Vishay IRF540, SiHF540 Data Sheet

IRF540, SiHF540

Vishay Siliconix

Power MOSFET

PRODUCT SUMMARY

VDS (V)

100

RDS(on) ( )

VGS = 10 V

0.077

Qg (Max.) (nC)

72

Qgs (nC)

11

Qgd (nC)

32

Configuration

Single

D

TO-220AB

G

S

D

G

S

N-Channel MOSFET

FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated	Available
• 175 °C Operating Temperature	RoHS*
• Fast Switching	COMPLIANT
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.

ORDERING INFORMATION
Package				TO-220AB
Lead (Pb)-free				IRF540PbF
				SiHF540-E3
SnPb				IRF540
				SiHF540
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER						SYMBOL	LIMIT		UNIT
Drain-Source Voltage						VDS	100		V
Gate-Source Voltage						VGS	± 20
Continuous Drain Current		VGS at 10 V		TC = 25 °C		ID	28
				TC = 100 °C			20		A
Pulsed Drain Currenta						IDM	110
Linear Derating Factor							1.0		W/°C
Single Pulse Avalanche Energyb						EAS	230		mJ
Repetitive Avalanche Currenta						IAR	28		A
Repetitive Avalanche Energya						EAR	15		mJ
Maximum Power Dissipation		TC = 25 °C				PD	150		W
Peak Diode Recovery dV/dtc						dV/dt	5.5		V/ns
Operating Junction and Storage Temperature Range						TJ, Tstg	- 55 to + 175		°C
Soldering Recommendations (Peak Temperature)		for 10 s					300d
Mounting Torque		6-32 or M3 screw					10		lbf · in
							1.1		N · m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, starting TJ = 25 °C, L = 440 μH, Rg = 25 , IAS = 28 A (see fig. 12).
c. ISD 28 A, dI/dt 170 A/μs, VDD VDS, TJ 175 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91021								www.vishay.com
S11-0510-Rev. B, 21-Mar-11								1

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF540, SiHF540

Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER	SYMBOL	TYP.	MAX.	UNIT
Maximum Junction-to-Ambient	RthJA	-	62
Case-to-Sink, Flat, Greased Surface	RthCS	0.50	-	°C/W
Maximum Junction-to-Case (Drain)	RthJC	-	1.0

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER		SYMBOL	TEST CONDITIONS									MIN.	TYP.	MAX.	UNIT
Static
Drain-Source Breakdown Voltage		VDS	VGS = 0 V, ID = 250 μA									100	-	-	V
VDS Temperature Coefficient		VDS/TJ	Reference to 25 °C, ID = 1 mA									-	0.13	-	V/°C
Gate-Source Threshold Voltage		VGS(th)	VDS = VGS, ID = 250 μA									2.0	-	4.0	V
Gate-Source Leakage		IGSS	VGS = ± 20 V									-	-	± 100	nA
Zero Gate Voltage Drain Current		IDSS	VDS = 100 V, VGS = 0 V									-	-	25	μA
			VDS = 80 V, VGS = 0 V, TJ = 150 °C									-	-	250
Drain-Source On-State Resistance		RDS(on)	VGS = 10 V		ID = 17 Ab							-	-	0.077
Forward Transconductance		gfs	VDS = 50 V, ID = 17 Ab									8.7	-	-	S
Dynamic
Input Capacitance		Ciss	VGS = 0 V,									-	1700	-
Output Capacitance		Coss	VDS = 25 V,									-	560	-	pF
Reverse Transfer Capacitance		Crss	f = 1.0 MHz, see fig. 5									-	120	-
Total Gate Charge		Qg		ID = 17 A, VDS = 80 V,								-	-	72
Gate-Source Charge		Qgs	VGS = 10 V									-	-	11	nC
					see fig. 6 and 13b
Gate-Drain Charge		Qgd										-	-	32
Turn-On Delay Time		td(on)										-	11	-
Rise Time		tr	VDD = 50 V, ID = 17 A									-	44	-	ns
Turn-Off Delay Time		td(off)	Rg = 9.1 , RD = 2.9 , see fig. 10b									-	53	-
Fall Time		tf										-	43	-
Internal Drain Inductance		LD	Between lead,							D		-	4.5	-
			6 mm (0.25") from
Internal Source Inductance		LS	package and center of			G						-	7.5	-	nH
			die contact
										S
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current		IS	MOSFET symbol								D	-	-	28
			showing the												A
			integral reverse			G
Pulsed Diode Forward Currenta		ISM	p - n junction diode								S	-	-	110
Body Diode Voltage		VSD	TJ = 25 °C, IS = 28 A, VGS = 0 Vb									-	-	2.5	V
Body Diode Reverse Recovery Time		trr	TJ = 25 °C, IF = 17 A, dI/dt = 100 A/μsb									-	180	360	ns
Body Diode Reverse Recovery Charge		Qrr										-	1.3	2.8	μC
Forward Turn-On Time		ton	Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes

a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b.Pulse width 300 μs; duty cycle 2 %.

www.vishay.com	Document Number: 91021
2	S11-0510-Rev. B, 21-Mar-11

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

			VGS			102
	102	Top
			15 V
			10 V
<![if ! IE]> <![endif]>(A)			8.0 V		<![if ! IE]> <![endif]>(A)
			7.0 V
<![if ! IE]> <![endif]>Current			6.0 V		<![if ! IE]> <![endif]>Current
			5.5 V
			5.0 V
		Bottom 4.5 V
<![if ! IE]> <![endif]>Drain,	101			4.5 V	<![if ! IE]> <![endif]>Drain,
						101
<![if ! IE]> <![endif]>D					<![if ! IE]> <![endif]>D
<![if ! IE]> <![endif]>I					<![if ! IE]> <![endif]>I
				20 µs Pulse Width
				TC = 25 °C
	10-1		100	101		4
91021_01			VDS, Drain-to-Source Voltage (V)		91021_03

IRF540, SiHF540

Vishay Siliconix

25 °C

175 °C

20 µs Pulse Width VDS = 50 V

5

6

7

8

9

10

VGS, Gate-to-Source Voltage (V)

Fig. 1 - Typical Output Characteristics, TC = 25 °C

Fig. 3 - Typical Transfer Characteristics

102

Top

VGS

15 V

10 V

<![if ! IE]> <![endif]>(A)

8.0 V

7.0 V

<![if ! IE]> <![endif]>Current

6.0 V

5.5 V

5.0 V

101

4.5 V

<![if ! IE]> <![endif]>, Drain

Bottom 4.5 V

<![if ! IE]> <![endif]>D

<![if ! IE]> <![endif]>I

20 µs Pulse Width

TC = 175 °C

10-1

100

101

91021_02

VDS, Drain-to-Source Voltage (V)

Fig. 2 - Typical Output Characteristics, TC = 175 °C

<![if ! IE]>

<![endif]>RDS(on), Drain-to-Source On Resistance (Normalized)

91021_04

3.0

ID = 17 A

VGS = 10 V

2.5

2.0

1.5

1.0

0.5

0.0 - 60 - 40 - 20 0 20 40 60 80 100 120 140 160180

TJ, Junction Temperature (°C)

Fig. 4 - Normalized On-Resistance vs. Temperature

Document Number: 91021	www.vishay.com
S11-0510-Rev. B, 21-Mar-11	3

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000