i179012
1
2
3
4
8
7
6
5
E
C
C
E
A
C
C
A
A
C
C
A
A
C
C
A
E
C
C
E
E
C
C
E
16
15
14
13
12
11
10
9
1
2
3
4
5
6
7
8
Dual Channel
Quad Channel
VISHAY
ILD1/ 2/ 5 / ILQ1/ 2/ 5
Vishay Semiconductors
Optocoupler, Phototransistor Output (Dual, Quad Channel)
Features
• Current Transfer Ratio at IF = 10 mA
• Isolation Test Voltage, 5300 V
Agency Approvals
• UL - File No. E52744 system Code H or J
• CSA 93751
• BSI IEC60950 IEC60965
• DIN EN 60747-5-2 (VDE0884)
DIN EN 60747-5-5 pending
Available with Option 1
• FIMKO
Description
The ILD1/ 2/ 5/ ILQ1/ 2/ 5 are optically coupled isolated pairs employing GaAs infrared LEDs and silicon
NPN phototransistor. Signal information, including a
DC level, can be transmitted by the drive while maintaining a high degree of electrical isolation between
input and output. The ILD1/ 2/ 5/ ILQ1/ 2/ 5 are especially designed for driving medium-speed logic and
can be used to eliminate troublesome ground loop
and noise problems. Also these couplers can be used
to replace relays and transformers in many digital
interface applications such as CTR modulation.
The ILD1/ 2/ 5 has two isolated channels in a single
DIP package and the ILQ1/ 2/ 5 has four isolated
channels per package.
Document Number 83646
Rev. 1.3, 10-Jun-04
RMS
Order Information
Part Remarks
ILD1 CTR > 20 %, DIP-8
ILQ1 CTR > 20 %, DIP-16
ILD2 CTR > 100 %, DIP-8
ILQ2 CTR > 100 %, DIP-16
ILD5 CTR > 50 %, DIP-8
ILQ5 CTR > 50 %, DIP-16
ILD1-X007 CTR > 20 %, SMD-8 (option 7)
ILD1-X009 CTR > 20 %, SMD-8 (option 9)
ILD2-X006 CTR > 100 %, DIP-8 400 mil (option 6)
ILD2-X007 CTR > 100 %, SMD-8 (option 7)
ILD2-X009 CTR > 100 %, SMD-8 (option 9)
ILD5-X009 CTR > 50 %, SMD-8 (option 9)
ILQ1-X009 CTR > 20 %, SMD-16 (option 9)
ILQ2-X009 CTR > 100 %, SMD-16 (option 9)
For additional information on the available options refer to
Option Information.
www.vishay.com
1
ILD1/ 2/ 5 / ILQ1/ 2/ 5
VISHAY
Vishay Semiconductors
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter Test condition Symbol Val ue Unit
Reverse voltage V
Forward current I
Surge current I
Power dissipation P
R
F
FSM
diss
6.0 V
60 mA
2.5 A
100 mW
Derate linearly from 25 °C 1.3 mW/°C
Output
Paramet er Test condition Part Symbol Val ue Unit
Collector-emitter reverse voltage ILD1 V
ILQ1 V
ILD2 V
ILQ2 V
ILD5 V
ILQ5 V
Collector current I
t < 1.0 ms I
Power dissipation P
CER
CER
CER
CER
CER
CER
C
C
diss
Derate linearly from 25 °C 2.6 mW/°C
50 V
50 V
70 V
70 V
70 V
70 V
50 mA
400 mA
200 mW
Coupler
Parameter Test condition Symbol Val ue Unit
Isolation test voltage (between
V
ISO
emitter and detector referred to
standard climate 25 °C/ 50 %
RH, DIN 50014)
Creepage ≥ 7.0 mm
Clearance ≥ 7.0 mm
Isolation resistance V
= 500 V, T
IO
= 500 V, T
V
IO
Package power dissipation P
= 25 °C R
amb
= 100 °C R
amb
IO
IO
tot
Derate linearly from 25 °C 3.3 mW/°C
Storage temperature T
Operating temperature T
Junction temperature T
Soldering temperature 2.0 mm from case bottom T
stg
amb
j
sld
5300 V
12
10
11
10
RMS
250 mW
- 40 to + 150 °C
- 40 to + 100 °C
100 °C
260 °C
Ω
Ω
www.vishay.com
2
Document Number 83646
Rev. 1.3, 10-Jun-04
VISHAY
ILD1/ 2/ 5 / ILQ1/ 2/ 5
Vishay Semiconductors
Electrical Characteristics
T
= 25 °C, unless otherwise specified
amb
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter Test condition Symbol Min Ty p. Max Unit
Forward voltage I
Reverse current V
Capacitance V
Thermal resistance, junction to
= 60 mA V
F
= 6.0 V I
R
= 0 V, f = 1.0 MHz C
R
F
R
O
T
thJL
1.25 1.65 V
0.01 10 µA
25 pF
750 K/W
lead
Output
Parameter Test condition Symbol Min Ty p. Max Unit
Collector-emitter capacitance V
Collector-emitter leakage
current
Saturation voltage, collectoremitter
DC forward current gain V
DC forward current gain
saturated
Thermal resistance, junction to
lead
= 5.0 V, f = 1.0 MHz C
CE
= 10 V I
V
VCE
= 1.0 mA, IB = 20 µAV
I
CE
= 10 V, IB = 20 µA HFE 200 650 1800
CE
= 0.4 V, IB = 20 µAHFE
V
CE
CE
CEO
CESAT
sat
R
thjl
120 400 600
6.8 pF
5.0 50 nA
0.25 0.4 V
500 K/W
Coupler
Parameter Test condition Symbol Min Ty p. Max Unit
Capacitance (input-output) V
Current Transfer Ratio
Parameter Test condition Part Symbol Min Ty p. Max Unit
Current Transfer Ratio
(collector-emitter saturated)
Current Transfer Ratio
(collector-emitter)
= 0 V, f = 1.0 MHz C
IO
= 10 mA, VCE = 0.4 V ILD1
I
F
I
= 10 mA, VCE = 10 V ILD1
F
ILQ1
ILD2
ILQ2
ILD5
ILQ5
ILQ1
ILD2
ILQ2
ILD5
ILQ5
IO
CTR
CEsat
CTR
CEsat
CTR
CEsat
CTR
CE
CTR
CE
CTR
CE
0.8 pF
75 %
170 %
100 %
20 80 300 %
100 200 500 %
50 130 400 %
Document Number 83646
Rev. 1.3, 10-Jun-04
www.vishay.com
3
Loading...