VISHAY ILD 213T Datasheet

ILD205T/206T/207T/211T/213T/217T

Vishay Semiconductors

Optocoupler, Phototransistor Output, Dual Channel,

SOIC-8 package

FEATURES

• Two Channel Coupler

• SOIC-8 Surface Mountable Package

• Standard Lead Spacing of 0.05"

• Available only on Tape and Reel Option
(Conforms to EIA Standard 481-2)

• Isolation Test Voltage, 4000 V

RMS

• Compatible with Dual Wave, Vapor Phase and IR
Reflow Soldering

• Lead (Pb)-free component

• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC

i179018

A1

C2

A3

C4

8 C

7E

6C

5E

DESCRIPTION

The ILD205T/206T/207T/211T/213T/217T are
optically coupled pairs with a Gallium Arsenide infrared
LED and a silicon NPN phototransistor. Signal
information, including a DC level, can be transmitted
by the device while maintaining a high degree of

AGENCY APPROVALS

• UL1577, File No. E52744 System Code Y

• CUL - File No. E52744, equivalent to CSA
bulletin 5A

• DIN EN 60747-5-2 (VDE0884)
Available with Option 1

electrical isolation between input and output. The
ILD205T/206T/207T/211T/213T/217T come in a
standard SOIC-8 small outline package for surface
mounting which makes it ideally suited for high density
applications with limited space. In addition to
eliminating through-holes requirements, this package
conforms to standards for surface mounted devices.

A specified minimum and maximum CTR allows a
narrow tolerance in the electrical design of the
adjacent circuits. The high BV

of 70 V gives a

CEO

higher safety margin compared to the industry
standard of 30 V.

ORDER INFORMATION

PART REMARKS

ILD205T CTR 40 - 80 %, SOIC-8

ILD206T CTR 63 - 125 %, SOIC-8

ILD207T CTR 100 - 200 %, SOIC-8

ILD211T CTR > 20 %, SOIC-8

ILD213T CTR > 100 %, SOIC-8

ILD217T CTR > 100 %, SOIC-8

Note:
For additional information on the available options refer to Option Information.

Document Number 83647
Rev. 1.6, 20-Apr-07

For technical support, please contact: [e-mail]

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ILD205T/206T/207T/211T/213T/217T

Vishay Semiconductors

ABSOLUTE MAXIMUM RATINGS

1)

PARAMETER TEST CONDITION SYMBOL VAL UE UNIT

INPUT

Peak reverse voltage

V

R

6.0 V

Peak pulsed current 1.0 µs, 300 pps 1.0 A

Continuous forward current per
channel

Power dissipation

P

diss

30 mA

50 mW

Derate linearly from 25 °C 0.66 mW/°C

OUTPUT

Collector-emitter breakdown
voltage

Emitter-collector breakdown
voltage

Power dissipation per channel

BV

BV

CEO

ECO

P

diss

70 V

7.0 V

125 mW

Derate linearly from 25 °C 1.67 mW/°C

COUPLER

Isolation test voltage t = 1.0 s

V

ISO

4000

V

RMS

Total package dissipation
ambient (2 LEDs + 2 detectors,

P

tot

300 mW

2 channels)

Derate linearly from 25 °C 4.0 mW/°C

Storage temperature

Operating temperature

Soldering time from 260 °C

Note:

1)

T

= 25 °C, unless otherwise specified.

amb

Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not

T

stg

T

amb

T

sld

- 55 to + 150 °C

- 55 to + 100 °C

10 sec.

implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum
Rating for extended periods of the time can adversely affect reliability.

ELECTRICAL CHARACTERISTICS

1)

PARAMETER TEST CONDITION PART SYMBOL MIN TYP. MAX UNIT

INPUT

= 10 mA V

Forward voltage

Reverse current

Capacitance

I

F

= 6.0 V I

V

R

= 0 C

V

R

F

R

O

1.2 1.55 V

0.1 100 µA

25 pF

OUTPUT

Collector-emitter breakdown voltage

Emitter-collector breakdown voltage

Collector-emitter leakage current

Collector-emitter capacitance

I

C

= 10 µA BV

I

E

= 10 V, IF = 0 I

V

CE

= 0 C

V

CE

CEO

ECO

CEO

CE

70 V

7.0 V

5.0 50 nA

10 pF

= 10 µA BV

COUPLER

Collector-emitter saturation voltage

Capacitance (input-output)

Resistance, input to output

Note:

1)

T

= 25 °C, unless otherwise specified.

amb

I

F

CE(sat)

C

IO

R

IO

0.4 V

0.5 pF

100 GΩ

= 10 mA, IC = 2.5 mA V

Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.

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Document Number 83647

Rev. 1.6, 20-Apr-07

ILD205T/206T/207T/211T/213T/217T

Vishay Semiconductors

CURRENT TRANSFER RATIO

PARAMETER TEST CONDITION PART SYMBOL MIN. TYPE MAX UNIT

ILD205T

ILD206T

= 5.0 V, IF = 10 mA

V

CE

ILD207T

ILD211T

DC Current Transfer
Ratio

ILD213T

ILD205T

V

= 5.0 V, IF = 1.0 mA

CE

ILD206T

ILD207T

ILD217T

SWITCHING CHARACTERISTICS

PARAMETER TEST CONDITION PA RT SYMBOL MIN. TYPE MAX UNIT

= 2.0 mA, RL = 100 Ω,

I

Turn-on time

Turn-off time

C

= 2.0 mA, RL = 100 Ω,

I

C

V

V

= 5.0 V

CC

= 5.0 V

CC

CTR

CTR

CTR

CTR

CTR

CTR

CTR

CTR

CTR

t

t

DC

DC

DC

DC

DC

DC

DC

DC

DC

on

off

40 80 %

63 125 %

100 200 %

20 %

100 %

13 30 %

22 45 %

34 70 %

100 120 %

5.0 µs

4.0 µs

SAFETY AND INSULATION RATINGS1)

PARAMETER TEST CONDITION SYMBOL MIN TYP. MAX UNIT

Climatic classification (according to IEC 68 part 1) 55/100/21

Comparative tracking index CTI 175 399

V

IOTM

V

IORM

P

SO

I

SI

T

SI

Creepage 4mm

Clearance 4mm

Insulation thickness, reinforced rated per IEC60950 2.10.5.1 0.2 mm

Note:

1)

As per IEC60747-5-2, §7.4.3.8.1, this optocoupler is suitable for “safe electrical insulation” only within the safety ratings. Compliance with the

safety ratings shall be ensured by means of protective circuits.

6000 V

560 V

350 mW

150 mA

165 °C

Document Number 83647
Rev. 1.6, 20-Apr-07

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ILD205T/206T/207T/211T/213T/217T

Vishay Semiconductors

TYPICAL CHARACTERISTICS

T

= 25 °C, unless otherwise specified

amb

30

25

20

15

10

- LED Current (mA)

f

I

5

0

0.6 1.00.8 1.2 1.4

iild205t_01

85 °C

60 °C

25 °C

Vf - LED Forward Voltage (V)

Figure 1. Forward Current vs. Forward Voltage

1.2
Coll Current Normalized at I = 10 mA

VCE= 10 V

1.0

F

IF= 10 mA

0.8

0.6

I

F

= 5 mA

0.4

0.2

NIc Normalized Collector Current

0.0

061012

42

= 1 mA

I

F

8

VCE- Collector To Emitter Voltage (V)

iild205t_02

Figure 2. Collector-Emitter Current vs. Temperature

1.2

1.0

0.8

0.6

IF= 10 mA

IF= 5 mA

CTR nonsat normalized at

I

= 10 mA

F

= 10 V

V

CE

0.4

0.2
I

NCTRce - normalized CTRce

= 1 mA

F

0.0

20 40 60 80100

- Temperature (°C)

T

iild205t_04

A

Figure 4. Current Transfer Ratio (normalized) vs.

Ambient Temperature

3

10

IF= 10 mA
Pulse Width = 100 ms
Duty Cycle = 50 %

2

10

1

10

t

off

t

on

Switching Speed (µs)

0

10

0.1 1 10 100

RI - Load Resistor (KΩ)

iild205t_01

Figure 5. Switching Speed vs. Load Resistor

1.2

1.0

0.8

0.6

0.4

0.2

NCTRce - Normalized CTRce

0.0

0.01 0.1 1 10 100

iild205t_03

Figure 3. Normalized CTR

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CTR normalized at

= 10 mA

I

F

I

- LED Current (mA)

F

1

VCE= 5 V

VCE= 0.4 V

vs. Forward Current

ce

Figure 6. Collector Current vs. Ambient Temperature

0.1

0.01

Iceo-Leakage Current - (µA)

0.001

iild205t_06

20 60 1008040

Ta - Temperature (°C)

For technical support, please contact: [e-mail]

VCE = 50 V

VCE = 50 V

Document Number 83647

Rev. 1.6, 20-Apr-07

ILD205T/206T/207T/211T/213T/217T

Vishay Semiconductors

200

150

100

Package Power Dissipation (mw)

iild205t_07

50

0

Total pkg

per channel

25 50 75 100 125

TA- Ambient Temperature (°C)

Figure 7. Power Dissipation vs. Ambient Temperature

VCC= 5 V

Input

R

V

L

OUT

Input

t

pdon

Output

10 %

50 %

90 %

pdoff

t

off

t

t

s

r

10 %

50 %

90 %

t

on

t

t

r

d

t

iild205t_08

Figure 8. Switching Test Circuit

PACKAGE DIMENSIONS in inches (millimeters)

0.120 ± 0.002
(3.05 ± 0.05)

0.154 ± 0.002

C

L

(3.91 ± 0.05)

0.016 (0.41)

ISO Method A

i178020

0.240
(6.10)

Pin One I.D.

0.230 ± 0.002
(5.84 ± 0.05)

0.004 (0.10)

0.008 (0.20)

0.050 (1.27) Typ.

0.040 (1.02)

0.050 (1.27)

0.015 ± 0.002
(0.38 ± 0.05)

0.008 (0.20)

0.020 ± 0.004
(0.51 ± 0.10)

2 Plcs.

R 0.010 (0.13)

0.170 (4.32)

0.260 (6.6)

40°

5° Max.

R0.010

(0.25) Max.

0.014 (0.36)

0.036 (0.91)

0.045 (1.14)

7°

0.0585 ± 0.002
(1.49 ± 0.05)

0.125 ± 0.002
(3.18 ± 0.05)

Lead coplanarity
± 0.001 Max.

Document Number 83647
Rev. 1.6, 20-Apr-07

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5

ILD205T/206T/207T/211T/213T/217T

Vishay Semiconductors

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).

The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively

2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.

Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.

We reserve the right to make changes to improve technical design

and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each customer

application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or

unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and

expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such

unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

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Document Number 83647

Rev. 1.6, 20-Apr-07

Legal Disclaimer Notice

Vishay

Notice

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.

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