VISHAY IRF 840 VIS Datasheet

Power MOSFET

IRF840, SiHF840

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) 500

R

(Ω)V

DS(on)

Q

(Max.) (nC) 63

g

Q

(nC) 9.3

gs

Q

(nC) 32

gd

Configuration Single

TO-220

= 10 V 0.85

GS

D

FEATURES

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

• Fast Switching

• Ease of Paralleling

• Simple Drive Requirements

• Lead (Pb)-free Available

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,

G

ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220 package is universally preferred for all

S

D

G

N-Channel MOSFET

S

commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.

ORDERING INFORMATION

Package TO-220

Lead (Pb)-free

SnPb

IRF840PbF
SiHF840-E3
IRF840
SiHF840

Available

RoHS*

COMPLIANT

ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

Gate-Source Voltage V

= 25 °C

T

Continuous Drain Current V

Pulsed Drain Current

a

at 10 V

GS

C

= 100 °C 5.1

C

DS

± 20 V

GS

I

D

IDM 32

Linear Derating Factor 1.0 W/°C

Single Pulse Avalanche Energy

Repetitive Avalanche Current

Repetitive Avalanche Energy

Maximum Power Dissipation T

Peak Diode Recovery dV/dt

b

a

a

= 25 °C P

c

C

Operating Junction and Storage Temperature Range T

E

AS

I

AR

E

AR

D

dV/dt 3.5 V/ns

, T

J

stg

Soldering Recommendations (Peak Temperature) for 10 s 300

Mounting Torque 6-32 or M3 screw

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V

= 50 V, starting TJ = 25 °C, L = 14 mH, RG = 25 Ω, IAS = 8.0 A (see fig. 12).

DD

c. I

≤ 8.0 A, dI/dt ≤ 100 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.

SD

d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91070 www.vishay.com
S-81290-Rev. B, 16-Jun-08 1

500 V

8.0

510 mJ

8.0 A

13 mJ

125 W

- 55 to + 150

d

10 lbf · in

1.1 N · m

AT

°C

IRF840, SiHF840

Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient R

Maximum Junction-to-Case (Drain) R

thJA

thCS

thJC

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

Temperature Coefficient ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.78 -

V

DS

Gate-Source Threshold Voltage V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

Drain-Source On-State Resistance R

Forward Transconductance g

Dynamic

Input Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Gate-Drain Charge Q

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Internal Drain Inductance L

Internal Source Inductance L

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

Pulsed Diode Forward Current

a

Body Diode Voltage V

Body Diode Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

Forward Turn-On Time t

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.

DS

GS(th)

V

GSS

DSS

V

DS(on)

fs

iss

- 310 -

oss

- 120 -

rss

g

--9.3

gs

--32

gd

d(on)

r

-49-

d(off)

-20-

f

D

V

V

R

Between lead,
6 mm (0.25") from
package and center of

S

S

I

SM

SD

rr

rr

on

die contact

MOSFET symbol
showing the
integral reverse

p - n junction diode

TJ = 25 °C, IF = 8 A, dI/dt = 100 A/µs

-62

0.50 -

°C/WCase-to-Sink, Flat, Greased Surface R

-1.0

VGS = 0 V, ID = 250 µA 500 - -

VDS = VGS, ID = 250 µA 2.0 -

= ± 20 V - -

GS

VDS = 500 V, VGS = 0 V - -

= 400 V, VGS = 0 V, TJ = 125 °C - -

DS

= 10 V ID = 4.8 A

GS

VDS = 50 V, ID = 4.8 A

VGS = 0 V,

= 25 V,

V

DS

b

b

--

4.9 - -

- 1300 -

4.0 V

± 100 nA

25

250

0.85 Ω

f = 1.0 MHz, see fig. 5

--63

= 8 A, VDS = 400 V,

I

= 10 V

GS

D

see fig. 6 and 13

b

-14-

= 250 V, ID = 8 A

V

DD

= 9.1 Ω, RD = 31 Ω, see fig. 10

G

G

G

TJ = 25 °C, IS = 8 A, VGS = 0 V

b

D

S

D

S

b

-23-

-4.5-

-7.5-

--8.0

--32

--

-

b

460 970 ns

-

4.2 8.9 µC

2.0 V

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

V

V/°C

µA

S

pFOutput Capacitance C

nC Gate-Source Charge Q

ns

nH

A

www.vishay.com Document Number: 91070
2 S-81290-Rev. B, 16-Jun-08

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

V

GS

15 V

10 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

4.5 V

20 µs Pulse Width
T

= 25 °C

C

1

10

VDS, Drain-to-Source Voltage (V)

4.5 V

, Drain Current (A)
I

91070_03

, Drain Current (A)

D

I

91070_01

To p

1

10

Bottom

0

10

0

10

IRF840, SiHF840

Vishay Siliconix

150 °C

1

10

25 °C

0

10

D

20 µs Pulse Width

= 50 V

V

DS

4

5678 910

V

Gate-to-Source Voltage (V)

,

GS

Fig. 1 - Typical Output Characteristics, TC = 25 °C

V

To p

1

10

GS

15 V
10 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

Bottom

4.5 V

, Drain Current (A)

D

I

0

91070_02

10

0

10

V

Drain-to-Source Voltage (V)

,

DS

20 µs Pulse Width
T

= 150 °C

C

1

10

Fig. 2 - Typical Output Characteristics, T

4.5 V

= 150 °C

C

Fig. 3 - Typical Transfer Characteristics

3.0

ID = 8.0 A

= 10 V

V

GS

2.5

2.0

1.5

(Normalized)

1.0

0.5

, Drain-to-Source On Resistance

DS(on)

0.0

R

- 60 - 40 - 20 0 20 40 60 80 100 120 140 160

T

Junction Temperature (°C)

91070_04

,

J

Fig. 4 - Normalized On-Resistance vs. Temperature

Document Number: 91070 www.vishay.com
S-81290-Rev. B, 16-Jun-08 3

IRF840, SiHF840

Vishay Siliconix

2500

2000

1500

V

= 0 V, f = 1 MHz

GS

= Cgs + Cgd, Cds Shorted

C

iss

= C

C

rss

gd

C

= Cds + C

oss

gd

C

iss

1000

Capacitance (pF)

500

0

0

10

91070_05

V

Drain-to-Source Voltage (V)

,

DS

C

oss

C

rss

1

10

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

20

ID = 8.0 A

V

16

V

V

= 100 V

12

DS

= 250 V

DS

= 400 V

DS

150 °C

1

10

25 °C

, Reverse Drain Current (A)

SD

I

91070_07

0

10

0.4 1.00.80.6

VSD, Source-to-Drain Voltage (V)

1.2

V

= 0 V

GS

Fig. 7 - Typical Source-Drain Diode Forward Voltage

2

10

5

2

10

5

Operation in this area limited

by R

DS(on)

10 µs

100 µs

1.4

8

4

, Gate-to-Source Voltage (V)

GS

V

91070_06

0

0

15

30

QG, Total Gate Charge (nC)

For test circuit
see figure 13

6045

75

Fig. 6 - Typical Gate Charge vs. Drain-to-Source Voltage

, Drain Current (A)

D

I

91070_08

2

1

5

TC = 25 °C

= 150 °C

T

J

Single Pulse

251025

1

0.1

2

0.1

25

VDS, Drain-to-Source Voltage (V)

Fig. 8 - Maximum Safe Operating Area

10

25

2

1 ms

10 ms

3

10

25

4

10

www.vishay.com Document Number: 91070
4 S-81290-Rev. B, 16-Jun-08

8.0

6.0

4.0

, Drain Current (A)

D

2.0

I

0.0
25 1501251007550

91070_09

TC, Case Temperature (°C)

Fig. 9 - Maximum Drain Current vs. Case Temperature

IRF840, SiHF840

Vishay Siliconix

R

D.U.T.

D

+

-

t

t

d(off)

f

V

DS

V

GS

R

G

10 V

Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %

Fig. 10a - Switching Time Test Circuit

V

DS

90 %

10 %

V

GS

t

t

d(on)

r

Fig. 10b - Switching Time Waveforms

V

DD

)

thJC

Thermal Response (Z

91070_11

Vary tp to obtain
required I

AS

R

10

0.1

10

10

G

10 V

1

0 - 0.5

0.2

0.1

0.05

0.02

0.01

-2

Single Pulse
(Thermal Response)

P

DM

t

1

t

2

Notes:

1. Duty Factor, D = t

-3

-5

10

-4

10

-3

10

-2

10

0.1 1 10

2. Peak Tj = PDM x Z

1/t2

thJC

+ T

C

2

10

t1, Rectangular Pulse Duration (S)

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

V

L

DS

t

p

D.U.T.

I

AS

t

p

0.01 Ω

+

V

DD

-

V

DS

I

AS

V

DS

V

DD

Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms

Document Number: 91070 www.vishay.com
S-81290-Rev. B, 16-Jun-08 5

IRF840, SiHF840

Vishay Siliconix

10 V

1200

1000

To p

Bottom

I

D

3.6 A

5.1 A

8.0 A

800

600

400

, Single Pulse Energy (mJ)

200

AS

E

91070_12c

VDD = 50 V

0

25 150

50

Starting T

, Junction Temperature (°C)

J

10075

125

Fig. 12c - Maximum Avalanche Energy vs. Drain Current

Current regulator

Same type as D.U.T.

Q

G

Q

GS

Q

GD

12 V

0.2 µF

50 kΩ

0.3 µF

D.U.T.

+

V

DS

-

V

G

Charge

Fig. 13a - Basic Gate Charge Waveform

V

GS

3 mA

I

G

Current sampling resistors

I

D

Fig. 13b - Gate Charge Test Circuit

www.vishay.com Document Number: 91070
6 S-81290-Rev. B, 16-Jun-08

IRF840, SiHF840

Peak Diode Recovery dV/dt Test Circuit

Vishay Siliconix

D.U.T.

+

-

R

G

Driver gate drive

P.W.

+

Circuit layout considerations

• Low stray inductance

• Ground plane

• Low leakage inductance

current transformer

-

• dV/dt controlled by R

• Driver same type as D.U.T.

• I

controlled by duty factor "D"

SD

• D.U.T. - device under test

Period

-

D =

G

P.W.

Period

+

+

V

DD

-

= 10 V*

V

GS

waveform

SD

Body diode forward

current

waveform

DS

Body diode forward drop

Ripple ≤ 5 %

= 5 V for logic level devices

GS

Diode recovery

dV/dt

dI/dt

V

DD

I

SD

Reverse
recovery
current

Re-applied
voltage

D.U.T. I

D.U.T. V

Inductor current

* V

Fig. 14 - For N-Channel

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?91070.

Document Number: 91070 www.vishay.com
S-81290-Rev. B, 16-Jun-08 7

Legal Disclaimer Notice

Vishay

Disclaimer

All product specifications and data are subject to change without notice.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.

Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
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Product names and markings noted herein may be trademarks of their respective owners.

Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1