VISHAY IRF 9520 Datasheet

Power MOSFET

IRF9520, SiHF9520

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) - 100

R

(Ω)V

DS(on)

Q

(Max.) (nC) 18

g

Q

(nC) 3.0

gs

Q

(nC) 9.0

gd

Configuration Single

= - 10 V 0.60

GS

S

FEATURES

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

• P-Channel

• 175 °C Operating Temperature

• Fast Switching

• Ease of Paralleling

• Simple Drive Requirements

• Lead (Pb)-free Available

TO-220

DESCRIPTION

G

S

D

G

D

P-Channel MOSFET

Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.

ORDERING INFORMATION

Package TO-220

Lead (Pb)-free

SnPb

IRF9520PbF
SiHF9520-E3
IRF9520
SiHF9520

Available

RoHS*

COMPLIANT

ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

Gate-Source Voltage V

T

= 25 °C

Continuous Drain Current V

Pulsed Drain Current

a

at - 10 V

GS

C

= 100 °C - 4.8

C

DS

± 20

GS

I

D

IDM - 27

Linear Derating Factor 0.40 W/°C

Single Pulse Avalanche Energy

Repetitive Avalanche Current

Repetitive Avalanche Energy

Maximum Power Dissipation T

Peak Diode Recovery dV/dt

b

a

a

= 25 °C P

c

C

Operating Junction and Storage Temperature Range T

E

AS

I

AR

E

AR

D

dV/dt - 5.5 V/ns

, T

J

stg

Soldering Recommendations (Peak Temperature) for 10 s 300

Mounting Torque 6-32 or M3 screw

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V

= - 25 V, starting TJ = 25 °C, L = 9.7 mH, RG = 25 Ω, IAS = - 6.8 A (see fig. 12).

DD

c. I

≤ - 6.8 A, dI/dt ≤ 110 A/µs, VDD ≤ VDS, TJ ≤ 175 °C.

SD

d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91074 www.vishay.com
S-81272-Rev. A, 16-Jun-08 1

- 100

- 6.8

300 mJ

- 6.8 A

6.0 mJ

60 W

- 55 to + 175

d

10 lbf · in

1.1 N · m

V

AT

°C

IRF9520, SiHF9520

Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient R

Maximum Junction-to-Case (Drain) R

thJA

thCS

thJC

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

Temperature Coefficient ΔVDS/TJ Reference to 25 °C, ID = - 1 mA - - 0.10 -

V

DS

Gate-Source Threshold Voltage V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

Drain-Source On-State Resistance R

Forward Transconductance g

Dynamic

Input Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Gate-Drain Charge Q

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Internal Drain Inductance L

Internal Source Inductance L

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

Pulsed Diode Forward Current

a

Body Diode Voltage V

Body Diode Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

Forward Turn-On Time t

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.

DS

GS(th)

V

GSS

DSS

VGS = - 10 V ID = - 4.1 A

DS(on)

fs

iss

- 170 -

oss

-45-

rss

g

--3.0

gs

--9.0

gd

d(on)

r

-21-

d(off)

-25-

f

D

V

V

GS

R

Between lead,
6 mm (0.25") from
package and center of

S

S

die contact

MOSFET symbol
showing the
integral reverse

I

SM

SD

rr

rr

on

p - n junction diode

TJ = 25 °C, IS = - 6.8 A, VGS = 0 V

TJ = 25 °C, IF = - 6.8 A, dI/dt = 100 A/µs

-62

0.50 -

°C/WCase-to-Sink, Flat, Greased Surface R

-2.5

VGS = 0 V, ID = - 250 µA - 100 - -

VDS = VGS, ID = - 250 µA - 2.0 -

= ± 20 V - - ± 100

GS

- 4.0 V

VDS = - 100 V, VGS = 0 V - - - 100

= - 80 V, VGS = 0 V, TJ = 150 °C - - - 500

DS

VDS = - 50 V, ID = - 4.1 A

VGS = 0 V,

V

= - 25 V,

DS

f = 1.0 MHz, see fig. 5

b

b

- - 0.60

2.0 - -

- 390 -

--18

= - 6.8 A, VDS = - 80 V,

I

= - 10 V

D

see fig. 6 and 13

b

-9.6-

V

= - 50 V, ID = - 6.8 A,

DD

= 18 Ω, RD = 7.1 Ω, see fig. 10

G

G

G

b

D

S

D

S

b

-29-

-4.5-

-7.5-

--- 6.8

--- 27

--- 6.3

-98200

b

- 0.33 0.66

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

V

V/°C

nA

µA

Ω

S

pFOutput Capacitance C

nC Gate-Source Charge Q

ns

nH

A

V

ns

µC

www.vishay.com Document Number: 91074
2 S-81272-Rev. A, 16-Jun-08

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

IRF9520, SiHF9520

Vishay Siliconix

Fig. 1 - Typical Output Characteristics, TC = 25 °C

Fig. 2 - Typical Output Characteristics, T

= 175 °C

C

Fig. 3 - Typical Transfer Characteristics

Fig. 4 - Normalized On-Resistance vs. Temperature

Document Number: 91074 www.vishay.com
S-81272-Rev. A, 16-Jun-08 3

IRF9520, SiHF9520

Vishay Siliconix

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

Fig. 7 - Typical Source-Drain Diode Forward Voltage

Fig. 8 - Maximum Safe Operating Area

www.vishay.com Document Number: 91074
4 S-81272-Rev. A, 16-Jun-08

IRF9520, SiHF9520

Vishay Siliconix

R

D.U.T.

D

-

+

V

DS

V

GS

R

G

- 10 V

Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %

Fig. 10a - Switching Time Test Circuit

V

DD

Fig. 9 - Maximum Drain Current vs. Case Temperature

V

10 %

90 %

V

t

t

d(on)

GS

DS

r

t

d(off)

t

f

Fig. 10b - Switching Time Waveforms

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

Vary tp to obtain
required I

AS

R

G

- 10 V

V

L

DS

D.U.T

I

AS

t

p

0.01 Ω

-

V

+

DD

I

AS

V

DS

V

t

p

V

DD

DS

Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms

Document Number: 91074 www.vishay.com
S-81272-Rev. A, 16-Jun-08 5

IRF9520, SiHF9520

Vishay Siliconix

Fig. 12c - Maximum Avalanche Energy vs. Drain Current

Q

- 10 V

V

Q

GS

G

G

Q

GD

Charge

Fig. 13a - Basic Gate Charge Waveform

Current regulator

Same type as D.U.T.

50 kΩ

0.2 µF

12 V

0.3 µF

D.U.T.

V

GS

- 3 mA

I

G

Current sampling resistors

I

D

Fig. 13b - Gate Charge Test Circuit

-

V

+

DS

www.vishay.com Document Number: 91074
6 S-81272-Rev. A, 16-Jun-08

IRF9520, SiHF9520

Peak Diode Recovery dV/dt Test Circuit

Vishay Siliconix

D.U.T.

+

Circuit layout considerations

• Low stray inductance

• Ground plane

• Low leakage inductance

-

current transformer

+

-

R

G

• dV/dt controlled by R

• ISD controlled by duty factor "D"

• D.U.T. - device under test

Compliment N-Channel of D.U.T. for driver

Driver gate drive

P.W.

Period

-

D =

G

P.W.

Period

+

+

V

DD

-

= - 10 V*

V

GS

waveform

SD

Body diode forward

current

waveform

DS

Body diode forward drop

Ripple ≤ 5 %

= - 5 V for logic level and - 3 V drive devices

GS

dI/dt

Diode recovery

dV/dt

V

DD

I

SD

Reverse
recovery
current

Re-applied
voltage

D.U.T. I

D.U.T. V

Inductor current

* V

Fig. 14 - For P-Channel

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?91074.

Document Number: 91074 www.vishay.com
S-81272-Rev. A, 16-Jun-08 7

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Vishay

Disclaimer

All product specifications and data are subject to change without notice.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.

Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.

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Product names and markings noted herein may be trademarks of their respective owners.

Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1