Power MOSFET
IRF530, SiHF530
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) 100
R
(Ω)V
DS(on)
Q
(Max.) (nC) 26
g
Q
(nC) 5.5
gs
Q
(nC) 11
gd
Configuration Single
TO-220
= 10 V 0.16
GS
D
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• 175 °C Operating Temperature
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
G
ruggedized device design, low on-resistance and
cost-effectiveness.
S
D
G
N-Channel MOSFET
S
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
ORDERING INFORMATION
Package TO-220
Lead (Pb)-free
SnPb
IRF530PbF
SiHF530-E3
IRF530
SiHF530
Available
RoHS*
COMPLIANT
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate-Source Voltage V
= 25 °C
T
Continuous Drain Current V
Pulsed Drain Current
a
at 10 V
GS
C
= 100 °C 10
C
DS
± 20
GS
I
D
IDM 56
Linear Derating Factor 0.59 W/°C
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation T
Peak Diode Recovery dV/dt
b
a
a
= 25 °C P
c
C
Operating Junction and Storage Temperature Range T
E
AS
I
AR
E
AR
D
dV/dt 5.5 V/ns
, T
J
stg
Soldering Recommendations (Peak Temperature) for 10 s 300
Mounting Torque 6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
= 25 V, starting TJ = 25 °C, L = 528 µH, RG = 25 Ω, IAS = 14 A (see fig. 12).
DD
c. I
≤ 14 A, dI/dt ≤ 140 A/µs, VDD ≤ VDS, TJ ≤ 175 °C.
SD
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91019 www.vishay.com
S-81240-Rev. A, 16-Jun-08 1
100
14
69 mJ
14 A
8.8 mJ
88 W
- 55 to + 175
d
10 lbf · in
1.1 N · m
V
AT
°C
IRF530, SiHF530
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient R
Maximum Junction-to-Case (Drain) R
thJA
thCS
thJC
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
Temperature Coefficient ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.12 -
V
DS
Gate-Source Threshold Voltage V
Gate-Source Leakage I
Zero Gate Voltage Drain Current I
Drain-Source On-State Resistance R
Forward Transconductance g
Dynamic
Input Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Q
Gate-Drain Charge Q
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Internal Drain Inductance L
Internal Source Inductance L
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
Pulsed Diode Forward Current
a
Body Diode Voltage V
Body Diode Reverse Recovery Time t
Body Diode Reverse Recovery Charge Q
Forward Turn-On Time t
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
DS
GS(th)
V
GSS
DSS
V
DS(on)
fs
iss
- 250 -
oss
-60-
rss
g
--5.5
gs
--11
gd
d(on)
r
-23-
d(off)
-24-
f
D
V
V
R
Between lead,
6 mm (0.25") from
package and center of
S
S
I
SM
SD
rr
rr
on
die contact
MOSFET symbol
showing the
integral reverse
p - n junction diode
TJ = 25 °C, IF = 14 A, dI/dt = 100 A/µs
-62
0.50 -
°C/WCase-to-Sink, Flat, Greased Surface R
-1.7
VGS = 0 V, ID = 250 µA 100 - -
VDS = VGS, ID = 250 µA 2.0 -
= ± 20 V - -
GS
VDS = 100 V, VGS = 0 V - -
= 80 V, VGS = 0 V, TJ = 150 °C - -
DS
= 10 V ID = 8.4 A
GS
VDS = 50 V, ID = 8.4 A
VGS = 0 V,
= 25 V,
V
DS
b
b
--
5.1 - -
- 670 -
4.0 V
± 100 nA
25
250
0.16 Ω
f = 1.0 MHz, see fig. 5
--26
= 14 A, VDS = 80 V,
I
= 10 V
GS
D
see fig. 6 and 13
b
-10-
= 50 V, ID = 14 A
V
DD
= 12 Ω, RD = 3.6 Ω, see fig. 10
G
G
G
TJ = 25 °C, IS = 14 A, VGS = 0 V
b
D
S
D
S
b
-34-
-4.5-
-7.5-
--14
--56
--
-
b
150 280 ns
-
0.85 1.7 µC
2.5 V
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
V
V/°C
µA
S
pFOutput Capacitance C
nC Gate-Source Charge Q
ns
nH
A
www.vishay.com Document Number: 91019
2 S-81240-Rev. A, 16-Jun-08
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
IRF530, SiHF530
Vishay Siliconix
Fig. 1 - Typical Output Characteristics, TC = 25 °C
Fig. 2 - Typical Output Characteristics, T
= 175 °C
C
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91019 www.vishay.com
S-81240-Rev. A, 16-Jun-08 3
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