VISHAY ILD615, ILQ615 Technical data
i179052
1
2
3
4
8
7
6
5
E
C
C
E
A
C
C
A
A
C
C
A
A
C
C
A
E
C
C
E
E
C
C
E
16
15
14
13
12
11
10
9
1
2
3
4
5
6
7
8
Dual Channel
Quad Channel
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VISHAY
ILD615/ ILQ615
Vishay Semiconductors
Optocoupler, Phototransistor Output (Dual, Quad Channel)
Features
• Identical Channel to Channel Footprint
• Dual and Quad Packages Feature:
- Reduced Board Space
- Lower Pin and Parts Count
- Better Channel to Channel CTR Match
- Improved Common Mode Rejection
• Isolation Test Voltage from Double Molded Package, 5300 V
• Lead-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Agency Approvals
• UL1577, File No. E52744 System Code H or J,
Double Protection
• CSA 93751
• BSI IEC60950 IEC60965
• DIN EN 60747-5-2 (VDE0884)
DIN EN 60747-5-5 pending
Available with Option 1
RMS
Description
The ILD615/ ILQ615 are multi-channel phototransistor optocouplers that use GaAs IRLED emitters and
high gain NPN phototransistors. These devices are
constructed using over/under leadframe optical coupling and double molded insulation technology resulting a withstand test voltage of 7500 VAC
working voltage of 1700 V
The binned min./max. and linear CTR characteristics
make these devices well suited for DC or AC voltage
detection. Eliminating the phototransistor base connection provides added electrical noise immunity from
the transients found in many industrial control envi-
RMS
.
ronments.
Because of guaranteed maximum non-saturated and
saturated switching characteristics, the ILD615/
ILQ615 can be used in medium speed data I/O and
control systems. The binned min./max. CTR specification allow easy worst case interface calculations for
Document Number 83652
Rev. 1.3, 19-Apr-04
PEAK
and a
both level detection and switching applications. Interfacing with a CMOS logic is enhanced by the guaranteed CTR at I
= 1.0 mA.
F
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1
ILD615/ ILQ615
Vishay Semiconductors
Order Information
Part Remarks
ILD615-1 CTR 40 - 80 %, Dual Channel, DIP-8
ILD615-2 CTR 63 - 125 %, Dual Channel, DIP-8
ILD615-3 CTR 100 - 200 %, Dual Channel, DIP-8
ILD615-4 CTR 160 - 320 %, Dual Channel, DIP-8
ILQ615-1 CTR 40 - 80 %, Quad Channel, DIP-16
ILQ615-2 CTR 63 - 125 %, Quad Channel, DIP-16
ILQ615-3 CTR 100 - 200 %, Quad Channel, DIP-16
ILQ615-4 CTR 160 - 320 %, Quad Channel, DIP-16
ILD615-1X007 CTR 40 - 80 %, Dual Channel, SMD-8
(option 7)
ILD615-2X006 CTR 63 - 125 %, Dual Channel, DIP-8 400
mil (option 6)
ILD615-2X009 CTR 63 - 125 %, Dual Channel, SMD-8
(option 9)
ILD615-3X006 CTR 100 - 200 %, Dual Channel, DIP-8
400 mil (option 6)
ILD615-3X007 CTR 100 - 200 %, Dual Channel, SMD-8
(option 7)
ILD615-3X009 CTR 100 - 200 %, Dual Channel, SMD-8
(option 9)
ILD615-4X006 CTR 160 - 320 %, Dual Channel, DIP-8
400 mil (option 6)
ILD615-4X009 CTR 160 - 320 %, Dual Channel, SMD-8
(option 9)
ILQ615-1X009 CTR 40 - 80 %, Quad Channel, SMD-16
(option 9)
ILQ615-2X007 CTR 63 - 125 %, Quad Channel, SMD-16
(option 7)
ILQ615-3X006 CTR 100 - 200 %, Quad Channel, DIP-16
400 mil (option 6)
ILQ615-3X009 CTR 100 - 200 %, Quad Channel, SMD-16
(option 9)
ILQ615-4X007 CTR 160 - 320 %, Quad Channel, SMD-16
(option 7)
ILQ615-4X009 CTR 160 - 320 %, Quad Channel, SMD-16
(option 9)
For additional information on the available options refer to
Option Information.
VISHAY
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2
Document Number 83652
Rev. 1.3, 19-Apr-04
VISHAY
ILD615/ ILQ615
Vishay Semiconductors
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter Test condition Symbol Val ue Unit
Reverse voltage V
Forward current I
Surge current I
Power dissipation P
Derate linearly from 25 °C 1.33 mW/°C
R
F
FSM
diss
6.0 V
60 mA
1.5 A
100 mW
Output
Parameter Test condition Symbol Val ue Unit
Collector-emitter breakdown
voltage
Emitter-collector breakdown
voltage
Collector current I
t < 1.0 ms I
Power dissipation P
Derate linearly from 25 °C 2.0 mW/°C
BV
BV
CEO
ECO
C
C
diss
70 V
7.0 V
50 mA
100 mA
150 mW
Coupler
Parameter Test condition Symbol Val ue Unit
Storage temperature T
Operating temperature T
Junction temperature T
Soldering temperature 2.0 mm distance from case
bottom
Package power dissipation,
ILD615
Derate linearly from 25 °C 5.33 mW/°C
Package power dissipation,
ILQ615
Derate linearly from 25 °C 6.67 mW/°C
Isolation test voltage t = 1.0 sec. V
Creepage ≥ 7.0 mm
Clearance ≥ 7.0 mm
Isolation resistance V
= 500 V, T
IO
V
= 500 V, T
IO
= 25 °C R
amb
= 100 °C R
amb
T
stg
amb
j
sld
ISO
IO
IO
- 55 to + 150 °C
- 55 to + 100 °C
100 °C
260 °C
400 mW
500 mW
5300 V
12
≥ 10
11
≥ 10
RMS
Ω
Ω
Document Number 83652
Rev. 1.3, 19-Apr-04
www.vishay.com
3
ILD615/ ILQ615
VISHAY
Vishay Semiconductors
Electrical Characteristics
T
= 25 °C, unless otherwise specified
amb
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter Test condition Symbol Min Typ . Max Unit
Forward voltage I
Breakdown voltage I
Reverse current V
Capacitance V
Thermal resistance, junction to
lead
= 10 mA V
F
= 10 µAV
R
= 6.0 V I
R
= 0 V, f = 1.0 MHz C
R
R
F
BR
R
O
THJL
1.0 1.15 1.3 V
6.0 30 V
0.01 10 µA
25 pF
750 K/W
Output
Parameter Test condition Symbol Min Typ . Max Unit
Collector-emitter capacitance V
Collector-emitter leakage
current, -1, -2
Collector-emitter leakage
current, -3, -4
Collector-emitter breakdown
voltage
Emitter-collector breakdown
voltage
Thermal resistance, junction to
lead
Package transfer characteristics
Channel/Channel CTR match I
= 5.0 V, f = 1.0 MHz C
CE
= 10 V I
V
CE
= 10 V I
V
CE
I
= 0.5 mA BV
CE
I
= 0.1 mA BV
E
R
= 10 mA, VCE = 5.0 V CTRX/
F
CTRY
CE
CEO
CEO
CEO
ECO
THJL
6.8 pF
2.0 50 nA
5.0 100 nA
70 V
7.0 V
500 K/W
1 to 1 2 to 1
Coupler
Parameter Test condition Symbol Min Typ . Max Unit
Capacitance (input-output) V
Insulation resistance V
= 0 V, f = 1.0 MHz C
IO
= 500 V, TA = 25 °C R
IO
IO
S
10
12
0.8 pF
14
10
Channel to channel isolation 500 VAC
Current Transfer Ratio
Parameter Test condition Part Symbol Min Typ. Max Unit
Current Transfer Ratio
(collector-emitter saturated)
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= 10 mA, VCE = 0.4 V ILD615-1
I
F
ILQ615-1
ILD615-2
ILQ615-2
ILD615-3
ILQ615-3
ILD615-4
ILQ615-4
CTR
CTR
CTR
CTR
CEsat
CEsat
CEsat
CEsat
25 %
40 %
60 %
100 %
Document Number 83652
Rev. 1.3, 19-Apr-04
Ω
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