Vishay IRF620S, SiHF620S Data Sheet

Power MOSFET

IRF620S, SiHF620S

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) 200

R

()V

DS(on)

Q

(Max.) (nC) 14

g

Q

(nC) 3.0

gs

Q

(nC) 7.9

gd

Configuration Single

D2PAK (TO-263)

= 10 V 0.80

GS

D

FEATURES

• Halogen-free According to IEC 61249-2-21
Definition

• Surface Mount

• Available in Tape and Reel

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

•Fast Switching

• Simple Drive Requirements

• Ease of Paralleling

• Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,

G

ruggedized device design, low on-resistance and
cost-effectiveness.

2

The D

PAK (TO-263) is a surface mount power package

capable of accommodating die size up to HEX-4. It provides

D

G

S

N-Channel MOSFET

S

the highest power capability and the lowest possible
on-resistance in any existing surface mount package. The

2

D

PAK (TO-263) is suitable for high current applications
because of its low internal connection resistance and can
dissipate up to 2.0 W in a typical surface mount application.

ORDERING INFORMATION

Package D2PAK (TO-263) D2PAK (TO-263) D2PAK (TO-263)
Lead (Pb)-free and Halogen-free SiHF620S-GE3 SiHF620STRL-GE3

Lead (Pb)-free

IRF620SPbF IRF620STRLPbF
SiHF620S-E3 SiHF620STL-E3

Note

a. See device orientation.

a

a

a

SiHF620STRR-GE3
IRF620STRRPbF
SiHF620STR-E3

a

a

a

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V
Gate-Source Voltage V

= 25 °C

T

Continuous Drain Current V

Pulsed Drain Current

a

at 10 V

GS

C

T

= 100 °C 3.3

C

DS

± 20

GS

I

D

IDM 18
Linear Derating Factor 0.40
Linear Derating Factor (PCB Mount)
Single Pulse Avalanche Energy
Avalanche Current

a

Repetitive Avalanche Energy
Maximum Power Dissipation T
Maximum Power Dissipation (PCB Mount)
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range T

e

b

a

= 25 °C

e

c

C

TA = 25 °C 3.0

E

AS

I

AR

E

AR

P

D

dV/dt 5.0 V/ns

, T

J

stg

Soldering Recommendations (Peak Temperature) for 10 s 300

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V

= 50 V, starting TJ = 25 °C, L = 6.1 mH, Rg = 25 , IAS = 5.2 A (see fig. 12).

DD

c. I

 5.2 A, dI/dt  95 A/μs, VDD  VDS, TJ  150 °C.

SD

d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91028

www.vishay.com

S11-1046-Rev. D, 30-May-11 1

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

200

5.2

0.025
110 mJ

5.2 A

5.0 mJ
50

- 55 to + 150

d

www.vishay.com/doc?91000

V

A

W/°C

W

°C

D

S

G

IRF620S, SiHF620S

Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient R

Maximum Junction-to-Ambient
(PCB Mount)

a

Maximum Junction-to-Case (Drain) R

thJA

R

thJA

thJC

Note

a. When mounted on 1" square PCB (FR-4 or G-10 material).

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA - 0.29 - V/°C

V

DS

Gate-Source Threshold Voltage V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

Drain-Source On-State Resistance R

Forward Transconductance g

Dynamic

Input Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Gate-Drain Charge Q

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Dynamic

Internal Drain Inductance L

Internal Source Inductance L

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

Pulsed Diode Forward Current

a

Body Diode Voltage V

Body Diode Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

Forward Turn-On Time t

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.

www.vishay.com Document Number: 91028
2 S11-1046-Rev. D, 30-May-11

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

DS

GS(th)

V

GSS

DSS

VGS = 10 V ID = 3.1 A

DS(on)

fs

iss

- 100 -

oss

-30-

rss

g

--3.0

gs

--7.9

gd

d(on)

r

-19-

d(off)

-13-

f

D

V

V

GS

R

Between lead,
6 mm (0.25") from
package and center of

S

S

I

SM

SD

rr

rr

on

die contact

MOSFET symbol
showing the
integral reverse
p - n junction diode

TJ = 25 °C, IF = 4.8 A, dI/dt = 100 A/μs

This document is subject to change without notice.

-62

-40

°C/W

-2.5

VGS = 0, ID = 250 μA 200 - - V

VDS = VGS, ID = 250 μA 2.0 - 4.0 V

= ± 20 V - - ± 100 nA

GS

VDS = 200 V, VGS = 0 V - - 25

= 160 V, VGS = 0 V, TJ = 125 °C - - 250

DS

VDS = 50 V, ID = 3.1 A

VGS = 0 V,

V

= 25 V,

DS

f = 1.0 MHz, see fig. 5

b

b

- - 0.80 

1.5 - - S

- 260 -

--14

= 4.8 A, VDS = 160 V,

I

= 10 V

D

see fig. 6 and 13

b

-7.2-

V

= 100 V, ID = 4.8 A,

DD

= 18 , RD = 20 , see fig. 10

g

b

-22-

-4.5-

-7.5-

G

TJ = 25 °C, IS = 5.2 A, VGS = 0 V

D

S

b

--5.2

--18

--1.8V

- 150 300 ns

b

- 0.91 1.8 μC

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

www.vishay.com/doc?91000

μA

pFOutput Capacitance C

nC Gate-Source Charge Q

ns

nH

A

91028_01

Bottom

To p

V

GS

15 V
10 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

4.5 V

20 µs Pulse Width
T

C

= 25 °C

4.5 V

VDS, Drain-to-Source Voltage (V)

I

D

, Drain Current (A)

10

0

10

1

10

1

10

0

10

-1

10

-2

10

-2

10

-1

10

1

10

0

10

-1

10

0

10

1

V

DS

,

Drain-to-Source Voltage (V)

I

D

, Drain Current (A)

4.5 V

Bottom

To p

V

GS

15 V
10 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

4.5 V

20 µs Pulse Width
T

C

= 150 °C

91028_02

10

-2

10

-1

20 µs Pulse Width
V

DS

= 50 V

10

1

10

0

10

-1

I

D

, Drain Current (A)

V

GS

,

Gate-to-Source Voltage (V)

5678910

4

25 °C

150 °C

91028_03

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

IRF620S, SiHF620S

Vishay Siliconix

Fig. 1 - Typical Output Characteristics, TC = 25 °C

Fig. 2 - Typical Output Characteristics, T

= 150 °C

C

Fig. 3 - Typical Transfer Characteristics

3.0
I

= 4.8 A

D

= 10 V

V

GS

2.5

2.0

1.5

(Normalized)

1.0

, Drain-to-Source On Resistance

0.5

DS(on)

0.0

R

- 60 - 40 - 20 0 20 40 60 80 100 120

T

Junction Temperature (°C)

91028_04

,

J

Fig. 4 - Normalized On-Resistance vs. Temperature

140

160

Document Number: 91028 www.vishay.com
S11-1046-Rev. D, 30-May-11 3

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

This document is subject to change without notice.

www.vishay.com/doc?91000