Vishay IRF740B Data Sheet

www.vishay.com

N-Channel MOSFET

G

D

S

TO-220AB

G

D

S

Available

IRF740B

Vishay Siliconix

D Series Power MOSFET

PRODUCT SUMMARY

VDS (V) at TJ max. 450

R

max. () at 25 °C VGS = 10 V 0.6

DS(on)

Q

max. (nC) 30

g

Q

(nC) 4

gs

Q

(nC) 7

gd

Configuration Single

FEATURES

• Optimal design

- Low area specific on-resistance

- Low input capacitance (C

iss

)

- Reduced capacitive switching losses

- High body diode ruggedness

- Avalanche energy rated (UIS)

• Optimal efficiency and operation

- Low cost

- Simple gate drive circuitry

- Low figure-of-merit (FOM): R

on

x Q

g

- Fast switching

• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912

Note

*

Thi s datasheet pro vi des information about parts that are
RoHS-compliant and / or parts that are non-RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details.

APPLICATIONS

• Consumer electronics

- Displays (LCD or plasma TV)

• Server and telecom power supplies

- SMPS

• Industrial

- Welding

- Induction heating

- Motor drives

• Battery chargers





ORDERING INFORMATION

Package TO-220AB

Lead (Pb)-free IRF740BPbF

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

Gate-Source Voltage AC (f > 1 Hz) 30

T

= 25 °C

Continuous Drain Current (T

Pulsed Drain Current

a

= 150 °C) VGS at 10 V

J

C

= 100 °C 6

C

DS

V

GS

I

D

IDM 23

Linear Derating Factor 1.2 W/°C

Single Pulse Avalanche Energy

Maximum Power Dissipation P

Operating Junction and Storage Temperature Range T

Drain-Source Voltage Slope T

Reverse Diode dV/dt

d

Soldering Recommendations (Peak temperature)

b

= 125 °C

J

c

for 10 s 300 °C

E

AS

D

, T

J

dV/dt

stg

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature.
b. V

= 50 V, starting TJ = 25 °C, L = 2.3 mH, Rg = 25 , IAS = 13 A.

DD

c. 1.6 mm from case.
d. I

 ID, starting TJ = 25 °C.

SD

S16-0799-Rev. B, 02-May-16

1

For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

400

± 30

10

194 mJ

147 W

-55 to +150 °C

24

0.6

Document Number: 91519

V Gate-Source Voltage

AT

V/ns

IRF740B

S

D

G

www.vishay.com

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient R

Maximum Junction-to-Case (Drain) R

thJA

thJC

-62

-0.85

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

V

Temperature Coefficient

DS

Gate-Source Threshold Voltage (N) V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

Drain-Source On-State Resistance R

Forward Transconductance g

Dynamic

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Effective Output Capacitance, Energy

a

Related

Effective Output Capacitance, Time

b

Related

Total Gate Charge Q

Gate-Drain Charge Q

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Gate Input Resistance R

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

Pulsed Diode Forward Current I

Diode Forward Voltage V

Reverse Recovery Time t

Reverse Recovery Charge Q

Reverse Recovery Current I

Notes

a. C
b. C

is a fixed capacitance that gives the same energy as C

oss(er)

is a fixed capacitance that gives the same charging time as C

oss(tr)

DS

V

DS/TJ

GS(th)

V

GSS

DSS

V

DS(on)

fs

iss

-59-

oss

-9-

rss

C

o(er)

C

o(tr)

g

-7-

gd

d(on)

r

-1836

d(off)

-1428

f

g

S

MOSFET symbol
showing the 
integral reverse

SM

SD

rr

rr

RRM

p - n junction diode

VGS = 0 V, ID = 250 μA 400 - - V

Reference to 25 °C, I

= 250 μA

D

VDS = VGS, ID = 250 μA 3 - 5 V

= ± 30 V - - ± 100 nA

GS

VDS = 400 V, VGS = 0 V - - 1

= 320 V, VGS = 0 V, TJ = 125 °C - - 10

V

DS

= 10 V ID = 5 A - 0.5 0.6 

GS

VDS = 50 V, ID = 5 A - 2.7 - S

VGS = 0 V,

V

= 100 V,

DS

f = 1 MHz

VGS = 0 V,

V

= 0 V to 320 V

DS

V

= 10 V ID = 5 A, VDS = 320 V

GS

= 400 V, ID = 10 A,

V

DD

V

= 10 V, Rg = 9.1 

GS

f = 1 MHz, open drain 0.9 1.8 3.6 

TJ = 25 °C, IS = 5 A, VGS = 0 V - - 1.2 V

TJ = 25 °C, IF = IS = 5 A,

dI/dt = 100 A/μs

while VDS is rising from 0 % to 80 % VDS.

oss

while VDS is rising from 0 % to 80 % VDS.

oss

, V

= 25 V

R

Vishay Siliconix

°C/W

-0.53-

- 526 -

-66-

-84-

-1530

-1224

-1836

--10

--40

- 230 - ns

-1.6-μC

-14-A

V/°C

μA

pF

nC Gate-Source Charge Qgs -4-

ns

A

S16-0799-Rev. B, 02-May-16

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

For technical questions, contact: [e-mail]

2

Document Number: 91519

www.vishay.com

VDS, Drain-to-Source Voltage (V)

I

D

, Drain-to-Source Current (A)

0 5 10 15 20 25 30

11 V

0

5

10

15

20

25

TOP 15 V

14 V
13 V
12 V
11 V
10 V

9 V
8 V
7 V
6 V

BOTTOM 5 V

TJ = 25 °C

Qg, Total Gate Charge (nC)

V

GS

, Gate-to-Source Voltage (V)

16

4

0

24

20

12

8

VDS = 400 V
V

DS

= 250 V

V

DS

= 100 V

0 5 10 15 20 25

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

, Drain-to-Source

DS(on)

R

3

2.5

ID = 5 A

2

1.5

1

0.5

On Resistance (Normalized)

IRF740B

Vishay Siliconix

VGS = 10 V

Fig. 1 - Typical Output Characteristics

16

TOP 15 V

14 V
13 V
12 V
11 V

12

8

4

, Drain-to-Source Current (A)

D

I

10 V

BOTTOM 6 V

9 V
8 V
7 V

0

TJ = 150 °C

5 V

0 5 10 15 20 25 30

VDS, Drain-to-Source Voltage (V)

Fig. 2 - Typical Output Characteristics

25

0

- 60 - 40 - 20020 40 60 80 100 120

140

160

TJ, Junction Temperature (°C)

Fig. 4 - Normalized On-Resistance vs. Temperature

10 000

C

1000

iss

100

C

Capacitance (pF)

10

oss

C

rss

1

0

50 100 150 200 250 300 350 400

V

= 0 V, f = 1 MHz

GS

= Cgs + Cgd, Cds Shorted

C

iss

= C

C

rss

gd

C

= Cds + C

oss

gd

VDS, Drain-to-Source Voltage (V)

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

20

15

10

TJ = 25 °C

TJ = 150 °C

5

, Drain-to-Source Current (A)

D

I

0

0 5 10 15 20

VGS, Gate-to-Source Voltage (V)

Fig. 3 - Typical Transfer Characteristics

S16-0799-Rev. B, 02-May-16

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

25

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

3

Document Number: 91519

For technical questions, contact: [e-mail]