VISHAY ILD 621-GB VIS Datasheet

VISHAY

i179054

1

2

3

4

8

7

6

5

E

C

E

A

C

A

C

A

C

A

E

C

E

C

E

16

15

14

13

12

11

10

9

1

2

3

4

5

6

7

8

Dual Channel

Quad Channel

ILD621/ GB/ ILQ621/ GB

Vishay Semiconductors

Optocoupler, Phototransistor Output (Dual, Quad Channel)

Features

• Alternate Source to TLP621-2/-4 and TLP621GB-2/-4

• High Collector-Emitter Voltage, BV

• Dual and Quad Packages Feature:

- Lower Pin and Parts Count

- Better Channel to Channel CTR Match

- Improved Common Mode Rejection

• Isolation Test Voltage 5300 V

RMS

Agency Approvals

• UL File # E52744 System Code H or J

• DIN EN 60747-5-2(VDE0884) DIN EN 60747-5-5 pending Available with Option 1

• BSI IEC60950 IEC60965

• FIMKO

CEO

=70 V

Description

The ILD621/ ILQ621 and ILD621GB/ ILQ621GB are multi-channel phototransistor optocouplers that use GaAs IRLED emitters and high gain NPN silicon phototransistors. These devices are constructed using double molded insulation technology. This assembly process offers a withstand test voltage of 7500 VDC. The ILD621/ ILQ621GB is well suited for CMOS interfacing given the CTR

1.0 mA. High gain linear operation is guaranteed by a

minimum CTR

of 100 % at 5.0 mA. The ILD/Q621

CE

has a guaranteed CTR The TRansparent IOn Shield insures stable DC gain in applications such as power supply feedback circuits, where constant DC V

Document Number 83654

Rev. 1.3, 19-Apr-04

of 30 % minimum at I F of

CE sat

50 % minimum at 5.0 mA.

CE

voltages are present.

IO

Order Information

Part Remarks

ILD621 CTR > 50 %, DIP-8

ILD621GB CTR > 100 %, DIP-8

ILQ621 CTR > 50 %, DIP-16

ILQ621GB CTR > 100 %, DIP-16

ILD621-X006 CTR > 50 %, DIP-8 400 mil (option 6)

ILD621-X007 CTR > 50 %, SMD-8 (option 7)

ILD621-X009 CTR > 50 %, SMD-8 (option 9)

ILD621GB-X007 CTR > 100 %, SMD-8 (option 7)

ILQ621-X006 CTR > 50 %, DIP-8 400 mil (option 6)

ILQ621-X007 CTR > 50 %, SMD-16 (option 7)

ILQ621-X009 CTR > 50 %, SMD-16 (option 9)

ILQ621GB-X006 CTR > 100 %, DIP-16 400 mil (option 6)

ILQ621GB-X007 CTR > 100 %, SMD-16 (option 7)

ILQ621GB-X009 CTR > 100 %, SMD-16 (option 9)

For additional information on the available options refer to Option Information.

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1

ILD621/ GB/ ILQ621/ GB

VISHAY

Vishay Semiconductors

Absolute Maximum Ratings

T

= 25 °C, unless otherwise specified

amb

Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability.

Input

Parameter Test condition Symbol Val ue Unit

Reverse voltage V

Forward current I

Surge current I

Power dissipation P

Derate from 25 °C 1.33 mW/°C

R

F

FSM

diss

6.0 V

60 mA mA

1.5 A

100 mW

Output

Parameter Test condition Symbol Val ue Unit

Collector -emitter reverse voltage

Collector current I

t < 1.0 ms I

Power dissipation P

Derate from 25 °C - 2.0 mW/°C

V

ECO

C

diss

70 V

50 mA

100 mA

150 mW

Coupler

Parameter Test condition Par t Symbol Val ue Unit

Isolation test voltage t = 1.0 sec. V

Package dissipation ILD621 400 mW

ILD621GB 400 mW

Derate from 25 °C 5.33 mW/°C

Package dissipation ILQ621 500 mW

ILQ621GB 500 mW

Derate from 25 °C 6.67 mW/°C

Creepage ≥ 7.0 mm

Clearance ≥ 7.0 mm

Isolation resistance V

Storage temperature T

Operating temperature T

Junction temperature T

Soldering temperature 2.0 mm from case bottom T

= 500 V, T

IO

= 500 V, T

V

IO

= 25 °C R

amb

= 100 °C R

amb

ISO

IO

stg

amb

j

sld

5300 V

12

≥ 10

11

≥ 10

- 55 to +150 °C

- 55 to +100 °C

100 °C

260 °C

RMS

Ω

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2

Document Number 83654

Rev. 1.3, 19-Apr-04

VISHAY

ILD621/ GB/ ILQ621/ GB

Vishay Semiconductors

Electrical Characteristics

T

= 25 °C, unless otherwise specified

amb

Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements.

Input

Parameter Test condition Symbol Min Typ . Max Unit

Forward voltage I

Reverse current V

Capacitance V

Thermal resistance, Junction to

= 10 mA V

F

= 6.0 V I

R

= 0, f = 1.0 MHz C

F

R

F

R

O

THJL

1.0 1.15 1.3 V

0.01 10 µA

40 pF

750 K/W

lead

Output

Parameter Test condition Symbol Min Ty p. Max Unit

Collector-emitter capacitance V

Collector-emitter leakage current

Thermal resistance, Junction to lead

= 5.0 V, f = 1.0 MHz C

CE

= 24 V I

V

CE

R

CEO

I

CEO

THJL

CE

6.8 pF

10 100 nA

20 50 µA

500 K/W

Coupler

Parameter Test condition Part Symbol Min Ty p. Max Unit

Capacitance (input-output) V

Insulation resistance V

= 0 V, f = 1.0 MHz C

IO

= 500 V

IO

0.8 pF

12

10

Channel to channel insulation 500 VAC

Collector-emitter saturation voltage

= 8.0 mA, ICE = 2.4 mA ILD621

I

F

I

= 1.0 mA, ICE = 0.2 mA ILD621GB

F

ILQ621

V

CEsat

0.4 V

ILQ621GB

Current Transfer Ratio

Parameter Test condition Part Symbol Min Ty p. Max Unit

Channel/Channel CTR match I

Current Transfer Ratio (collector-emitter saturated)

Current Transfer Ratio (collector-emitter)

= 5.0 mA, VCE = 5.0 V CTRX/

F

CTRY

I

= 1.0 mA, VCE = 0.4 V ILD621

F

CTR

ILQ621

ILD621GB

CTR

ILQ621GB

I

= 5.0 mA, VCE = 5.0 V ILD621

F

ILQ621

ILD621GB

CTR

ILQ621GB

at

1 to 1 3 to 1

CEs

30 %

50 80 600 %

CE

100 200 600 %

CE

60 %

Ω

Document Number 83654

Rev. 1.3, 19-Apr-04

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3

ILD621/ GB/ ILQ621/ GB

Vishay Semiconductors

Switching Characteristics

Non-saturated switching timing

Parameter Test condition Symbol Min Ty p . Max Unit

On Time I

Rise time I

Off time I

Fall tim e I

Propagation H-L I

Propagation L-H I

Saturated switching timing

Parameter Test condition Symbol Min Ty p . Max Unit

On time I

Rise time I

Off time I

Fall tim e I

Propagation H-L I

Propagation L-H I

= ± 10 mA, VCC = 5.0 V,

F

= 75 Ω, 50 % of V

R

L

= ± 10 mA, VCC = 5.0 V,

F

R

= 75 Ω, 50 % of V

L

= ± 10 mA, VCC = 5.0 V,

F

= 75 Ω, 50 % of V

R

L

= ± 10 mA, VCC = 5.0 V,

F

= 75 Ω, 50 % of V

R

L

= ± 10 mA, VCC = 5.0 V,

F

R

= 75 Ω, 50 % of V

L

= ± 10 mA, VCC = 5.0 V,

F

R

= 75 Ω, 50 % of V

L

= ± 10 mA, VCC = 5.0 V,

F

= 1.0 KΩ, VTH = 1.5 V

R

L

= ± 10 mA, VCC = 5.0 V,

F

R

= 1.0 KΩ, VTH = 1.5 V

L

= ± 10 mA, VCC = 5.0 V,

F

R

= 1.0 KΩ, VTH = 1.5 V

L

= ± 10 mA, VCC = 5.0 V,

F

R

= 1.0 KΩ, VTH = 1.5 V

L

= ± 10 mA, VCC = 5.0 V,

F

= 1.0 KΩ, VTH = 1.5 V

R

L

= ± 10 mA, VCC = 5.0 V,

F

= 1.0 KΩ, VTH = 1.5 V

R

L

PP

t

on

t

off

t

PHL

PLH

t

on

t

off

t

PHL

PLH

VISHAY

3.0 µs

r

f

r

f

2.0 µs

2.3 µs

2.0 µs

1.1 µs

2.5 µs

4.3 µs

2.8 µs

2.5 µs

11 µs

2.6 µs

7.2 µs

Common Mode Transient Immunity

Parameter Test condition Symbol Min Ty p . Max Unit

Common mode rejection output high

Common mode rejection output low

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4

= 50 V

V

CM

I

= 0 mA

F

V

= 50 V

CM

I

= 10 mA

F

, RL = 1.0 KΩ,

P-P

, RL = 1.0 KΩ,

P-P

CM

H

L

5000 V/µs

Document Number 83654

Rev. 1.3, 19-Apr-04

VISHAY

iild621_04

V

O

VCC=5V

R

L

F=10KHz, DF=50%

-60 -40 -20 0 20 40 60 80 100

120

100

80

60

40

0

20

TA- Ambient Temperature - °C

I

F

- Maximum LED Current - mA

TJ (MAX) = 100 °C

iild621_05

iild621_06

-60 -40 -20 0 20 40 60 80 100

200

100

0

50

Ta - Ambient Temperature - °C

P

LED

- LED Power - mW

150

ILD621/ GB/ ILQ621/ GB

Vishay Semiconductors

Typical Characteristics (T

I

F

t

V

iild621_01

PLH

O

t

D

R

Fig. 1 Non-saturated Switching Timing

PLH

t

S

VCC=5V

= 25 °C unless otherwise specified)

amb

50%

t

F

Fig. 4 Saturated Switching Timing

IF=10mA

F = 10 KHz,

RL = 75 Ω

DF = 50%

iild621_02

Fig. 2 Non-saturated Switching Timing

I

F

t

D

t

R

t

PLH

t

PHL

t

S

iild621_03

V

O

V

O

VTH= 1.5 V

t

F

Fig. 5 Maximum LED Current vs. Ambient Temperature

Fig. 3 Saturated Switching Timing

Document Number 83654

Rev. 1.3, 19-Apr-04

Fig. 6 Maximum LED Power Dissipation

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5

ILD621/ GB/ ILQ621/ GB

iild621_10

RL- Collector Load Resistor - kΩ

100101.1

1

10

100

1000

1.0

1.5

2.0

2.5

t

PLH

t

PLH

- Propagation Low-High µs

t

PHL

- Propagation High-Low µs

IF=10mA V

CC

=5V,Vth=1.5V

t

PHL

iild621_11

-60 -40 -20 0 20 40 60 80 100

0

50

100

150

200

TA- Ambient Temperature - °C

P

DET

- Detector Power - mW

iild621_12

.1

10

100

1000

100

10

1

.1

VCE- Collector-Emitter Voltage - V

I

CE

- Collector Current - mA

Rth = 500 °C/W

25 °C 50 °C

75 °C 90 °C

1

Vishay Semiconductors

1.4

3

- Forward Voltage - V F

V

iild621_07

1.

1.2

1.1

1.0

0.9

0.8

0.7

TA=85°C

TA= 85° C

100101.1

IF- Forward Current - mA

VISHAY

Fig. 7 Forward Voltage vs. Forward Current

35

30

25

50°C

20

15

10

- Collector Current - mA

5

CE

I

25°C

85°C

70°C

0

iild621_08

40

IF- LED Current - mA

60503020100

Fig. 8 Collector-Emitter Current vs. Temperature and LED

Current

5

10

4

10

3

10

2

- Collector-Emitter - nA

CEO

I

10

1

0

Typical

-1

-2

VCE=10V

100806040200-20

TA- Ambient Temperature - °C

iild621_09

Fig. 10 Propagation Delay vs. Collector Load Resistor

Fig. 11 Maximum Detector Power Dissipation

Fig. 9 Collector-Emitter Leakage vs. Temperature

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6

Document Number 83654

Fig. 12 Maximum Collector Current vs. Collector Voltage

Rev. 1.3, 19-Apr-04

VISHAY

2.0

1.5

1.0

Normalized to: V

=10V,IF= 5 mA,

CE

CTRce(sat) VCE= 0.4 V

NCTRce

ILD621/ GB/ ILQ621/ GB

Vishay Semiconductors

NCTRce(sat)

TA=50°C

CTRNF - Normalized CTR Factor

iild621_13

0.5

0.0 .1 1 10 100

IF- LED Current - mA

Fig. 13 Normalization Factor for Non-saturated and Saturated CTR

vs. I

F

2.0

Normalized to: VCE=10V,IF= 5 mA,

1.5

CTRNF - Normalized CTR Factor

iild621_14

CTRce(sat) V

1.0

0.5

0.0 .1 1 10 100

= 0.4 V

CE

NCTRce

NCTRce(sat)

IF- LED Current - mA

TA=70°C

Fig. 14 Normalization Factor for Non-saturated and Saturated CTR

vs. I

F

2.0

Normalized to: VCE=10V,IF= 5 mA,

1.5

CTRNF - Normalized CTR Factor

iild621_15

CTRce(sat) V

1.0

0.5

0.0 .1 1 10 100

= 0.4 V

CE

NCTRce

NCTRce(sat)

IF- LED Current - mA

TA= 100 °C

Fig. 15 Normalization Factor for Non-saturated and Saturated CTR

vs. I

F

Document Number 83654

Rev. 1.3, 19-Apr-04

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7

ILD621/ GB/ ILQ621/ GB

Vishay Semiconductors

Package Dimensions in Inches (mm)

pin one ID

VISHAY

4

3

1

2

.255 (6.48) .268 (6.81)

5

6

78

.379 (9.63)

.390 (9.91) .030 (0.76) .045 (1.14)

.031 (0.79)

4° typ.

.130 (3.30) .150 (3.81)

.050 (1.27)

.020 (.51 )

i178006

.018 (.46) .022 (.56)

.100 (2.54) typ.

.035 (.89 )

Package Dimensions in Inches (mm)

87654321

910111213141516

pin one ID

.255 (6.48) .265 (6.81)

ISO Method A

.300 (7.62)

typ.

10°

3°–9° .008 (.20)

.012 (.30)

.110 (2.79) .130 (3.30)

ISO Method A

.230(5.84) .250(6.35)

4°

.018 (.46) .022 (.56)

i178007

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8

.030 (.76) .045 (1.14)

.100 (2.54)typ.

.779 (19.77 ) .790 (20.07)

.031(.79)

.130 (3.30) .150 (3.81)

.020(.51) .035 (.89)

.050 (1.27)

.300 (7.62)

typ.

10° typ.

3°–9°

.008 (.20) .012 (.30)

.110 (2.79) .130 (3.30)

.230 (5.84) .250 (6.35)

Document Number 83654

Rev. 1.3, 19-Apr-04

VISHAY

ILD621/ GB/ ILQ621/ GB

Vishay Semiconductors

Option 6

.407 (10.36)

.391 (9.96)

.307 (7.8) .291 (7.4)

.014 (0.35)

.010 (0.25) .400 (10.16) .430 (10.92)

.028 (0.7)

MIN.

Option 7

.300 (7.62)

TYP.

.315 (8.0)

MIN.

.331 (8.4)

MIN.

.406 (10.3)

MAX.

.180 (4.6) .160 (4.1)

.0040 (.102) .0098 (.249)

Option 9

.375 (9.53)

.395 (10.03)

.300 (7.62)

ref.

.020 (.51)

.040 (1.02)

.315 (8.00)

min.

.012 (.30) typ.

15° max.

18450

Document Number 83654

Rev. 1.3, 19-Apr-04

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9

ILD621/ GB/ ILQ621/ GB

VISHAY

Vishay Semiconductors

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs).

The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively

2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.

Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.

We reserve the right to make changes to improve technical design

and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each

customer application by the customer. Should the buyer use Vishay Semiconductors products for any

unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all

claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal

damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423

www.vishay.com

10

Document Number 83654

Rev. 1.3, 19-Apr-04

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