VISHAY ILQ 620 VIS Datasheet

ILD620/ 620GB / ILQ620/ 620GB

E

C

C

E

E

C

C

E

16

15

14

13

12

11

10

9

1

2

3

4

5

6

7

8

i179053

E

C

C

E

1

2

3

4

8

7

6

5

A/C

A/C

A/C

A/C

A/C

A/C

A/C

A/C

A/C

A/C

A/C

A/C

Dual Channel

Quad Channel

Vishay Semiconductors

Optocoupler, Phototransistor Output, AC Input (Dual, Quad
Channel)

Features

• Identical Channel to Channel Footprint

• ILD620 Crosses to TLP620-2

• ILQ620 Crosses to TLP620-4

• High Collector-Emitter Voltage, BV

• Dual and Quad Packages Feature:

- Reduced Board Space

- Lower Pin and Parts Count

- Better Channel to Channel CTR Match

- Improved Common Mode Rejection

• Isolation Test Voltage 5300 V

RMS

• Lead-free component

• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC

CEO

= 70 V

Agency Approvals

• UL1577, File No. E52744 System Code H or J,
Double Protection

• CSA 93751

• DIN EN 60747-5-2 (VDE0884)
DIN EN 60747-5-5 pending
Available with Option 1

• BSI IEC60950 IEC60065

Description

The ILD620/ ILQ620 and ILD620GB/ ILQ620GB are
multi-channel input phototransistor optocouplers that
use inverse parallel GaAs IRLED emitter and high
gain NPN silicon phototransistors per channel. These
devices are constructed using over/under leadframe
optical coupling and double molded insulation result­ing in a withstand test voltage of 5300 V

The LED parameters and the linear CTR characteris­tics make these devices well suited for AC voltage
detection. the ILD/Q620GB with its low I
CTR
age detection network that is placed in series with the

minimizes power dissipation of the AC volt-

CEsat

LEDs. Eliminating the phototransistor base connec­tion provides added electrical noise immunity from the
transients found in many industrial control environ­ments.

Document Number 83653

Rev. 1.4, 26-Oct-04

.

RMS

quaranteed

F

e3

Order Information

Part Remarks

ILD620 CTR > 50 %, DIP-8

ILD620GB CTR > 100 %, DIP-8

ILQ620 CTR > 50 %, DIP-16

ILQ620GB CTR > 100 %, DIP-16

ILD620-X007 CTR > 50 %, SMD-8 (option 7)

ILD620-X009 CTR > 50 %, SMD-8 (option 9)

ILD620GB-X009 CTR > 100 %, SMD-8 (option 9)

ILQ620-X009 CTR > 50 %, SMD-16 (option 9)

ILQ620GB-X009 CTR > 100 %, SMD-16 (option 9)

For additional information on the available options refer to
Option Information.

www.vishay.com

Pb

Pb-free

1

ILD620/ 620GB / ILQ620/ 620GB

Vishay Semiconductors

Absolute Maximum Ratings

T

= 25 °C, unless otherwise specified

amb

Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.

Input

Parameter Test condition Symbol Val ue Unit

Forward current I

Surge current I

Power dissipation P

F

FSM

diss

Derate linearly from 25 °C 1.3 mW/°C

Output

Parameter Test condition Symbol Val ue Unit

Collector-emitter breakdown
voltage

Collector current I

t < 1.0 sec: I

Power dissipation P

Derate from 25 °C 2.0 mW/°C

BV

CEO

C

C

diss

± 60 mA

± 1.5 A

100 mW

70 V

50 mA

100 mA

150 mW

Coupler

Parameter Test condition Par t Symbol Val ue Unit

Isolation test voltage t = 1.0 sec. V

ISO

Package dissipation ILD620 400 mW

ILD620GB 400 mW

Derate from 25 °C 5.33 mW/°C

Package dissipation ILQ620 500 mW

ILQ620GB 500 mW

Derate from 25 °C 6.67 mW/°C

Creepage ≥ 7.0 mm

Clearance ≥ 7.0 mm

Isolation resistance V

= 500 V, T

IO

V

= 500 V, T

IO

Storage temperature T

Operating temperature T

Junction temperature T

Soldering temperature 2.0 mm from case bottom T

= 25 °C R

amb

= 100 °C R

amb

IO

IO

stg

amb

j

sld

5300 V

12

≥ 10

11

≥ 10

RMS

- 55 to + 150 °C

- 55 to + 100 °C

100 °C

260 °C

Ω

Ω

www.vishay.com

2

Document Number 83653

Rev. 1.4, 26-Oct-04

ILD620/ 620GB / ILQ620/ 620GB

Vishay Semiconductors

Electrical Characteristics

T

= 25 °C, unless otherwise specified

amb

Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.

Input

Parameter Test condition Symbol Min Ty p. Max Unit

Forward voltage I

Forward current V

Capacitance V

Thermal resistance, junction to
lead

Output

Parameter Test condition Symbol Min Ty p. Max Unit

Collector-emitter capacitance V

Collector-emitter leakage
current

Thermal resistance, junction to
lead

= ± 10 mA V

F

= ± 0.7 V I

R

= 0 V, f = 1.0 MHz C

F

= 5.0 V, f = 1.0 MHz C

CE

V

= 24 V I

CE

= 85 °C, VCE = 24 V I

T

A

R

R

F

F

O

THJL

CE

CEO

CEO

THJL

1.01.151.3 V

2.5 20 µA

25 pF

750 K/W

6.8 pF

10 100 nA

2.0 50 µA

500 K/W

Coupler

Parameter Test condition Part Symbol Min Ty p. Max Unit

Off-state collector current V

Collector-emitter saturation
voltage

Current Transfer Ratio

Parameter Test condition Part Symbol Min Typ . Max Unit

Channel/Channel CTR match I

CTR symmetry I

Current Transfer Ratio
(collector-emitter saturated)

Current Transfer Ratio
(collector-emitter)

Current Transfer Ratio
(collector-emitter saturated)

Current Transfer Ratio
(collector-emitter)

= ± 0.7 V, VCE = 24 V I

F

I

= ± 8.0 mA, ICE = 2.4 mA ILD620 V

F

ILQ620 V

I

= ± 1.0 mA, ICE = 0.2 mA ILD620GB V

F

ILQ620GB V

= ± 5.0 mA, VCE = 5.0 V CTRX/CTRY 1 to 1 3 to 1

F

= - 5.0 mA)/

CE(IF

I

= + 5.0 mA)

CE(IF

I

= ± 1.0 mA, VCE = 0.4 V ILD620 CTR

F

ILQ620 CTR

I

= ± 5.0 mA, VCE = 5.0 V ILD620 CTR

F

ILQ620 CTR

I

= ± 1.0 mA, VCE = 0.4 V ILD620GB CTR

F

ILQ620GB CTR

I

= ± 5.0 mA, VCE = 5.0 V ILD620GB CTR

F

ILQ620GB CTR

CE(OFF)

CEsat

CEsat

CEsat

CEsat

I

CE(RATIO)

CEsat

CEsat

CE

CE

CEsat

CEsat

CE

CE

1.0 10 µA

0.5 2.0

60 %

60 %

50 80 600 %

50 80 600 %

30 %

30 %

100 200 600 %

100 200 600 %

0.4 V

0.4 V

0.4 V

0.4 V

Document Number 83653

Rev. 1.4, 26-Oct-04

www.vishay.com

3

ILD620/ 620GB / ILQ620/ 620GB

iild620_02

V

O

VCC=5V

RL=1kΩ

F = 10 KHz,
DF = 50%

IF=10mA

Vishay Semiconductors

Switching Characteristics

Non-saturated

Parameter Test condition Symbol Min Ty p. Max Unit

On time I

Rise time I

Off time I

Fall time I

Propagation H-L I

Propagation L-H I

Saturated

Parameter Test condition Symbol Min Ty p. Max Unit

On time I

Rise time I

Off time I

Fall time I

Propagation H-L I

Propagation L-H I

= ± 10 mA, VCC = 5.0 V,

F

= 75 Ω, 50 % of V

R

L

= ± 10 mA, VCC = 5.0 V,

F

= 75 Ω, 50 % of V

R

L

= ± 10 mA, VCC = 5.0 V,

F

= 75 Ω, 50 % of V

R

L

= ± 10 mA, VCC = 5.0 V,

F

= 75 Ω, 50 % of V

R

L

= ± 10 mA, VCC = 5.0 V,

F

= 75 Ω, 50 % of V

R

L

= ± 10 mA, VCC = 5.0 V,

F

= 75 Ω, 50 % of V

R

L

= ± 10 mA, VCC = 5.0 V,

F

= 1.0 KΩ, VTH = 1.5 V

R

L

= ± 10 mA, VCC = 5.0 V,

F

= 1.0 KΩ, VTH = 1.5 V

R

L

= ± 10 mA, VCC = 5.0 V,

F

= 1.0 KΩ, VTH = 1.5 V

R

L

= ± 10 mA, VCC = 5.0 V,

F

R

= 1.0 KΩ, VTH = 1.5 V

L

= ± 10 mA, VCC = 5.0 V,

F

= 1.0 KΩ, VTH = 1.5 V

R

L

= ± 10 mA, VCC = 5.0 V,

F

= 1.0 KΩ, VTH = 1.5 V

R

L

PP

PP

PP

PP

PP

PP

t

t

t

t

t

on

t

t

off

t

PHL

PLH

t

on

t

t

off

t

PHL

PLH

r

f

r

f

3.0 µs

20 µs

2.3 µs

2.0 µs

1.1 µs

2.5 µs

4.3 µs

2.8 µs

2.5 µs

11 µs

2.6 µs

7.2 µs

Typical Characteristics (Tamb = 25 °C unless otherwise specified)

IF=10mA

F = 10 KHz,
DF = 50%

iild620_01

Figure 1. Non-saturated Switching Timing

www.vishay.com

4

VCC=5V

V

O

RL = 75 Ω

Figure 2. Saturated Switching Timing

Document Number 83653

Rev. 1.4, 26-Oct-04

V

iild620_06

100806040200-20

10

10

10

10

10

10

10

10

-2

-1

0

1

2

3

4

5

TA- Ambient Temperature - °C

I

CEO

- Collector-Emitter - nA

Vce=10V

Typical

-60 -40 -20 0 20 40 60 80 100

120

100

80

60

40

0

20

Ta - Ambient Temperature - °C

IF - Maximum LED Current - mA

TJ (MAX) = 100 °C

iild620_07

iild620_08

-60 -40 -20 0 20 40 60 80 100

200

100

0

50

Ta - Ambient Temperature - °C

P

LED

- LED Power - mW

150

iild620_03

ILD620/ 620GB / ILQ620/ 620GB

Vishay Semiconductors

I

F

t

t

PLH

O

t

t

D

R

t

on

PLH

t

S

50%

t

F

t

off

iild620 _04

-20

Figure 3. Non-saturated Switching Timing

I

F

t

D

t

V

O

R

t

PLH

t

PHL

t

S

Figure 4. Saturated Switching Timing

60

40

20

25 °C

0

VTH= 1.5 V

t

F

85 °C

Figure 6. Collector-Emitter Leakage vs. Temperature

Figure 7. Maximum LED Current vs. Ambient Temperature

–55 °C

-40

- LED Forward Current - mA
F

I

-60

-1.5 -1.0 -0.5 0.0 0.5 1.0 1.5

iild620_05

Figure 5. LED Forward Current vs.Forward Voltage

Document Number 83653

Rev. 1.4, 26-Oct-04

VF- LED Forward Voltage - V

Figure 8. Maximum LED Power Dissipation

www.vishay.com

5

ILD620/ 620GB / ILQ620/ 620GB

iild620_12

CTRNF - Normalized CTR Factor

.1 1 10 100

2.0

1.5

1.0

0.5

0.0

IF- LED Current - mA

NCTRce

TA= 100 °C

Normalized to:
VCE=10V,IF= 5 mA,
CTRce(sat) V

CE

= 0.4 V

NCTRce(sat)

iild620_13

10-610-510-410-310-210-110010

1

10000

1000

100

10

t - LED Pulse Duration - s

If(pk) - Peak LED Current - mA

.005

ˇ

DF=/t

τ

.05

.02

.01

.1
.2

.5

Duty Factor

t

τ

iild620_14

-60 -40 -20 0 20 40 60 80 100

0

50

100

150

200

Ta - Ambient Temperature - °C

P

DET

- Detector Power - mW

Vishay Semiconductors

100

50

Normalized to

=10mA

I

- Normalized Collector Current

C

I

iild620_09

F

V

=5V

CE

10

5.0

2.5

1.0

0.5

0.1
1 5 10 20

Forward Current - I

ILD/Q620GB

ILD/Q620

F

mA

Figure 9. Collector Current vs. Diode Forward Current

2.0

Normalized to:
VCE=10V,IF= 5 mA,

1.5

CTRce(sat) V

CE

= 0.4 V

NCTRce

1.0

0.5

NCTRce(sat)

TA=50°C

0.0

CTRNF - Normalized CTR Factor

.1 1 10 100

IF- LED Current - mA

iild620_10

Figure 10. Normalization Factor for Non-saturated and Saturated

2.0

Normalized to:
VCE=10V,IF= 5 mA,

1.5

CTRce(sat) V

1.0

CTR vs. I

= 0.4 V

CE

F

NCTRce

Figure 12. Normalization Factor for Non-saturated and Saturated

CTR vs. I

F

Figure 13. Peak LED Current vs. Pulse Duration, Tau

0.5

0.0

CTRNF - Normalized CTR Factor

.1 1 10 100

IF- LED Current - mA

iild620_11

Figure 11. Normalization Factor for Non-saturated and Saturated

www.vishay.com

6

CTR vs. I

NCTRce(sat)

TA=70°C

Figure 14. Maximum Detector Power Dissipation

F

Document Number 83653

Rev. 1.4, 26-Oct-04

1000

ILD620/ 620GB / ILQ620/ 620GB

Vishay Semiconductors

Figure 15. Maximum Collector Current vs. Collector Voltage

Rth = 500 °C/W

25 °C
50 °C

75 °C
90 °C

- Collector Current - mA

CE

I

iild620_15

100

10

1

.1

.1 10 100

1

VCE- Collector-Emitter Voltage - V

Package Dimensions in Inches (mm)

pin one ID

i178006

.255 (6.48)
.268 (6.81)

.030 (0.76)
.045 (1.14)

4° typ.

.050 (1.27)

.018 (.46)
.022 (.56)

4

3

5

6

.379 (9.63)
.390 (9.91)

1

2

78

.031 (0.79)

.130 (3.30)
.150 (3.81)

.020 (.51 )
.035 (.89 )

.100 (2.54) typ.

ISO Method A

.300 (7.62)

typ.

10°

3°–9°

.008 (.20)
.012 (.30)

.110 (2.79)
.130 (3.30)

.230(5.84)
.250(6.35)

Document Number 83653

Rev. 1.4, 26-Oct-04

www.vishay.com

7

ILD620/ 620GB / ILQ620/ 620GB

Vishay Semiconductors

Package Dimensions in Inches (mm)

pin one ID

87654321

.255 (6.48)
.265 (6.81)

910111213141516

.779 (19.77 )
.790 (20.07)

ISO Method A

4°

.018 (.46)
.022 (.56)

i178007

.030 (.76)
.045 (1.14)

.028 (0.7)

MIN.

.100 (2.54)typ.

Option 7

.300 (7.62)

TYP.

.315 (8.0)

MIN.

.331 (8.4)

MIN.

.406 (10.3)

MAX.

.031(.79)

.180 (4.6)
.160 (4.1)

.020(.51)
.035 (.89)

.050 (1.27)

.0040 (.102)
.0098 (.249)

.130 (3.30)
.150 (3.81)

.300 (7.62)

3°–9°

.008 (.20)
.012 (.30)

Option 9

.375 (9.53)

.395 (10.03)

.300 (7.62)

ref.

.020 (.51)

.040 (1.02)

.315 (8.00)

min.

typ.

10°
typ.

.110 (2.79)
.130 (3.30)

.012 (.30) typ.

15° max.

18494

.230 (5.84)
.250 (6.35)

www.vishay.com

8

Document Number 83653

Rev. 1.4, 26-Oct-04

ILD620/ 620GB / ILQ620/ 620GB

Vishay Semiconductors

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).

The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively

2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.

Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.

We reserve the right to make changes to improve technical design

and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each

customer application by the customer. Should the buyer use Vishay Semiconductors products for any

unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all

claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal

damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Telephone: [phone], Fax number: 49 (0)7131 67 2423

Document Number 83653

Rev. 1.4, 26-Oct-04

www.vishay.com

9

Legal Disclaimer Notice

Vishay

Disclaimer

All product specifications and data are subject to change without notice.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.

Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.

Product names and markings noted herein may be trademarks of their respective owners.

Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1