VISHAY ILD 621-GB VIS Datasheet

VISHAY

i179054

1

2

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8

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5

E

C

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E

A

C

C

A

A

C

C

A

A

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C

A

E

C

C

E

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C

C

E

16

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Dual Channel

Quad Channel

ILD621/ GB/ ILQ621/ GB

Vishay Semiconductors

Optocoupler, Phototransistor Output (Dual, Quad Channel)

Features

• Alternate Source to TLP621-2/-4 and
TLP621GB-2/-4

• High Collector-Emitter Voltage, BV

• Dual and Quad Packages Feature:

- Lower Pin and Parts Count

- Better Channel to Channel CTR Match

- Improved Common Mode Rejection

• Isolation Test Voltage 5300 V

RMS

Agency Approvals

• UL File # E52744 System Code H or J

• DIN EN 60747-5-2(VDE0884)
DIN EN 60747-5-5 pending
Available with Option 1

• BSI IEC60950 IEC60965

• FIMKO

CEO

=70 V

Description

The ILD621/ ILQ621 and ILD621GB/ ILQ621GB are
multi-channel phototransistor optocouplers that use
GaAs IRLED emitters and high gain NPN silicon pho­totransistors. These devices are constructed using
double molded insulation technology. This assembly
process offers a withstand test voltage of 7500 VDC.
The ILD621/ ILQ621GB is well suited for CMOS inter­facing given the CTR

1.0 mA. High gain linear operation is guaranteed by a

minimum CTR

of 100 % at 5.0 mA. The ILD/Q621

CE

has a guaranteed CTR
The TRansparent IOn Shield insures stable DC gain
in applications such as power supply feedback cir­cuits, where constant DC V

Document Number 83654

Rev. 1.3, 19-Apr-04

of 30 % minimum at I F of

CE sat

50 % minimum at 5.0 mA.

CE

voltages are present.

IO

Order Information

Part Remarks

ILD621 CTR > 50 %, DIP-8

ILD621GB CTR > 100 %, DIP-8

ILQ621 CTR > 50 %, DIP-16

ILQ621GB CTR > 100 %, DIP-16

ILD621-X006 CTR > 50 %, DIP-8 400 mil (option 6)

ILD621-X007 CTR > 50 %, SMD-8 (option 7)

ILD621-X009 CTR > 50 %, SMD-8 (option 9)

ILD621GB-X007 CTR > 100 %, SMD-8 (option 7)

ILQ621-X006 CTR > 50 %, DIP-8 400 mil (option 6)

ILQ621-X007 CTR > 50 %, SMD-16 (option 7)

ILQ621-X009 CTR > 50 %, SMD-16 (option 9)

ILQ621GB-X006 CTR > 100 %, DIP-16 400 mil (option 6)

ILQ621GB-X007 CTR > 100 %, SMD-16 (option 7)

ILQ621GB-X009 CTR > 100 %, SMD-16 (option 9)

For additional information on the available options refer to
Option Information.

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1

ILD621/ GB/ ILQ621/ GB

VISHAY

Vishay Semiconductors

Absolute Maximum Ratings

T

= 25 °C, unless otherwise specified

amb

Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.

Input

Parameter Test condition Symbol Val ue Unit

Reverse voltage V

Forward current I

Surge current I

Power dissipation P

Derate from 25 °C 1.33 mW/°C

R

F

FSM

diss

6.0 V

60 mA mA

1.5 A

100 mW

Output

Parameter Test condition Symbol Val ue Unit

Collector -emitter reverse
voltage

Collector current I

t < 1.0 ms I

Power dissipation P

Derate from 25 °C - 2.0 mW/°C

V

ECO

C

C

diss

70 V

50 mA

100 mA

150 mW

Coupler

Parameter Test condition Par t Symbol Val ue Unit

Isolation test voltage t = 1.0 sec. V

Package dissipation ILD621 400 mW

ILD621GB 400 mW

Derate from 25 °C 5.33 mW/°C

Package dissipation ILQ621 500 mW

ILQ621GB 500 mW

Derate from 25 °C 6.67 mW/°C

Creepage ≥ 7.0 mm

Clearance ≥ 7.0 mm

Isolation resistance V

Storage temperature T

Operating temperature T

Junction temperature T

Soldering temperature 2.0 mm from case bottom T

= 500 V, T

IO

= 500 V, T

V

IO

= 25 °C R

amb

= 100 °C R

amb

ISO

IO

IO

stg

amb

j

sld

5300 V

12

≥ 10

11

≥ 10

- 55 to +150 °C

- 55 to +100 °C

100 °C

260 °C

RMS

Ω

Ω

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2

Document Number 83654

Rev. 1.3, 19-Apr-04

VISHAY

ILD621/ GB/ ILQ621/ GB

Vishay Semiconductors

Electrical Characteristics

T

= 25 °C, unless otherwise specified

amb

Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.

Input

Parameter Test condition Symbol Min Typ . Max Unit

Forward voltage I

Reverse current V

Capacitance V

Thermal resistance, Junction to

= 10 mA V

F

= 6.0 V I

R

= 0, f = 1.0 MHz C

F

R

F

R

O

THJL

1.0 1.15 1.3 V

0.01 10 µA

40 pF

750 K/W

lead

Output

Parameter Test condition Symbol Min Ty p. Max Unit

Collector-emitter capacitance V

Collector-emitter leakage
current

Thermal resistance, Junction to
lead

= 5.0 V, f = 1.0 MHz C

CE

= 24 V I

V

CE

R

CEO

I

CEO

THJL

CE

6.8 pF

10 100 nA

20 50 µA

500 K/W

Coupler

Parameter Test condition Part Symbol Min Ty p. Max Unit

Capacitance (input-output) V

Insulation resistance V

= 0 V, f = 1.0 MHz C

IO

= 500 V

IO

IO

0.8 pF

12

10

Channel to channel insulation 500 VAC

Collector-emitter saturation
voltage

= 8.0 mA, ICE = 2.4 mA ILD621

I

F

I

= 1.0 mA, ICE = 0.2 mA ILD621GB

F

ILQ621

V

V

CEsat

CEsat

0.4 V

0.4 V

ILQ621GB

Current Transfer Ratio

Parameter Test condition Part Symbol Min Ty p. Max Unit

Channel/Channel CTR match I

Current Transfer Ratio
(collector-emitter saturated)

Current Transfer Ratio
(collector-emitter)

= 5.0 mA, VCE = 5.0 V CTRX/

F

CTRY

I

= 1.0 mA, VCE = 0.4 V ILD621

F

CTR

ILQ621

ILD621GB

CTR

ILQ621GB

I

= 5.0 mA, VCE = 5.0 V ILD621

F

ILQ621

ILD621GB

CTR

CTR

ILQ621GB

at

at

1 to 1 3 to 1

CEs

CEs

30 %

50 80 600 %

CE

100 200 600 %

CE

60 %

Ω

Document Number 83654

Rev. 1.3, 19-Apr-04

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3

ILD621/ GB/ ILQ621/ GB

Vishay Semiconductors

Switching Characteristics

Non-saturated switching timing

Parameter Test condition Symbol Min Ty p . Max Unit

On Time I

Rise time I

Off time I

Fall tim e I

Propagation H-L I

Propagation L-H I

Saturated switching timing

Parameter Test condition Symbol Min Ty p . Max Unit

On time I

Rise time I

Off time I

Fall tim e I

Propagation H-L I

Propagation L-H I

= ± 10 mA, VCC = 5.0 V,

F

= 75 Ω, 50 % of V

R

L

= ± 10 mA, VCC = 5.0 V,

F

R

= 75 Ω, 50 % of V

L

= ± 10 mA, VCC = 5.0 V,

F

= 75 Ω, 50 % of V

R

L

= ± 10 mA, VCC = 5.0 V,

F

= 75 Ω, 50 % of V

R

L

= ± 10 mA, VCC = 5.0 V,

F

R

= 75 Ω, 50 % of V

L

= ± 10 mA, VCC = 5.0 V,

F

R

= 75 Ω, 50 % of V

L

= ± 10 mA, VCC = 5.0 V,

F

= 1.0 KΩ, VTH = 1.5 V

R

L

= ± 10 mA, VCC = 5.0 V,

F

R

= 1.0 KΩ, VTH = 1.5 V

L

= ± 10 mA, VCC = 5.0 V,

F

R

= 1.0 KΩ, VTH = 1.5 V

L

= ± 10 mA, VCC = 5.0 V,

F

R

= 1.0 KΩ, VTH = 1.5 V

L

= ± 10 mA, VCC = 5.0 V,

F

= 1.0 KΩ, VTH = 1.5 V

R

L

= ± 10 mA, VCC = 5.0 V,

F

= 1.0 KΩ, VTH = 1.5 V

R

L

PP

PP

PP

PP

PP

PP

t

t

t

t

t

on

t

t

off

t

PHL

PLH

t

on

t

t

off

t

PHL

PLH

VISHAY

3.0 µs

r

f

r

f

2.0 µs

2.3 µs

2.0 µs

1.1 µs

2.5 µs

4.3 µs

2.8 µs

2.5 µs

11 µs

2.6 µs

7.2 µs

Common Mode Transient Immunity

Parameter Test condition Symbol Min Ty p . Max Unit

Common mode rejection output
high

Common mode rejection output
low

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4

= 50 V

V

CM

I

= 0 mA

F

V

= 50 V

CM

I

= 10 mA

F

, RL = 1.0 KΩ,

P-P

, RL = 1.0 KΩ,

P-P

CM

CM

H

L

5000 V/µs

5000 V/µs

Document Number 83654

Rev. 1.3, 19-Apr-04