VISHAY ILD 2 VIS Datasheet

i179012

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8

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5

E

C

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E

A

C

C

A

A

C

C

A

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C

A

E

C

C

E

E

C

C

E

16

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Dual Channel

Quad Channel

VISHAY

ILD1/ 2/ 5 / ILQ1/ 2/ 5

Vishay Semiconductors

Optocoupler, Phototransistor Output (Dual, Quad Channel)

Features

• Current Transfer Ratio at IF = 10 mA

• Isolation Test Voltage, 5300 V

Agency Approvals

• UL - File No. E52744 system Code H or J

• CSA 93751

• BSI IEC60950 IEC60965

• DIN EN 60747-5-2 (VDE0884)
DIN EN 60747-5-5 pending
Available with Option 1

• FIMKO

Description

The ILD1/ 2/ 5/ ILQ1/ 2/ 5 are optically coupled iso­lated pairs employing GaAs infrared LEDs and silicon
NPN phototransistor. Signal information, including a
DC level, can be transmitted by the drive while main­taining a high degree of electrical isolation between
input and output. The ILD1/ 2/ 5/ ILQ1/ 2/ 5 are espe­cially designed for driving medium-speed logic and
can be used to eliminate troublesome ground loop
and noise problems. Also these couplers can be used
to replace relays and transformers in many digital
interface applications such as CTR modulation.

The ILD1/ 2/ 5 has two isolated channels in a single
DIP package and the ILQ1/ 2/ 5 has four isolated
channels per package.

Document Number 83646

Rev. 1.3, 10-Jun-04

RMS

Order Information

Part Remarks

ILD1 CTR > 20 %, DIP-8

ILQ1 CTR > 20 %, DIP-16

ILD2 CTR > 100 %, DIP-8

ILQ2 CTR > 100 %, DIP-16

ILD5 CTR > 50 %, DIP-8

ILQ5 CTR > 50 %, DIP-16

ILD1-X007 CTR > 20 %, SMD-8 (option 7)

ILD1-X009 CTR > 20 %, SMD-8 (option 9)

ILD2-X006 CTR > 100 %, DIP-8 400 mil (option 6)

ILD2-X007 CTR > 100 %, SMD-8 (option 7)

ILD2-X009 CTR > 100 %, SMD-8 (option 9)

ILD5-X009 CTR > 50 %, SMD-8 (option 9)

ILQ1-X009 CTR > 20 %, SMD-16 (option 9)

ILQ2-X009 CTR > 100 %, SMD-16 (option 9)

For additional information on the available options refer to
Option Information.

www.vishay.com

1

ILD1/ 2/ 5 / ILQ1/ 2/ 5

VISHAY

Vishay Semiconductors

Absolute Maximum Ratings

T

= 25 °C, unless otherwise specified

amb

Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.

Input

Parameter Test condition Symbol Val ue Unit

Reverse voltage V

Forward current I

Surge current I

Power dissipation P

R

F

FSM

diss

6.0 V

60 mA

2.5 A

100 mW

Derate linearly from 25 °C 1.3 mW/°C

Output

Paramet er Test condition Part Symbol Val ue Unit

Collector-emitter reverse voltage ILD1 V

ILQ1 V

ILD2 V

ILQ2 V

ILD5 V

ILQ5 V

Collector current I

t < 1.0 ms I

Power dissipation P

CER

CER

CER

CER

CER

CER

C

C

diss

Derate linearly from 25 °C 2.6 mW/°C

50 V

50 V

70 V

70 V

70 V

70 V

50 mA

400 mA

200 mW

Coupler

Parameter Test condition Symbol Val ue Unit

Isolation test voltage (between

V

ISO

emitter and detector referred to
standard climate 25 °C/ 50 %
RH, DIN 50014)

Creepage ≥ 7.0 mm

Clearance ≥ 7.0 mm

Isolation resistance V

= 500 V, T

IO

= 500 V, T

V

IO

Package power dissipation P

= 25 °C R

amb

= 100 °C R

amb

IO

IO

tot

Derate linearly from 25 °C 3.3 mW/°C

Storage temperature T

Operating temperature T

Junction temperature T

Soldering temperature 2.0 mm from case bottom T

stg

amb

j

sld

5300 V

12

10

11

10

RMS

250 mW

- 40 to + 150 °C

- 40 to + 100 °C

100 °C

260 °C

Ω

Ω

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2

Document Number 83646

Rev. 1.3, 10-Jun-04

VISHAY

ILD1/ 2/ 5 / ILQ1/ 2/ 5

Vishay Semiconductors

Electrical Characteristics

T

= 25 °C, unless otherwise specified

amb

Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.

Input

Parameter Test condition Symbol Min Ty p. Max Unit

Forward voltage I

Reverse current V

Capacitance V

Thermal resistance, junction to

= 60 mA V

F

= 6.0 V I

R

= 0 V, f = 1.0 MHz C

R

F

R

O

T

thJL

1.25 1.65 V

0.01 10 µA

25 pF

750 K/W

lead

Output

Parameter Test condition Symbol Min Ty p. Max Unit

Collector-emitter capacitance V

Collector-emitter leakage
current

Saturation voltage, collector­emitter

DC forward current gain V

DC forward current gain
saturated

Thermal resistance, junction to
lead

= 5.0 V, f = 1.0 MHz C

CE

= 10 V I

V

VCE

= 1.0 mA, IB = 20 µAV

I

CE

= 10 V, IB = 20 µA HFE 200 650 1800

CE

= 0.4 V, IB = 20 µAHFE

V

CE

CE

CEO

CESAT

sat

R

thjl

120 400 600

6.8 pF

5.0 50 nA

0.25 0.4 V

500 K/W

Coupler

Parameter Test condition Symbol Min Ty p. Max Unit

Capacitance (input-output) V

Current Transfer Ratio

Parameter Test condition Part Symbol Min Ty p. Max Unit

Current Transfer Ratio
(collector-emitter saturated)

Current Transfer Ratio
(collector-emitter)

= 0 V, f = 1.0 MHz C

IO

= 10 mA, VCE = 0.4 V ILD1

I

F

I

= 10 mA, VCE = 10 V ILD1

F

ILQ1

ILD2
ILQ2

ILD5
ILQ5

ILQ1

ILD2
ILQ2

ILD5
ILQ5

IO

CTR

CEsat

CTR

CEsat

CTR

CEsat

CTR

CE

CTR

CE

CTR

CE

0.8 pF

75 %

170 %

100 %

20 80 300 %

100 200 500 %

50 130 400 %

Document Number 83646

Rev. 1.3, 10-Jun-04

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3

ILD1/ 2/ 5 / ILQ1/ 2/ 5

Vishay Semiconductors

Switching Non-saturated

Parameter Current Delay Rise time Storage Fall time Propagation

Test condition VCE = 5.0 V, RL = 75 Ω, 50 % of V

Symbol I

F

t

D

t

r

t

S

PP

t

f

Unit mA µs µs µs µs µs µs

ILD1

20 0.8 1.9 0.2 1.4 0.7 1.4

ILQ1

ILD2

5.0 1.7 2.6 0.4 2.2 1.2 2.3

ILQ2

ILD5

10 1.7 2.6 0.4 2.2 1.1 2.5

ILQ5

Switching Saturated

Parameter Current Delay Rise time Storage Fall time Propagation

Test condition VCE = 0.4 V, RL = 1.0 kΩ, VCC = 5.0 V, VTH = 1.5 V

Symbol I

F

Unit mA µs µs µs µs µs µs

ILD1

20 0.8 1.2 7.4 7.6 1.6 8.6

ILQ1

ILD2

5.0 1.0 2.0 5.4 13.5 5.4 7.4

ILQ2

ILD5

10 1.7 7.0 4.6 20 2.6 7.2

ILQ5

t

D

t

r

t

S

t

f

H-L

t

PHL

H-L

t

PHL

VISHAY

Propagation

L-H

t

PLH

Propagation

L-H

t

PLH

Common Mode Transient Immunity

Parameter Test condition Symbol Min Ty p . Max Unit

Common mode rejection,
output high

Common mode rejection,
output low

Common mode coupling
capacitance

= 50 V

V

CM

I

= 0 mA

F

V

= 50 V

CM

I

= 10 mA

F

, RL = 1.0 kΩ,

P-P

, RL = 1.0 kΩ,

P-P

CM

CM

C

CM

H

L

5000 V/µs

5000 V/µs

0.01 pF

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4

Document Number 83646

Rev. 1.3, 10-Jun-04

VISHAY

iild1_03

V

O

VCC=5 V

R

L

F=10 KHz,
DF=50%

IF=10 mA

iild1_04

I

F

t

R

=1.5 V

V

O

t

D

t

S

t

F

t

PHL

t

PLH

V

TH

ILD1/ 2/ 5 / ILQ1/ 2/ 5

Vishay Semiconductors

Typical Characteristics (T

VCC=5 V

IF=10 mA

F=10 KHz,
DF=50%

iild1_01

Figure 1. Non-saturated Switching Schematic

I

F

RL=75 Ω

= 25 °C unless otherwise specified)

amb

V

O

Figure 3. Saturated Switching Schematic

V

iild1_02

t

t

O

PLH

t

D

t

t

R

Figure 2. Non-saturated Switching Timing

PHL

S

t

50%

F

Figure 4. Saturated Switching Timing

Document Number 83646

Rev. 1.3, 10-Jun-04

www.vishay.com

5

ILD1/ 2/ 5 / ILQ1/ 2/ 5

iild1_08

100101.1

0.0

0.5

1.0

1.5

I

F

- LED Current - mA

NCTR(SAT)

NCTR

Normalized to:
VCE=10V,IF=10mA
TA= 25°C

CTRce(sat) VCE= 0.4 V
TA= 70°C

CTR - Normalized CTR Factor

iild1_09

.1 1 10 100

1.5

1.0

0.5

0.0

IF- LED Current - mA

NCTR - Normalized CTR

NCTR(SAT)

NCTR

Normalized to:
VCE=10 V,IF= 10 mA, TA= 25°C
CTRce(sat) VCE= 0.4 V

TA= 85°C

iild1_10

60503020100

0

5

10

15

20

25

30

35

50°C

70°C

85°C

IF- LED Current - mA

I

CE

- Collector Current - mA

25°C

40

Vishay Semiconductors

1.4

iild1_05

1.3

1.2

1.1

1.0

0.9

- Forward Voltage - V
F

0.8

V

0.7
.1

TA= -55°C

TA= 25°C

TA=100°C

100101

IF- Forward Current - mA

VISHAY

Figure 5. Normalized Non-Saturated and Saturated CTR vs. LED

Current

1.5

Normalized to:
VCE=10V,IF=10mA
TA= 25°C

1.0

CTRce(sat) VCE= 0.4 V

NCTR

iild1_06

CTRNF - Normalized CTR Factor

0.5

0.0

NCTR(SAT)

100101.1

IF- LED Current - mA

Figure 6. Normalized Non-Saturated and Saturated CTR vs. LED

Current

1.5
Normalized to:

VCE=10V,IF= 10 mA, TA= 25°C

CTRce(sat) VCE= 0.4 V

1.0
TA= 50°C

NCTR

ˇ

Figure 8. Normalized Non-Saturated and Saturated CTR vs. LED

Current

Figure 9. Normalized Non-Saturated and Saturated CTR vs. LED

Current

0.5

CTRNF - Normalized CTR Factor

0.0

iild1_07

IF- LED Current - mA

Figure 7. Normalized Non-Saturated and Saturated CTR vs. LED

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6

NCTR(SAT)

Current

100101.1

Figure 10. Collector-Emitter Current vs. Temperature and LED

Current

Document Number 83646

Rev. 1.3, 10-Jun-04

VISHAY

iild1_12

RL- Collector Load Resistor - kΩ

100101.1

1

10

100

1000

1.0

1.5

2.0

2.5

tpLH

tpHL

t

pLH

- Propagation Low-High µs

t

pHL

- Propagation High-Low µs

Ta = 25°C, IF = 10 mA
Vcc=5V,Vth=1.5V

5

10

4

10

3

10

2

10

1

10

0

10

- Collector-Emitter - nA

-1

10

CEO

I

-2

10

iild1_11

ILD1/ 2/ 5 / ILQ1/ 2/ 5

Vishay Semiconductors

Vce=10V

Typical

100806040200-20

TA- Ambient Temperature - °C

Figure 11. Collector-Emitter Leakage Current vs.Temp.

Package Dimensions in Inches (mm)

pin one ID

i178006

.255 (6.48)
.268 (6.81)

.030 (0.76)
.045 (1.14)

4° typ.

.050 (1.27)

.018 (.46)
.022 (.56)

4

3

5

6

.379 (9.63)
.390 (9.91)

1

2

78

.031 (0.79)

.130 (3.30)
.150 (3.81)

.020 (.51 )
.035 (.89 )

.100 (2.54) typ.

Figure 12. Propagation Delay vs. Collector Load Resistor

ISO Method A

.300 (7.62)

typ.

.230(5.84)
.250(6.35)

3°–9°

10°

.110 (2.79)
.130 (3.30)

.008 (.20)
.012 (.30)

Document Number 83646

Rev. 1.3, 10-Jun-04

www.vishay.com

7

ILD1/ 2/ 5 / ILQ1/ 2/ 5

Vishay Semiconductors

Package Dimensions in Inches (mm)

87654321

910111213141516

.779 (19.77 )
.790 (20.07)

VISHAY

pin one ID

.255 (6.48)
.265 (6.81)

ISO Method A

4°

.018 (.46)
.022 (.56)

i178007

Option 6

.407 (10.36)

.391 (9.96)

.307 (7.8)
.291 (7.4)

.014 (0.35)

.010 (0.25)
.400 (10.16)
.430 (10.92)

.030 (.76)
.045 (1.14)

.100 (2.54)typ.

.028 (0.7)

MIN.

.031(.79)

Option 7

.300 (7.62)

TYP.

.315 (8.0)

MIN.

.331 (8.4)

MIN.

.406 (10.3)

MAX.

.130 (3.30)
.150 (3.81)

.020(.51)
.035 (.89)

.050 (1.27)

.180 (4.6)
.160 (4.1)

.300 (7.62)

3°–9°

.0040 (.102)
.0098 (.249)

typ.

10°
typ.

.008 (.20)
.012 (.30)

.110 (2.79)
.130 (3.30)

Option 9

.375 (9.53)

.395 (10.03)

.300 (7.62)

ref.

.020 (.51)

.040 (1.02)

.315 (8.00)

min.

.230 (5.84)
.250 (6.35)

.012 (.30) typ.

15° max.

18450

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8

Document Number 83646

Rev. 1.3, 10-Jun-04

VISHAY

ILD1/ 2/ 5 / ILQ1/ 2/ 5

Vishay Semiconductors

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).

The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively

2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.

Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.

We reserve the right to make changes to improve technical design

and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each

customer application by the customer. Should the buyer use Vishay Semiconductors products for any

unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all

claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal

damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Telephone: [phone], Fax number: 49 (0)7131 67 2423

Document Number 83646

Rev. 1.3, 10-Jun-04

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9

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