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VISHAY
i179018
A1
C2
A3
C4
8C
7E
6C
5E
ILD205T/ 206T/ 207T/ 211T/ 213T/ 217T
Vishay Semiconductors
Optocoupler, Phototransistor Output, Dual Channel, SOIC-8
package
Features
• Two Channel Coupler
• SOIC-8A Surface Mountable Package
• Standard Lead Spacing of .05 "
• Available only on Tape and Reel Option (Conforms to EIA Standard 481-2)
• Isolation Test Voltage, 3000 V
• Compatible with Dual Wave, Vapor Phase and IR
Reflow Soldering
RMS
Agency Approvals
• UL - File No. E52744 System Code Y
Description
A specified minimum and maximum CTR allows a
narrow tolerance in the electrical design of the adjacent circuits. The high BV
of 70 V gives a higher
CEO
safety margin compared to the industry standard of
30 V.
The ILD205T/ 206T/ 207T/ 211T/ 213T/ 217T are
optically coupled pairs with a Gallium Arsenide infrared LED and a silicon NPN phototransistor. Signal
information, including a DC level, can be transmitted
by the device while maintaining a high degree of electrical isolation between input and output. The
ILD205T/ 206T/ 207T/ 211T/ 213T/ 217T come in a
standard SOIC-8A small outline package for surface
mounting which makes it ideally suited for high density applications with limited space. In addition to eliminating through-holes requirements, this package
conforms to standards for surface mounted devices.
Order Information
Part Remarks
ILD205T CTR 40 - 80 %, SOIC-8
ILD206T CTR 63 - 125 %, SOIC-8
ILD207T CTR 100 - 200 %, SOIC-8
ILD211T CTR > 20 %, SOIC-8
ILD213T CTR > 100 %, SOIC-8
ILD217T CTR > 100 %, SOIC-8
For additional information on the available options refer to
Option Information.
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter Test condition Symbol Value Unit
Peak reverse voltage V
Peak pulsed current 1.0 µs, 300 pps 1.0 A
Continuous forward current per
channel
Power dissipation P
Derate linearly from 25 °C 0.66 mW/°C
Document Number 83647
Rev. 1.3, 19-Apr-04
R
diss
6.0 V
30 mA
50 mW
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1
Page 2
ILD205T/ 206T/ 207T/ 211T/ 213T/ 217T
VISHAY
Vishay Semiconductors
Output
Parameter Test condition Symbol Val ue Unit
Collector-emitter breakdown voltage BV
Emitter-collector breakdown voltage BV
Power dissipation per channel P
Derate linearly from 25 °C 1.67 mW/°C
CEO
ECO
diss
70 V
7.0 V
125 mW
Coupler
Parameter Test condition Symbol Val ue Unit
Total package dissipation
ambient (2 LEDs + 2 detectors,
2 channels)
Derate linearly from 25 °C 4.0 mW/°C
Storage temperature T
Operating temperature T
Soldering time from 260 °C T
P
amb
tot
stg
sld
300 mW
- 55 to + 150 °C
- 55 to + 100 °C
10 sec.
Electrical Characteristics
T
= 25 °C, unless otherwise specified
amb
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter Test condition Symbol Min Ty p. Max Unit
Forward voltage I
Reverse current V
Capacitance V
= 10 mA V
F
= 6.0 V I
R
= 0 C
R
Output
Parameter Test condition Symbol Min Ty p. Max Unit
Collector-emitter breakdown
voltage
Emitter-collector breakdown
voltage
Collector-emitter leakage
current
Collector-emitter capacitance V
I
= 10 µABV
C
I
= 10 µABV
E
= 10 V, IF = 0 I
V
CE
= 0 C
CE
Coupler
Parameter Test condition Symbol Min Ty p. Max Unit
Collector-emitter saturation
voltage
Capacitance (input-output) C
Isolation test voltage t = 1.0 sec. V
Resistance, input to output R
= 10 mA, IC = 2.5 mA V
I
F
F
R
O
CEO
ECO
CEO
CE
CE(sat)
IO
ISO
IO
1.2 1.55 V
0.1 100 µA
25 pF
70 V
7.0 V
5.0 50 nA
10 pF
0.4 V
0.5 pF
3000 V
100 GΩ
RMS
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2
Document Number 83647
Rev. 1.3, 19-Apr-04
Page 3
VISHAY
iild205t_02
0246 81012
1.2
1.0
0.8
0.6
0.4
0.2
0.0
VCE-Collector to Emitter Voltage (V)
NIc Normalized Collector Current
IF=10 mA
I
F
=5 mA
IF=1 mA
Coll current normalized @ IF=10 mA
V
CE
=10 V
ILD205T/ 206T/ 207T/ 211T/ 213T/ 217T
Current Transfer Ratio
Parameter Test condition Par t Symbol Min Ty p. Max Unit
DC Current Transfer Ratio V
= 5.0 V, IF = 10 mA ILD205T CTR
CE
= 5.0 V, IF = 1.0 mA ILD205T CTR
V
CE
Switching Characteristics
Parameter Test condition Symbol Min Ty p. Max Unit
Turn-on time I
Turn-off time I
= 2.0 mA, RL = 100 Ω,
C
V
= 5.0 V
CC
= 2.0 mA, RL = 100 Ω,
C
V
= 5.0 V
CC
ILD206T CTR
ILD207T CTR
ILD211T CTR
ILD213T CTR
ILD206T CTR
ILD207T CTR
ILD217T CTR
t
on
t
off
Vishay Semiconductors
DC
DC
DC
DC
DC
DC
DC
DC
DC
40 80 %
63 125 %
100 200 %
20 %
100 %
13 30 %
22 45 %
34 70 %
100 120 %
5.0 µs
4.0 µs
Typical Characteristics (T
If - LED Current (ma)
iild205t_01
Vf - LED Forward Voltage (V)
amb
Fig. 1 Forward Current vs. Forward Voltage
= 25 °C unless otherwise specified)
Fig. 2 Collector-Emitter Current vs. Temperature
Document Number 83647
Rev. 1.3, 19-Apr-04
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ILD205T/ 206T/ 207T/ 211T/ 213T/ 217T
Ta - Temperature (°C)
Iceo-Leakage Current - (µa)
iild205t_06
Vce=50 V
Vce=50 V
iild205t_07
200
150
100
50
0
TA- Ambient Temperature (°C)
Package Power Dissipation (mw)
25 50 75 100 125
Total pkg
per channel
Vishay Semiconductors
1.2
CTR normalized @
1.0
IF=10mA
0.8
0.6
VCE=5 V
VISHAY
0.4
0.2
NCTRce - Normalized CTRce
0.0
.01 .1 1 10 100
IF- LED Current - (mA)
iild205t_03
VCE=0.4 V
Fig. 3 Normalized CTRce vs. Forward Current
1.2
1.0
IF=10 mA
0.8
0.6
IF=5 mA
0.4
0.2
NCTRce - normalized CTRce
iild205t_04
IF=1 mA
0.0
20 40 60 80 100
CTR nonsat normalized @
TA- Temperature (°C)
I
=10 mA
F
V
CE
=10 V
Fig. 6 Collector Current vs. Ambient Temperature
Fig. 4 Current Transfer Ratio (normalized) vs. Ambient
Temperature
3
10
IF=10 mA
Pulse width=100 ms
Duty cycle=50%
2
10
1
10
Switching speed (µs)
0
10
.1 1 10 100
Rl - Load Resistor (KΩ)ˇ
iild205t_01
To f f
To n
Fig. 5 Switching Speed vs. Load Resistor
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4
Fig. 7 Power Dissipation vs. Ambient Temperature
Document Number 83647
Rev. 1.3, 19-Apr-04
Page 5
VISHAY
ILD205T/ 206T/ 207T/ 211T/ 213T/ 217T
Vishay Semiconductors
Input
t
VCC=5 V
Input
iild205t_08
Fig. 8 Switching Time Test Schematic and Waveform
R
V
L
OUT
t
pdon
Output
10%
50%
90%
on
t
t
r
d
Package Dimensions in Inches (mm)
.120±.002
(3.05±.05)
.240
(6.10)
ISO Method A
Pin One I.D.
.230±.002
(5.84±.05)
.154±.002
C
L
(3.91±.05)
.016 (.41)
t
pdoff
.050 (1.27)
.015±.002
(.38±.05)
t
s
t
off
t
r
R .010 (.13)
.170 (4.32)
.260 (6.6)
40°
10%
50%
90%
.014 (.36)
.036 (.91)
.045 (1.14)
7°
.0585±.002
(1.49±.05)
.004 (.10)
.008 (.20)
.040 (1.02)
i178020
Document Number 83647
Rev. 1.3, 19-Apr-04
.050(1.27) Typ.
.008 (.20)
.020±.004
(.51±.10)
2 Plcs.
5° Max.
R.010
(.25) Max.
.125±.002
(3.18±.05)
Lead coplanarity
±.001 Max.
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5
Page 6
ILD205T/ 206T/ 207T/ 211T/ 213T/ 217T
VISHAY
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
www.vishay.com
6
Document Number 83647
Rev. 1.3, 19-Apr-04
Page 7
This datasheet has been download from:
www.datasheetcatalog.com
Datasheets for electronics components.
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