Vishay IRF530S, SiHF530S Data Sheet

D2PAK (TO-263)

G

D

S

Power MOSFET

IRF530S, SiHF530S

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) 100

()V

R

DS(on)

Q

(Max.) (nC) 26

g

(nC) 5.5

Q

gs

Q

(nC) 11

gd

= 10 V 0.16

GS

Configuration Single

G

N-Channel MOSFET

ORDERING INFORMATION

Package
Lead (Pb)-free and Halogen-free SiHF530S-GE3

Lead (Pb)-free

Note

a. See device orientation.

2

D

PAK (TO-263) D2PAK (TO-263) D2PAK (TO-263)

IRF530SPbF
SiHF530S-E3

FEATURES

• Halogen-free According to IEC 61249-2-21
Definition

• Surface Mount

• Available in Tape and Reel

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

• 175 °C Operating Temperature

•Fast Switching

• Ease of Paralleling

D

S

• Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.

2

The D

PAK (TO-263) is a surface mount power package
capable of accommodating die size up to HEX-4. It provides
the highest power capability and the lowest possible
on-resistance in any existing surface mount package. The

2

D

PAK (TO-263) is suitable for high current applications
because of its low internal connection resistance and can
dissipate up to 2.0 W in a typical surface mount application.

SiHF530STRL-GE3
IRF530STRLPbF
SiHF530STL-E3

a

a

a

SiHF530STRR-GE3
IRF530STRRPbF
SiHF530STR-E3

a

a

a

ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current V

Pulsed Drain Current

a

at 10 V

GS

= 25 °C

T

C

= 100 °C

T

C

V

V

I

IDM

DS

GS

D

Linear Derating Factor 0.59

Linear Derating Factor (PCB Mount)

Single Pulse Avalanche Energy
Avalanche Current

a

Repetitive Avalanche Energy

Maximum Power Dissipation

Maximum Power Dissipation (PCB Mount)
Peak Diode Recovery dV/dt

Operating Junction and Storage Temperature Range

e

b

a

= 25 °C

T

e

c

C

TA = 25 °C

E

AS

I

AR

E

AR

P

D

dV/dt 5.5 V/ns

, T

T

J

stg

Soldering Recommendations (Peak Temperature) for 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V

= 25 V, starting TJ = 25 °C, L = 528 μH, Rg = 25 , IAS = 14 A (see fig. 12).

DD

c. I

 14 A, dI/dt  140 A/μs, VDD  VDS, TJ  175 °C.

SD

d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91020

www.vishay.com

S11-1046-Rev. C, 30-May-11 1

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

100

± 20

14

10

56

0.025

69 mJ

14 A

8.8 mJ

88

3.7

- 55 to + 175

d

300

www.vishay.com/doc?91000

V

A

W/°C

W

°C

IRF530S, SiHF530S

Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient R

Maximum Junction-to-Ambient
(PCB Mount)

a

Maximum Junction-to-Case (Drain) R

thJA

R

thJA

thJC

Note

a. When mounted on 1" square PCB (FR-4 or G-10 material).

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

V

Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA - 0.12 - V/°C

DS

Gate-Source Threshold Voltage V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

Drain-Source On-State Resistance R

Forward Transconductance g

Dynamic

Input Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Gate-Drain Charge Q

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Internal Drain Inductance L

Internal Source Inductance L

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

Pulsed Diode Forward Current

a

Body Diode Voltage V

Body Diode Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

Forward Turn-On Time t

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.

www.vishay.com Document Number: 91020
2 S11-1046-Rev. C, 30-May-11

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

DS

GS(th)

V

GSS

DSS

VGS = 10 V ID = 8.4 A

DS(on)

fs

iss

- 250 -

oss

-60-

rss

g

--5.5

gs

--11

gd

d(on)

r

-23-

d(off)

-24-

f

D

V

V

GS

R

Between lead,
6 mm (0.25") from
package and center of

S

S

I

SM

SD

rr

rr

on

die contact

MOSFET symbol
showing the
integral reverse
p - n junction diode

TJ = 25 °C, IF = 14 A, dI/dt = 100 A/μs

This document is subject to change without notice.

-62

-40

°C/W

-1.7

VGS = 0, ID = 250 μA 100 - - V

VDS = VGS, ID = 250 μA 2.0 - 4.0 V

= ± 20 V - - ± 100 nA

GS

VDS = 100 V, VGS = 0 V - - 25

= 80 V, VGS = 0 V, TJ = 150 °C - - 250

DS

VDS = 50 V, ID = 8.4 A

VGS = 0 V,

V

= 25 V,

DS

f = 1.0 MHz, see fig. 5

b

b

- - 0.16 

5.1 - - S

- 670 -

--26

= 14 A, VDS = 80 V,

I

= 10 V

D

see fig. 6 and 13

b

-10-

V

= 50 V, ID = 14 A,

DD

= 12 , RD = 3.6 , see fig. 10

g

G

G

TJ = 25 °C, IS = 14 A, VGS = 0 V

b

D

S

D

S

b

-34-

-4.5-

-7.5-

--14

--56

--2.5V

- 150 280 ns

b

- 0.85 1.7 μC

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

www.vishay.com/doc?91000

μA

pFOutput Capacitance C

nC Gate-Source Charge Q

ns

nH

A

91020_01

20 µs Pulse Width
T

C

= 25 °C

4.5 V

VDS, Drain-to-Source Voltage (V)

I

D

, Drain Current (A)

Bottom

To p

V

GS

15 V
10 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

4.5 V

10

1

10

0

10

-1

10

0

10

1

V

DS

,

Drain-to-Source Voltage (V)

I

D

, Drain Current (A)

4.5 V

20 µs Pulse Width
T

C

= 175 °C

91020_02

Bottom

To p

V

GS

15 V
10 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

4.5 V

10

1

10

0

10

-1

10

0

10

1

20 µs Pulse Width
V

DS

= 50 V

I

D

, Drain Current (A)

V

GS

,

Gate-to-Source Voltage (V)

5678910

4

25 °C

175 °C

91020_03

10

1

10

0

I

D

= 14 A

V

GS

= 10 V

3.0

0.0

0.5

1.0

1.5

2.0

2.5

- 60- 40 - 20 0 20 40 60 80 100120 140 160

T

J

,

Junction Temperature (°C)

R

DS(on)

, Drain-to-Source On Resistance

(Normalized)

91020_04

3.5

180

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

IRF530S, SiHF530S

Vishay Siliconix

Fig. 1 - Typical Output Characteristics, TC = 25 °C

Fig. 2 - Typical Output Characteristics, T

= 175 °C

C

Fig. 3 - Typical Transfer Characteristics

Fig. 4 - Normalized On-Resistance vs. Temperature

Document Number: 91020 www.vishay.com
S11-1046-Rev. C, 30-May-11 3

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

This document is subject to change without notice.

www.vishay.com/doc?91000