VISHAY ILD223T Datasheet

ILD223T
Dual Photodarlington
Small Outline Surface Mount Optocoupler
FEATURES
• Two Channel Optocoupler
• High Current Transfer Ratio at I
=1.0 mA,
F
500% Min.
• Isolation Test Voltage, 3000 V
RMS
• Electrical Specifications Similar to Standard 6-pin Coupler
• Compatible with Dual Wave, Vapor Phase and IR Reflow Soldering
• SOIC-8 Surface Mountable Package
• Standard Lead Spacing, .05"
• Available only on Tape and Reel Option (Con­forms to EIA Standard 481-2)
• Underwriters Lab File #E52744
DESCRIPTION
The ILD223T is a high current transfer ratio (CTR) optocoupler. It has a Gallium Arsenide infrared LED emitter and a silicon NPN photodarlington transis­tor detector.
This device has CTRs tested at an LED current of
1.0 mA. This low drive current permits easy inter-
facing from CMOS to LSTTL or TTL.
The ILD223T is constructed in a standard SOIC-8A foot print which makes it ideally suited for high den­sity applications. In addition to eliminating through­holes requirements, this package conforms to stan­dards for surface mounted devices.
Maximum Ratings (Each Channel) Emitter
Peak Reverse Voltage ..................................... 6.0 V
Peak Pulsed Current (1.0
µ
s, 300 pps) ........... 3.0 A
Continuous Forward Current per Channel ....30 mA
Power Dissipation at 25 ° C............................ 45 mW
Derate Linearly from 25 ° C ...................... 0.4 mW/ ° C
Detector
Collector-Emitter Breakdown Voltage............... 30 V
Emitter-Collector Breakdown Voltage.............. 5.0 V
Power Dissipation per Channel.................... 75 mW
Derate Linearly from 25 ° C ...................... 3.1 mW/ ° C
Package
Total Package Dissipation at 25 ° C Ambient
(2 LEDs + 2 Detectors, 2 Channels)....... 240 mW
Derate Linearly from 25 ° C ...................... 2.0 mW/ ° C
Storage Temperature ................... –55 ° C to +150 ° C
Operating Temperature ................ –55 ° C to +100 ° C
Soldering Time at 260 ° C ...............................10 sec
Dimensions in inches (mm)
Pin 1
.120±.002 (3.05±.05)
.240 (6.10)
.230±.002 (5.84±.05)
.004 (.10) .008 (.20)
.050 (1.27) typ.
.040 (1.02)
.
Table 1. Characteristics T
=25 ° C
A
.154±
C
L
(3.91±.05)
.016 (.41)
.002
.015±.002
.020±.004 (.5±.10) 2 plcs.
Anode 1
Cathode 2
Anode 3
Cathode 4
(.38±.05)
.008 (.20)
40°
° max.
5
R.010 (.25) max.
8 Collector
7 Emitter
6 Collector
5 Emitter
7°
.058 (1.49)
.125 (3.18)
Lead Coplanarity ±.001 (.04) max.
Parameter Symbol Min. Typ. Max. Unit Condition
Emitter
Forward Voltage V
Reverse Current
Capacitance
F
I
R
C
O
1.3 V
0.1 100 µ A V
—25— pF V
I
=1.0 mA
F
=6.0 V
R
=0 V
F
F=1.0 MHz
Detector
Breakdown Voltage
Current, Collector-Emitter
Capacitance, Collector-Emitter
BV
BV
I
CEO
C
CE
CEO
ECO
30 V
5.0
50 nA V
3.4 pF V
I
=10 µ A
C
I
=10 µ A
E
CE
I
=0
F
CE
=5.0 V
=5.0 V
Package
DC Current Transfer Ratio
Saturation Voltage, Collector-Emitter
Capacitance, Input to Output
Resistance, Input to Output
Turn-On Time
Turn-Off Time
Isolation Test Voltage
CTR
V
CE
C
IO
R
IO
t
ON
t
OFF
V
IO
500 %
DC
1.0 V
sat
0.5 pF
100 G Ω ——
15 — µ s— V
30 — µ s—
3000 — V
RMS
I
=1.0 mA,
F
V
=5.0 V
CE
I
=1.0 mA,
F
=0.5 mA
I
CE
=10 V
CC
R
=100 Ω
L
I
=5.0 mA
F
t=1.0 sec.
Document Number: 83648 www.vishay.com Revision 17-August-01
2–183
Figure 1. Forward voltage versus forward current
1.4
1.3
1.2
1.1
1.0
0.9
- Forward Voltage - V
F
V
0.8
0.7 .1 1 10 100
TA = -55°C
TA = 25°C
TA = 100°C
IF - Forward Current - mA
Figure 2. Peak LED current versus duty factor, Tau
10000
1000
100
Duty Factor
.005
.01 .02
.05
.1 .2
.5
τ
t
τ
DF = /t
Figure 4. CTR versus LED current
Figure 5. Collector current versus LED current
If(pk) - Peak LED Current - mA
10
10-610-510-410-310-210-110010
t - LED Pulse Duration - s
Figure 3. Normalized CTR
versus LED current
CE
1
Figure 6. Switching schematic and switching timing
VCC=10 V
F=10 KHz, DF=50%
IF=10 mA
I
F
V
O
R
L
V
O
t
D
t
R
t
PLH
VTH=1.5 V
t
PHL
t
t
S
F
Document Number: 83648 www.vishay.com Revision 17-August-01
2–184
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