Vishay IRF620S, SiHF620S Data Sheet

IRF620S, SiHF620S

Vishay Siliconix

Power MOSFET

PRODUCT SUMMARY

VDS (V)		200
RDS(on) ( )	VGS = 10 V		0.80
Qg (Max.) (nC)		14
Qgs (nC)		3.0
Qgd (nC)		7.9
Configuration		Single

D

D2PAK (TO-263)

G

G D

S

S

N-Channel MOSFET

FEATURES

•Halogen-free According to IEC 61249-2-21 Definition

• Surface Mount

• Available in Tape and Reel

• Dynamic dV/dt Rating

•Repetitive Avalanche Rated

•Fast Switching

•Simple Drive Requirements

•Ease of Paralleling

•Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The D2PAK (TO-263) is a surface mount power package capable of accommodating die size up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK (TO-263) is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application.

ORDERING INFORMATION
Package	D2PAK (TO-263)				D2PAK (TO-263)				D2PAK (TO-263)
Lead (Pb)-free and Halogen-free	SiHF620S-GE3				SiHF620STRL-GE3a				SiHF620STRR-GE3a
Lead (Pb)-free	IRF620SPbF				IRF620STRLPbFa				IRF620STRRPbFa
	SiHF620S-E3				SiHF620STL-E3a				SiHF620STR-E3a
Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER						SYMBOL		LIMIT			UNIT
Drain-Source Voltage						VDS		200			V
Gate-Source Voltage						VGS		± 20
Continuous Drain Current		VGS at 10 V		TC = 25 °C		ID		5.2
				TC = 100 °C				3.3			A
Pulsed Drain Currenta						IDM		18
Linear Derating Factor								0.40			W/°C
Linear Derating Factor (PCB Mount)e								0.025
Single Pulse Avalanche Energyb						EAS		110			mJ
Avalanche Currenta						IAR		5.2			A
Repetitive Avalanche Energya						EAR		5.0			mJ
Maximum Power Dissipation			TC = 25 °C			PD		50			W
Maximum Power Dissipation (PCB Mount)e			TA = 25 °C					3.0
Peak Diode Recovery dV/dtc						dV/dt		5.0			V/ns
Operating Junction and Storage Temperature Range						TJ, Tstg		- 55 to + 150			°C
Soldering Recommendations (Peak Temperature)			for 10 s						300d
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 °C, L = 6.1 mH, Rg = 25 , IAS = 5.2 A (see fig. 12).
c. ISD 5.2 A, dI/dt 95 A/μs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91028									www.vishay.com
S11-1046-Rev. D, 30-May-11											1

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF620S, SiHF620S

Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER	SYMBOL	TYP.	MAX.	UNIT
Maximum Junction-to-Ambient	RthJA	-	62
Maximum Junction-to-Ambient	RthJA	-	40	°C/W
(PCB Mount)a
Maximum Junction-to-Case (Drain)	RthJC	-	2.5

Note

a. When mounted on 1" square PCB (FR-4 or G-10 material).

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER		SYMBOL	TEST CONDITIONS								MIN.	TYP.	MAX.	UNIT
Static
Drain-Source Breakdown Voltage		VDS	VGS = 0, ID = 250 μA								200	-	-	V
VDS Temperature Coefficient		VDS/TJ	Reference to 25 °C, ID = 1 mA								-	0.29	-	V/°C
Gate-Source Threshold Voltage		VGS(th)	VDS = VGS, ID = 250 μA								2.0	-	4.0	V
Gate-Source Leakage		IGSS		VGS = ± 20 V							-	-	± 100	nA
Zero Gate Voltage Drain Current		IDSS	VDS = 200 V, VGS = 0 V								-	-	25	μA
			VDS = 160 V, VGS = 0 V, TJ = 125 °C								-	-	250
Drain-Source On-State Resistance		RDS(on)	VGS = 10 V			ID = 3.1 Ab					-	-	0.80
Forward Transconductance		gfs	VDS = 50 V, ID = 3.1 Ab								1.5	-	-	S
Dynamic
Input Capacitance		Ciss			VGS = 0 V,						-	260	-
Output Capacitance		Coss			VDS = 25 V,						-	100	-	pF
			f = 1.0 MHz, see fig. 5
Reverse Transfer Capacitance		Crss									-	30	-
Total Gate Charge		Qg			ID = 4.8 A, VDS = 160 V,						-	-	14
Gate-Source Charge		Qgs	VGS = 10 V								-	-	3.0	nC
					see fig. 6 and 13b
Gate-Drain Charge		Qgd									-	-	7.9
Turn-On Delay Time		td(on)									-	7.2	-
Rise Time		tr	VDD = 100 V, ID = 4.8 A,								-	22	-	ns
Turn-Off Delay Time		td(off)	Rg = 18 , RD = 20 , see fig. 10b								-	19	-
Fall Time		tf									-	13	-
Dynamic
Internal Drain Inductance		LD	Between lead,						D		-	4.5	-
			6 mm (0.25") from											nH
Internal Source Inductance		LS	package and center of			G					-	7.5	-
			die contact						S
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current		IS	MOSFET symbol							D	-	-	5.2
			showing the											A
Pulsed Diode Forward Currenta		ISM	integral reverse			G					-	-	18
			p - n junction diode							S
Body Diode Voltage		VSD	TJ = 25 °C, IS = 5.2 A, VGS = 0 Vb								-	-	1.8	V
Body Diode Reverse Recovery Time		trr	TJ = 25 °C, IF = 4.8 A, dI/dt = 100 A/μsb								-	150	300	ns
Body Diode Reverse Recovery Charge		Qrr									-	0.91	1.8	μC
Forward Turn-On Time		ton	Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes

a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b.Pulse width 300 μs; duty cycle 2 %.

www.vishay.com	Document Number: 91028
2	S11-1046-Rev. D, 30-May-11
	This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF620S, SiHF620S

Vishay Siliconix

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

<![if ! IE]>

<![endif]>ID, Drain Current (A)

101 Top	VGS
	15 V
	10 V
	8.0 V
	7.0 V
100	6.0 V
	5.5 V
	5.0 V
Bottom	4.5 V	4.5 V
10-1
		20 µs Pulse Width
10-2		TC = 25 °C

<![if ! IE]>

<![endif]>ID, Drain Current (A)

101

150 °C

100

25 °C

10-1

20 µs Pulse Width VDS = 50 V

10-2	10-1	100	101
91028_01	VDS, Drain-to-Source Voltage (V)

Fig. 1 - Typical Output Characteristics, TC = 25 °C

101

Top

VGS

15 V

10 V

<![if ! IE]> <![endif]>(A)

8.0 V

7.0 V

<![if ! IE]> <![endif]>Current

100

6.0 V

5.5 V

4.5

V

5.0 V

<![if ! IE]> <![endif]>, Drain

10-1

Bottom 4.5 V

<![if ! IE]> <![endif]>D

<![if ! IE]> <![endif]>I

20 µs Pulse Width

10-2

TC = 150 °C

10-1

100

101

91028_02

VDS, Drain-to-Source Voltage (V)

4	5	6	7	8	9	10
91028_03	VGS, Gate-to-Source Voltage (V)

Fig. 3 - Typical Transfer Characteristics

<![if ! IE]> <![endif]>Resistance	3.0
		ID = 4.8 A
<![if ! IE]> <![endif]>Source-to-DrainOn (Normalized)	2.5	VGS = 10 V
	2.0
	1.5
	1.0
<![if ! IE]> <![endif]>,	0.5
<![if ! IE]> <![endif]>DS(on)	0.0
<![if ! IE]> <![endif]>R
	- 60 - 40 - 20 0 20 40 60 80 100 120 140 160
91028_04			TJ, Junction Temperature (°C)

Fig. 2 - Typical Output Characteristics, TC = 150 °C

Fig. 4 - Normalized On-Resistance vs. Temperature

Document Number: 91028	www.vishay.com
S11-1046-Rev. D, 30-May-11	3

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000