IL74/ ILD74/ ILQ74
i179015
1
2
3
6
5
4
B
C
E
A
C
NC
1
2
3
4
8
7
6
5
E
C
C
E
A
C
C
A
A
C
C
A
A
C
C
A
E
C
C
E
E
C
C
E
16
15
14
13
12
11
10
9
1
2
3
4
5
6
7
8
Single Channel
Dual Channel
Quad Channel
Vishay Semiconductors
Optocoupler, Phototransistor Output (Single, Dual, Quad
Channel)
Features
• IL74/ ILD74/ ILQ74 TTL Compatible
• Transfer Ratio, 35 % Typical
• Coupling Capacitance, 0.5 pF
• Single, Dual, & Quad Channel
• Industry Standard DIP Package
• Lead-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Agency Approvals
• UL1577, File No. E52744 System Code H or J,
Double Protection
• CSA 93751
• BSI IEC60950 IEC60065
• DIN EN 60747-5-2 (VDE0884)
DIN EN 60747-5-5 pending
Available with Option 1, X001 Suffix
• FIMKO
Description
The IL74/ ILD74/ ILQ74 is an optically coupled pair
with a GaAIAs infrared LED and a silicon NPN phototransistor. Signal information, including a DC level,
can be transmitted by the device while maintaining a
high degree of electrical isolation between input and
output.The IL74/ ILD74/ ILQ74 is especially for driving
medium-speed logic, where it may be used to eliminate troublesome ground loop and noise problems.
Also it can be used to replace relays and transformers
in many digital interface applications, as well as analog applications such as CTR modulation.
The ILD74 has two isolated channels in a single DIP
package; the ILQ74 has four isolated channels per
package.
Document Number 83640
Rev. 1.4, 26-Oct-04
e3
Order Information
Part Remarks
IL74 CTR
ILD74 CTR
ILQ74 CTR
IL74-X006 CTR
ILD74-X006 CTR
ILD74-X007 CTR
ILD74-X009 CTR
ILQ74-X009 CTR
For additional information on the available options refer to
Option Information.
35 %, Single Channel DIP-6
DC
35 %, Dual Channel DIP-8
DC
35 %, Quad Channel DIP-16
DC
35 %, Single Channel DIP-6 400 mil
DC
(option 6)
35 %, Dual Channel DIP-8 400 mil
DC
(option 6)
35 %, Dual Channel SMD-8 (option 7)
DC
35 %, Dual Channel SMD-8 (option 9)
DC
35 %, Quad Channel SMD-16 (option 9)
DC
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Pb
Pb-free
1
IL74/ ILD74/ ILQ74
Vishay Semiconductors
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
(each channel)
Parameter Test condition Symbol Val ue Unit
Peak reverse voltage V
Forward continuous current I
Power dissipation P
R
F
diss
Derate linearly from 55 % 1.33 mW/°C
Output
Para meter Test condition Symbol Valu e Unit
Collector-emitter breakdown voltage BV
Emitter-collector breakdown voltage BV
Collector-base breakdown voltage BV
Power dissipation P
Derate linearly from 25 °C 2.0 mW/°C
CEO
ECO
CBO
diss
3.0 V
60 mA
100 mW
20 V
5.0 V
70 V
150 mW
Coupler
Parameter Test condition Par t Symbol Va lue Unit
Isolation test voltage t = 1.0 sec. V
Isolation resistance VIO = 500 V, TA = 25 °C R
V
= 500 V, TA = 100 °C R
IO
Total package dissipation IL74 P
ILD74 P
ILQ74 P
ISO
IO
IO
tot
tot
tot
Derate linearly from 25 °C IL74 2.7 mW/°C
ILD74 5.33 mW/°C
ILQ74 6.67 mW/°C
Creepage ≥ 7.0 mm
Clearance ≥ 7.0 mm
Storage temperature T
Operating temperature T
stg
amb
Lead soldering time at 260 °C 10 sec.
5300 V
12
≥ 10
11
≥ 10
RMS
200 mW
400 mW
500 mW
- 55 to + 150 °C
- 55 to + 100 °C
Ω
Ω
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2
Document Number 83640
Rev. 1.4, 26-Oct-04
IL74/ ILD74/ ILQ74
Vishay Semiconductors
Electrical Characteristics
T
= 25 °C, unless otherwise specified
amb
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter Test condition Symbol Min Ty p. Max Unit
Forward voltage I
Reverse current V
Capacitance V
Output
Parameter Test condition Symbol Min Ty p. Max Unit
Collector-emitter breakdown
voltage
Collector-emitter leakage
current
Collector-emitter capacitance V
= 20 mA V
F
= 3.0 V I
R
= 0 V C
R
= 1.0 mA BV
I
C
= 5.0 V, IF = 0 I
V
CE
= 0, f = 1.0 MHz C
CE
R
CEO
CEO
CE
F
O
20 50 V
1.3 1.5 V
0.1 100 µA
25 pF
5.0 500 nA
10.0 pF
Coupler
Parameter Test condition Symbol Min Ty p. Max Unit
Saturation voltage collectoremitter
Resistance, input to output R
Capacitance (input-output) C
= 2.0 mA, IF = 16 mA V
I
C
Current Transfer Ratio
Parameter Test condition Symbol Min Ty p. Max Unit
DC Current Transfer Ratio I
= 16 mA, VCE = 5.0 V CTR
F
CEsat
IO
IO
DC
0.3 0.5 V
100 GΩ
0.5 pF
12.5 35 %
Document Number 83640
Rev. 1.4, 26-Oct-04
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3