ILD620/ 620GB / ILQ620/ 620GB
E
C
C
E
E
C
C
E
16
15
14
13
12
11
10
9
1
2
3
4
5
6
7
8
i179053
E
C
C
E
1
2
3
4
8
7
6
5
A/C
A/C
A/C
A/C
A/C
A/C
A/C
A/C
A/C
A/C
A/C
A/C
Dual Channel
Quad Channel
Vishay Semiconductors
Optocoupler, Phototransistor Output, AC Input (Dual, Quad
Channel)
Features
• Identical Channel to Channel Footprint
• ILD620 Crosses to TLP620-2
• ILQ620 Crosses to TLP620-4
• High Collector-Emitter Voltage, BV
• Dual and Quad Packages Feature:
- Reduced Board Space
- Lower Pin and Parts Count
- Better Channel to Channel CTR Match
- Improved Common Mode Rejection
• Isolation Test Voltage 5300 V
RMS
• Lead-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
CEO
= 70 V
Agency Approvals
• UL1577, File No. E52744 System Code H or J,
Double Protection
• CSA 93751
• DIN EN 60747-5-2 (VDE0884)
DIN EN 60747-5-5 pending
Available with Option 1
• BSI IEC60950 IEC60065
Description
The ILD620/ ILQ620 and ILD620GB/ ILQ620GB are
multi-channel input phototransistor optocouplers that
use inverse parallel GaAs IRLED emitter and high
gain NPN silicon phototransistors per channel. These
devices are constructed using over/under leadframe
optical coupling and double molded insulation resulting in a withstand test voltage of 5300 V
The LED parameters and the linear CTR characteristics make these devices well suited for AC voltage
detection. the ILD/Q620GB with its low I
CTR
age detection network that is placed in series with the
minimizes power dissipation of the AC volt-
CEsat
LEDs. Eliminating the phototransistor base connection provides added electrical noise immunity from the
transients found in many industrial control environments.
Document Number 83653
Rev. 1.4, 26-Oct-04
.
RMS
quaranteed
F
e3
Order Information
Part Remarks
ILD620 CTR > 50 %, DIP-8
ILD620GB CTR > 100 %, DIP-8
ILQ620 CTR > 50 %, DIP-16
ILQ620GB CTR > 100 %, DIP-16
ILD620-X007 CTR > 50 %, SMD-8 (option 7)
ILD620-X009 CTR > 50 %, SMD-8 (option 9)
ILD620GB-X009 CTR > 100 %, SMD-8 (option 9)
ILQ620-X009 CTR > 50 %, SMD-16 (option 9)
ILQ620GB-X009 CTR > 100 %, SMD-16 (option 9)
For additional information on the available options refer to
Option Information.
www.vishay.com
Pb
Pb-free
1
ILD620/ 620GB / ILQ620/ 620GB
Vishay Semiconductors
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter Test condition Symbol Val ue Unit
Forward current I
Surge current I
Power dissipation P
F
FSM
diss
Derate linearly from 25 °C 1.3 mW/°C
Output
Parameter Test condition Symbol Val ue Unit
Collector-emitter breakdown
voltage
Collector current I
t < 1.0 sec: I
Power dissipation P
Derate from 25 °C 2.0 mW/°C
BV
CEO
C
C
diss
± 60 mA
± 1.5 A
100 mW
70 V
50 mA
100 mA
150 mW
Coupler
Parameter Test condition Par t Symbol Val ue Unit
Isolation test voltage t = 1.0 sec. V
ISO
Package dissipation ILD620 400 mW
ILD620GB 400 mW
Derate from 25 °C 5.33 mW/°C
Package dissipation ILQ620 500 mW
ILQ620GB 500 mW
Derate from 25 °C 6.67 mW/°C
Creepage ≥ 7.0 mm
Clearance ≥ 7.0 mm
Isolation resistance V
= 500 V, T
IO
V
= 500 V, T
IO
Storage temperature T
Operating temperature T
Junction temperature T
Soldering temperature 2.0 mm from case bottom T
= 25 °C R
amb
= 100 °C R
amb
IO
IO
stg
amb
j
sld
5300 V
12
≥ 10
11
≥ 10
RMS
- 55 to + 150 °C
- 55 to + 100 °C
100 °C
260 °C
Ω
Ω
www.vishay.com
2
Document Number 83653
Rev. 1.4, 26-Oct-04
ILD620/ 620GB / ILQ620/ 620GB
Vishay Semiconductors
Electrical Characteristics
T
= 25 °C, unless otherwise specified
amb
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter Test condition Symbol Min Ty p. Max Unit
Forward voltage I
Forward current V
Capacitance V
Thermal resistance, junction to
lead
Output
Parameter Test condition Symbol Min Ty p. Max Unit
Collector-emitter capacitance V
Collector-emitter leakage
current
Thermal resistance, junction to
lead
= ± 10 mA V
F
= ± 0.7 V I
R
= 0 V, f = 1.0 MHz C
F
= 5.0 V, f = 1.0 MHz C
CE
V
= 24 V I
CE
= 85 °C, VCE = 24 V I
T
A
R
R
F
F
O
THJL
CE
CEO
CEO
THJL
1.01.151.3 V
2.5 20 µA
25 pF
750 K/W
6.8 pF
10 100 nA
2.0 50 µA
500 K/W
Coupler
Parameter Test condition Part Symbol Min Ty p. Max Unit
Off-state collector current V
Collector-emitter saturation
voltage
Current Transfer Ratio
Parameter Test condition Part Symbol Min Typ . Max Unit
Channel/Channel CTR match I
CTR symmetry I
Current Transfer Ratio
(collector-emitter saturated)
Current Transfer Ratio
(collector-emitter)
Current Transfer Ratio
(collector-emitter saturated)
Current Transfer Ratio
(collector-emitter)
= ± 0.7 V, VCE = 24 V I
F
I
= ± 8.0 mA, ICE = 2.4 mA ILD620 V
F
ILQ620 V
I
= ± 1.0 mA, ICE = 0.2 mA ILD620GB V
F
ILQ620GB V
= ± 5.0 mA, VCE = 5.0 V CTRX/CTRY 1 to 1 3 to 1
F
= - 5.0 mA)/
CE(IF
I
= + 5.0 mA)
CE(IF
I
= ± 1.0 mA, VCE = 0.4 V ILD620 CTR
F
ILQ620 CTR
I
= ± 5.0 mA, VCE = 5.0 V ILD620 CTR
F
ILQ620 CTR
I
= ± 1.0 mA, VCE = 0.4 V ILD620GB CTR
F
ILQ620GB CTR
I
= ± 5.0 mA, VCE = 5.0 V ILD620GB CTR
F
ILQ620GB CTR
CE(OFF)
CEsat
CEsat
CEsat
CEsat
I
CE(RATIO)
CEsat
CEsat
CE
CE
CEsat
CEsat
CE
CE
1.0 10 µA
0.5 2.0
60 %
60 %
50 80 600 %
50 80 600 %
30 %
30 %
100 200 600 %
100 200 600 %
0.4 V
0.4 V
0.4 V
0.4 V
Document Number 83653
Rev. 1.4, 26-Oct-04
www.vishay.com
3
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