VISHAY IRF 840 VIS Datasheet

Power MOSFET

IRF840, SiHF840

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) 500

R

(Ω)V

DS(on)

Q

(Max.) (nC) 63

g

Q

(nC) 9.3

gs

Q

(nC) 32

gd

Configuration Single

TO-220

= 10 V 0.85

GS

D

FEATURES

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

• Fast Switching

• Ease of Paralleling

• Simple Drive Requirements

• Lead (Pb)-free Available

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,

G

ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220 package is universally preferred for all

S

D

G

N-Channel MOSFET

S

commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.

ORDERING INFORMATION

Package TO-220

Lead (Pb)-free

SnPb

IRF840PbF
SiHF840-E3
IRF840
SiHF840

Available

RoHS*

COMPLIANT

ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

Gate-Source Voltage V

= 25 °C

T

Continuous Drain Current V

Pulsed Drain Current

a

at 10 V

GS

C

= 100 °C 5.1

C

DS

± 20 V

GS

I

D

IDM 32

Linear Derating Factor 1.0 W/°C

Single Pulse Avalanche Energy

Repetitive Avalanche Current

Repetitive Avalanche Energy

Maximum Power Dissipation T

Peak Diode Recovery dV/dt

b

a

a

= 25 °C P

c

C

Operating Junction and Storage Temperature Range T

E

AS

I

AR

E

AR

D

dV/dt 3.5 V/ns

, T

J

stg

Soldering Recommendations (Peak Temperature) for 10 s 300

Mounting Torque 6-32 or M3 screw

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V

= 50 V, starting TJ = 25 °C, L = 14 mH, RG = 25 Ω, IAS = 8.0 A (see fig. 12).

DD

c. I

≤ 8.0 A, dI/dt ≤ 100 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.

SD

d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91070 www.vishay.com
S-81290-Rev. B, 16-Jun-08 1

500 V

8.0

510 mJ

8.0 A

13 mJ

125 W

- 55 to + 150

d

10 lbf · in

1.1 N · m

AT

°C

IRF840, SiHF840

Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient R

Maximum Junction-to-Case (Drain) R

thJA

thCS

thJC

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

Temperature Coefficient ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.78 -

V

DS

Gate-Source Threshold Voltage V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

Drain-Source On-State Resistance R

Forward Transconductance g

Dynamic

Input Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Gate-Drain Charge Q

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Internal Drain Inductance L

Internal Source Inductance L

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

Pulsed Diode Forward Current

a

Body Diode Voltage V

Body Diode Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

Forward Turn-On Time t

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.

DS

GS(th)

V

GSS

DSS

V

DS(on)

fs

iss

- 310 -

oss

- 120 -

rss

g

--9.3

gs

--32

gd

d(on)

r

-49-

d(off)

-20-

f

D

V

V

R

Between lead,
6 mm (0.25") from
package and center of

S

S

I

SM

SD

rr

rr

on

die contact

MOSFET symbol
showing the
integral reverse

p - n junction diode

TJ = 25 °C, IF = 8 A, dI/dt = 100 A/µs

-62

0.50 -

°C/WCase-to-Sink, Flat, Greased Surface R

-1.0

VGS = 0 V, ID = 250 µA 500 - -

VDS = VGS, ID = 250 µA 2.0 -

= ± 20 V - -

GS

VDS = 500 V, VGS = 0 V - -

= 400 V, VGS = 0 V, TJ = 125 °C - -

DS

= 10 V ID = 4.8 A

GS

VDS = 50 V, ID = 4.8 A

VGS = 0 V,

= 25 V,

V

DS

b

b

--

4.9 - -

- 1300 -

4.0 V

± 100 nA

25

250

0.85 Ω

f = 1.0 MHz, see fig. 5

--63

= 8 A, VDS = 400 V,

I

= 10 V

GS

D

see fig. 6 and 13

b

-14-

= 250 V, ID = 8 A

V

DD

= 9.1 Ω, RD = 31 Ω, see fig. 10

G

G

G

TJ = 25 °C, IS = 8 A, VGS = 0 V

b

D

S

D

S

b

-23-

-4.5-

-7.5-

--8.0

--32

--

-

b

460 970 ns

-

4.2 8.9 µC

2.0 V

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

V

V/°C

µA

S

pFOutput Capacitance C

nC Gate-Source Charge Q

ns

nH

A

www.vishay.com Document Number: 91070
2 S-81290-Rev. B, 16-Jun-08

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

V

GS

15 V

10 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

4.5 V

20 µs Pulse Width
T

= 25 °C

C

1

10

VDS, Drain-to-Source Voltage (V)

4.5 V

, Drain Current (A)
I

91070_03

, Drain Current (A)

D

I

91070_01

To p

1

10

Bottom

0

10

0

10

IRF840, SiHF840

Vishay Siliconix

150 °C

1

10

25 °C

0

10

D

20 µs Pulse Width

= 50 V

V

DS

4

5678 910

V

Gate-to-Source Voltage (V)

,

GS

Fig. 1 - Typical Output Characteristics, TC = 25 °C

V

To p

1

10

GS

15 V
10 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

Bottom

4.5 V

, Drain Current (A)

D

I

0

91070_02

10

0

10

V

Drain-to-Source Voltage (V)

,

DS

20 µs Pulse Width
T

= 150 °C

C

1

10

Fig. 2 - Typical Output Characteristics, T

4.5 V

= 150 °C

C

Fig. 3 - Typical Transfer Characteristics

3.0

ID = 8.0 A

= 10 V

V

GS

2.5

2.0

1.5

(Normalized)

1.0

0.5

, Drain-to-Source On Resistance

DS(on)

0.0

R

- 60 - 40 - 20 0 20 40 60 80 100 120 140 160

T

Junction Temperature (°C)

91070_04

,

J

Fig. 4 - Normalized On-Resistance vs. Temperature

Document Number: 91070 www.vishay.com
S-81290-Rev. B, 16-Jun-08 3