed Diode Forward Current

a

Body Diode Voltage V

Body Diode Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

Forward Turn-On Time t

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.

DS

GS(th)

V

GSS

DSS

VGS = - 10 V ID = - 11 A

DS(on)

fs

iss

- 590 -

oss

- 140 -

rss

g

--14

gs

--29

gd

d(on)

r

-34-

d(off)

-57-

f

D

V

V

GS

R

Between lead,
6 mm (0.25") from
package and center of

S

S

I

SM

SD

rr

rr

on

die contact

MOSFET symbol
showing the

integral reverse
p - n junction diode

TJ = 25 °C, IS = - 19 A, VGS = 0 V

TJ = 25 °C, IF = - 19 A, dI/dt = 100 A/µs

-62

0.50 -

°C/WCase-to-Sink, Flat, Greased Surface R

-1.0

VGS = 0 V, ID = - 250 µA - 100 - -

VDS = VGS, ID = - 250 µA - 2.0 -

= ± 20 V - - ± 100

GS

- 4.0 V

VDS = - 100 V, VGS = 0 V - - - 100

= - 80 V, VGS = 0 V, TJ = 150 °C - - - 500

DS

VDS = - 50 V, ID = - 11 A

VGS = 0 V,

V

= - 25 V,

DS

f = 1.0 MHz, see fig. 5

b

b

- - 0.20

6.2 - -

- 1400 -

--61

= - 19 A, VDS = - 80 V,

I

= - 10 V

D

see fig. 6 and 13

b

-16-

V

= - 50 V, ID = - 19 A,

DD

= 9.1 Ω, RD = 2.4 Ω, see fig. 10

G

G

G

b

D

S

D

S

b

-73-

-4.5-

-7.5-

--- 19

--- 72

--- 5.0

- 130 260

b

- 0.35 0.70

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

V

V/°C

nA

µA

Ω

S

pFOutput Capacitance C

nC Gate-Source Charge Q

ns

nH

A

V

ns

µC

www.vishay.com Document Number: 91078
2 S09-0017-Rev. A, 19-Jan-09

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

2

10

1

10

, Drain Current (A)

D

- I

10

91078_01

Fig. 1 - Typical Output Characteristics, TC = 25 °C

V

To p

Bottom

GS

- 15 V

- 10 V

- 8.0 V

- 7.0 V

- 6.0 V

- 5.5 V

- 5.0 V

- 4.5 V

0

1

10

- VDS, Drain-to-Source Voltage (V)

- 4.5 V

20 µs Pulse Width

= 25 °C

T

C

91078_03

10

, Drain Current (A)

D

- I

IRF9540, SiHF9540

Vishay Siliconix

25 °C

175 °C

1

20 µs Pulse Width

= - 50 V

V

DS

4

5678

- V

Gate-to-Source Voltage (V)

,

GS

Fig. 3 - Typical Transfer Characteristics

10

9

V

GS

- 15 V

- 10 V

- 8.0 V

- 7.0 V

- 6.0 V

- 5.5 V

- 5.0 V

- 4.5 V

10

- V

Drain-to-Source Voltage (V)

,

DS

, Drain Current (A)

D

- I

91078_02

To p

Bottom

1

10

0

10

Fig. 2 - Typical Output Characteristics, T

- 4.5 V

20 µs Pulse Width
T

= 175 °C

C

1

= 175 ° C

C

3.0
I

= - 19 A

D

V

= - 10 V

GS

2.5

2.0

1.5

(Normalized)

1.0

, Drain-to-Source On Resistance

0.5

DS(on)

0.0

R

- 60- 40 - 20 0 20 40 6080100 120140 160

T

Junction Temperature (°C)

91078_04

,

J

Fig. 4 - Normalized On-Resistance vs. Temperature

180

Document Number: 91078 www.vishay.com
S09-0017-Rev. A, 19-Jan-09 3